CN113242891B - 抛光料浆组合物 - Google Patents
抛光料浆组合物 Download PDFInfo
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- CN113242891B CN113242891B CN201980084413.3A CN201980084413A CN113242891B CN 113242891 B CN113242891 B CN 113242891B CN 201980084413 A CN201980084413 A CN 201980084413A CN 113242891 B CN113242891 B CN 113242891B
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- polishing
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- polishing slurry
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- 238000005498 polishing Methods 0.000 title claims abstract description 210
- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 239000002002 slurry Substances 0.000 title claims abstract description 87
- 239000002245 particle Substances 0.000 claims abstract description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229920000642 polymer Polymers 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- 229920005591 polysilicon Polymers 0.000 claims abstract description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 239000000654 additive Substances 0.000 claims abstract description 15
- 230000000996 additive effect Effects 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 229920001577 copolymer Polymers 0.000 claims description 51
- -1 nicotinic diacid Chemical compound 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 28
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 25
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 18
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 14
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 14
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 14
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 229920002678 cellulose Polymers 0.000 claims description 11
- 239000001913 cellulose Substances 0.000 claims description 11
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 229920001897 terpolymer Polymers 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 9
- DGMPVYSXXIOGJY-UHFFFAOYSA-N Fusaric acid Chemical compound CCCCC1=CC=C(C(O)=O)N=C1 DGMPVYSXXIOGJY-UHFFFAOYSA-N 0.000 claims description 8
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 8
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 8
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229920006317 cationic polymer Polymers 0.000 claims description 6
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 claims description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- 239000007791 liquid phase Substances 0.000 claims description 6
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920001451 polypropylene glycol Polymers 0.000 claims description 6
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 claims description 5
- RUACIFFMSHZUKZ-UHFFFAOYSA-O 3-Acrylamidopropyl trimethylammonium Chemical compound C[N+](C)(C)CCCNC(=O)C=C RUACIFFMSHZUKZ-UHFFFAOYSA-O 0.000 claims description 5
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 5
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 claims description 5
- 229960002510 mandelic acid Drugs 0.000 claims description 5
- 239000003607 modifier Substances 0.000 claims description 5
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 claims description 5
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 claims description 5
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 4
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 claims description 4
- MXRGSJAOLKBZLU-UHFFFAOYSA-N 3-ethenylazepan-2-one Chemical compound C=CC1CCCCNC1=O MXRGSJAOLKBZLU-UHFFFAOYSA-N 0.000 claims description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 4
- 239000005977 Ethylene Substances 0.000 claims description 4
- 229920000691 Poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea] Polymers 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 4
- 125000006353 oxyethylene group Chemical group 0.000 claims description 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000011164 primary particle Substances 0.000 claims description 4
- QWMYWGHYRCRBFI-UHFFFAOYSA-M prop-2-enamide;trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].NC(=O)C=C.CC(=C)C(=O)OCC[N+](C)(C)C QWMYWGHYRCRBFI-UHFFFAOYSA-M 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011163 secondary particle Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- RRHXZLALVWBDKH-UHFFFAOYSA-M trimethyl-[2-(2-methylprop-2-enoyloxy)ethyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)OCC[N+](C)(C)C RRHXZLALVWBDKH-UHFFFAOYSA-M 0.000 claims description 4
- KUEDAAUECWBMLW-AATRIKPKSA-N (e)-n,n,n',n'-tetramethylbut-2-ene-1,4-diamine Chemical compound CN(C)C\C=C\CN(C)C KUEDAAUECWBMLW-AATRIKPKSA-N 0.000 claims description 3
- XSZHWSXSZPZINJ-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylbut-2-enoate Chemical compound CC=C(C)C(=O)OCCN(C)C XSZHWSXSZPZINJ-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 125000005907 alkyl ester group Chemical group 0.000 claims description 3
- 150000005215 alkyl ethers Chemical class 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 claims description 3
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 3
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000194 fatty acid Substances 0.000 claims description 3
- 229930195729 fatty acid Natural products 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- FQDIANVAWVHZIR-OWOJBTEDSA-N trans-1,4-Dichlorobutene Chemical compound ClC\C=C\CCl FQDIANVAWVHZIR-OWOJBTEDSA-N 0.000 claims description 3
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229940081066 picolinic acid Drugs 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- UZNHKBFIBYXPDV-UHFFFAOYSA-N trimethyl-[3-(2-methylprop-2-enoylamino)propyl]azanium;chloride Chemical compound [Cl-].CC(=C)C(=O)NCCC[N+](C)(C)C UZNHKBFIBYXPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims 2
- TWBYWOBDOCUKOW-UHFFFAOYSA-N isonicotinic acid Chemical compound OC(=O)C1=CC=NC=C1 TWBYWOBDOCUKOW-UHFFFAOYSA-N 0.000 claims 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 2
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 claims 2
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 claims 1
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 claims 1
- 239000005711 Benzoic acid Substances 0.000 claims 1
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- LVPMIMZXDYBCDF-UHFFFAOYSA-N isocinchomeronic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N=C1 LVPMIMZXDYBCDF-UHFFFAOYSA-N 0.000 claims 1
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- 230000002829 reductive effect Effects 0.000 description 6
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- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- AKGNIBXGIPMDLE-UHFFFAOYSA-N pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC=C1.OC(=O)C1=CC=NC=C1 AKGNIBXGIPMDLE-UHFFFAOYSA-N 0.000 description 2
- 125000001453 quaternary ammonium group Chemical class 0.000 description 2
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- DCXXMTOCNZCJGO-UHFFFAOYSA-N tristearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 description 2
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- 125000001340 2-chloroethyl group Chemical group [H]C([H])(Cl)C([H])([H])* 0.000 description 1
- VHBSECWYEFJRNV-UHFFFAOYSA-N 2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1O.OC(=O)C1=CC=CC=C1O VHBSECWYEFJRNV-UHFFFAOYSA-N 0.000 description 1
- UQAFVYFUQFLKPA-UHFFFAOYSA-N 3-methylbut-2-enoylazanium;chloride Chemical compound [Cl-].CC(C)=CC([NH3+])=O UQAFVYFUQFLKPA-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种抛光料浆组合物。根据本发明的一实施例的抛光料浆组合物包括:包含抛光粒子的抛光液;以及包含非离子高分子聚合物及选择比调节剂的添加液。本发明的抛光料浆组合物具有氧化硅膜和多晶硅膜的高抛光率,在半导体元件的浅槽隔离(STI)抛光之后没有留下杂质,并且能够减少氧化硅膜凹陷的量以及减少刮痕。
Description
技术领域
本发明涉及抛光料浆组合物。
背景技术
随着半导体元件越来越多样且高度集成化,开始使用一种能够形成细微图案的技术,由此使得半导体元件的表面结构越来越复杂,表面膜的阶梯差也越来越大。在制造半导体元件的过程中使用化学机械抛光(CMP,chemical mechanical polishing)的平坦化技术来去除形成在基板的特定膜上的阶梯差。多作为去除为了层间绝缘而过量成膜的绝缘膜的工艺、在层间绝缘膜(interlayer dielectric,ILD)与芯片(chip)之间进行绝缘的浅槽隔离(shallow trench isolation;STI)用绝缘膜的平坦化工艺、以及形成布线、接触插塞、接触过孔等金属导电膜的工艺使用。
STI工艺中需要一种选择性抛光特性,提高绝缘膜层的抛光率,降低多晶硅膜层的抛光率,从而保护图案多晶硅膜质。特别是过度抛光单元型(Cell Type)图案时,也要减少作为图案膜的多晶硅膜质的损失。
一方面,在STI工艺中抛光选择比过高时,埋设在所述沟槽的绝缘膜层由于过度抛光会发生凹陷(dishing),并且还会降低元件特性。特别是对于沟槽微小的元件,上述凹陷会导致活性区域与场区域间的阶梯差,对元件的性能及可靠性带来极大的负面影响。
发明内容
[发明要解决的问题]
本发明的目的在于解决上述问题,为此提供一种抛光料浆组合物,对氧化硅膜具有高抛光率的同时对氮化硅膜与多晶硅膜也具有高抛光率,抛光后在多晶硅膜上不存在杂质,并具有抑制凹陷的功能。
然而,本发明要解决的问题并非受限于上述言及的问题,未言及的其他问题将通过下面的记载由本领域普通技术人员所明确理解。
[解决问题的技术手段]
根据本发明的一侧面,提供一种抛光料浆组合物,包括:包括抛光粒子的抛光液;以及包括非离子高分子聚合物及选择比调节剂的添加液。
根据一实施例,所述非离子高分子聚合物是由包括羟基的聚醚骨架构成。
根据一实施例,所述非离子高分子聚合物包括从由甘油、二酰甘油、三酰甘油、聚甘油、聚甘油脂肪酸酯、聚氧化烯二甘油醚、聚氧化烯聚甘油醚及甘油聚甘油醚组成的组中选择的至少一种。
根据一实施例,所述非离子高分子聚合物的重均分子量是300至2000。
根据一实施例,所述非离子高分子聚合物是所述抛光料浆组合物的0.001重量%至1重量%。
根据一实施例,所述选择比调节剂包括有机酸,所述有机酸包括6至20个碳的芳香族环及一个以上的羧基(-COOH)。
根据一实施例,所述选择比调节剂包括从由苯甲酸(Benzoic acid)、苯乙酸(Phenylacetic acid)、萘甲酸(Naphthoic acid)、扁桃酸(Mandelic acid)、吡啶甲酸(Picolinic acid)、吡啶二甲酸(Dipicolinic acid)、烟碱酸(Nicotinic acid)、烟碱二酸(Dinicotinic acid)、异烟酸(Isonicotinic acid)、喹啉酸(Quinolinic acid)、邻氨基苯甲酸(anthranilic acid)、镰刀菌酸(Fusaric acid)、邻苯二甲酸(Phthalic acid)、间苯二甲酸(Isophthalic acid)、对苯二甲酸(Terephthalicacid)、甲基苯甲酸(Toluicacid)、水杨酸(Salicylic acid)、硝基苯甲酸(nitrobenzoic acid)及吡啶二羧酸(Pyridinedicarboxylic Acid)组成的组中选择的至少任一种。
根据一实施例,所述选择比调节剂是所述抛光料浆组合物的0.01重量%至5重量%。
根据一实施例,所述添加液,包括:包括非离子聚合物的分散助剂;包括阳离子聚合物的抛光调节剂;或两者全部。
根据一实施例,所述分散助剂包括从由聚乙二醇、聚丙二醇、聚乙烯基吡咯烷酮、聚氧化烯烷基醚、聚氧化烯烷基酯、聚氧乙烯甲醚、聚乙二醇磺酸、聚乙烯醇、聚环氧乙烷、聚环氧丙烷、聚烷基氧化物、聚氧乙烯氧化物、聚环氧乙烷-环氧丙烷共聚物、纤维素、甲基纤维素、甲基羟乙基纤维素、甲基羟丙基纤维素、羟乙基纤维素、羧甲基纤维素、羧甲基羟乙基纤维素、磺乙基纤维素及羧甲基磺乙基纤维素组成的组中选择的至少任一种。
根据一实施例,所述分散助剂是所述抛光料浆组合物的0.001重量%至1重量%。
根据一实施例,所述抛光调节剂包括从由聚(2-甲基丙烯酰氧乙基)三甲基氯化铵[Poly(2-methacryloxyethyltrimethylammonium chloride);PMAC]、聚(二烯丙基二甲基氯化铵)[poly(diallyldimethyl ammonium chloride)]、聚[双(2-氯乙基)醚-alt-1,3-双[3-(二甲基氨基)丙基]脲](Poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea])、具有1,4-二氯-2-丁烯和N,N,N’,N’-四甲基-2-丁烯-1,4-二胺的2,2’,2”-次氮基三乙醇聚合物(Ethanol,2,2',2”-nitrilotris-,polymer with1,4-dichloro-2-butene and N,N,N',N'-tetramethyl-2-butene-1,4-diamine)、羟乙基纤维素二甲基二烯丙基氯化铵共聚物(Hydroxyethyl cellulose dimethyldiallylammonium chloride copolymer)、丙烯酰胺/二烯丙基二甲基氯化铵共聚物(Copolymer of acrylamide and diallyldimethylammonium chloride)、丙烯酰胺/季铵化二甲基铵乙基甲基丙烯酸酯的共聚物(Copolymer of acrylamide and quaternizeddimethylammoniumethyl methacrylate)、丙烯酸/二烯丙基二甲基氯化铵的共聚物(Copolymer of acrylic acid and diallyldimethylammonium Chloride)、丙烯酰胺/二甲基氨基乙基甲基丙烯酸甲酯氯化物的共聚物(Acrylamide-dimethylaminoethylmethacrylate methyl chloride copolymer)、季铵化羟乙基纤维素(Quaternizedhydroxyethyl cellulose)、乙烯基吡咯烷酮/季铵化二甲基氨基乙基甲基丙烯酸酯共聚物(Copolymer of vinylpyrrolidone and quaternized dimethylaminoethylmethacrylate)、乙烯基吡咯烷酮/季铵化乙烯基咪唑的共聚物(Copolymer ofvinylpyrrolidone and quaternized vinylimidazole)、乙烯基吡咯烷酮/甲基丙烯酰胺丙基三甲基铵共聚物(Copolymer of vinylpyrrolidone and methacrylamidopropyltrimethylammonium)、聚(丙烯酰胺2-甲基丙烯酰氧乙基三甲基氯化铵(Poly(acrylamide2-methacryloxyethyltrimethyl ammonium chloride))、聚[2-(二甲基氨基)乙基甲基丙烯酸甲酯氯化物](poly[2-(dimethylaminoethyl methacrylate methyl chloride)]、聚[3-丙烯酰胺丙基三甲基氯化铵](poly[3-acrylamidopropyl trimethylammoniumchloride])、聚[3-甲基丙烯酰胺丙基三甲基氯化铵](poly[3-methacrylamidopropyltrimethylammonium chloride])、聚[氧乙烯(二甲基亚氨基)乙烯(二甲基亚氨基)二氯乙烯](Poly[oxyethylene(dimethylimino)ethylene(dimethylimino)ethylenedichloride])、丙烯酸/丙烯酰胺/二烯丙基二甲基氯化铵的三元共聚物(Terpolymer ofacrylic acid,acrylamide and diallyldimethylammonium Chloride)、丙烯酸/甲基丙烯酰胺丙基三甲基氯化铵/丙烯酸甲酯的三元共聚物(Terpolymer of acrylic acid,methacrylamidopropyl trimethylammonium chloride,and methyl acrylate)及乙烯基己内酰胺/乙烯基吡咯烷酮/季铵化乙烯基咪唑的三元共聚物(Terpolymer ofvinylcaprolactam,vinylpyrrolidone,and quaternized vinylimidazole)、聚(2-甲基丙烯酰氧乙基)磷酸胆碱-co-甲基丙烯酸正丁酯(Poly(2-methacryloxyethylphosphorylcholine-co-n-butyl methacrylate))、聚[(二甲基氨基)丙烯酸乙酯氯化苄季铵盐](PDMAEA BCQ)及聚[(二甲基氨基)丙烯酸乙酯甲基氯化物季铵盐](PDMAEA MCQ)组成的组中选择的至少任一种。
根据一实施例,所述抛光调节剂是所述抛光料浆组合物的0.001重量%至1重量%。
根据一实施例,所述抛光粒子包括从由金属氧化物、经有机物或无机物涂覆的金属氧化物,及胶体状态的所述金属氧化物组成的组中选择的至少任一种,所述金属氧化物包括从由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钡二氧化钛、氧化锗、氧化锰及氧化镁组成的组中选择的至少任一种。
根据一实施例,所述抛光粒子通过液相法制备,并进行分散使得抛光粒子表面具有正电荷。
根据一实施例,所述抛光粒子的大小包括5nm至150nm的一次粒子,30nm至300nm的二次粒子。
根据一实施例,所述抛光粒子是所述抛光料浆组合物的0.1重量%至10重量%。
根据一实施例,所述抛光料浆组合物的pH范围是3至6。
根据一实施例,还包括水;所述抛光液:水:添加液的比例是1:3至10:1至10。
根据一实施例,所述抛光料浆组合物的ζ电位范围是+5mV至+70mV。
根据一实施例,所述抛光用料浆组合物在半导体元件的浅槽隔离(shallowtrench isolation;STI)工艺中,
氧化硅膜:氮化硅膜的抛光选择比是2至6:1,氧化硅膜:多晶硅膜的抛光选择比是1至4:1。
[发明的效果]
根据本发明的抛光料浆组合物,对氧化硅膜与多晶硅膜具有高的抛光率,在半导体元件的浅槽隔离(shallow trench isolation;STI)抛光后,不存在杂质(residue),并能够减少氧化硅膜的凹陷(dishing),还能够减少刮痕。
附图说明
图1为显示本发明的比较例及实施例的使用抛光料浆组合物对晶片进行抛光后的抛光率的图表。
图2为显示本发明的比较例及实施例的使用抛光料浆组合物对晶片进行抛光后的晶片表面缺陷的照片。
具体实施方式
下面,参考附图对本发明的实施例进行详细说明。能够对下面说明的实施例进行多种变更,因此,实施例并非用于限制或限定本发明的范围。对于实施例的变更、等同物及其替代物均属于本发明要求的范围。
实施例中使用的术语仅用于说明特定实施例,并非用于限定。在内容中没有特别说明的情况下,单数表达包括复数含义。在本说明书中,“包括”或者“具有”等术语用于表达存在说明书中所记载的特征、数字、步骤、操作、构成要素、配件或其组合,并不排除还具有一个或以上的其他特征、数字、步骤、操作、构成要素、配件或其组合,或者这种可能性。
在没有其他定义的情况下,包括技术或者科学术语在内的在此使用的全部术语,都具有本领域普通技术人员所理解的通常的含义。通常使用的与词典定义相同的术语,应理解为与相关技术的通常的内容相一致的含义,在本申请中没有明确言及的情况下,不能过度理想化或解释为形式上的含义。
并且,在参照附图进行说明的过程中,与附图标记无关,相同的构成要素赋予相同的附图标记,并省略对此的重复的说明。在说明实施例的过程中,当判断对于相关公知技术的具体说明会不必要地混淆实施例时,省略对其详细说明。
下面,参照实施例对本发明的抛光料浆组合物进行具体说明。然而,本发明并非受限于实施例。
根据本发明的一侧面,提供一种抛光料浆组合物,包括:包括抛光粒子的抛光液;及包括非离子高分子聚合物及选择比调节剂的添加液。
根据本发明的抛光料浆组合物,对氧化硅膜与多晶硅膜具有高的抛光率,在半导体元件的浅槽隔离(shallow trench isolation;STI)抛光后,不存在杂质(residue),并能够减少氧化硅膜的凹陷(dishing),还能够减少刮痕。
根据一实施例,所述非离子高分子聚合物能够是由包括羟基(-OH)的聚醚骨架构成。
根据一实施例,所述非离子高分子聚合物包括从由甘油、二酰甘油、三酰甘油、聚甘油、聚甘油脂肪酸酯、聚氧化烯二甘油醚、聚氧化烯聚甘油醚及甘油聚甘油醚组成的组中选择的至少一种。
根据一实施例,所述非离子高分子聚合物的重均分子量能够是300至2000。当所述重均分子量不到300时,因为聚合膜保护膜的性能下降而降低抛光选择比,当所述重均分子量超过2000时,会发生凝结现象,提高粘度并降低抛光料浆组合物的保存稳定性。
根据一实施例,所述非离子高分子聚合物能够是所述抛光料浆组合物的0.001重量%至1重量%。当所述非离子高分子聚合物在所述抛光料浆组合物中不到0.001重量%时,会出现晶硅膜的抛光率不能得到提高的问题,当为1重量%以上时,会由于高分子网络而无法实现充分抛光,导致残留杂质的问题。
根据一实施例,所述选择比调节剂是对酸性物质起到碱的作用,对碱性物质起到酸的作用的化合物。
根据一实施例,所述选择比调节剂能够是包括6至20个碳的芳香族环及一个以上的羧基(-COOH)的有机酸。例如,所述有机酸的所述芳香族环内的碳原子能够置换为氮原子,还能够包括硝基、胺基、砜基、磷酸基、烷基、羟基等。更具体地,包括从由苯甲酸(Benzoic acid)、苯乙酸(Phenylacetic acid)、萘甲酸(Naphthoic acid)、扁桃酸(Mandelic acid)、吡啶甲酸(Picolinic acid)、吡啶二甲酸(Dipicolinic acid)、烟碱酸(Nicotinic acid)、烟碱二酸(Dinicotinic acid)、异烟酸(Isonicotinic acid)、喹啉酸(Quinolinic acid)、邻氨基苯甲酸(anthranilic acid)、镰刀菌酸(Fusaric acid)、邻苯二甲酸(Phthalic acid)、间苯二甲酸(Isophthalic acid)、对苯二甲酸(Terephthalicacid)、甲基苯甲酸(Toluic acid)、水杨酸(Salicylic acid)、硝基苯甲酸(nitrobenzoic acid)及吡啶二羧酸(Pyridinedicarboxylic Acid)组成的组中选择的至少任一种。
根据一实施例,所述选择比调节剂能够通过调节氮化硅膜的抛光率体现所期待的选择比,并起到改善凹陷的作用。并且还能够用于调节所述抛光料浆组合物的pH。
根据一实施例,所述选择比调节剂是所述抛光料浆组合物的0.01重量%至5重量%,从而将所述抛光料浆组合物的pH调节到3至6。当所述选择比调节剂在所述抛光料浆组合物中不到0.01重量%时,无法实现氧化硅膜、氮化硅膜及多晶硅膜的选择性抛光性能,从而无法获得所期待的抛光选择比,当超过5重量%时,会降低抛光料浆组合物的随着时间的稳定性。
根据一实施例,所述添加液还包括:包括非离子聚合物的分散助剂;包括阳离子聚合物的抛光调节剂;或两者全部。
根据一实施例,所述分散助剂包括从由聚乙二醇、聚丙二醇、聚乙烯基吡咯烷酮、聚氧化烯烷基醚、聚氧化烯烷基酯、聚氧乙烯甲醚、聚乙二醇磺酸、聚乙烯醇、聚环氧乙烷、聚环氧丙烷、聚烷基氧化物、聚氧乙烯氧化物、聚环氧乙烷-环氧丙烷共聚物、纤维素、甲基纤维素、甲基羟乙基纤维素、甲基羟丙基纤维素、羟乙基纤维素、羧甲基纤维素、羧甲基羟乙基纤维素、磺乙基纤维素及羧甲基磺乙基纤维素组成的组中选择的至少任一种。
根据一实施例,所述分散助剂用于维持所述抛光料浆组合物的分散稳定性,在所述抛光料浆组合物中是0.001重量%至1重量%。当所述分散助剂不到0.001重量%时,会降低对于多晶硅膜的自动抛光停止功能,当超过1重量%时,会在抛光料浆组合物内发生反应从而引起凝结现象,并导致出现刮痕的问题。
根据一实施例,能够是分子式内具有两个以上离子化的阳离子的抛光调节剂,也能够是包括两个以上活化为阳离子的氮的抛光调节剂。由此,能够调节阳离子性聚合物的粘度。所述阳离子性聚合物能够具有20cp至40cp的粘度。通过调节所述粘度,能够提高氮化硅膜抛光率,控制氧化硅膜抛光率从而控制氧化硅膜/氮化硅膜的选择比。
根据一实施例,所述阳离子性聚合物能够是季铵的形式。
根据一实施例,所述抛光调节剂包括从由聚(2-甲基丙烯酰氧乙基)三甲基氯化铵[Poly(2-methacryloxyethyltrimethylammonium chloride)、PMAC]、聚(二烯丙基二甲基氯化铵)[poly(diallyldimethyl ammonium chloride)]、聚[双(2-氯乙基)醚-alt-1,3-双[3-(二甲基氨基)丙基]脲](Poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea])、具有1,4-二氯-2-丁烯和N,N,N’,N’-四甲基-2-丁烯-1,4-二胺的2,2’,2”-次氮基三乙醇聚合物(Ethanol,2,2',2”-nitrilotris-,polymer with1,4-dichloro-2-butene and N,N,N',N'-tetramethyl-2-butene-1,4-diamine)、羟乙基纤维素二甲基二烯丙基氯化铵共聚物(Hydroxyethyl cellulose dimethyldiallylammonium chloride copolymer)、丙烯酰胺/二烯丙基二甲基氯化铵共聚物(Copolymer of acrylamide and diallyldimethylammonium chloride)、丙烯酰胺/季铵化二甲基铵乙基甲基丙烯酸酯的共聚物(Copolymer of acrylamide and quaternizeddimethylammoniumethyl methacrylate)、丙烯酸/二烯丙基二甲基氯化铵的共聚物(Copolymer of acrylic acid and diallyldimethylammonium Chloride)、丙烯酰胺/二甲基氨基乙基甲基丙烯酸甲酯氯化物的共聚物(Acrylamide-dimethylaminoethylmethacrylate methyl chloride copolymer)、季铵化羟乙基纤维素(Quaternizedhydroxyethyl cellulose)、乙烯基吡咯烷酮/季铵化二甲基氨基乙基甲基丙烯酸酯共聚物(Copolymer of vinylpyrrolidone and quaternized dimethylaminoethylmethacrylate)、乙烯基吡咯烷酮/季铵化乙烯基咪唑的共聚物(Copolymer ofvinylpyrrolidone and quaternized vinylimidazole)、乙烯基吡咯烷酮/甲基丙烯酰胺丙基三甲基铵共聚物(Copolymer of vinylpyrrolidone and methacrylamidopropyltrimethylammonium)、聚(丙烯酰胺2-甲基丙烯酰氧乙基三甲基氯化铵(Poly(acrylamide2-methacryloxyethyltrimethyl ammonium chloride))、聚[2-(二甲基氨基)乙基甲基丙烯酸甲酯氯化物](poly[2-(dimethylaminoethyl methacrylate methyl chloride])、聚[3-丙烯酰胺丙基三甲基氯化铵](poly[3-acrylamidopropyl trimethylammoniumchloride])、聚[3-甲基丙烯酰胺丙基三甲基氯化铵](poly[3-methacrylamidopropyltrimethylammonium chloride])、聚[氧乙烯(二甲基亚氨基)乙烯(二甲基亚氨基)二氯乙烯](Poly[oxyethylene(dimethylimino)ethylene(dimethylimino)ethylenedichloride])、丙烯酸/丙烯酰胺/二烯丙基二甲基氯化铵的三元共聚物(Terpolymer ofacrylic acid,acrylamide and diallyldimethylammonium Chloride)、丙烯酸/甲基丙烯酰胺丙基三甲基氯化铵/丙烯酸甲酯的三元共聚物(Terpolymer of acrylic acid,methacrylamidopropyl trimethylammonium chloride,and methyl acrylate)及乙烯基己内酰胺/乙烯基吡咯烷酮/季铵化乙烯基咪唑的三元共聚物(Terpolymer ofvinylcaprolactam,vinylpyrrolidone,and quaternized vinylimidazole)、聚(2-甲基丙烯酰氧乙基)磷酸胆碱-co-甲基丙烯酸正丁酯(Poly(2-methacryloxyethylphosphorylcholine-co-n-butyl methacrylate))、聚[(二甲基氨基)丙烯酸乙酯氯化苄季铵盐](PDMAEA BCQ)及聚[(二甲基氨基)丙烯酸乙酯甲基氯化物季铵盐](PDMAEA MCQ)组成的组中选择的至少任一种。
根据一实施例,所述抛光调节剂是所述抛光料浆组合物的0.001重量%至1重量%。当所述抛光调节剂在所述抛光料浆组合物中不到0.001重量%时,无法实现期待的抛光选择比,当超过1重量%时,由于对抛光膜质的选择性吸附性能,会出现过度的抛光抑制现象。
根据一实施例,所述抛光粒子包括从由金属氧化物、经有机物或无机物涂覆的金属氧化物,及胶体状态的所述金属氧化物组成的组中选择的至少任一种,所述金属氧化物包括从由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钡二氧化钛、氧化锗、氧化锰及氧化镁组成的组中选择的至少任一种。
根据一实施例,所述抛光粒子能够是分散为正电荷的二氧化铈。所述分散为正电荷的二氧化铈与活化为正电荷的添加液混合,能够体现更高阶梯差去除功能及自动抛光停止功能。
根据一实施例,所述抛光粒子能够通过液相法制备,并且能够分散从而使得抛光粒子表面具有正电荷。能够通过液相法制备所述抛光粒子,但并非限定于此。液相法是通过使抛光粒子前驱体在水溶液中发生化学反应,使结晶生长从而获得微粒子的溶胶-凝胶(sol-gel)法,或者是将抛光粒子离子在水溶液中进行沉淀的共沉法,以及在高温高压中形成抛光粒子的水热合成法等进行制备。利用液相法制备的抛光粒子得到分散使得抛光粒子的表面带有正电荷。
所述抛光粒子的形状能够是从由球形、角形、针形、以及板形组成的组中选择的至少一种,优选为球形。
根据一实施例,所述抛光粒子能够是单晶性的,但并非限定于此。当使用单晶性抛光粒子时,相比多晶性抛光粒子能够减少刮痕,改善凹陷(dishing)以及抛光后的洗涤性。
根据一实施例,所述抛光粒子的一次粒子大小是5nm至150nm,二次粒子大小是30nm至300nm。所述抛光粒子的平均粒径是能够通过扫描电子显微镜分析或动态光散射测量的视野范围内的多个粒子粒径的平均值。为确保粒子均匀性,所述一次粒子大小应为150nm以下,并且,当不到5nm时会降低抛光率。当所述二次粒子大小不到30nm时,会由于研磨产生过多的小粒子,降低洗涤性,并且,会在用于抛光工艺的基板、晶片等的表面产生过多缺陷,当超过300nm时,会因为过度抛光而难以调节选择比,并且存在发生凹陷、侵蚀及表面缺陷的可能性。
根据一实施例,所述抛光粒子除了单一大小的粒子外,还可以使用包括多分散(multi dispersion)形态的粒子分布的混合粒子,例如混合两种具有不同平均粒度的抛光粒子而形成双峰(bimodal)模式的粒子分布,或者混合三种具有不同平均粒度的抛光粒子而形成具有三个峰值的粒度分布。或者混合四种以上的具有不同平均粒度的抛光粒子而形成多分散形态的粒子分布。通过混合相对较大的抛光粒子和相对较小的抛光粒子能够实现更优秀的分散性,能够期待减少晶片表面的刮痕的效果。
根据一实施例,所述抛光粒子是所述抛光料浆组合物中的0.1重量%至10重量%。当所述抛光粒子在所述抛光料浆组合物中不到1重量%时,会出现降低抛光速度的问题,当超过10重量%时,抛光速度过高,抛光粒子数量增加,由于残留在表面的粒子吸附性,导致发生表面缺陷。
根据一实施例,所述抛光料浆组合物的pH范围是3至6。当所述抛光料浆组合物的pH超过上述范围时,会导致分散稳定性急剧下降,引起凝结的问题。
根据一实施例,所述抛光料浆组合物的制备工艺包括浓缩制备及稀释(Dilution)工艺。
根据一实施例,所述抛光料浆组合物还包括水,所述抛光液:水:添加液的比例是1:3至10:1至10。水能够包括例如去离子水、离子交换水及超纯水。当所述添加液的比例在1至4的范围时,添加液的比例越小越适合抛光大块(bulk)的高阶梯差。
根据本发明的一实施例,能够是在分别准备抛光液与添加液之后,在抛光前混合使用的二液型,也能够是抛光液与添加液混合在一起的一液型。当使用二液型时,在多晶硅膜的STI图案上不存在杂质(residue),提高防止凹陷的性能,具有高的选择比。
根据一实施例,所述抛光料浆组合物能够是具有正(positive)电荷的正料浆组合物。所述抛光料浆组合物的ζ电位范围是+5mV至+70mV。由于正电荷的抛光粒子,所述抛光料浆组合物能够是具有正(positive)电荷的正料浆组合物,保持高分散稳定性,因抛光粒子不发生凝结而减少刮痕。
根据一实施例,所述抛光用料浆组合物在半导体元件的浅槽隔离(shallowtrench isolation;STI)工艺中,氧化硅膜:氮化硅膜的抛光选择比是2至6:1,氧化硅膜:多晶硅膜的抛光选择比是1至4:1。
根据一实施例,所述多晶硅膜能够是未涂覆的多晶硅膜、涂覆磷(P)的多晶硅膜或两者全部。
根据一实施例,在对所述氮化硅膜或多晶硅膜进行抛光后,在氧化硅膜区域出现的凹陷量为以下。当所述抛光料浆组合物显示出过高的抛光选择比时,会由于氧化硅膜区域的过度抛光而增加凹陷的发生量,但通过包括由包括羟基的聚醚骨架构成的非离子高分子聚合物,能够降低凹陷发生量。
本发明的用于STI工艺的抛光料浆组合物,包括由包括羟基的聚醚骨架构成的非离子高分子聚合物,对涂覆磷(P)的多晶硅膜质具有高抛光率,提供不仅对氧化硅膜具有高的抛光率,对氮化硅膜与多晶硅膜质也具有高抛光率的料浆。
下面,参照实施例及比较例对本发明进行详细说明。但本发明的技术思想并非限定于或受限于此。
毯覆式晶片(Blanket wafer)抛光性能
[实施例]
制备抛光料浆组合物,粒子大小为60nm的胶体二氧化铈抛光粒子为5重量%、作为非离子高分子聚合物的重均分子量为750的聚甘油为0.5重量%、作为选择比调节剂的吡啶甲酸为0.25重量%,pH为4。
[比较例]
在通过固相法制备的粒子大小为60nm的胶体二氧化铈抛光粒子中添加聚丙烯酸作为分散剂对抛光粒子进行分散后,添加氨制备pH为8的阴离子性料浆组合物。
[抛光条件]
1.抛光装置:AP-300(300mm,KCTECH公司)
2.垫:IC 1000(DOW公司)
3.抛光时间:60秒
4.压板RPM(Platen RPM):93rpm
5.主轴RPM(Spindle RPM):87rpm
6.压力:3.5psi
7.流量(Flow rate):250ml/min
表1为使用实施例、比较例的抛光料浆组合物按照上述抛光条件对晶片进行抛光时的氧化硅膜、氮化硅膜、涂覆有磷(P)的多晶硅膜的抛光率(Removal Rate,RR)。
【表1】
图1为显示本发明的使用比较例及实施例的抛光料浆组合物对晶片进行抛光后的抛光率的图表。参照表1及图1,使用根据实施例的抛光料浆组合物进行抛光,相比利用比较例的抛光料浆组合物,对氧化硅膜具有高抛光率的同时,对于氮化硅膜以及涂覆磷(P)的多晶硅膜的同样具有高抛光率。
测量缺陷
对利用实施例,比较例的抛光料浆组合物抛光的基板的缺陷进行测量。
在对基板实施洗涤工艺时,先利用氨水、过氧化氢及水的混合洗涤液SC-1(Standard Cleaning 1)进行5秒洗涤工艺后,利用HF继续进行30秒洗涤工艺。缺陷测量装置是ATI-XP。
图2为显示本发明的利用比较例及实施例的抛光料浆组合物对晶片进行抛光后晶片表面的缺陷照片。比较例有145个,实施例有89个缺陷。
本发明的用于STI工艺的抛光料浆组合物包括胶体二氧化铈抛光粒子,包括聚甘油作为包括羟基的非离子高分子聚合物,由此,对涂覆磷(P)的多晶硅膜质具有高抛光率,并且不存在氧化硅膜杂质(residue),能够减少刮痕的发生。
综上,通过有限的附图对实施例进行了说明,本领域普通技术人员能够基于所述记载进行多种更改与变形。例如,所说明的技术按照与说明的方法不同的顺序执行,和/或所说明的构成要素按照与说明的方法不同的形态进行结合或组合,或者由其他构成要素或者等同物置换或代替,也能得到适当的结果。
由此,其他体现,其他实施例以及权利要求范围的等同物,均属于本发明的。
Claims (18)
1.一种抛光料浆组合物,包括:
包括抛光粒子的抛光液;以及
包括非离子高分子聚合物及选择比调节剂的添加液,所述选择比调节剂包括从由吡啶甲酸、吡啶二甲酸、烟碱酸、烟碱二酸和异烟酸组成的组中选择的至少一种;
其中所述非离子高分子聚合物包括从由聚甘油、聚甘油脂肪酸酯、聚氧化烯二甘油醚、聚氧化烯聚甘油醚及甘油聚甘油醚组成的组中选择的至少一种;所述非离子高分子聚合物是所述抛光料浆组合物的0.5重量%至1重量%;
所述抛光料浆组合物用在半导体元件的浅槽隔离工艺中用于抛光氧化硅膜、氮化硅膜和P-涂覆的多晶硅膜,氧化硅膜:氮化硅膜的抛光选择比是2至6:1,且氧化硅膜:多晶硅膜的抛光选择比是1至4:1;
所述抛光料浆组合物是具有显示正电荷的正料浆组合物;
所述抛光料浆组合物的ζ电位范围是+5mV至+70mV。
2.根据权利要求1所述的抛光料浆组合物,
所述非离子高分子聚合物的重均分子量是300至2000。
3.根据权利要求1所述的抛光料浆组合物,
所述选择比调节剂还包括从由苯甲酸、苯乙酸、萘甲酸、扁桃酸、喹啉酸、邻氨基苯甲酸、镰刀菌酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、甲基苯甲酸、水杨酸、硝基苯甲酸及吡啶二甲酸组成的组中选择的至少一种。
4.根据权利要求1所述的抛光料浆组合物,
所述选择比调节剂是所述抛光料浆组合物的0.01重量%至5重量%。
5.根据权利要求1所述的抛光料浆组合物,
所述添加液,包括:
包括非离子聚合物的分散助剂;
包括阳离子聚合物的抛光调节剂;或
两者全部。
6.根据权利要求5所述的抛光料浆组合物,
所述分散助剂包括从由聚乙二醇、聚丙二醇、聚乙烯基吡咯烷酮、聚氧化烯烷基醚、聚氧化烯烷基酯、聚乙二醇磺酸、聚乙烯醇、聚烷基氧化物、聚氧乙烯氧化物、纤维素、甲基纤维素、甲基羟乙基纤维素、甲基羟丙基纤维素、羟乙基纤维素、羧甲基纤维素、羧甲基羟乙基纤维素、磺乙基纤维素及羧甲基磺乙基纤维素组成的组中选择的至少一种。
7.根据权利要求5所述的抛光料浆组合物,
所述分散助剂包括从由聚氧乙烯甲醚、聚环氧乙烷、聚环氧丙烷、聚环氧乙烷-环氧丙烷共聚物组成的组中选择的至少一种。
8.根据权利要求5所述的抛光料浆组合物,
所述分散助剂是所述抛光料浆组合物的0.001重量%至1重量%。
9.根据权利要求5所述的抛光料浆组合物,
所述抛光调节剂包括从由聚(2-甲基丙烯酰氧乙基)三甲基氯化铵、聚(二烯丙基二甲基氯化铵)、聚[双(2-氯乙基)醚-交替-1,3-双[3-(二甲基氨基)丙基]脲]、具有1,4-二氯-2-丁烯和N,N,N’,N’-四甲基-2-丁烯-1,4-二胺的2,2’,2”-次氮基三乙醇聚合物、羟乙基纤维素二甲基二烯丙基氯化铵共聚物、丙烯酰胺/二烯丙基二甲基氯化铵共聚物、丙烯酰胺/季铵化二甲基铵乙基甲基丙烯酸酯的共聚物、丙烯酸/二烯丙基二甲基氯化铵的共聚物、丙烯酰胺/二甲基氨基乙基甲基丙烯酸甲酯氯化物的共聚物、季铵化羟乙基纤维素、乙烯基吡咯烷酮/季铵化二甲基氨基乙基甲基丙烯酸酯共聚物、乙烯基吡咯烷酮/季铵化乙烯基咪唑的共聚物、乙烯基吡咯烷酮/甲基丙烯酰胺丙基三甲基铵共聚物、聚(丙烯酰胺2-甲基丙烯酰氧乙基三甲基氯化铵、聚[2-(二甲基氨基)乙基甲基丙烯酸甲酯氯化物]、聚[3-丙烯酰胺丙基三甲基氯化铵]、聚[3-甲基丙烯酰胺丙基三甲基氯化铵]、聚[氧乙烯(二甲基亚氨基)乙烯(二甲基亚氨基)二氯乙烯]、丙烯酸/丙烯酰胺/二烯丙基二甲基氯化铵的三元共聚物、丙烯酸/甲基丙烯酰胺丙基三甲基氯化铵/丙烯酸甲酯的三元共聚物及乙烯基己内酰胺/乙烯基吡咯烷酮/季铵化乙烯基咪唑的三元共聚物、聚(2-甲基丙烯酰氧乙基)磷酸胆碱-共-甲基丙烯酸正丁酯、聚[(二甲基氨基)丙烯酸乙酯氯化苄季铵盐]及聚[(二甲基氨基)丙烯酸乙酯甲基氯化物季铵盐]组成的组中选择的至少一种。
10.根据权利要求5所述的抛光料浆组合物,
所述抛光调节剂是所述抛光料浆组合物的0.001重量%至1重量%。
11.根据权利要求1所述的抛光料浆组合物,
所述抛光粒子包括从由金属氧化物、经有机物或无机物涂覆的金属氧化物组成的组中选择的至少一种,
所述金属氧化物包括从由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、氧化锗、氧化锰及氧化镁组成的组中选择的至少一种。
12.根据权利要求11所述的抛光料浆组合物,
所述抛光粒子包括胶体状态的所述金属氧化物。
13.根据权利要求1所述的抛光料浆组合物,
所述抛光粒子通过液相法制备,并进行分散使得抛光粒子表面具有正电荷。
14.根据权利要求1所述的抛光料浆组合物,
所述抛光粒子的大小包括5nm至150nm的一次粒子,30nm至300nm的二次粒子。
15.根据权利要求1所述的抛光料浆组合物,
所述抛光粒子是所述抛光料浆组合物的0.1重量%至10重量%。
16.根据权利要求1所述的抛光料浆组合物,
所述抛光料浆组合物的pH范围是3至6。
17.根据权利要求1所述的抛光料浆组合物,
还包括水;
所述抛光液:水:添加液的比例是1:3至10:1至10。
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TW201816060A (zh) * | 2016-09-13 | 2018-05-01 | 日商旭硝子股份有限公司 | 研磨劑及研磨方法、與研磨用添加液 |
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CN113242891A (zh) | 2021-08-10 |
TW202024258A (zh) | 2020-07-01 |
WO2020130251A1 (ko) | 2020-06-25 |
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TWI729488B (zh) | 2021-06-01 |
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