CN102212334B - Coarse grinding fluid for sapphire substrate and preparation method thereof - Google Patents

Coarse grinding fluid for sapphire substrate and preparation method thereof Download PDF

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Publication number
CN102212334B
CN102212334B CN 201110097782 CN201110097782A CN102212334B CN 102212334 B CN102212334 B CN 102212334B CN 201110097782 CN201110097782 CN 201110097782 CN 201110097782 A CN201110097782 A CN 201110097782A CN 102212334 B CN102212334 B CN 102212334B
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agent
grinding fluid
sapphire substrate
suspension
coarse grinding
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CN102212334A (en
Inventor
景旭斌
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Zhejiang Rotong Electro-mechanics Co., Ltd.
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ZHEJIANG LUXIAO PHOTOELECTRIC CO Ltd
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention discloses a coarse grinding fluid for a sapphire substrate and a preparation method thereof; the grinding fluid comprises boron carbide, water and a suspending liquid, wherein the weight ratio of the boron carbide to the water to the suspending liquid is 2:4:1, the suspending liquid comprises a dispersing agent, a suspending agent and an antirusing agent, the weight ratio of the dispersing agent to the suspending agent to the antirusting agent is 2:5:1; the dispersing agent is macromolecule organic alcohol; the suspending agent is a macromolecule compound; and the antirusting agent is alkali. Due to the adoption of the technical scheme, the grinding fluid has the advantages of low cost and good stability; and therefore, the machining efficiency is greatly increased and the evenness of a wafer is greatly improved.

Description

Coarse grinding fluid for sapphire substrate and compound method thereof
Technical field
The present invention relates to a kind of coarse grinding fluid for sapphire substrate and compound method thereof.
Background technology
Two-sided attenuate is the first step of Sapphire Substrate sheet manufacturing procedure, is also a vital step, and the thickness of two-sided attenuate, TTV, back side roughness directly affect the processing quality of postorder.Usually twin grinding adopts aluminum oxide or bortz powder to grind, and these two kinds of materials are unfavorable for the requirement of sapphire planeness, and with high costs.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of coarse grinding fluid for sapphire substrate and compound method thereof, and gained lapping liquid cost is low, good stability.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: coarse grinding fluid for sapphire substrate, formed by norbide, water and suspension, the weight ratio of norbide, water and suspension=2: 4: 1, described suspension is comprised of dispersion agent, suspension agent and rust-preventive agent, the weight ratio of dispersion agent, suspension agent and rust-preventive agent=2: 5: 1, and described dispersion agent is the polymer Organic Alcohol, described suspension agent is macromolecular compound, and described rust-preventive agent is alkali.
As preferably, described polymer Organic Alcohol is ethylene glycol.
As preferably, described macromolecular compound is stearic acid.
As preferably, described alkali is sodium hydroxide.
The compound method of coarse grinding fluid for sapphire substrate comprises the following steps: a, take raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.
As preferably, the frequency of described ultra-sonic oscillation instrument is 28khz, and power is 300w.
The present invention is owing to having adopted technique scheme, and gained lapping liquid cost is low, and good stability improves working (machining) efficiency greatly, makes the wafer leveling degree greatly improve.
Embodiment
Coarse grinding fluid for sapphire substrate, formed by norbide, water and suspension, the weight ratio of norbide, water and suspension=2: 4: 1, described suspension is comprised of ethylene glycol, stearic acid and sodium hydroxide, the weight ratio of ethylene glycol, stearic acid and sodium hydroxide=2: 5: 1.Wherein, norbide adopts the norbide of model F240.
The compound method of coarse grinding fluid for sapphire substrate comprises the following steps: a, take raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.The frequency of described ultra-sonic oscillation instrument is 28khz, and power is 300w.
The product that adopts norbide lapping liquid of the present invention to process, whole disc thickness is accurate to target thickness ± 1um, surface finish TTV≤2um, the back side is without scuffing, back side roughness 0.8~1.2um.

Claims (4)

1. coarse grinding fluid for sapphire substrate, it is characterized in that: formed by norbide, water and suspension, weight ratio=the 2:4:1 of norbide, water and suspension, described suspension is comprised of dispersion agent, suspension agent and rust-preventive agent, weight ratio=the 2:5:1 of dispersion agent, suspension agent and rust-preventive agent, described dispersion agent is ethylene glycol, and described suspension agent is stearic acid, and described rust-preventive agent is alkali.
2. coarse grinding fluid for sapphire substrate according to claim 1, it is characterized in that: described alkali is sodium hydroxide.
3. the compound method of coarse grinding fluid for sapphire substrate according to claim 1 is characterized in that: comprise the following steps: a, take raw material according to the described proportioning of claim 1 and mix; B, step a gained liquid is filtered with 100 order filtering nets; C, with step b gained liquid with ultra-sonic oscillation instrument vibration 15 minutes.
4. the compound method of coarse grinding fluid for sapphire substrate according to claim 3, it is characterized in that: the frequency of described ultra-sonic oscillation instrument is 28kHz, power is 300W.
CN 201110097782 2011-04-19 2011-04-19 Coarse grinding fluid for sapphire substrate and preparation method thereof Active CN102212334B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110097782 CN102212334B (en) 2011-04-19 2011-04-19 Coarse grinding fluid for sapphire substrate and preparation method thereof

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Application Number Priority Date Filing Date Title
CN 201110097782 CN102212334B (en) 2011-04-19 2011-04-19 Coarse grinding fluid for sapphire substrate and preparation method thereof

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CN102212334B true CN102212334B (en) 2013-06-26

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104669105B (en) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 A kind of two sides Ginding process of sapphire touch panel
CN104051584A (en) * 2014-06-25 2014-09-17 中国科学院半导体研究所 Sapphire patterned substrate wafer and preparation method
CN105538131A (en) * 2015-12-02 2016-05-04 珠海东精大电子科技有限公司 Sapphire diaphragm machining process
CN105482715A (en) * 2015-12-02 2016-04-13 珠海东精大电子科技有限公司 Sapphire grinding liquid, and preparation method and use method thereof
CN105505231A (en) * 2016-02-24 2016-04-20 湖南皓志科技股份有限公司 Efficient boron carbide grinding fluid and method for preparing same
CN106497515B (en) * 2016-10-25 2018-10-12 河南醒狮供应链管理有限公司 Manufacturing method for the carbide superhard material for grinding sapphire wafer
CN107057641A (en) * 2016-12-31 2017-08-18 东莞市淦宏信息科技有限公司 A kind of special-purpose grinding fluid of synthetic sapphire camera eyeglass
CN110484207B (en) * 2019-09-20 2020-05-29 江苏京晶光电科技有限公司 Preparation method of sapphire wafer fine grinding fluid
CN111995983A (en) * 2020-09-02 2020-11-27 中科孚迪科技发展有限公司 Preparation method of grinding fluid for processing semiconductor wafer
CN112029416B (en) * 2020-09-02 2022-06-03 中科孚迪科技发展有限公司 Grinding fluid for processing semiconductor wafer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
CN100478412C (en) * 2007-02-06 2009-04-15 中国科学院上海微系统与信息技术研究所 Chemical mechanical polishing pulp for sapphire substrate underlay

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Effective date of registration: 20151105

Address after: 311822 Zhejiang city of Zhuji province Jiang Zao Zhen Yu Jiang Cungao.

Patentee after: Zhejiang Rotong Electro-mechanics Co., Ltd.

Address before: 311814, Zhejiang, Shaoxing province Zhuji shop town smile Road No. 38

Patentee before: Zhejiang Luxiao Photoelectric Co.,Ltd.