CN102212334A - Coarse grinding fluid for sapphire substrate and preparation method thereof - Google Patents
Coarse grinding fluid for sapphire substrate and preparation method thereof Download PDFInfo
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- CN102212334A CN102212334A CN2011100977821A CN201110097782A CN102212334A CN 102212334 A CN102212334 A CN 102212334A CN 2011100977821 A CN2011100977821 A CN 2011100977821A CN 201110097782 A CN201110097782 A CN 201110097782A CN 102212334 A CN102212334 A CN 102212334A
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- sapphire substrate
- substrate sheet
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- lapping liquid
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a coarse grinding fluid for a sapphire substrate and a preparation method thereof; the grinding fluid comprises boron carbide, water and a suspending liquid, wherein the weight ratio of the boron carbide to the water to the suspending liquid is 2:4:1, the suspending liquid comprises a dispersing agent, a suspending agent and an antirusing agent, the weight ratio of the dispersing agent to the suspending agent to the antirusting agent is 2:5:1; the dispersing agent is macromolecule organic alcohol; the suspending agent is a macromolecule compound; and the antirusting agent is alkali. Due to the adoption of the technical scheme, the grinding fluid has the advantages of low cost and good stability; and therefore, the machining efficiency is greatly increased and the evenness of a wafer is greatly improved.
Description
Technical field
The present invention relates to a kind of Sapphire Substrate sheet corase grind lapping liquid and compound method thereof.
Background technology
Two-sided attenuate is the first step of Sapphire Substrate sheet manufacturing procedure, also is a vital step, and the thickness of two-sided attenuate, TTV, back side roughness directly influence the processing quality of postorder.Usually twin grinding adopts aluminum oxide or bortz powder to grind, and these two kinds of materials are unfavorable for the requirement of sapphire planeness, and with high costs.
Summary of the invention
Technical problem to be solved by this invention provides a kind of Sapphire Substrate sheet corase grind lapping liquid and compound method thereof, and gained lapping liquid cost is low, good stability.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: Sapphire Substrate sheet corase grind lapping liquid, form by norbide, water and suspension, the weight ratio of norbide, water and suspension=2: 4: 1, described suspension is made up of dispersion agent, suspension agent and rust-preventive agent, the weight ratio of dispersion agent, suspension agent and rust-preventive agent=2: 5: 1, and described dispersion agent is the organic alcohol of polymer, described suspension agent is a macromolecular compound, and described rust-preventive agent is alkali.
As preferably, the organic alcohol of described polymer is ethylene glycol.
As preferably, described macromolecular compound is a stearic acid.
As preferably, described alkali is sodium hydroxide.
The compound method of Sapphire Substrate sheet corase grind lapping liquid may further comprise the steps: a, take by weighing raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.
As preferably, the frequency of described ultra-sonic oscillation instrument is 28khz, and power is 300w.
The present invention is owing to adopted technique scheme, and gained lapping liquid cost is low, and good stability improves working (machining) efficiency greatly, makes the wafer leveling degree greatly improve.
Embodiment
Sapphire Substrate sheet corase grind lapping liquid, form by norbide, water and suspension, the weight ratio of norbide, water and suspension=2: 4: 1, described suspension is made up of ethylene glycol, stearic acid and sodium hydroxide, the weight ratio of ethylene glycol, stearic acid and sodium hydroxide=2: 5: 1.Wherein, norbide adopts the norbide of model F240.
The compound method of Sapphire Substrate sheet corase grind lapping liquid may further comprise the steps: a, take by weighing raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.The frequency of described ultra-sonic oscillation instrument is 28khz, and power is 300w.
The product that adopts norbide lapping liquid of the present invention to process, whole disc thickness is accurate to target thickness ± 1um, surface finish TTV≤2um, the back side does not have scuffing, back side roughness 0.8~1.2um.
Claims (6)
1. the Sapphire Substrate sheet is roughly ground lapping liquid, it is characterized in that: form by norbide, water and suspension, the weight ratio of norbide, water and suspension=2: 4: 1, described suspension is made up of dispersion agent, suspension agent and rust-preventive agent, the weight ratio of dispersion agent, suspension agent and rust-preventive agent=2: 5: 1, described dispersion agent is the organic alcohol of polymer, and described suspension agent is a macromolecular compound, and described rust-preventive agent is alkali.
2. according to the described Sapphire Substrate sheet corase grind of claim 1 lapping liquid, it is characterized in that: the organic alcohol of described polymer is ethylene glycol.
3. according to the described Sapphire Substrate sheet corase grind of claim 1 lapping liquid, it is characterized in that: described macromolecular compound is a stearic acid.
4. according to the described Sapphire Substrate sheet corase grind of claim 1 lapping liquid, it is characterized in that: described alkali is sodium hydroxide.
5. according to the compound method of the described Sapphire Substrate sheet of claim 1 corase grind lapping liquid, it is characterized in that: may further comprise the steps: a, take by weighing raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.
6. according to the compound method of the described Sapphire Substrate sheet corase grind of claim 5 lapping liquid, it is characterized in that: the frequency of described ultra-sonic oscillation instrument is 28khz, and power is 300w.
Priority Applications (1)
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CN 201110097782 CN102212334B (en) | 2011-04-19 | 2011-04-19 | Coarse grinding fluid for sapphire substrate and preparation method thereof |
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CN 201110097782 CN102212334B (en) | 2011-04-19 | 2011-04-19 | Coarse grinding fluid for sapphire substrate and preparation method thereof |
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CN102212334A true CN102212334A (en) | 2011-10-12 |
CN102212334B CN102212334B (en) | 2013-06-26 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104051584A (en) * | 2014-06-25 | 2014-09-17 | 中国科学院半导体研究所 | Sapphire patterned substrate wafer and preparation method |
CN104669105A (en) * | 2013-11-26 | 2015-06-03 | 浙江上城科技有限公司 | Two-surface grinding method of sapphire touch panel |
CN105482715A (en) * | 2015-12-02 | 2016-04-13 | 珠海东精大电子科技有限公司 | Sapphire grinding liquid, and preparation method and use method thereof |
CN105505231A (en) * | 2016-02-24 | 2016-04-20 | 湖南皓志科技股份有限公司 | Efficient boron carbide grinding fluid and method for preparing same |
CN105538131A (en) * | 2015-12-02 | 2016-05-04 | 珠海东精大电子科技有限公司 | Sapphire diaphragm machining process |
CN106497515A (en) * | 2016-10-25 | 2017-03-15 | 河南醒狮供应链管理有限公司 | For grinding the carbide superhard material of sapphire wafer |
CN107057641A (en) * | 2016-12-31 | 2017-08-18 | 东莞市淦宏信息科技有限公司 | A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass |
CN110484207A (en) * | 2019-09-20 | 2019-11-22 | 江苏京晶光电科技有限公司 | A kind of preparation method of sapphire wafer fine grinding lapping liquid |
CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
CN112029416A (en) * | 2020-09-02 | 2020-12-04 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005100496A2 (en) * | 2004-03-24 | 2005-10-27 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
CN101016439A (en) * | 2007-02-06 | 2007-08-15 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing pulp for sapphire substrate underlay |
-
2011
- 2011-04-19 CN CN 201110097782 patent/CN102212334B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005100496A2 (en) * | 2004-03-24 | 2005-10-27 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
CN101016439A (en) * | 2007-02-06 | 2007-08-15 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing pulp for sapphire substrate underlay |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104669105A (en) * | 2013-11-26 | 2015-06-03 | 浙江上城科技有限公司 | Two-surface grinding method of sapphire touch panel |
CN104051584A (en) * | 2014-06-25 | 2014-09-17 | 中国科学院半导体研究所 | Sapphire patterned substrate wafer and preparation method |
CN105482715A (en) * | 2015-12-02 | 2016-04-13 | 珠海东精大电子科技有限公司 | Sapphire grinding liquid, and preparation method and use method thereof |
CN105538131A (en) * | 2015-12-02 | 2016-05-04 | 珠海东精大电子科技有限公司 | Sapphire diaphragm machining process |
CN105505231A (en) * | 2016-02-24 | 2016-04-20 | 湖南皓志科技股份有限公司 | Efficient boron carbide grinding fluid and method for preparing same |
CN106497515A (en) * | 2016-10-25 | 2017-03-15 | 河南醒狮供应链管理有限公司 | For grinding the carbide superhard material of sapphire wafer |
CN107057641A (en) * | 2016-12-31 | 2017-08-18 | 东莞市淦宏信息科技有限公司 | A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass |
CN110484207A (en) * | 2019-09-20 | 2019-11-22 | 江苏京晶光电科技有限公司 | A kind of preparation method of sapphire wafer fine grinding lapping liquid |
CN111995983A (en) * | 2020-09-02 | 2020-11-27 | 中科孚迪科技发展有限公司 | Preparation method of grinding fluid for processing semiconductor wafer |
CN112029416A (en) * | 2020-09-02 | 2020-12-04 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
CN112029416B (en) * | 2020-09-02 | 2022-06-03 | 中科孚迪科技发展有限公司 | Grinding fluid for processing semiconductor wafer |
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Effective date of registration: 20151105 Address after: 311822 Zhejiang city of Zhuji province Jiang Zao Zhen Yu Jiang Cungao. Patentee after: Zhejiang Rotong Electro-mechanics Co., Ltd. Address before: 311814, Zhejiang, Shaoxing province Zhuji shop town smile Road No. 38 Patentee before: Zhejiang Luxiao Photoelectric Co.,Ltd. |