CN104449399A - Chemical mechanical polishing composite applicable to A side of sapphire - Google Patents
Chemical mechanical polishing composite applicable to A side of sapphire Download PDFInfo
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- CN104449399A CN104449399A CN201410685233.XA CN201410685233A CN104449399A CN 104449399 A CN104449399 A CN 104449399A CN 201410685233 A CN201410685233 A CN 201410685233A CN 104449399 A CN104449399 A CN 104449399A
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- sapphire
- abrasive grains
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- face
- mechanical polishing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical mechanical polishing composite applicable to an A side of sapphire. The composite comprises the following components by weight percentage: 5-50% of grinding particles, 0.01-10% of complexing agent, 0.01-5% of surfactant, 0.001-1% of bacteriostatic agent, 0.1-10% of inorganic base and the balance of water. An A side sapphire wafer polished by the polishing composite is better in removal rate and surface roughness; the removal rate is increased to be above 1um/h from the existing about 0.4um/h; and the production efficiency can be significantly improved.
Description
Technical field
The invention belongs to the manufacture field of sapphire wafer, particularly a kind of chemical-mechanical polishing compositions for sapphire A face.
Background technology
Sapphire single-crystal (Sapphire), also known as white stone, molecular formula is Al2O3, transparent, with natural gemstone, there is identical optical characteristics and mechanical property, there is good thermal property, fabulous electrical specification and dielectric characteristics, and anti-chemical corrosion, high to infrared light transmission, have good wearability, hardness is only second to diamond, reach Mohs 9 grades, at high temperature still there is good stability, fusing point is 2030 DEG C, so be widely used in industry, national defence, the fields such as scientific research, be used as Solid State Laser more and more, infrared window, the substrate slice of semi-conductor chip, the manufactured materials of part in the high-tech sectors such as accurate anti-friction bearing.
Sapphire has excellent chemical stability, optical transparence and desirable mechanical property, as cracking resistance, weather resistance, Scratch Resistance, radioresistance and the flexural strength etc. at high temperature, be widely used in LED substrate, infrared window, the fields such as mobile phone faceplate.No matter be LED substrate, infrared window or mobile phone faceplate, all need surperficial ultra-smooth, and the realization of this object largely depends on the surface working of Sapphire Substrate, chemically machinery polished (CMP) is its Surface-micromachining process the most general at present.In CMP, one of most critical consumptive material is polishing fluid, and its performance directly affects the surface quality after processing.
Sapphire wafer can cut along many crystallographic axis according to purposes difference, see Fig. 1, such as C face (0001 to, also referred to as 0 degree of plane or basal plane), (11-20 direction, A face, also referred to as 90 degree of sapphires) and R face (1-102 direction becomes 57.6 degree with C face).C surface sapphire does not have polarity, makes LED substrate so the most frequently used, and growing GaN is of heap of stone brilliant on this basis.R surface sapphire is used in particular in semi-conductor, microwave and pressure transmitter.A surface sapphire comparatively C face and R face finer and close, be processed into diaphragm, mobile phone faceplate with it, not only utilize the advantages such as its more high temperature resistant, anticorrosive and high rigidity, more avoid the wafer defect problem that C face exists, improve the utilization ratio of crystal, greatly reduce cost.Because sapphire C face is different from A face density, the polishing composition used in polishing process is also different, and finer and close sapphire A face is removed in polishing, and most distinct issues are that polishing speed is low, and the process-cycle is long.The still more processing being absorbed in C face LED substrate of current whole sapphire industry, for the chemically machinery polished processing technology also rare report in A face.Along with a large amount of uses of the A such as infrared window, mobile phone faceplate surface sapphire, be applicable to the sapphire polishing composition in A face in the urgent need to exploitation, to meet the sharp increase volume market requirement in recent years.
Summary of the invention
The object of the invention is, overcome the deficiencies in the prior art, a kind of chemical-mechanical polishing compositions being applicable to sapphire A face is provided.
A kind of chemical-mechanical polishing compositions being applicable to sapphire A face of the present invention, is achieved through the following technical solutions:
Described a kind of chemical-mechanical polishing compositions being applicable to sapphire A face, is made up of abrasive grains, complexing agent, tensio-active agent, fungistat, mineral alkali and water;
Described abrasive grains is one or more compositions in the SiO 2 high molecular abrasive grains of silicon-dioxide, aluminium sesquioxide or aluminium coating; The better content of abrasive grains is weight percentage 5 ~ 50%, and better content is 10-40%; The particle diameter of abrasive grains is 20 ~ 200nm, is preferably 40-150nm, is more preferred from 60-120nm;
Described complexing agent is one or more compositions in ethylenediamine tetraacetic acid (EDTA), disodium edta, ethylene diamine tetraacetic acid sylvite, hydroxyethylethylene diamine, nitrilotriacetic acid sodium salt, nitrilotriacetic acid sylvite, and the better content of complexing agent is weight percentage 0.01 ~ 10%;
Described tensio-active agent is one or more compositions in ethoxylated dodecyl alcohol, secondary alcohol Soxylat A 25-7, polyoxyethylene nonylphenol ether, polyoxyethylene octylphenol ether, dodecyl phenol polyethenoxy ether, and the better content of tensio-active agent is weight percentage 0.01 ~ 5%;
Described fungistat is the one or more combination thing in methyl p-hydroxybenzoate, hydroxyethyl perhydro-s-triazine, trichloro-butyl alcohol, and the better content of fungistat is weight percentage 0.001 ~ 1%;
Described mineral alkali is one or both compositions in sodium hydroxide, potassium hydroxide, and the better content of mineral alkali is weight percentage 0.1 ~ 10%;
Described water is preferably deionized water, supplies content to weight percent 100% with water.
Polishing fluid of the present invention can be prepared as follows: mixed in proportion by all components, directly uses.
Positive progressive effect of the present invention is: this polishing composition is applicable to the chemically machinery polished in sapphire A face, removal speed and the surfaceness effect of the A surface sapphire wafer after polishing composition polishing of the present invention are better, remove speed and bring up to more than 1um/h from existing about 0.4um/h, can production efficiency be significantly improved.
Accompanying drawing explanation
The different crystal plane schematic diagram of Fig. 1 sapphire wafer.
Polishing condition: pressure is 150-400g/cm
2, rotating speed is 20-60rpm, and flow is 0.5-2L/min, and polishing pad is commercially available Suba600 or Suba800 type or other polyurethane-type polishing halls.Polishing machine platform is Taiwan wound skill single side polishing machine, measures polish removal rate, measure the surface roughness value in the region of 50um*50um by Angilent 5600LS atomic force microscope with XP300 step instrument.
Claims (5)
1. be applicable to the chemical-mechanical polishing compositions in sapphire A face, it is characterized in that, it is made up of abrasive grains, complexing agent, tensio-active agent, fungistat, mineral alkali and water;
Described abrasive grains is one or more in the SiO 2 high molecular abrasive grains of silicon-dioxide, aluminium sesquioxide or aluminium coating; The content of abrasive grains is weight percentage 5 ~ 50%;
Described complexing agent is one or more in ethylenediamine tetraacetic acid (EDTA), disodium edta, ethylene diamine tetraacetic acid sylvite, hydroxyethylethylene diamine, nitrilotriacetic acid sodium salt, nitrilotriacetic acid sylvite; The content of complexing agent is weight percentage 0.01 ~ 10%;
Described tensio-active agent is one or more in ethoxylated dodecyl alcohol, secondary alcohol Soxylat A 25-7, polyoxyethylene nonylphenol ether, polyoxyethylene octylphenol ether, dodecyl phenol polyethenoxy ether; The content of tensio-active agent is weight percentage 0.01 ~ 5%;
Described fungistat is one or more in methyl p-hydroxybenzoate, hydroxyethyl perhydro-s-triazine, trichloro-butyl alcohol; The content of fungistat is weight percentage 0.001 ~ 1%
Described mineral alkali is one or both in sodium hydroxide, potassium hydroxide; The content of mineral alkali is weight percentage 0.1 ~ 10%;
Content is supplied to weight percent 100% with water.
2. a kind of chemical-mechanical polishing compositions being applicable to sapphire A face as claimed in claim 1, it is characterized in that, the content of abrasive grains is 10-40%.
3. a kind of chemical-mechanical polishing compositions being applicable to sapphire A face as claimed in claim 1, it is characterized in that, the particle diameter of described abrasive grains is 20 ~ 200nm.
4. a kind of chemical-mechanical polishing compositions being applicable to sapphire A face as claimed in claim 3, it is characterized in that, the particle diameter of abrasive grains is 40-150nm.
5. a kind of chemical-mechanical polishing compositions being applicable to sapphire A face as claimed in claim 4, it is characterized in that, the particle diameter of abrasive grains is 60-120nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410685233.XA CN104449399A (en) | 2014-11-25 | 2014-11-25 | Chemical mechanical polishing composite applicable to A side of sapphire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410685233.XA CN104449399A (en) | 2014-11-25 | 2014-11-25 | Chemical mechanical polishing composite applicable to A side of sapphire |
Publications (1)
| Publication Number | Publication Date |
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| CN104449399A true CN104449399A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410685233.XA Pending CN104449399A (en) | 2014-11-25 | 2014-11-25 | Chemical mechanical polishing composite applicable to A side of sapphire |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104830234A (en) * | 2015-04-23 | 2015-08-12 | 深圳杰明纳微电子科技有限公司 | A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof |
| CN105199610A (en) * | 2015-10-16 | 2015-12-30 | 郑州磨料磨具磨削研究所有限公司 | Sapphire polishing composition and preparation method thereof |
| CN106590441A (en) * | 2016-12-29 | 2017-04-26 | 东莞市淦宏信息科技有限公司 | Sapphire grinding fluid |
| CN106700944A (en) * | 2016-12-09 | 2017-05-24 | 北京国瑞升科技股份有限公司 | Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof |
| CN107057641A (en) * | 2016-12-31 | 2017-08-18 | 东莞市淦宏信息科技有限公司 | A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass |
| CN108239484A (en) * | 2016-12-23 | 2018-07-03 | 蓝思科技（长沙）有限公司 | A kind of sapphire polishing alumina polishing solution and preparation method thereof |
| CN116063929A (en) * | 2023-01-03 | 2023-05-05 | 广东粤港澳大湾区黄埔材料研究院 | A-direction sapphire substrate polishing solution and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104830234A (en) * | 2015-04-23 | 2015-08-12 | 深圳杰明纳微电子科技有限公司 | A-directional sapphire mobile phone cover plate polishing solution and preparation method thereof |
| CN105199610A (en) * | 2015-10-16 | 2015-12-30 | 郑州磨料磨具磨削研究所有限公司 | Sapphire polishing composition and preparation method thereof |
| CN105199610B (en) * | 2015-10-16 | 2017-12-19 | 郑州磨料磨具磨削研究所有限公司 | A kind of sapphire polishing composition and preparation method thereof |
| CN106700944A (en) * | 2016-12-09 | 2017-05-24 | 北京国瑞升科技股份有限公司 | Synthetic alkali, A-direction sapphire polishing solution and preparation method thereof |
| CN106700944B (en) * | 2016-12-09 | 2018-08-21 | 北京国瑞升科技股份有限公司 | A kind of synthetic alkali, A are to sapphire polishing liquid and preparation method thereof |
| CN108239484A (en) * | 2016-12-23 | 2018-07-03 | 蓝思科技（长沙）有限公司 | A kind of sapphire polishing alumina polishing solution and preparation method thereof |
| CN108239484B (en) * | 2016-12-23 | 2020-09-25 | 蓝思科技（长沙）有限公司 | Alumina polishing solution for sapphire polishing and preparation method thereof |
| CN106590441A (en) * | 2016-12-29 | 2017-04-26 | 东莞市淦宏信息科技有限公司 | Sapphire grinding fluid |
| CN107057641A (en) * | 2016-12-31 | 2017-08-18 | 东莞市淦宏信息科技有限公司 | A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass |
| CN116063929A (en) * | 2023-01-03 | 2023-05-05 | 广东粤港澳大湾区黄埔材料研究院 | A-direction sapphire substrate polishing solution and preparation method thereof |
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Application publication date: 20150325 |
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