CN111995983A - Preparation method of grinding fluid for processing semiconductor wafer - Google Patents
Preparation method of grinding fluid for processing semiconductor wafer Download PDFInfo
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- CN111995983A CN111995983A CN202010907453.8A CN202010907453A CN111995983A CN 111995983 A CN111995983 A CN 111995983A CN 202010907453 A CN202010907453 A CN 202010907453A CN 111995983 A CN111995983 A CN 111995983A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a preparation method of grinding fluid for processing a semiconductor wafer, and relates to the technical field of grinding and polishing processing of hard and brittle materials. The invention discloses a preparation method of grinding fluid for processing a semiconductor wafer, which comprises the following specific steps: sequentially adding a thickening agent, a wetting agent, a coupling agent, a dispersing agent, a lubricating agent and a defoaming agent into a solvent, uniformly stirring, adding deionized water, uniformly stirring to form uniform fluid, then adding a solid grinding material, and stirring until a stable and uniform suspension system is formed. The grinding fluid prepared by the invention has stable suspension performance, the grinding agent is not easy to sink in the processing process, and the grinding fluid can be repeatedly recycled for multiple times; the fluidity is good, the caking phenomenon can not occur, and the blockage of the infusion pipeline is avoided; the surface wettability and the dispersibility are good, the grinding fluid is uniformly distributed in the processing process, the processing interface is prevented from being scratched, and the processing yield is improved; easy to clean, avoids introducing impurities in the subsequent processing process, has high grinding removal rate and improves the processing efficiency.
Description
Technical Field
The invention belongs to the technical field of grinding and polishing processing of hard and brittle materials, and particularly relates to grinding fluid for processing a semiconductor wafer and a preparation method thereof.
Background
In recent years, along with the rapid development of economy in China, electronic products such as mobile communication and the like rise, the market of intelligent commodities is increased explosively, and particularly, the demand for various semiconductor materials is increased continuously when the age of 5G comes. For example, monocrystalline silicon can be used for computer chips, polycrystalline silicon can be used for solar cells, gallium arsenide, indium phosphide and the like can be used for integrated circuits, and monocrystalline alumina can be used for display screens and the like. Semiconductor materials are processed prior to their use, and polishing fluids play a critical role in the polishing process of semiconductors.
In the processing process of the semiconductor wafer, the grinding liquid can uniformly disperse the grinding materials, so that the processing efficiency is improved, and meanwhile, the effects of lubricating and cooling and ensuring subsequent easy cleaning are achieved, and the surface quality of the wafer is ensured in the processing process of the wafer. At present, the grinding fluid in the processing process of semiconductor materials is mainly prepared by taking large-particle boron carbide, silicon carbide and the like as grinding agents, adding a certain amount of dispersing agents and surfactants, and diluting and proportioning by water. The grinding agent has the advantages of poor suspension performance, easy precipitation of the grinding agent, insufficient stability, uneven dispersion, great influence on the surface quality of a semiconductor wafer, low yield, short cycle service life and high processing cost. Under the pressure of the harsh requirements on the processing precision of semiconductor wafers, some enterprises currently use imported products in the united states: the AQUALAP TTV polishing liquid is used for polishing and removing the thickness of a high-quality semiconductor wafer. However, the product is very expensive, so that the wafer processing cost is high, and on the other hand, the product cannot be adjusted according to the market characteristics of China and the requirements of specific processing parameters due to technical monopoly.
Based on part of defects of the grinding fluid, the grinding fluid for processing the semiconductor wafer is developed, the grinding effect is ensured, the suspension stability is enhanced, the cycle service life is prolonged, the distribution is uniform in the processing process, the processing yield is improved, and the monopoly of foreign technologies in the field is broken.
Disclosure of Invention
The invention aims to provide a preparation method of a grinding fluid for processing a semiconductor wafer, the grinding fluid prepared by the preparation method has stable suspension property, can be recycled for multiple times, has good fluidity, excellent surface wettability and dispersibility, is easy to clean, and improves the processing yield and the processing efficiency of the semiconductor wafer.
In order to achieve the purpose of the invention, the invention provides a preparation method of a grinding fluid for processing a semiconductor wafer, which comprises the following specific steps:
(1) sequentially adding a thickening agent, a wetting agent and a coupling agent into a solvent, controlling the stirring speed to be 300-700 r/min and the temperature to be 25-35 ℃, and uniformly stirring;
(2) sequentially adding a dispersing agent, a lubricating agent and a defoaming agent into a solvent, controlling the stirring speed at 300-700 rpm and the temperature at 25-35 ℃, and uniformly stirring;
(3) adding the solution obtained in the step (1) into the solution obtained in the step (2), controlling the stirring speed to be 300-700 rpm and the temperature to be 25-35 ℃, uniformly stirring, adding deionized water, controlling the stirring speed to be 500-800 rpm, and uniformly stirring to form a uniform fluid;
(4) and (4) adding the solid abrasive into the solution obtained in the step (3), and controlling the stirring rotating speed until the solid abrasive is uniformly dispersed in the solution to form a stable and uniform suspension system, namely the required grinding fluid.
Further, the grinding fluid comprises the following components in percentage by weight: 20-30% of solid abrasive, 10-20% of thickening agent, 3-10% of dispersing agent, 3-10% of wetting agent, 3-10% of lubricating agent, 10-30% of coupling agent, 1-3% of defoaming agent, 10-50% of solvent and the balance of deionized water.
Further, the solid abrasive is one or more of diamond, boron carbide, silicon carbide, aluminum oxide, chromium oxide and cerium oxide.
Further, the thickening agent is one or more of associated polyurethane, xanthan gum, agar, polyvinylpyrrolidone, silica gel, polyacrylamide, polyacrylic acid and polyacrylate copolymer.
Further, the dispersing agent is one or more of fatty alcohol-polyoxyethylene ether, C10-14 alcohol polyoxyethylene ether, dioctyl sodium sulfosuccinate, C14-16 alkene sodium sulfonate, an ethylene-acrylic acid copolymer and an ethylene-vinyl acetate copolymer.
Further, the wetting agent is one or more of acetylene glycol ethoxy compound, dodecenyl alcohol polyether, polyether modified dimethyl siloxane and fluorinated fatty alcohol-polyoxyethylene ether.
Further, the lubricant is a water-soluble lubricant, and mainly refers to one or more of polyoxyethylene esters or ammonium salts of lauric acid, oleic acid, isononanoic acid and the like containing long carbon chain alkyl groups in the molecular structure.
Further, the coupling agent is one or more of vinyl trichlorosilane, vinyl trimethoxy silane, vinyl methyl dichlorosilane and chloromethyl triethoxysilane.
Further, the defoaming agent is one or more of polyether modified silicon-containing defoaming agent, high-carbon alcohol defoaming agent and organic silicon defoaming agent.
Further, the solvent is one or a combination of ethylene glycol, diethylene glycol, glycerol and azomethylpyrrolidone.
The invention achieves the following beneficial effects:
1. the grinding fluid prepared by the invention has stable suspension performance, is not easy to sink in the processing process of a semiconductor wafer, and can be repeatedly recycled for multiple times.
2. The grinding fluid prepared by the invention has good fluidity, does not have the caking phenomenon, and avoids blocking a transfusion pipeline.
3. The grinding fluid prepared by the invention has excellent surface wettability and dispersibility, is uniformly distributed in the process of processing the semiconductor wafer, avoids the scratch of a processing interface and improves the processing yield of the semiconductor wafer.
4. After the grinding processing of the semiconductor wafer is finished, the grinding liquid is easy to clean, so that impurities are prevented from being introduced into the subsequent processing process, meanwhile, the grinding removal rate under the same condition is high, the processing efficiency of the semiconductor wafer is improved, and the monopoly of foreign technologies in the field is broken.
Drawings
The drawings described herein are for purposes of providing a further understanding of the embodiments of the invention, are used to explain the invention and are not to be construed as limiting the invention.
FIG. 1 is a graph showing the results of the suspension property test in example 1 of the present invention;
FIG. 2 is a graph showing the results of the suspension performance test in example 2 of the present invention;
FIG. 3 is a graph showing the results of the suspension property test in example 3 of the present invention;
FIG. 4 is a graph showing the results of suspension testing of a sample of the abrasive fluid;
FIG. 5 is a graph showing the results of the leveling test in example 1 of the present invention;
FIG. 6 is a graph showing the results of the leveling test in example 2 of the present invention;
FIG. 7 is a graph showing the results of the leveling test in example 3 of the present invention;
fig. 8 is a graph showing the results of the leveling test of the polishing slurry samples.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The effects of the present invention and the production process thereof will be described below with reference to specific examples.
Example 1
A preparation method of grinding fluid for processing a semiconductor wafer specifically comprises the following steps:
(1) sequentially adding a thickening agent, a wetting agent and a coupling agent into a solvent, controlling the stirring speed at 300-700 r/min and the temperature at 25-35 ℃, and uniformly stirring, wherein the solvent is diethylene glycol.
(2) And (2) adding the dispersing agent, the lubricating agent and the defoaming agent into the solvent in sequence, controlling the stirring speed at 300-700 r/min and the temperature at 25-35 ℃, and uniformly stirring, wherein the solvent is the nitrogen methyl pyrrolidone.
(3) And (3) adding the solution obtained in the step (1) into the solution obtained in the step (2), controlling the stirring speed to be 300-700 rpm and the temperature to be 25-35 ℃, uniformly stirring, adding deionized water, controlling the stirring speed to be 500-800 rpm, and uniformly stirring to form a uniform fluid.
(4) And (4) adding the solid abrasive into the solution obtained in the step (3), and controlling the stirring rotating speed until the solid abrasive is uniformly dispersed in the solution to form a stable and uniform suspension system for later use. The suspension system can select different types of solid grinding materials according to the actual grinding processing requirements to meet the requirements of material processing precision.
The preparation method of the grinding fluid needs to strictly control the stirring speed and temperature, and the grinding fluid is used within 24 hours after the preparation is finished.
The grinding fluid for processing the semiconductor wafer comprises the following components in percentage by weight: 20% of solid abrasive, 12% of thickening agent, 4% of dispersing agent, 3% of wetting agent, 4% of lubricating agent, 10% of coupling agent, 1% of defoaming agent, 15% of solvent diethylene glycol and 15% of N-methyl pyrrolidone, and the balance of deionized water. The solid abrasive is boron carbide, the thickening agent is xanthan gum, the dispersing agent is fatty alcohol-polyoxyethylene ether, the wetting agent is an acetylenic diol ethoxy compound, the lubricant is lauric acid polyether ester containing long-carbon-chain alkyl, the coupling agent is vinyl methyl dichlorosilane, the defoaming agent is a high-carbon alcohol defoaming agent, and the solvent is diethylene glycol and N-methyl pyrrolidone.
Example 2
The preparation method of the grinding fluid for processing the semiconductor wafer is the same as that in the embodiment 1, the concrete steps refer to the embodiment 1, the stirring rotating speed and the temperature are strictly controlled, and the grinding fluid is used within 24 hours after the preparation is finished. Except that the solvent in the step (1) is diethylene glycol, and the solvent in the step (2) is glycerol.
The grinding fluid for processing the semiconductor wafer comprises the following components in percentage by weight: 22% of solid abrasive, 11% of thickening agent, 5% of dispersing agent, 5% of wetting agent, 4% of lubricating agent, 10% of coupling agent, 1.5% of defoaming agent, 15% of solvent diethylene glycol, 20% of glycerol and the balance of deionized water. The solid abrasive is boron carbide, the thickening agent is 5% of polyvinylpyrrolidone and 6% of polyacrylamide, the dispersing agent is ethylene-vinyl acetate copolymer, the wetting agent is dodecenyl alcohol polyether, the lubricating agent is triethanolamine isononanoate containing long-carbon chain alkyl, the coupling agent is vinyl trimethoxy silane, the defoaming agent is organosilicon defoaming agent, and the solvent is diethylene glycol and glycerol.
Example 3
The preparation method of the grinding fluid for processing the semiconductor wafer is the same as that in the embodiment 1, the concrete steps refer to the embodiment 1, the stirring rotating speed and the temperature are strictly controlled, and the grinding fluid is used within 24 hours after the preparation is finished. Except that the solvent in the step (1) is ethylene glycol, and the solvent in the step (2) is N-methylpyrrolidone.
The grinding fluid for processing the semiconductor wafer comprises the following components in percentage by weight: 25% of solid abrasive, 10% of thickening agent, 5% of dispersing agent, 6% of wetting agent, 4% of lubricating agent, 12% of coupling agent, 1.5% of defoaming agent, 20% of solvent ethylene glycol, 15% of N-methyl pyrrolidone and the balance of deionized water. The solid abrasive is boron carbide, the thickening agent is polyvinylpyrrolidone and polyacrylamide, the dispersing agent is ethylene-vinyl acetate copolymer, the wetting agent is fluorinated fatty alcohol polyoxyethylene ether, the lubricant is monthly silicic acid polyoxyethylene ester containing long carbon chain alkyl groups, the coupling agent is methyl trimethoxy silane, the defoaming agent is organosilicon defoaming agent, and the solvent is ethylene glycol and N-methyl pyrrolidone.
The following table-1 shows various technical indexes of the polishing slurry obtained in examples 1 to 3 compared with a commercially available polishing slurry product.
TABLE-1 examples 1 to 3 and results of testing technical indexes of polishing slurry samples
The above table-1 shows that the kinematic viscosity of the polishing slurry obtained in examples 1 to 3 is lower than that of the polishing slurry sample, and the fluidity of the polishing slurry can be ensured in the process of polishing a hard and brittle material; the friction coefficient of the grinding fluid is smaller than that of a grinding fluid sample, so that the grinding fluid has better lubricating property and can reduce scratches on the surface of a material in the processing process.
As can be seen from fig. 1 to 4, the suspension performance of examples 1 to 3 is better than that of the polishing slurry sample, and the sinking of the polishing slurry during the processing process can be reduced, thereby improving the processing efficiency.
FIGS. 5 to 8 are simulation studies on the surface smoothness and the planar spreading of the polishing slurry obtained in examples 1 to 3 and the samples of the polishing slurry.
As can be seen from the comparison of FIGS. 5 to 8, compared with the polishing slurry samples, the polishing slurries for semiconductor wafer processing according to embodiments 1 to 3 of the present invention have good leveling property and excellent spreading property, and can ensure uniform contact between the processing interface and the polishing slurry during the processing of the material, thereby improving the quality of the processed surface.
The technical features of the embodiments described above can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (10)
1. A preparation method of grinding fluid for processing a semiconductor wafer is characterized by comprising the following specific steps:
(1) sequentially adding a thickening agent, a wetting agent and a coupling agent into a solvent, controlling the stirring speed to be 300-700 r/min and the temperature to be 25-35 ℃, and uniformly stirring;
(2) sequentially adding a dispersing agent, a lubricating agent and a defoaming agent into a solvent, controlling the stirring speed at 300-700 rpm and the temperature at 25-35 ℃, and uniformly stirring;
(3) adding the solution obtained in the step (1) into the solution obtained in the step (2), controlling the stirring speed to be 300-700 rpm and the temperature to be 25-35 ℃, uniformly stirring, adding deionized water, controlling the stirring speed to be 500-800 rpm, and uniformly stirring to form a uniform fluid;
(4) and (4) adding the solid abrasive into the solution obtained in the step (3), and controlling the stirring rotating speed until the solid abrasive is uniformly dispersed in the solution to form a stable and uniform suspension system, namely the required grinding fluid.
2. The method of claim 1, wherein the polishing slurry comprises the following components in percentage by weight: 20-30% of solid abrasive, 10-20% of thickening agent, 3-10% of dispersing agent, 3-10% of wetting agent, 3-10% of lubricating agent, 10-30% of coupling agent, 1-3% of defoaming agent, 10-50% of solvent and the balance of deionized water.
3. The method for preparing the grinding fluid for processing the semiconductor wafer as claimed in claim 1, wherein the solid abrasive is one or more of diamond, boron carbide, silicon carbide, aluminum oxide, chromium oxide and cerium oxide.
4. The method of claim 1, wherein the thickener is one or more selected from the group consisting of associative polyurethane, xanthan gum, agar, polypyrrolidone, silicone gel, polyacrylamide, polyacrylic acid, and polyacrylate copolymer.
5. The method of claim 1, wherein the dispersant is fatty alcohol-polyoxyethylene ether, C10～14Alcohol polyoxyethylene ether, dioctyl sulfosuccinate monosodium salt and C14～16One or more of sodium olefin sulfonate, ethylene-acrylic acid copolymer and ethylene-vinyl acetate copolymer.
6. The method as claimed in claim 1, wherein the wetting agent is one or more selected from acetylene glycol ethoxylate, dodecenyl alcohol polyether, polyether modified dimethyl siloxane, and fluorinated fatty alcohol-polyoxyethylene ether.
7. The method of claim 1, wherein the lubricant is a water-soluble lubricant, and mainly comprises one or more of polyoxyethylene esters or ammonium salts of lauric acid, oleic acid, isononanoic acid, and the like, having a long carbon chain alkyl group in a molecular structure.
8. The method as claimed in claim 1, wherein the coupling agent is one or more selected from vinyltrichlorosilane, vinyltrimethoxysilane, vinylmethyldichlorosilane and chloromethyltriethoxysilane.
9. The method of claim 1, wherein the defoaming agent is one or more of a polyether-modified silicon-containing defoaming agent, a higher alcohol defoaming agent, and a silicone defoaming agent.
10. The method as claimed in claim 1, wherein the solvent is one or more selected from ethylene glycol, diethylene glycol, glycerol, and azomethine pyrrolidone.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115181545A (en) * | 2022-07-22 | 2022-10-14 | 福建省佑达环保材料有限公司 | Suspension for semiconductor manufacturing process |
| CN116042099A (en) * | 2023-02-14 | 2023-05-02 | 大连奥首科技有限公司 | Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115181545A (en) * | 2022-07-22 | 2022-10-14 | 福建省佑达环保材料有限公司 | Suspension for semiconductor manufacturing process |
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| CN116042099A (en) * | 2023-02-14 | 2023-05-02 | 大连奥首科技有限公司 | Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid |
| CN116042099B (en) * | 2023-02-14 | 2024-04-09 | 大连奥首科技有限公司 | Grinding aid with high wettability, high dispersion, high suspension and easy cleaning, preparation method and application thereof, and grinding fluid containing grinding aid |
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Application publication date: 20201127 |