SG10201506169XA - Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devicesInfo
- Publication number
- SG10201506169XA SG10201506169XA SG10201506169XA SG10201506169XA SG10201506169XA SG 10201506169X A SG10201506169X A SG 10201506169XA SG 10201506169X A SG10201506169X A SG 10201506169XA SG 10201506169X A SG10201506169X A SG 10201506169XA SG 10201506169X A SG10201506169X A SG 10201506169XA
- Authority
- SG
- Singapore
- Prior art keywords
- mechanical
- electrical
- optical devices
- chemically mechanically
- substrates
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/24—Homopolymers or copolymers of amides or imides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38072110P | 2010-09-08 | 2010-09-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201506169XA true SG10201506169XA (en) | 2015-09-29 |
Family
ID=45810173
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013010632A SG188206A1 (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| SG10201506169XA SG10201506169XA (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013010632A SG188206A1 (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20130200038A1 (en) |
| EP (1) | EP2614121B1 (en) |
| JP (1) | JP5965907B2 (en) |
| KR (1) | KR101908280B1 (en) |
| CN (1) | CN103097476B (en) |
| IL (1) | IL224615B (en) |
| MY (1) | MY170196A (en) |
| RU (1) | RU2607214C2 (en) |
| SG (2) | SG188206A1 (en) |
| TW (1) | TWI538971B (en) |
| WO (1) | WO2012032461A1 (en) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI598434B (en) * | 2010-09-08 | 2017-09-11 | 巴斯夫歐洲公司 | Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts |
| US9070632B2 (en) | 2010-10-07 | 2015-06-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| CN103764775B (en) | 2011-09-07 | 2016-05-18 | 巴斯夫欧洲公司 | Chemically mechanical polishing (CMP) composition that comprises glycosides |
| SG11201403505UA (en) * | 2011-12-21 | 2014-07-30 | Basf Se | Method for manufacturing cmp composition and application thereof |
| JP2016178099A (en) * | 2013-08-09 | 2016-10-06 | コニカミノルタ株式会社 | Polishing liquid for cmp |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| EP3099756A4 (en) * | 2014-01-31 | 2017-08-02 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) |
| JP2015227446A (en) * | 2014-05-08 | 2015-12-17 | 花王株式会社 | Polishing liquid composition for sapphire plate |
| CN106574147A (en) * | 2014-08-01 | 2017-04-19 | 3M创新有限公司 | Polishing solutions and methods of using same |
| US9551075B2 (en) * | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
| JP6393231B2 (en) * | 2015-05-08 | 2018-09-19 | 信越化学工業株式会社 | Polishing agent for synthetic quartz glass substrate and method for polishing synthetic quartz glass substrate |
| JP2017013183A (en) * | 2015-07-01 | 2017-01-19 | 不二越機械工業株式会社 | Polishing device |
| WO2017081835A1 (en) * | 2015-11-10 | 2017-05-18 | 信越化学工業株式会社 | Polishing agent for synthetic quarts glass substrate, process for producing same, and method for polishing synthetic quarts glass substrate |
| KR102574842B1 (en) * | 2015-12-17 | 2023-09-06 | 솔브레인 주식회사 | Chemical mechanical polishing slurry and polishing method using the same |
| US11339308B2 (en) * | 2016-03-01 | 2022-05-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| JP6957265B2 (en) * | 2016-09-29 | 2021-11-02 | 花王株式会社 | Abrasive liquid composition |
| JP2019050307A (en) | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | Polishing method, and composition for polishing and method for manufacturing the same |
| US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| JP7045171B2 (en) * | 2017-11-28 | 2022-03-31 | 花王株式会社 | Abrasive liquid composition |
| KR102442600B1 (en) * | 2018-11-09 | 2022-09-14 | 주식회사 케이씨텍 | Polishing slurry composition |
| US11078417B2 (en) * | 2018-06-29 | 2021-08-03 | Versum Materials Us, Llc | Low oxide trench dishing chemical mechanical polishing |
| US20200002607A1 (en) * | 2018-06-29 | 2020-01-02 | Versum Materials Us, Llc | Low Oxide Trench Dishing Chemical Mechanical Polishing |
| US11072726B2 (en) * | 2018-06-29 | 2021-07-27 | Versum Materials Us, Llc | Low oxide trench dishing chemical mechanical polishing |
| CN108587478B (en) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | Modified nano silicon dioxide composite polishing solution and application thereof |
| US11718767B2 (en) * | 2018-08-09 | 2023-08-08 | Versum Materials Us, Llc | Chemical mechanical planarization composition for polishing oxide materials and method of use thereof |
| CN109536038A (en) * | 2018-11-30 | 2019-03-29 | 东莞市晶博光电有限公司 | A kind of polishing fluid and the polishing method using the polishing fluid |
| US11326076B2 (en) | 2019-01-25 | 2022-05-10 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives |
| CN113004802B (en) * | 2019-12-20 | 2024-04-12 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN114621683A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method thereof |
| CN116000782B (en) * | 2022-12-27 | 2023-09-19 | 昂士特科技(深圳)有限公司 | Chemical mechanical polishing composition for metal alloy CMP |
| CN118359995B (en) * | 2024-06-19 | 2024-08-16 | 嘉兴市小辰光伏科技有限公司 | Monocrystalline silicon alkali polishing additive for scale-shaped tower base and application method thereof |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU490811A1 (en) * | 1973-07-06 | 1975-11-05 | Харьковский Институт Радиоэлектроники | Finishing and polishing paste |
| JP2000109816A (en) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | Preparation of polishing agent slurry |
| US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
| US6471735B1 (en) * | 1999-08-17 | 2002-10-29 | Air Liquide America Corporation | Compositions for use in a chemical-mechanical planarization process |
| US6429133B1 (en) * | 1999-08-31 | 2002-08-06 | Micron Technology, Inc. | Composition compatible with aluminum planarization and methods therefore |
| US6540935B2 (en) * | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| KR100464429B1 (en) * | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | Chemical mechanical polishing slurry and chemical mechanical polishing method using the same |
| US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| GB0222843D0 (en) * | 2002-10-02 | 2002-11-06 | Basf Ag | Microbicidal compositions and their use |
| US20050287931A1 (en) * | 2002-10-25 | 2005-12-29 | Showa Denko K.K. | Polishing slurry and polished substrate |
| CN1213118C (en) * | 2002-12-13 | 2005-08-03 | 清华大学 | Polishing slurry for disk base sheet of memory hard disk |
| JP4202172B2 (en) * | 2003-03-31 | 2008-12-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP2007531631A (en) * | 2003-07-11 | 2007-11-08 | ダブリュー・アール・グレイス・アンド・カンパニー−コネチカット | Abrasive particles for chemical mechanical polishing |
| KR100637772B1 (en) * | 2004-06-25 | 2006-10-23 | 제일모직주식회사 | High Selectivity CMP slurry for STI Process in Semiconductor manufacture |
| US20060216935A1 (en) * | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
| DE102005032427A1 (en) * | 2005-07-12 | 2007-01-18 | Degussa Ag | Aluminum oxide dispersion |
| US20070077865A1 (en) * | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| CN101291778B (en) * | 2005-10-19 | 2012-06-20 | 日立化成工业株式会社 | Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same |
| DE102006061891A1 (en) * | 2006-12-28 | 2008-07-03 | Basf Se | Composition for polishing surfaces, especially of semiconductors, comprises a lanthanide oxide abrasive, a polymeric dispersant, a polysaccharide gelling agent and water |
| EP2437285A2 (en) * | 2007-03-26 | 2012-04-04 | JSR Corporation | Chemical mechanical polishing method for semiconductor device using an aqueous dispersion |
| CN101033374A (en) * | 2007-04-13 | 2007-09-12 | 中国地质大学（武汉） | High-purity nano diamond polishing liquid and preparing method thereof |
| WO2009110729A1 (en) * | 2008-03-06 | 2009-09-11 | Lg Chem, Ltd. | Cmp slurry and a polishing method using the same |
| KR101256551B1 (en) * | 2008-03-06 | 2013-04-19 | 주식회사 엘지화학 | Cmp slurry and polishing method using the same |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| US20110244184A1 (en) * | 2010-04-01 | 2011-10-06 | Solarworld Industries America, Inc. | Alkaline etching solution for texturing a silicon wafer surface |
-
2011
- 2011-09-06 CN CN201180043273.9A patent/CN103097476B/en not_active Expired - Fee Related
- 2011-09-06 KR KR1020137008871A patent/KR101908280B1/en active IP Right Grant
- 2011-09-06 JP JP2013527717A patent/JP5965907B2/en not_active Expired - Fee Related
- 2011-09-06 RU RU2013115239A patent/RU2607214C2/en not_active IP Right Cessation
- 2011-09-06 WO PCT/IB2011/053884 patent/WO2012032461A1/en active Application Filing
- 2011-09-06 US US13/820,765 patent/US20130200038A1/en not_active Abandoned
- 2011-09-06 SG SG2013010632A patent/SG188206A1/en unknown
- 2011-09-06 SG SG10201506169XA patent/SG10201506169XA/en unknown
- 2011-09-06 TW TW100132008A patent/TWI538971B/en not_active IP Right Cessation
- 2011-09-06 MY MYPI2013000777A patent/MY170196A/en unknown
- 2011-09-06 EP EP11823139.8A patent/EP2614121B1/en not_active Not-in-force
-
2013
- 2013-02-07 IL IL224615A patent/IL224615B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012032461A1 (en) | 2012-03-15 |
| IL224615B (en) | 2018-11-29 |
| CN103097476A (en) | 2013-05-08 |
| TW201213469A (en) | 2012-04-01 |
| EP2614121A4 (en) | 2016-03-09 |
| EP2614121A1 (en) | 2013-07-17 |
| TWI538971B (en) | 2016-06-21 |
| KR101908280B1 (en) | 2018-10-16 |
| MY170196A (en) | 2019-07-09 |
| KR20130133174A (en) | 2013-12-06 |
| US20130200038A1 (en) | 2013-08-08 |
| RU2013115239A (en) | 2014-10-20 |
| RU2607214C2 (en) | 2017-01-10 |
| JP2013541609A (en) | 2013-11-14 |
| EP2614121B1 (en) | 2019-03-06 |
| JP5965907B2 (en) | 2016-08-10 |
| SG188206A1 (en) | 2013-04-30 |
| CN103097476B (en) | 2016-02-17 |
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