CN101033374A - High-purity nano diamond polishing liquid and preparing method thereof - Google Patents
High-purity nano diamond polishing liquid and preparing method thereof Download PDFInfo
- Publication number
- CN101033374A CN101033374A CNA2007100518716A CN200710051871A CN101033374A CN 101033374 A CN101033374 A CN 101033374A CN A2007100518716 A CNA2007100518716 A CN A2007100518716A CN 200710051871 A CN200710051871 A CN 200710051871A CN 101033374 A CN101033374 A CN 101033374A
- Authority
- CN
- China
- Prior art keywords
- agent
- nano diamond
- wetting
- kinds
- polishing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Abstract
The invention relates to a kind of high purity nano-scale diamond polishing slurry for ultra-precision processing and its preparation. The high-purity polishing slurry is prepared with nano-scale diamond, wetting agent, surface modification agent, dispersing agent, chemical additives and water, and the percentage of the raw materials by weight share are as follow: 0.05~10% of the nano-scale diamond, 0.01~2% of the wetting agent, 1~5% of the surface modification agent, 0.1~10% of the dispersing agent, 0.2~1% of the chemical additives, 88.69~98.64% of water. The amounts of all the materials are weighted as 100%. The amounts of the described wetting agent, surface modification agent, dispersing agent, and chemical additives are referred to solid content. The purity of the nano-scale diamond is 99.9% and the particle size of distribution is 10~200 nm.
Description
Technical field
The invention belongs to ultraprecision grinding polishing technology field, particularly the ultraprecise processing preparation method of high-purity nano diamond polishing liquid and this diamond polishing liquid.
Background technology
Along with the development of little sodium technology, the processing of device develops towards the direction of ultraprecise processing, and this just has higher requirement to the precise finiss polishing technology.Microelectronics quadruples with the integrated level every 3 years chips, and characteristic dimension is dwindled 1/3 speed development, and the characteristic line breadth of current chip is 0.125 μ m, expects 2010 and will reach 0.05 μ m.Hard disc of computer develops very rapid on size and store content, and the flight controlling precision of hard disc magnetic head improves constantly, and flying height in 2002 has dropped to 12nm, and the flight controlling precision is controlled at about 3nm.If the head surface roughness is excessive, the structure that the one side cut can destroy read head makes its loss of function.In addition, because flying height is very low, big surfaceness or surperficial stain can cause the phenomenon of " drawing dish ", destroy disk.Again it because head surface protective membrane thickness reached 3nm, the bigger surfaceness and the existence of stain can cause all that the protective membrane of subregion is too thin maybe can not to be covered even come off, and cause corroding problem such as Elements Diffusion and occur.The development in these fields has proposed higher requirement to polishing fluid with purity, the size-grade distribution of abrasive material, and the high-accuracy polishing machine of the automatic feed liquor of Chu Xianing is also had higher requirement to the stability of polishing fluid subsequently.
Liu Qirong sends out " fine abrasive agent and preparation technology thereof " (publication number CN 33229A) clear and discloses a kind of method of making the oil base polishing fluid with Nano diamond; A kind of polishing composition and finishing method (publication number CN 1384166A) thereof that is used for the memory, hard disk and magnetic head surface finish invented on the peak of Shenzhen Na Ke industrial corporation etc.; Awl is built refined grade and is also disclosed a kind of lapping oil preparation method who is used for the memory, hard disk and magnetic head polishing; The related polishing fluid of above-mentioned patent is the oil base polishing fluid, relates to the preparation method (publication number CN 1560161A) of a kind of water-base nano diamond polishing liquid that has only the big invention such as grade of the Zhu Yong of Changsha Mining ﹠ Metallurgy Inst of water base polishing fluid; But employed abrasive material is that the purity of diadust is not high in these polishing fluids.And fields such as hard disc of computer magnetic head, semi-conductor silicon chip, artificial crystal, jewel are more and more higher to Ultraprecise polished requirement thereupon, and are also more and more urgent to the demand of the high-purity nano diamond polishing liquid that has good stability.
The stability of polishing fluid generally is no less than 3 months.For ultraprecise grinding and polishing, the high precision polishing machine of feed liquor is necessary automatically.This just has higher requirement to the stability of polishing fluid.If sedimentation has taken place polishing process kind polishing fluid or reunion has taken place abrasive material, will produce huge harm for polished surface so.
Summary of the invention
The object of the present invention is to provide a kind ofly have good stability, polishing efficiency height, high-purity nano diamond polishing liquid that polishing effect is good and preparation method thereof.
To achieve these goals, technical scheme of the present invention is: a kind of high-purity nano diamond polishing liquid, it is characterized in that it is mainly formed by Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water (deionized water) feedstock production, the shared weight percent of each raw material is:
Nano diamond: 0.05～10%;
Wetting agent: 0.01～2%;
Surface-modifying agent: 1～5%;
Dispersion agent: 0.1～10%;
Chemical additive: 0.2～1%;
Water: 88.69～98.64%; Each raw material weight per-cent sum is 100%;
Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively; The purity of described Nano diamond is (to contain 99.9%) more than 99.9%; Size-grade distribution is 10～200nm.
The preparation method of above-mentioned a kind of high-purity nano diamond polishing liquid is characterized in that it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: 0.05～10%, wetting agent: 0.01～2%, surface-modifying agent: 1～5%, dispersion agent: 0.1～10%, chemical additive: 0.2～1%, water: 88.69～98.64%, each raw material weight per-cent sum is 100%; Choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively;
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 10-30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby;
3) water intaking mixes with dispersion agent, surface-modifying agent, adds in the above-mentioned diadust after wetting ultrasonicly or stir (making the diadust modification) then, makes mixed solution;
4) according to the requirement of polishing workpiece to polishing fluid, add pH value conditioning agent and regulate pH value, stirring or ultrasonic makes the system pH value between 6.5～10, is made into suspension;
5) add chemical additive in the suspension, stirring or ultrasonic can make high-purity nano diamond polishing liquid.
Described wetting agent is any one or any mixing that (contains any two kinds) more than two kinds in stearic acid, oilstone acid, citric acid, the oxalic acid, and is any when (containing any two kinds) more than two kinds and mixing, and is any proportioning.
Described surface-modifying agent is a sodium laurylsulfonate, sodium lauryl sulphate, Sodium hexametaphosphate 99, sodium polyphosphate, water glass, ethanol, ethylene glycol, glycol ether, polyoxyethylene glycol, 1,2 propylene glycol, 1,3 propylene glycol, 1,3 butyleneglycols, 1,4 butyleneglycols, glycerine, silane coupling agent, the aluminate coupling agent, fatty alcohol-polyoxyethylene ether, polyoxyethylene sorbitol, polyoxyethylene fatty acid, polyoxypropylene N.F,USP MANNITOL, the cetyl trimethyl Sodium Bromide, in the dimethyl dodecyl amine oxide any one or any mixing that (contains any two kinds) more than two kinds, any when (containing any two kinds) more than two kinds and mixing, be any proportioning.
Described dispersion agent is: DisperByk190, RF5040, Solsperse, Disperse750W, Disperse630, Disperse650, SU296 (LYCHEM), W22 (SHINCHEM), polyvinyl alcohol, polyvinyl alcohol and polystyrene block copolymer, polyoxyethylene polyoxypropylene block type polyethers, poly-two sections multipolymers of carboxyl siloxanes polyoxyethylene glycol, methylcellulose gum, methylcellulose gum contracts, in the ethyl cellulose sodium any one or any mixing that (contains any two kinds) more than two kinds, any when (containing any two kinds) more than two kinds and mixing, be any proportioning.
Described pH regulator agent is any one or any mixing that (contains any two kinds) more than two kinds in ammoniacal liquor, sodium hydroxide, thanomin, trolamine, acetate, the oxalic acid, and is any when (containing any two kinds) more than two kinds and mixing, and is any proportioning.
Described chemical additive is the mixing of any one or two kinds in polyoxyethylene nonylphenol ether, the fatty alcohol-polyoxyethylene ether, two kinds when mixing, is any proportioning.
The invention has the beneficial effects as follows:
1, the present invention at first adopts surface-modifying agent that diadust is carried out mechanochemical modification, and then adds dispersion agent and make Nano diamond homodisperse in solution, thereby prepared high-purity nano diamond polishing liquid has good dispersion stabilization.
2, to use purity be that Nano diamond more than 99.9% is abrasive material to high-purity nano diamond polishing liquid of the present invention, the weight percentage of Nano diamond micro mist is 0.05～10% in the high-purity nano diamond polishing liquid, if the Nano diamond powder content is very few, polishing speed will reduce; If Nano diamond micro mist (being abrasive material) too high levels is difficult to it is evenly dispersed in the water (being deionized water), be unfavorable for polishing.The employed Nano diamond micro mist of high-purity nano diamond polishing liquid size-grade distribution is between 10～200nm, if Nano diamond micro mist (being abrasive material) particulate median size is greater than above-mentioned scope, the surfaceness of processed head surface is strengthened, and produce cut.
The high-purity nano diamond polishing liquid of the present invention's preparation has higher grinding speed (being the polishing efficiency height), can prevent that polished surface from not producing cut, stain, the residual surface imperfection of particle in the process of polishing; The surfaceness of product can be reduced to 0.1nm～1nm, have the good characteristics of polishing effect.
3, the acid-basicity that experiment showed, polishing fluid can produce bigger influence to the corrosion condition on polishing material surface; The pH value of polishing fluid is too high or too low all can to produce corrosion to the surface of material; Therefore, the pH value of polishing fluid should be controlled at 6.5～10.
4, wetting diadust is in order better to disperse diadust, after adamantine suspension preparation finishes, to add chemical additive in suspension, mainly plays antistatic and effect such as sterilization and anticorrosion.
The present invention is used for ultraprecise processing such as hard disc of computer magnetic head, semi-conductor silicon chip, artificial crystal, high hard pottery, jewel, metallographic and uses.
Description of drawings
Fig. 1 does not polish silicon single crystal 100 power microscope figure.
Fig. 2 is a polishing silicon single crystal scanning electron microscope diagram
Embodiment
In order to understand the present invention better, further illustrate content of the present invention below in conjunction with embodiment, but content of the present invention not only is confined to the following examples.
Medicine such as used wetting agent, surface-modifying agent, dispersion agent, chemical additive, pH regulator agent is common medicine in the method for the present invention.The used equipment of method of the present invention all is known devices of using always.
Embodiment 1:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 0.05%: surface-modifying agent 0.01%: dispersion agent 1%: chemical additive 0.1%: water 0.2%: 98.64%, choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Annotate: wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively.
The purity of described Nano diamond is 99.9%, and size-grade distribution is 10nm; Described wetting agent is stearic acid and oilstone acid, and stearic acid, the shared weight percent of oilstone acid respectively account for 0.005%; Described surface-modifying agent is sodium laurylsulfonate and sodium lauryl sulphate, and sodium laurylsulfonate, the shared weight percent of sodium lauryl sulphate respectively account for 0.5%; Described dispersion agent is: DisperByk190 and RF5040, and the shared weight percent of DisperByk190, RF5040 respectively accounts for 0.05%; Described chemical additive is polyoxyethylene nonylphenol ether and fatty alcohol-polyoxyethylene ether, and polyoxyethylene nonylphenol ether, the shared weight percent of fatty alcohol-polyoxyethylene ether respectively account for 0.1%.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 10min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) remove ionized water and mix, add then in the above-mentioned diadust after wetting and stir 10min (making the diadust modification), make mixed solution with dispersion agent, surface-modifying agent.
4) according to the requirement of polishing workpiece to polishing fluid, add pH value conditioning agent and regulate pH value, ultrasonic 10min makes the system pH value 6.5, is made into suspension; Described pH regulator agent is any proportioning mixture of ammoniacal liquor and sodium hydroxide.
5) add chemical additive in the suspension, stir and ultrasonic 0.5 hour, can make high-purity nano diamond polishing liquid.
Embodiment 2:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 1%: surface-modifying agent 0.5%: dispersion agent 1%: chemical additive 0.2%: water 0.2%: 97.1%, respectively choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Annotate: wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively.
The purity of described Nano diamond is 99.9%, granularity is 100nm; Described wetting agent is a citric acid; Described surface-modifying agent is a Sodium hexametaphosphate 99; Described dispersion agent is an ethyl cellulose sodium; Described chemical additive is a fatty alcohol-polyoxyethylene ether.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 10min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) remove ionized water and mix, add ultrasonic 5min in the above-mentioned diadust after wetting then, make mixed solution with dispersion agent, surface-modifying agent.
4) according to the requirement of polishing workpiece to polishing fluid, add with sodium hydroxide and regulate pH to 8, stirring or ultrasonic is made into suspension.
5) add chemical additive in the suspension, ultrasonic 30min can make high-purity nano diamond polishing liquid.
Embodiment 3:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 1%: surface-modifying agent 0.05%: dispersion agent 1%: chemical additive 0.1%: water 0.2%: 97.65%, choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Annotate: wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively.
The purity of Nano diamond is 99.9%, granularity is 125nm; Described wetting agent is an oxalic acid; Described dispersion agent is Disperse750W; Described surface-modifying agent is water glass and 1,4 butyleneglycol, and water glass, the shared weight percent of 1,4 butyleneglycol respectively account for 0.5%, 0.5%; Described chemical additive is a polyoxyethylene nonylphenol ether.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) water intaking mixes with dispersion agent, surface-modifying agent, adds ultrasonic 10min in the above-mentioned diadust after wetting then, makes mixed solution.
4) mechanical stirring is regulated pH value to 9 with ammoniacal liquor, is made into suspension.
5) add chemical additive in the suspension, ultrasonic 20min can make high-purity nano diamond polishing liquid.
Embodiment 4:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 1%: surface-modifying agent 0.05%: dispersion agent 1%: chemical additive 0.2%: water 0.2%: 97.55%, each raw material weight per-cent sum is 100%; Choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively;
The purity of described Nano diamond is 99.9%, granularity is 125nm; Described wetting agent is an oxalic acid; Described dispersion agent is Dispersbyk-190; Described surface-modifying agent is a glycerine, and described chemical additive is a polyoxyethylene nonylphenol ether.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) water intaking mixes with dispersion agent, surface-modifying agent, adds then in the above-mentioned diadust after wetting to stir 30min, makes mixed solution.
4) regulate pH value to 7 with ammoniacal liquor, stir 30min, be made into suspension.
5) add chemical additive in the suspension, stirring or ultrasonic can make high-purity nano diamond polishing liquid.
Embodiment 5:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 10%: surface-modifying agent 0.01%: dispersion agent 1%: chemical additive 0.1%: water 0.2%: 88.69%, each raw material weight per-cent sum is 100%; Choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively;
The purity of described Nano diamond is 99.99%; Size-grade distribution is 200nm; Described wetting agent is a stearic acid; Described surface-modifying agent is a silane coupling agent; Described dispersion agent is a methylcellulose gum; Described chemical additive is a fatty alcohol-polyoxyethylene ether.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) water intaking mixes with dispersion agent, surface-modifying agent, adds then in the above-mentioned diadust after wetting to stir (making the diadust modification), makes mixed solution.
4) according to the requirement of polishing workpiece to polishing fluid, add pH value conditioning agent and regulate pH value, stirring or ultrasonic makes the system pH value between 10, is made into suspension.
5) add chemical additive acetate in the suspension, ultrasonic, can make high-purity nano diamond polishing liquid.
Embodiment 6:
A kind of preparation method of high-purity nano diamond polishing liquid, it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: wetting agent 1.31%: surface-modifying agent 2%: dispersion agent 5%: chemical additive 2%: water 1%: 88.69%, choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively;
The purity of described Nano diamond is 99.99%; Size-grade distribution is 200nm; Described wetting agent is oilstone acid; Described surface-modifying agent is a dimethyl dodecyl amine oxide; Described chemical additive is a polyoxyethylene nonylphenol ether.
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby.
3) water intaking mixes with dispersion agent, surface-modifying agent, adds then in the above-mentioned diadust after wetting ultrasonic (making the diadust modification), makes mixed solution.
4) adding trolamine adjusting pH value is 10, stirs, and is made into suspension.
5) add chemical additive in the suspension, stir, can make high-purity nano diamond polishing liquid.
Embodiment 7:
Getting weight concentration is 1% oxalic acid solution 50g (solid content of oxalic acid is 0.5g), adds 1g purity and be 99.9%, granularity is the diadust of 125nm, fully stir, and ultrasonic 10min, fully wetting, wiring solution-forming, with the solution oven dry, it is standby to grind the back.Getting weight concentration is 1.2%Dispers750W aqueous dispersant 96.3g (water in the solution is the content of water of the present invention), adding weight concentration is 1% sodium silicate solution 1g (water in the solution is the content of water of the present invention), add 1,4 butyleneglycol 1.0g, ultrasonic 5min, add the diadust 1g after oven dry is ground then, mechanical stirring, regulate pH value to 9 with ammoniacal liquor, add polyoxyethylene nonylphenol ether 0.2g, ultrasonic 20min, promptly get high-purity nano diamond polishing liquid, sample normal temperature keeps not sedimentation in 6 months down.
Embodiment 8:
Wetting micro mist process is with example 7.Get weight concentration 5%Dispersbyk-190 aqueous dispersant 96.3g, add glycerine 1.0g, ultrasonic 5min, add the diadust 1.0g after oven dry is ground then, mechanical stirring is regulated pH value to 7 with ammoniacal liquor, adds polyoxyethylene nonylphenol ether 0.2g, ultrasonic 20min promptly gets high-purity nano diamond polishing liquid.
High-purity nano diamond polishing liquid by embodiment 1～8 configuration can be preserved not sedimentation in six months at normal temperatures.
Press the polishing fluid of embodiment 7 preparations, on UNIPOL-810 type precise grinding polisher, silicon single crystal is polished test, surface after the polishing is observed under the fluorescent lamp of 100 power microscopes, 60W and is not drawn and pit, polish results such as Fig. 2 (Fig. 1 does not polish silicon single crystal 100 power microscope figure).Illustrate: a small amount of stain is the inherent defective of silicon single crystal own on Fig. 2.
Claims (7)
1. a high-purity nano diamond polishing liquid is characterized in that it is mainly formed by Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water feedstock production, and the shared weight percent of each raw material is:
Nano diamond: 0.05～10%;
Wetting agent: 0.01～2%;
Surface-modifying agent: 1～5%;
Dispersion agent: 0.1～10%;
Chemical additive: 0.2～1%;
Water: 88.69～98.64%; Each raw material weight per-cent sum is 100%;
Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively; The purity of described Nano diamond is more than 99.9%; Size-grade distribution is 10～200nm.
2. the preparation method of a kind of high-purity nano diamond polishing liquid as claimed in claim 1 is characterized in that it comprises the steps:
1) by the shared weight percent of each raw material be: Nano diamond: 0.05～10%, wetting agent: 0.01～2%, surface-modifying agent: 1～5%, dispersion agent: 0.1～10%, chemical additive: 0.2～1%, water: 88.69～98.64%, each raw material weight per-cent sum is 100%; Choose Nano diamond, wetting agent, surface-modifying agent, dispersion agent, chemical additive and water raw material for standby; Described wetting agent, surface-modifying agent, dispersion agent, chemical additive refer to solid content respectively;
2) get the wetting agent solution that contains above-mentioned wetting agent solid content weight and add in the diadust, stir, ultrasonic 10-30min, abundant wetting diadust, wiring solution-forming, with the solution oven dry, after the grinding, the diadust after wetting, standby;
3) water intaking mixes with dispersion agent, surface-modifying agent, adds in the above-mentioned diadust after wetting ultrasonicly or stir then, makes mixed solution;
4) adding pH value conditioning agent adjusting pH value is 6.5～10, and stirring or ultrasonic is made into suspension;
5) add chemical additive in the suspension, stirring or ultrasonic can make high-purity nano diamond polishing liquid.
3. the preparation method of a kind of high-purity nano diamond polishing liquid according to claim 1 and 2, it is characterized in that: described wetting agent is any one or any mixing more than two kinds in stearic acid, oilstone acid, citric acid, the oxalic acid, any when mixing more than two kinds, be any proportioning.
4. the preparation method of a kind of high-purity nano diamond polishing liquid according to claim 1 and 2, it is characterized in that: described surface-modifying agent is a sodium laurylsulfonate, sodium lauryl sulphate, Sodium hexametaphosphate 99, sodium polyphosphate, water glass, ethanol, ethylene glycol, glycol ether, polyoxyethylene glycol, 1,2 propylene glycol, 1,3 propylene glycol, 1,3 butyleneglycols, 1,4 butyleneglycols, glycerine, silane coupling agent, the aluminate coupling agent, fatty alcohol-polyoxyethylene ether, polyoxyethylene sorbitol, polyoxyethylene fatty acid, polyoxypropylene N.F,USP MANNITOL, the cetyl trimethyl Sodium Bromide, in the dimethyl dodecyl amine oxide any one or any mixing more than two kinds, any when mixing more than two kinds, be any proportioning.
5. the preparation method of a kind of high-purity nano diamond polishing liquid according to claim 1 and 2, it is characterized in that: described dispersion agent is: DisperByk190, RF5040, Solsperse, Disperse750W, Disperse630, Disperse650, SU296, W22, polyvinyl alcohol, polyvinyl alcohol and polystyrene block copolymer, polyoxyethylene polyoxypropylene block type polyethers, poly-two sections multipolymers of carboxyl siloxanes polyoxyethylene glycol, methylcellulose gum, methylcellulose gum contracts, in the ethyl cellulose sodium any one or any mixing more than two kinds, any when mixing more than two kinds, be any proportioning.
6. the preparation method of a kind of high-purity nano diamond polishing liquid according to claim 2, it is characterized in that: described pH regulator agent is any one or any mixing more than two kinds in ammoniacal liquor, sodium hydroxide, thanomin, trolamine, acetate, the oxalic acid, any when mixing more than two kinds, be any proportioning.
7. the preparation method of a kind of high-purity nano diamond polishing liquid according to claim 1 and 2, it is characterized in that: described chemical additive is the mixing of any one or two kinds in polyoxyethylene nonylphenol ether, the fatty alcohol-polyoxyethylene ether, during two kinds of mixing, be any proportioning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100518716A CN101033374A (en) | 2007-04-13 | 2007-04-13 | High-purity nano diamond polishing liquid and preparing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100518716A CN101033374A (en) | 2007-04-13 | 2007-04-13 | High-purity nano diamond polishing liquid and preparing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101033374A true CN101033374A (en) | 2007-09-12 |
Family
ID=38730126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100518716A Pending CN101033374A (en) | 2007-04-13 | 2007-04-13 | High-purity nano diamond polishing liquid and preparing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101033374A (en) |
Cited By (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102504705A (en) * | 2011-10-17 | 2012-06-20 | 刘玉林 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN102513622A (en) * | 2011-11-09 | 2012-06-27 | 扬州大学 | Micro and fine machining method for material difficult to machine and machining system |
| CN103013345A (en) * | 2012-12-21 | 2013-04-03 | 清华大学 | Oily diamond grinding liquid and preparation method thereof |
| CN103045165A (en) * | 2012-11-28 | 2013-04-17 | 大连大友高技术陶瓷有限公司 | Ceramic grinding agent |
| CN103097476A (en) * | 2010-09-08 | 2013-05-08 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| CN103160370A (en) * | 2013-02-08 | 2013-06-19 | 广州大学 | Water base lubrication liquid and preparation method thereof |
| CN103254799A (en) * | 2013-05-29 | 2013-08-21 | 陈玉祥 | Hydrophilic diamond-suspended grinding and polishing solution and preparation method thereof |
| CN103387795A (en) * | 2012-05-11 | 2013-11-13 | 协鑫阿特斯（苏州）光伏科技有限公司 | Polishing paste and silicon ingot polishing method |
| CN103484867A (en) * | 2013-09-23 | 2014-01-01 | 无锡阳工机械制造有限公司 | Metal polishing and corrosion-resistant slurry |
| CN103498158A (en) * | 2013-09-23 | 2014-01-08 | 无锡阳工机械制造有限公司 | Polishing slurry |
| CN103498159A (en) * | 2013-09-23 | 2014-01-08 | 无锡阳工机械制造有限公司 | Polishing slurry |
| CN103897606A (en) * | 2013-11-11 | 2014-07-02 | 东南大学 | High-purity nano-diamond polishing solution and preparation method thereof |
| CN104017499A (en) * | 2014-05-19 | 2014-09-03 | 贵州荣清工具有限公司 | Diamond grinding paste |
| CN104131299A (en) * | 2014-07-01 | 2014-11-05 | 蚌埠天光传感器有限公司 | High-efficiency anticorrosion polishing fluid for stainless steel and preparation method thereof |
| CN104371552A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Applications of silicon-containing organic compound in prolonging of stability of grinding particles in chemical mechanical polishing liquid |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN104526496A (en) * | 2014-12-24 | 2015-04-22 | 常熟市梅李镇亚贸玻璃配件厂 | Novel glass edge polishing technique |
| CN104592936A (en) * | 2015-01-04 | 2015-05-06 | 和县科嘉阀门铸造有限公司 | Nano silicon carbide grinding paste for sealing surface of valve and preparation method of nano silicon dioxide grinding paste |
| CN104650741A (en) * | 2015-01-05 | 2015-05-27 | 杭州大和热磁电子有限公司 | Grinding and polishing paste for high-purity aluminum oxide ceramics |
| CN105524558A (en) * | 2016-01-25 | 2016-04-27 | 河南省联合磨料磨具有限公司 | Polishing solution additive and preparation method thereof |
| WO2016045536A3 (en) * | 2014-09-26 | 2016-05-19 | 河南省联合磨料磨具有限公司 | Method for preparation of diamond polishing film |
| CN105647392A (en) * | 2016-01-29 | 2016-06-08 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel water-based nano carbon crystal polishing solution and preparation method thereof |
| CN105931730A (en) * | 2016-05-20 | 2016-09-07 | 安徽天彩电缆集团有限公司 | Hard seal paste for cable and preparation method for hard seal paste |
| CN106167691A (en) * | 2015-05-19 | 2016-11-30 | 昭和电工株式会社 | Abrasive composition and the Ginding process of this abrasive composition of use |
| CN106346344A (en) * | 2015-07-15 | 2017-01-25 | 宁波江丰电子材料股份有限公司 | Copper target material surface processing method |
| CN106898365A (en) * | 2017-01-21 | 2017-06-27 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Contain head iron core of nanometer diamond alkene and preparation method thereof in a kind of surface |
| CN107892878A (en) * | 2017-10-30 | 2018-04-10 | 阮传华 | A kind of diamond polishing liquid and preparation method thereof |
| CN107949615A (en) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | The Ginding process of lapping liquid, lapping liquid set agent and matrix |
| CN108219678A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of diamond grinding fluid and preparation method thereof |
| WO2018152787A1 (en) * | 2017-02-24 | 2018-08-30 | 深圳先进技术研究院 | Ultra-dispersed nanodiamonds and preparation method therefor |
| CN109054746A (en) * | 2018-08-20 | 2018-12-21 | 深圳市金辉源投资有限公司 | A kind of lapping liquid and application method for steel mold surface mirror surface treatment |
| CN109575813A (en) * | 2018-08-10 | 2019-04-05 | 优尔材料工业（深圳）有限公司 | Micro-nano diamond polishing liquid and preparation method thereof |
| CN109837018A (en) * | 2019-01-28 | 2019-06-04 | 姚晓东 | A kind of preparation method of anti-oxidant removing filth polishing cream |
| CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
| CN112029416A (en) * | 2020-09-02 | 2020-12-04 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
| CN114717561A (en) * | 2022-05-20 | 2022-07-08 | 镇江纳润特高新科技发展有限公司 | Black metal polishing solution containing phosphorus borate and preparation method thereof |
| CN115305013A (en) * | 2022-09-21 | 2022-11-08 | 歌尔光学科技有限公司 | Diamond polishing solution and preparation method thereof |
| CN116589928A (en) * | 2023-05-17 | 2023-08-15 | 耐博检测技术(武汉)有限公司 | Super-dispersed diamond suspension and preparation method thereof |
-
2007
- 2007-04-13 CN CNA2007100518716A patent/CN101033374A/en active Pending
Cited By (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103097476A (en) * | 2010-09-08 | 2013-05-08 | 巴斯夫欧洲公司 | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
| CN103097476B (en) * | 2010-09-08 | 2016-02-17 | 巴斯夫欧洲公司 | Chemically machinery polished is used for moisture polishing composition and the method for the substrate of electronics, machinery and optics |
| CN102504705B (en) * | 2011-10-17 | 2014-07-09 | 河南省化工研究所有限责任公司 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN102504705A (en) * | 2011-10-17 | 2012-06-20 | 刘玉林 | Polishing solution used for precision machining of optical communication ZrO2 ceramic stub and preparation method thereof |
| CN102513622A (en) * | 2011-11-09 | 2012-06-27 | 扬州大学 | Micro and fine machining method for material difficult to machine and machining system |
| CN103387795A (en) * | 2012-05-11 | 2013-11-13 | 协鑫阿特斯（苏州）光伏科技有限公司 | Polishing paste and silicon ingot polishing method |
| CN103387795B (en) * | 2012-05-11 | 2015-04-29 | 协鑫阿特斯（苏州）光伏科技有限公司 | Polishing paste and silicon ingot polishing method |
| CN103045165A (en) * | 2012-11-28 | 2013-04-17 | 大连大友高技术陶瓷有限公司 | Ceramic grinding agent |
| CN103013345A (en) * | 2012-12-21 | 2013-04-03 | 清华大学 | Oily diamond grinding liquid and preparation method thereof |
| CN103013345B (en) * | 2012-12-21 | 2015-02-18 | 清华大学 | Oily diamond grinding liquid and preparation method thereof |
| CN103160370A (en) * | 2013-02-08 | 2013-06-19 | 广州大学 | Water base lubrication liquid and preparation method thereof |
| CN103254799A (en) * | 2013-05-29 | 2013-08-21 | 陈玉祥 | Hydrophilic diamond-suspended grinding and polishing solution and preparation method thereof |
| CN104371552A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Applications of silicon-containing organic compound in prolonging of stability of grinding particles in chemical mechanical polishing liquid |
| CN104371552B (en) * | 2013-08-14 | 2017-09-15 | 安集微电子（上海）有限公司 | Application of the silicon-containing organic compound in extension chemical mechanical polishing liquid in abrasive grains stability |
| CN104371550B (en) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid for being used to polish silicon materials |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN103498159A (en) * | 2013-09-23 | 2014-01-08 | 无锡阳工机械制造有限公司 | Polishing slurry |
| CN103498158A (en) * | 2013-09-23 | 2014-01-08 | 无锡阳工机械制造有限公司 | Polishing slurry |
| CN103484867A (en) * | 2013-09-23 | 2014-01-01 | 无锡阳工机械制造有限公司 | Metal polishing and corrosion-resistant slurry |
| CN103498158B (en) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | A kind of polishing slurries |
| CN103498159B (en) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | A kind of polishing slurries |
| CN103897606A (en) * | 2013-11-11 | 2014-07-02 | 东南大学 | High-purity nano-diamond polishing solution and preparation method thereof |
| CN104017499A (en) * | 2014-05-19 | 2014-09-03 | 贵州荣清工具有限公司 | Diamond grinding paste |
| CN104017499B (en) * | 2014-05-19 | 2015-08-19 | 贵州荣清工具有限公司 | A kind of diamond paste |
| CN104131299A (en) * | 2014-07-01 | 2014-11-05 | 蚌埠天光传感器有限公司 | High-efficiency anticorrosion polishing fluid for stainless steel and preparation method thereof |
| WO2016045536A3 (en) * | 2014-09-26 | 2016-05-19 | 河南省联合磨料磨具有限公司 | Method for preparation of diamond polishing film |
| CN104526496A (en) * | 2014-12-24 | 2015-04-22 | 常熟市梅李镇亚贸玻璃配件厂 | Novel glass edge polishing technique |
| CN104592936A (en) * | 2015-01-04 | 2015-05-06 | 和县科嘉阀门铸造有限公司 | Nano silicon carbide grinding paste for sealing surface of valve and preparation method of nano silicon dioxide grinding paste |
| CN104650741A (en) * | 2015-01-05 | 2015-05-27 | 杭州大和热磁电子有限公司 | Grinding and polishing paste for high-purity aluminum oxide ceramics |
| CN106167691B (en) * | 2015-05-19 | 2018-07-13 | 昭和电工株式会社 | Abrasive composition and the grinding method for using the abrasive composition |
| CN106167691A (en) * | 2015-05-19 | 2016-11-30 | 昭和电工株式会社 | Abrasive composition and the Ginding process of this abrasive composition of use |
| CN106346344A (en) * | 2015-07-15 | 2017-01-25 | 宁波江丰电子材料股份有限公司 | Copper target material surface processing method |
| US11046869B2 (en) | 2015-09-09 | 2021-06-29 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and substrate polishing method |
| CN107949615A (en) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | The Ginding process of lapping liquid, lapping liquid set agent and matrix |
| CN107949615B (en) * | 2015-09-09 | 2023-08-04 | 株式会社力森诺科 | Polishing liquid, polishing liquid set and method for polishing substrate |
| CN105524558B (en) * | 2016-01-25 | 2018-02-09 | 河南联合精密材料股份有限公司 | One kind polishing solution additive and preparation method thereof |
| CN105524558A (en) * | 2016-01-25 | 2016-04-27 | 河南省联合磨料磨具有限公司 | Polishing solution additive and preparation method thereof |
| CN105647392A (en) * | 2016-01-29 | 2016-06-08 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Novel water-based nano carbon crystal polishing solution and preparation method thereof |
| CN105931730A (en) * | 2016-05-20 | 2016-09-07 | 安徽天彩电缆集团有限公司 | Hard seal paste for cable and preparation method for hard seal paste |
| CN108219678B (en) * | 2016-12-21 | 2020-09-04 | 蓝思科技（长沙）有限公司 | Diamond grinding fluid and preparation method thereof |
| CN108219678A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of diamond grinding fluid and preparation method thereof |
| CN106898365A (en) * | 2017-01-21 | 2017-06-27 | 郑州人造金刚石及制品工程技术研究中心有限公司 | Contain head iron core of nanometer diamond alkene and preparation method thereof in a kind of surface |
| WO2018152787A1 (en) * | 2017-02-24 | 2018-08-30 | 深圳先进技术研究院 | Ultra-dispersed nanodiamonds and preparation method therefor |
| CN107892878A (en) * | 2017-10-30 | 2018-04-10 | 阮传华 | A kind of diamond polishing liquid and preparation method thereof |
| CN109575813A (en) * | 2018-08-10 | 2019-04-05 | 优尔材料工业（深圳）有限公司 | Micro-nano diamond polishing liquid and preparation method thereof |
| CN109054746B (en) * | 2018-08-20 | 2020-11-03 | 深圳市金辉源投资有限公司 | Grinding fluid for mirror surface treatment of steel die surface and use method |
| CN109054746A (en) * | 2018-08-20 | 2018-12-21 | 深圳市金辉源投资有限公司 | A kind of lapping liquid and application method for steel mold surface mirror surface treatment |
| CN109837018A (en) * | 2019-01-28 | 2019-06-04 | 姚晓东 | A kind of preparation method of anti-oxidant removing filth polishing cream |
| CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
| CN112029416A (en) * | 2020-09-02 | 2020-12-04 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
| CN112029416B (en) * | 2020-09-02 | 2022-06-03 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
| CN114717561A (en) * | 2022-05-20 | 2022-07-08 | 镇江纳润特高新科技发展有限公司 | Black metal polishing solution containing phosphorus borate and preparation method thereof |
| CN115305013A (en) * | 2022-09-21 | 2022-11-08 | 歌尔光学科技有限公司 | Diamond polishing solution and preparation method thereof |
| CN115305013B (en) * | 2022-09-21 | 2023-11-21 | 歌尔光学科技有限公司 | Diamond polishing solution and preparation method thereof |
| CN116589928A (en) * | 2023-05-17 | 2023-08-15 | 耐博检测技术(武汉)有限公司 | Super-dispersed diamond suspension and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101033374A (en) | High-purity nano diamond polishing liquid and preparing method thereof | |
| CN1288920A (en) | Polishing composition | |
| CN1282226C (en) | Cerium oxide abrasive and method of abrading substrates | |
| CN1168794C (en) | Composition for oxide CMP | |
| CN1240798C (en) | Use of polishing composition and method for polishing storage hard disc | |
| CN100337925C (en) | Crytalline ceric oxide sol and making method thereof | |
| CN1122093C (en) | Polishing composition used for manufacturing storage hard disk and polishing method | |
| CN1230486C (en) | Cerium oxide slurry, and method of mfg. substrate | |
| CN110591565B (en) | Alumina polishing solution for sapphire polishing and preparation method thereof | |
| CN1197930C (en) | Polishing fluid composition | |
| CN1253963A (en) | Grinding composite and potching composite | |
| CN1821339A (en) | Abrasive, method of polishing target member and process for producing semiconductor device | |
| CN1667026A (en) | Polishing slurry, method of producing same, and method of polishing substrate | |
| CN1896172A (en) | Slurry for cmp and method of fabricating the same and method of polishing substrate | |
| RU2620836C2 (en) | Polishing composition | |
| CN106349948B (en) | A kind of preparation method of nanometer burnishing liquid | |
| CN109135580A (en) | A kind of glass polishing fluid and preparation method thereof | |
| CN1422922A (en) | Polishing composition of magnetic disk substrate and polishing method using said composition | |
| CN103571333A (en) | CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof | |
| CN105733507A (en) | Preparation method of shell-core coated cerium oxide-silicon oxide composite abrasive grains | |
| CN1826684A (en) | Method for polishing wafer | |
| CN1818002A (en) | Abrasive particles, polishing slurry, and producing method thereof | |
| CN111548737A (en) | Diamond grinding fluid and preparation method thereof | |
| CN114231182A (en) | Easy-to-cleave gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof | |
| CN1944496A (en) | Polishing slurry, method of producing same, and method of polishing substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |