CN105038607A - Effective sapphire fine grinding method and fine grinding solution - Google Patents

Effective sapphire fine grinding method and fine grinding solution Download PDF

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Publication number
CN105038607A
CN105038607A CN201510337637.4A CN201510337637A CN105038607A CN 105038607 A CN105038607 A CN 105038607A CN 201510337637 A CN201510337637 A CN 201510337637A CN 105038607 A CN105038607 A CN 105038607A
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Prior art keywords
fine grinding
sapphire
fine
grinding fluid
grinding
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CN201510337637.4A
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CN105038607B (en
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朱联烽
田多胜
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Dongguan Zhongwei Lihe Semiconductor Technology Co ltd
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Dongguan Zhongwei Nano Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention relates to the technical field of sapphire grinding and polishing, in particular to a fine grinding solution for sapphire grinding. The fine grinding solution comprises the following components in percentage by weight: 10-15% of superfine high-hardness micro powder, 0.1-1.5% of a dispersing agent, 1-5% of a powder lubricant and the balance of deionized water, wherein the powder lubricant is graphite or hexagonal boron nitride. Through the adoption of the dispersing agent, micro powder can form a stable suspension system, so that flowing and transmission of the micro powder are facilitated, and a sol system has excellent permeation and cleaning functions to take fines generated in the grinding process away in a fluidal manner; aiming at the problem of the short service life, the powder lubricant is added in the fine grinding solution, so that a grinding contact surface has a sliding buffering effect, the powder can roll under the high pressure to prevent the superfine high-hardness micro powder from being in contact with a sapphire crystal surface and damaging a grinding material, and the service life of the fine grinding solution is prolonged; the invention further provides an efficient sapphire fine grinding method.

Description

Efficient sapphire methods of refining and fine grinding fluid
Technical field
The present invention relates to sapphire grinding and polishing technical field, especially for the fine grinding fluid of sapphire grinding, and adopt the efficient sapphire methods of refining of this fine grinding fluid.
Background technology
Sapphire is a kind of composition is a-Al 2o 3monocrystalline, its inertia is strong, have good light transmission and thermal conductivity, and Mohs' hardness, up to 9, is only second to the diamond that Mohs' hardness is 10.0, is a kind of excellent high-abrasive material.Due to these technical characteristics, it is widely used in the first-selected substrate material of LED.In recent years, well-known mobile-phone manufacturers Apple proposes with the scheme of sapphire single-crystal as Mobile phone screen, although cannot use in a large number due to the prematurity of sapphire screen production technology, this concept has led smart mobile phone manufacturers to swarm and caught up with.
Polishing efficiency is low is the one of the main reasons that sapphire screen productive rate is little.Generally sapphire is divided into grinding, copper throwing and Jing Paosange workshop section.Because wafer surface roughness is comparatively large after copper throwing art breading, in essence throwing process, often need process within 2 ~ 4 hours, just can reach target roughness (Ra) and minimum thickness difference (TTV).The Jing Pao workshop section of sapphire wafer consumes the plenty of time.The high rigidity micro mist that general industry Nei Tongpao workshop section uses has many, and such as specifications and models are the boron carbide micro powder of W10, W7 and W5, and median D50 is respectively 6.1 ~ 8.3um, 5.0 ~ 6.0um and 3.5 ~ 4.2um; Also or specifications and models be the diadust of W2.5 and W3.5, median D50 is 1.6 ~ 1.8um and 2.2 ~ 3.0um.Above-mentioned micro mist is coordinated appropriate deionized water and suspension agent, makes lapping liquid, input in shredder and sapphire is ground.
In general, the high rigidity micro mist less with particle diameter grinds sapphire, and the surfaceness of acquisition is less, is more beneficial to the treatment time of reduction Jing Pao workshop section.In industry, also someone attempts the less abrasive sand of use particle diameter, obtains more excellent crystal plane surface quality to simplify follow-up glossing.But particle diameter is less, the cutting dynamics of micro mist is less, and cost of supplementary product is higher, causes that the capacity efficiency of complete processing is low and cost is high.The lapping liquid of some small particle size micro mist preparation, stock-removing efficiency even throws liquid lower than the silicon solization of Jing Pao workshop section.In addition, the work-ing life of small particle size abrasive material is very short, often recycles 7 ~ 8 dish wafers and just loses grinding effect.In a word, mill efficiency these two fatal problem short in low and work-ing life limit the use of ultra-fine micropowder in Tong Pao workshop section.
Due to the restriction of the problems referred to above, in Tong Pao workshop section, in upper one workshop section of chemical Jing Pao workshop section in other words, abandon in current industry using specification particle diameter at the exceptional hardness micro mist of below W2.4 (median D50 < 1.8um) as mechanical mill material.The exceptional hardness micro mist of this particle size range is used still to belong to blank in the inherent Tong Pao workshop section of industry.
Summary of the invention
The present invention, in order to solve at present in sapphire Tong Pao workshop section, uses the problem that mill efficiency is low, work-ing life is short that the lapping liquid of ultra-fine micropowder configuration exists and a kind of fine grinding fluid provided.
For reaching above-mentioned functions, technical scheme provided by the invention is:
A kind of fine grinding fluid, described fine grinding fluid is composed of the following components:
Ultra-fine high rigidity micro mist: 10 ~ 15wt%;
Dispersion agent: 0.1 ~ 1.5wt%;
Powder lubricant: 1 ~ 5wt%;
Surplus is deionized water;
Described powder lubricant is graphite or hexagonal boron nitride.
Preferably, described dispersion agent is one or more in Xylo-Mucine, sodium polyacrylate, glycerol, propylene glycol, Sodium dodecylbenzene sulfonate, tetradecyl benzene sulfonic acid sodium salt, cetyl benzenesulfonic acid sodium, dodecyl sodium naphthalene sulfonate, tetradecyl sodium naphthalene sulfonate, trolamine, boric acid ester.
Preferably, described ultra-fine high rigidity micro mist is norbide or silicon carbide.
Preferably, the median D50 of described ultra-fine high rigidity micro mist is 0.2 ~ 1.6 μm.
Preferably, the median D50 of described powder lubricant is 0.1 ~ 1 μm.
The present invention additionally provides a kind of efficient sapphire methods of refining simultaneously, uses above-mentioned fine grinding fluid to carry out fine grinding to sapphire.
Beneficial effect of the present invention is: for the low cutting force problem of existing ultra-fine micropowder, the present invention uses dispersion agent, micro mist is made to form stable suspension system, be beneficial to flowing and the transmission of micro mist, make sol system have excellent infiltration and cleaning function, the fines produced in process of lapping is taken away with the form of fluid; For the problem in low life-span, the present invention is mixed into powder lubricant in fine grinding fluid, makes grinding contact surface have slip cushioning effect, powder is rolled at elevated pressures, avoid ultra-fine high rigidity micro mist to form hard contact with sapphire crystal face, damage abrasive material, thus improve the work-ing life of fine grinding fluid.
Embodiment
One, fill a prescription
In the present embodiment, sapphire fine grinding fluid comprises ultra-fine high rigidity micro mist, powder lubricant, dispersion agent and deionized water.Wherein, ultra-fine high rigidity micro mist is as the preferred norbide of abrasive material of fine grinding fluid, and particle diameter is preferably the micro mist of W2.4, W1.5 and W0.5 standard, and namely median D50 is respectively 1.6 ~ 1.8um, 0.5 ~ 0.6um and 1.1 ~ 1.3um.Be configured by table 1 list formula.
Table 1. fine grinding fluid formula provided by the invention
Two, Ginding process
Fine grinding fluid uses with former state, without the need to adding water or the aqueous solution dilutes.Fine grinding fluid is transferred in shredder, make abrasive disk and polished surface contact, polished surface and abrasive disk relative movement.The export mouth of fine grinding fluid is connected with introducing port, and fine grinding fluid circulation carries out ground finish to wafer repeatedly.
Three, experiment condition
Grinding plant: 18B shredder;
Sapphire wafer diameter: Ф=5cm;
Sapphire type: A is to the smooth sapphire of, crystal face light;
Grinding pressure: 90g/cm 2;
Head rotating speed: 20rpm.
Four, test set
Roughness: roughness tester;
Thickness: knob milscale.
Five, evaluate:
The lower size speed of grinding is evaluated:
Lower size speed=(wafer thickness after the wafer thickness-grinding before the grinding)/milling time of grinding;
Roughness is evaluated: surface roughness Ra.
The typical consequence of sapphire wafer is coiled in table 2. different ingredients process first
The typical consequence of sapphire wafer is coiled in table 3. norbide water mortar process first
Table 2 lists the typical process result value of the fine grinding fluid of the boron carbide micro powder preparation of different-grain diameter.Often coil sample processing time and be 30min.For the exemplary value of the Z-W1.5 that fills a prescription, process half an hour, under wafer, dimensional values is 5.1um, and wafer surface roughness Ra value is 16nm.Obtain the wafer surface that quality is better.For lower one Jing Pao workshop section saves the treatment time.
Table 3 illustrates the exemplary process parameter of norbide water mortar, and the present embodiment formulation efficacy provided with table 2 contrasts.Use norbide and the directly formulated water mortar of deionized water, substantially do not cut dynamics.In addition, because the suspension effect of water mortar is poor, lapping liquid stagnates in equipment, easily forms local and reunites, the roughness of part sapphire wafer is increased.Six, life appraisal
With this formula process sapphire, for typical Z-W1.5, after process 20 dish sapphire, still more than 0.1um/min can be remained on.By contrast, W1.5 norbide water mortar is after processing 5 dishes, and rate of cutting is down to below 0.03um/min, substantially without cutting dynamics.
Life span comparison's ([mu) of table 4. different ingredients process sapphire wafer
Life span comparison's ([mu) of the water mortar process sapphire wafer of table 5. different-grain diameter preparation
The above embodiment, just preferred embodiments of the present invention, be not limit practical range of the present invention, therefore all equivalences done according to structure, feature and the principle described in the present patent application the scope of the claims change or modify, and all should be included in patent claim of the present invention.

Claims (6)

1. a fine grinding fluid, is characterized in that: described fine grinding fluid is composed of the following components:
Ultra-fine high rigidity micro mist: 10 ~ 15wt%;
Dispersion agent: 0.1 ~ 1.5wt%;
Powder lubricant: 1 ~ 5wt%;
Surplus is deionized water;
Described powder lubricant is graphite or hexagonal boron nitride.
2. fine grinding fluid as claimed in claim 1, is characterized in that: described dispersion agent is one or more in Xylo-Mucine, sodium polyacrylate, glycerol, propylene glycol, Sodium dodecylbenzene sulfonate, tetradecyl benzene sulfonic acid sodium salt, cetyl benzenesulfonic acid sodium, dodecyl sodium naphthalene sulfonate, tetradecyl sodium naphthalene sulfonate, trolamine, boric acid ester.
3. fine grinding fluid as claimed in claim 1, is characterized in that: described ultra-fine high rigidity micro mist is norbide or silicon carbide.
4. fine grinding fluid as claimed in claim 1, is characterized in that: the median D50 of described ultra-fine high rigidity micro mist is 0.2 ~ 1.6 μm.
5. fine grinding fluid as claimed in claim 1, is characterized in that: the median D50 of described powder lubricant is 0.1 ~ 1 μm.
6. an efficient sapphire methods of refining, is characterized in that: use the fine grinding fluid described in claim 1 to 5 any one to carry out fine grinding to sapphire.
CN201510337637.4A 2015-06-16 2015-06-16 Efficient sapphire methods of refining and fine grinding fluid Active CN105038607B (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106271900A (en) * 2016-08-31 2017-01-04 天通银厦新材料有限公司 A kind of sapphire glossing
CN106271956A (en) * 2016-08-15 2017-01-04 安徽省银锐玻璃机械有限公司 Complex liquid for glass edging
CN106863025A (en) * 2017-03-28 2017-06-20 江苏吉星新材料有限公司 A kind of 2 inch, 4 inch Sapphire Substrate defect on back side Repair gene methods
CN107057641A (en) * 2016-12-31 2017-08-18 东莞市淦宏信息科技有限公司 A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass
CN108192505A (en) * 2018-02-01 2018-06-22 湖南有色金属职业技术学院 A kind of silicon substrate A is to sapphire polishing liquid and preparation method thereof
CN108276003A (en) * 2018-02-13 2018-07-13 苏州纳朴材料科技有限公司 A method of preparing boron carbide complex phase ceramic using sapphire grinding dead meal
CN110340785A (en) * 2019-07-29 2019-10-18 佛山市建信塑料制品有限公司 A kind of cosmetic packaging bottle production line and production method
CN110484207A (en) * 2019-09-20 2019-11-22 江苏京晶光电科技有限公司 A kind of preparation method of sapphire wafer fine grinding lapping liquid
CN112608717A (en) * 2020-12-17 2021-04-06 长沙蓝思新材料有限公司 Coarse grinding fluid and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102250581A (en) * 2011-04-14 2011-11-23 阜新天源钢球制造有限公司 Circulating hard grinding agent of diamond micro powder grinding fluid as well as preparation and use methods thereof
CN102311717A (en) * 2010-06-30 2012-01-11 中国科学院微电子研究所 High-hardness micron grinding fluid and preparation method thereof
CN102337082A (en) * 2011-07-11 2012-02-01 河南科技学院 Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof
CN103013345A (en) * 2012-12-21 2013-04-03 清华大学 Oily diamond grinding liquid and preparation method thereof
KR101304143B1 (en) * 2011-08-01 2013-09-05 배은식 Method for fabricating polishing pad
CN104592898A (en) * 2015-01-04 2015-05-06 江苏中晶科技有限公司 High-performance sapphire grinding fluid and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102311717A (en) * 2010-06-30 2012-01-11 中国科学院微电子研究所 High-hardness micron grinding fluid and preparation method thereof
CN102250581A (en) * 2011-04-14 2011-11-23 阜新天源钢球制造有限公司 Circulating hard grinding agent of diamond micro powder grinding fluid as well as preparation and use methods thereof
CN102337082A (en) * 2011-07-11 2012-02-01 河南科技学院 Water-based 6H-SiC monocrystalline substrate chemical mechanical polishing (CMP) solution and preparation method thereof
KR101304143B1 (en) * 2011-08-01 2013-09-05 배은식 Method for fabricating polishing pad
CN103013345A (en) * 2012-12-21 2013-04-03 清华大学 Oily diamond grinding liquid and preparation method thereof
CN104592898A (en) * 2015-01-04 2015-05-06 江苏中晶科技有限公司 High-performance sapphire grinding fluid and preparation method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106271956A (en) * 2016-08-15 2017-01-04 安徽省银锐玻璃机械有限公司 Complex liquid for glass edging
CN106271900A (en) * 2016-08-31 2017-01-04 天通银厦新材料有限公司 A kind of sapphire glossing
CN107057641A (en) * 2016-12-31 2017-08-18 东莞市淦宏信息科技有限公司 A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass
CN106863025A (en) * 2017-03-28 2017-06-20 江苏吉星新材料有限公司 A kind of 2 inch, 4 inch Sapphire Substrate defect on back side Repair gene methods
CN108192505A (en) * 2018-02-01 2018-06-22 湖南有色金属职业技术学院 A kind of silicon substrate A is to sapphire polishing liquid and preparation method thereof
CN108192505B (en) * 2018-02-01 2020-06-05 湖南有色金属职业技术学院 Silicon-based A-direction sapphire polishing solution and preparation method thereof
CN108276003A (en) * 2018-02-13 2018-07-13 苏州纳朴材料科技有限公司 A method of preparing boron carbide complex phase ceramic using sapphire grinding dead meal
CN110340785A (en) * 2019-07-29 2019-10-18 佛山市建信塑料制品有限公司 A kind of cosmetic packaging bottle production line and production method
CN110484207A (en) * 2019-09-20 2019-11-22 江苏京晶光电科技有限公司 A kind of preparation method of sapphire wafer fine grinding lapping liquid
CN112608717A (en) * 2020-12-17 2021-04-06 长沙蓝思新材料有限公司 Coarse grinding fluid and preparation method thereof

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Address after: 523808 Songhu Huake industrial Incubation Park, No. 6, Gongye South Road, Songshanhu high tech Industrial Development Zone, Dongguan City, Guangdong Province

Patentee after: Dongguan Zhongwei Lihe Semiconductor Technology Co.,Ltd.

Address before: 523808 Songhu Huake industrial Incubation Park, No. 6, Gongye South Road, Songshanhu high tech Industrial Development Zone, Dongguan City, Guangdong Province

Patentee before: DONGGUAN CITY ZONEWE NANO TECHNOLOGY Co.,Ltd.