KR101165875B1 - 다결정규소 제거 조절 방법 - Google Patents

다결정규소 제거 조절 방법 Download PDF

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Publication number
KR101165875B1
KR101165875B1 KR1020087008090A KR20087008090A KR101165875B1 KR 101165875 B1 KR101165875 B1 KR 101165875B1 KR 1020087008090 A KR1020087008090 A KR 1020087008090A KR 20087008090 A KR20087008090 A KR 20087008090A KR 101165875 B1 KR101165875 B1 KR 101165875B1
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KR
South Korea
Prior art keywords
polishing
silicon
abrasive
copolymer
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087008090A
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English (en)
Korean (ko)
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KR20080064823A (ko
Inventor
제프리 디살드
티모시 존스
폴 피니
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20080064823A publication Critical patent/KR20080064823A/ko
Application granted granted Critical
Publication of KR101165875B1 publication Critical patent/KR101165875B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087008090A 2005-10-04 2006-09-29 다결정규소 제거 조절 방법 Expired - Fee Related KR101165875B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/243,140 US20070077865A1 (en) 2005-10-04 2005-10-04 Method for controlling polysilicon removal
US11/243,140 2005-10-04
PCT/US2006/037831 WO2007041203A1 (en) 2005-10-04 2006-09-29 Method for controlling polysilicon removal

Publications (2)

Publication Number Publication Date
KR20080064823A KR20080064823A (ko) 2008-07-09
KR101165875B1 true KR101165875B1 (ko) 2012-07-13

Family

ID=37499658

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087008090A Expired - Fee Related KR101165875B1 (ko) 2005-10-04 2006-09-29 다결정규소 제거 조절 방법

Country Status (6)

Country Link
US (1) US20070077865A1 (enExample)
JP (1) JP5689581B2 (enExample)
KR (1) KR101165875B1 (enExample)
CN (1) CN101322227B (enExample)
TW (1) TWI316272B (enExample)
WO (1) WO2007041203A1 (enExample)

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Also Published As

Publication number Publication date
CN101322227B (zh) 2010-12-01
JP5689581B2 (ja) 2015-03-25
CN101322227A (zh) 2008-12-10
TWI316272B (en) 2009-10-21
KR20080064823A (ko) 2008-07-09
WO2007041203A1 (en) 2007-04-12
US20070077865A1 (en) 2007-04-05
JP2009510797A (ja) 2009-03-12
TW200731383A (en) 2007-08-16

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