CN101322227B - 控制多晶硅移除的方法 - Google Patents

控制多晶硅移除的方法 Download PDF

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Publication number
CN101322227B
CN101322227B CN2006800449616A CN200680044961A CN101322227B CN 101322227 B CN101322227 B CN 101322227B CN 2006800449616 A CN2006800449616 A CN 2006800449616A CN 200680044961 A CN200680044961 A CN 200680044961A CN 101322227 B CN101322227 B CN 101322227B
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CN
China
Prior art keywords
polishing
copolymer
polysilicon
carrier
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800449616A
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English (en)
Chinese (zh)
Other versions
CN101322227A (zh
Inventor
杰弗里·戴萨德
蒂莫西·约翰斯
保罗·菲尼
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Cabot Corp
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Cabot Corp
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Publication date
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Publication of CN101322227A publication Critical patent/CN101322227A/zh
Application granted granted Critical
Publication of CN101322227B publication Critical patent/CN101322227B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2006800449616A 2005-10-04 2006-09-29 控制多晶硅移除的方法 Expired - Fee Related CN101322227B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/243,140 US20070077865A1 (en) 2005-10-04 2005-10-04 Method for controlling polysilicon removal
US11/243,140 2005-10-04
PCT/US2006/037831 WO2007041203A1 (en) 2005-10-04 2006-09-29 Method for controlling polysilicon removal

Publications (2)

Publication Number Publication Date
CN101322227A CN101322227A (zh) 2008-12-10
CN101322227B true CN101322227B (zh) 2010-12-01

Family

ID=37499658

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800449616A Expired - Fee Related CN101322227B (zh) 2005-10-04 2006-09-29 控制多晶硅移除的方法

Country Status (6)

Country Link
US (1) US20070077865A1 (enExample)
JP (1) JP5689581B2 (enExample)
KR (1) KR101165875B1 (enExample)
CN (1) CN101322227B (enExample)
TW (1) TWI316272B (enExample)
WO (1) WO2007041203A1 (enExample)

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Also Published As

Publication number Publication date
JP5689581B2 (ja) 2015-03-25
KR101165875B1 (ko) 2012-07-13
CN101322227A (zh) 2008-12-10
TWI316272B (en) 2009-10-21
KR20080064823A (ko) 2008-07-09
WO2007041203A1 (en) 2007-04-12
US20070077865A1 (en) 2007-04-05
JP2009510797A (ja) 2009-03-12
TW200731383A (en) 2007-08-16

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