JP5384037B2 - Polishing liquid composition for sapphire substrate and method for polishing sapphire substrate - Google Patents

Polishing liquid composition for sapphire substrate and method for polishing sapphire substrate Download PDF

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JP5384037B2
JP5384037B2 JP2008153253A JP2008153253A JP5384037B2 JP 5384037 B2 JP5384037 B2 JP 5384037B2 JP 2008153253 A JP2008153253 A JP 2008153253A JP 2008153253 A JP2008153253 A JP 2008153253A JP 5384037 B2 JP5384037 B2 JP 5384037B2
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polishing
sapphire substrate
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宣勝 加藤
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山口精研工業株式会社
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Description

  The present invention relates to a polishing composition for a sapphire substrate and a method for polishing a sapphire substrate using the polishing composition for a sapphire substrate. More specifically, the present invention relates to a polishing liquid composition useful for polishing a sapphire substrate used as a substrate for growing an epitaxial film of a nitride-based semiconductor light-emitting device, and a polishing method using the polishing liquid composition.

  As a sapphire substrate used in the manufacture of Group III nitride semiconductor light-emitting devices, sapphire crystals grown by the Cairo porous method, EFG method, and Czochralski method are cut into wafers with a wire saw, and mechanochemical polishing is performed. A mirror-polished material by (CMP) is used. The substrate for growing an epitaxial film of a nitride-based semiconductor light-emitting device used as a light-emitting device has no processing strain remaining and is clean in order to grow a high-quality epitaxial film (group III nitride-based semiconductor layer). It is required to have a smooth flat surface without defects.

  As a polishing method for mirror-polishing a sapphire substrate grown by an inexpensive Czochralski method, a method using a polishing liquid prepared with a silica content of 35 to 50% by weight in colloidal silica is known (patent) Reference 1).

  In addition, in order to grow a good film of a group III nitride semiconductor layer, it is known to perform a reducing action on the main surface of the sapphire substrate (Patent Document 2).

  Furthermore, when processing the thickness of a sapphire wafer to 100 micrometers or less, it is known that generation | occurrence | production of chipping can be reduced by covering the side surface of a sapphire wafer with a dummy material (patent document 3).

JP 2008-44078 A JP 2004-111848 A JP 2003-245847 A

  However, conventional mirror polishing by mechanochemical polishing due to colloidal silica generates pits on the substrate, and an excellent nitride-based semiconductor light-emitting device cannot be obtained, and the polishing rate is slow, causing problems in productivity. there were. In Patent Document 1, there is a description that mirror polishing can be performed by mechanical polishing of colloidal silica, but there is no description of the surface roughness of the surface to be polished and no description of the polishing rate.

  Patent Documents 2 and 3 have problems with the surface to be polished and the polishing rate. Chemical mechanical polishing using colloidal silica on the polishing pad has a low polishing rate.

  This invention is made | formed in view of such a subject, and provides the polishing liquid composition for sapphire substrates which can produce the sapphire substrate excellent in the surface roughness of the to-be-polished surface at a high polishing rate. This is the issue. In addition, the present invention provides a polishing method for a sapphire substrate for producing a high-performance and low-cost sapphire substrate, which is used for manufacturing a nitride-based semiconductor light-emitting device, using the polishing composition.

  The inventor solves the above problems by using a polishing composition for a sapphire substrate comprising at least one of an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group, silica particles, and water. I found that I could do it. That is, according to this invention, the polishing composition for the following sapphire substrates used when grind | polishing a sapphire substrate and the grinding | polishing method of a sapphire substrate are provided.

[1] Used when polishing a sapphire substrate, comprising both an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group, silica particles, and water, (alkanolamine compound) / (perfluorofluorocarbon) the weight ratio of the fluorine-based compound) having an alkyl group, 100 to 400 der is, the silica particles are colloidal silica, the content of the colloidal silica is 5-50 wt%, average particle diameter of the colloidal silica 10~200nm der Ru polishing composition for sapphire substrate.

[ 2 ] The polishing composition for a sapphire substrate according to [1 ], wherein the alkanolamine compound is a general formula (1).
(H) c N [(CH 2 ) a OH] b (1)
[Wherein, a is an alkylene group of 2 to 5, b is 1 to 3, c is 0 to 2, provided that b + c = 3]

[ 3 ] The above [1] or [ 3 ], wherein the alkanolamine compound contains at least one compound composed of 2-hydroxyethylamine, 2,2′-dihydroxydiethylamine, 2,2 ′, 2 ″ -trihydroxytriethylamine. 2 ] The polishing liquid composition for sapphire substrates as described in 2. ].

[ 4 ] The polishing composition for a sapphire substrate according to any one of [1] to [ 3 ], wherein the fluorine-based compound having a perfluoroalkyl group is the general formula (2).
CF 3 (CF 2 ) n (CH 2 ) m X (2)
[Wherein, n is 3 to 10, m is 1 to 3, X is an amino group, carboxylate, ammonium salt, amine oxide, betaine]

[ 5 ] The fluorine compound having a perfluoroalkyl group is selected from the group consisting of perfluoroalkyl amino acid salts, perfluoroalkyl carboxylates, perfluoroalkyltrialkylammonium salts, perfluoroalkylamine oxides, and perfluoroalkylbetaines. The polishing composition for sapphire substrates according to any one of [1] to [ 4 ], which contains at least one selected compound.

[ 6 ] The polishing composition for a sapphire substrate according to any one of [1] to [ 5 ], wherein the pH is 9.5 or more and less than 11.5.

[ 7 ] For the sapphire substrate according to the above [ 6 ], which contains at least one compound selected from the group consisting of inorganic alkali compounds and organic amines as an alkali component for adjusting the pH to 9.5 or more and less than 11.5. Polishing liquid composition.

[ 8 ] The polishing composition for a sapphire substrate according to any one of [1] to [ 7 ] is supplied to a polishing pad in the polishing step of the sapphire substrate, and the polishing pad has a unit load of 150 to 500 g / A method for polishing a sapphire substrate, which is pressed against the sapphire substrate at cm 2 and polished.

[ 9 ] When the polishing pad is pressed against the sapphire substrate in the polishing process of the sapphire substrate and polished, the temperature of the polishing composition for the sapphire substrate supplied to the polishing pad is 20 to 30 ° C. The method for polishing a sapphire substrate according to [ 8 ] above.

  By using the polishing liquid composition for a sapphire substrate of the present invention, the surface roughness of the surface to be polished can be reduced and the surface to be polished can be finished without defects at a high polishing rate. In addition, according to the method for polishing a sapphire substrate of the present invention, the polishing rate can be increased and good polishing can be performed, so that the manufacturing time can be shortened and a high-performance sapphire substrate can be manufactured at low cost.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the following embodiments, and changes, modifications, and improvements can be added without departing from the scope of the invention.

  The polishing composition for a sapphire substrate of the present invention is used when polishing a sapphire substrate, and contains at least one of an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group, silica particles, and water. .

  Here, the silica particles are not particularly limited, and examples thereof include one or more selected from the group consisting of colloidal silica, fumed silica, and wet synthetic silica. Of these, colloidal silica is preferred. If the content of colloidal silica in the polishing composition for sapphire substrate is less than 5% by weight, the polishing rate may decrease, and if it exceeds 50% by weight, the polishing rate may improve but the surface quality may decrease. From 5 to 50% by weight is preferable. More preferably, it is 10 to 40% by weight. More preferably, it is 12 to 25%.

  The average particle diameter of the silica particles is preferably in the range of 10 to 200 nm because the polishing rate decreases when the average particle size is less than 10 nm, and the surface roughness of the polished surface is not always good when exceeding 200 nm. 30-100 nm is more preferable. More preferably, it is the range of 40-80 nm.

In the present specification, the average particle diameter is a value measured by a known Sears titration method in the case of colloidal silica. The Sears titration method is converted from specific surface area by titration with sodium hydroxide as described in ANALYTICAL CHEMISTRY Vol. 28 No. 12 (December 1956), p. 1981. This is a method for measuring the particle diameter. Moreover, the average particle diameter (Dp) of fumed silica or wet synthetic silica is calculated from the value (Sa) of the BET method specific surface area using the following conversion formula.
Dp = 6000 / ρ · Sa
(However, Dp: average particle diameter (nm), Sa: BET specific surface area (m 2 / g), ρ: specific gravity (g / cm 3 ))

As the alkanolamine compound, those of the general formula (1) can be used.
(H) c N [(CH 2 ) a OH] b (1)
[Wherein, a is an alkylene group of 2 to 5, b is 1 to 3, c is 0 to 2, provided that b + c = 3]

  In the alkanolamine compound represented by general formula (1) (hereinafter referred to as compound (1)), a represents a chain-like alkylene group having 2 to 5 carbon atoms. The number of carbon atoms of the alkylene group is 2 or more from the viewpoint of improving the polishing rate and the surface roughness of the polished surface of the substrate, and preferably 5 or less from the viewpoint of the basicity of the compound (1). Specifically, 2-hydroxyethylamine, 2,2′-dihydroxydiethylamine, 2,2′-dihydroxydipropylamine, 2,2′-dihydroxydibutylamine, 2,2′-dihydroxydipentylamine, 2,2 ′ -Dihydroxydihexylamine 2,2 ', 2 "-trihydroxytriethylamine, 2,2', 2" -trihydroxytripropylamine, 2,2 ', 2 "-trihydroxytributylamine, 2,2' , 2 ″ -trihydroxytripentylamine, 2,2 ′, 2 ″ -trihydroxytrihexylamine, and the like. These components may be used alone or in admixture of two or more.

  Further, the content of the alkanolamine compound is preferably 0.1 to 20% by weight in the polishing composition for sapphire substrate from the viewpoints of improvement in polishing rate, improvement in surface roughness of the surface to be polished, and economy. More preferably, it is in the range of 0.5 to 10% by weight, more preferably 1 to 5% by weight.

As a fluorine-type compound which has a perfluoroalkyl group, the thing of General formula (2) can be utilized.
CF 3 (CF 2 ) n (CH 2 ) m X (2)
[Wherein, n is 3 to 10, m is 1 to 3, X is an amino group, carboxylate, ammonium salt, amine oxide, betaine]

  In the fluorine compound having a perfluoroalkyl group represented by the general formula (2) (hereinafter referred to as compound (2)), n represents a fluoroethyl group having 3 to 10 carbon atoms on the chain. The carbon number of the fluoroethyl group is 3 or more from the viewpoint of the polishing rate, and preferably 10 or less from the viewpoint of the dissolution rate of the compound (2) in water and the bubble property. m represents the carbon number of the alkylene group. The number of carbon atoms of the alkylene group is preferably 1 to 3 from the viewpoint of the synthesis of a fluorine-based compound having a perfluoroalkyl group. X is an amino group, carboxylate, ammonium salt, amine oxide, or betaine.

  The content of the fluorine-based compound having a perfluoroalkyl group is 0.0001 to 2 in the polishing composition for a sapphire substrate from the viewpoints of improving the polishing rate, improving the surface roughness of the surface to be polished, and economically. % By weight is preferable, more preferably 0.0005 to 1% by weight, still more preferably 0.001 to 0.1% by weight, and still more preferably 0.005 to 0.01% by weight.

  The polishing liquid composition for sapphire substrates of the present invention contains at least one of an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group. The alkanolamine compound captures sapphire polishing debris on the sapphire substrate, improves the discharge rate of sapphire polishing debris from the sapphire substrate, and improves the dispersibility of colloidal silica. It is presumed that this contributes to the reduction of the surface roughness of the surface to be polished. It is speculated that the fluorine-based compound having a perfluoroalkyl group contributes to the reduction of the frictional resistance between the surface of the sapphire substrate and the polishing pad.

  However, with only the alkanolamine compound, the frictional resistance between the sapphire polishing substrate and the polishing pad does not provide sufficient circulation to the gap between the sapphire polishing liquid composition, and the action of the alkanolamine compound cannot be said to be effective. Therefore, when combining an alkanolamine compound and a fluorine compound having a perfluoroalkyl group, the perfluoroalkyl group of the fluorine compound having a perfluoroalkyl group reduces the frictional resistance between the surface of the sapphire substrate and the polishing pad, It is considered that the polishing rate is improved by improving the circulation property of the sapphire polishing liquid composition to the gap between the two, and the surface roughness of the polished surface of the sapphire substrate is also reduced.

  Further, in the polishing composition, it is possible to improve the polishing rate and reduce the surface roughness by blending at least one of an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group. These are preferably combined, and the preferred content ratio of alkanolamine compound and perfluoroalkyl group (alkanolamine compound / fluorine compound having perfluoroalkyl group (weight ratio)) is the average particle diameter of the colloidal particles, polishing liquid Related to the concentration of colloidal silica in the composition. From the viewpoint of sufficiently expressing these effects, the alkanolamine compound / fluorine compound having a perfluoroalkyl group (weight ratio) is preferably 100 to 400.

  Further, a polishing composition having an average particle size of colloidal particles of 8 nm and 15 nm, and a polishing composition having an average particle size of colloidal particles of 80 nm, an alkanol compound / fluorinated compound having a perfluoroalkyl group (weight ratio) is: 100-200 is more preferable. When the colloidal silica concentration in the polishing liquid composition is lower than 20%, the polishing liquid composition having an average particle diameter of the colloidal particles of 40 nm is preferably 200 to 400. When the colloidal silica concentration is higher than 25%, 100 to 200 is preferable.

  Examples of water used in the polishing composition for a sapphire substrate of the present invention include distilled water and ion exchange water. In consideration of the surface cleanability of the sapphire substrate, ion exchange water is preferable. The content may be determined so that various content components have an appropriate concentration and an appropriate viscosity when polishing the sapphire substrate. As content of the water in the polishing liquid composition for sapphire substrates, 60 to 90 weight% is preferable. The polishing composition for a sapphire substrate of the present invention may be prepared to a concentration suitable for polishing a sapphire substrate, but the one prepared as a concentrated solution is adjusted to an appropriate concentration at the time of use. Also good.

  The pH of the polishing liquid composition for a sapphire substrate of the present invention is preferably adjusted in the range of 9.5 or more and less than 11.5. The numerical range of this pH is the polishing rate of the sapphire substrate to be polished, the surface to be polished. In addition to the above characteristics, it is determined from the viewpoint of the stability of the polishing composition for a sapphire substrate. The pH is adjusted by blending a basic substance such as ammonia, an inorganic alkali compound (sodium hydroxide, potassium hydroxide, etc.), an organic amine or the like as needed as an alkaline component for adjusting the pH, if necessary. be able to.

  The polishing liquid composition for sapphire substrates of this invention may contain the component contained in this normal type polishing liquid composition for substrates as needed. Examples of such components include surfactants, detergents, rust inhibitors, surface modifiers, viscosity adjusters, antibacterial agents, and dispersants.

  The polishing composition for sapphire substrates of the present invention can be used when polishing a sapphire substrate with a single-sided and double-sided polishing machine. For example, as a single-side polishing machine, a surface plate with a polishing pad bonded to a rotary table, and a sapphire substrate that is sucked and held on the lower surface and can be rotated above the surface plate so as to press the sapphire substrate against the polishing surface of the surface plate. A device provided with a holding device provided so as to be movable up and down can be used. In this case, while supplying the polishing composition for a sapphire substrate of the present invention to the polishing pad, polishing is performed by pressing the sapphire substrate sucked and held by the holding device against the polishing pad with a predetermined unit load. As the polishing pad, a urethane type, a suede type, a non-woven fabric type, or any other type can be used. Either the first polishing (lapping) or the second polishing (finish polishing, polishing) can be used for the polishing composition for sapphire substrate of the present invention. If the polishing liquid composition for sapphire substrates of the present invention is used, the polishing rate can be increased, and the surface to be polished can be free of scratches and pits and can be mirror-polished with excellent surface roughness.

The present invention also relates to a polishing method for a sapphire substrate. By polishing the sapphire substrate using the above-described polishing composition for sapphire substrate of the present invention, the polishing rate is increased, the surface to be polished has no scratches and pits, and the surface roughness of the surface to be polished is increased. An excellent substrate can be manufactured. Specifically, from the polishing pad of the surface plate to which the polishing pad is attached, the sapphire substrate held by the holding device is pressed, and the polishing pressure by the polishing pad to which the polishing composition for the sapphire substrate of the present invention is supplied is as a sapphire substrate 1 cm 2 per 150~500g / cm 2, is polished by moving the polishing plate and the sapphire substrate.

In the polishing method of the present invention, the polishing pressure is the pressure of the polishing platen applied to the polishing surface of the sapphire substrate during polishing. When the polishing pressure is less than 150 g / cm 2 , the polishing rate is low, and when it exceeds 500 g / cm 2 , the surface roughness of the surface to be polished is affected. Preferably, it is 200-400 g / cm < 2 >.

  Moreover, when the polishing pad is pressed against the sapphire substrate in the polishing process and polished, the temperature of the polishing composition for the sapphire substrate supplied to the polishing pad is preferably 20 to 30 ° C. Polishing of the surface of the sapphire substrate is considered to proceed by hydrolysis of sapphire. Since the reaction is from aluminum oxide to aluminum hydroxide, the higher the hydrolysis temperature, the higher the reaction rate. For this reason, the temperature of the polishing composition is preferably 20 ° C. or more, and if it is less than 20 ° C., the polishing rate becomes slow. That is, the higher the temperature of the polishing composition, the better. However, when the temperature of the polishing composition exceeds 30 ° C., colloidal silica may be aggregated and gelled, and when it exceeds 35 ° C., the stability is significantly deteriorated. When the temperature of the polishing composition exceeds 30 ° C., water evaporates from the polishing composition on the polishing pad, and the concentration of the polishing composition increases and becomes unstable. There is also a problem of distortion due to heat of the sapphire substrate. Therefore, it is preferable that the polishing composition is adjusted using a chiller or the like so as to be 20 ° C. to 30 ° C., and is supplied to the polishing pad to perform the polishing step.

  As described above, by using the sapphire substrate polishing liquid composition of the present invention, the polishing rate can be improved as compared with the prior art. And surface roughness can be reduced rather than before and a high quality sapphire substrate can be manufactured.

  Next, the polishing composition for sapphire substrates of the present invention will be specifically described with reference to examples. In addition, this invention is not limited to the following Examples at all, and as long as it belongs to the technical scope of this invention, it cannot be overemphasized that it can implement with a various aspect.

(Example 1-14, Example 1-8, Comparative Example 1-4)
The colloidal silica shown in Table 3, the alkanolamine compound shown in Table 4, the perfluoroalkyl fluorine compound shown in Table 5, the alkaline compound shown in Table 6, and pure water (remainder) are mixed and stirred, and Table 1 , the polishing composition having the composition shown in 2 (example 1-14, example 1-8, Comparative example 1-4) was obtained.

Note that in the cumulative percent relationship between the particle diameter of the colloidal silica, expressed as the particle size of the colloidal silica in a cumulative 50% D 50 (average particle size of colloidal silica).

  Using the resulting polishing composition, polishing was performed using a single-side polishing machine under the following polishing conditions.

(Polishing conditions)
Polishing processing machine: Fujikoshi Machine Co., Ltd. SLM-100 single-side polishing processing machine Polishing pressure: 250 g / cm 2 , 350 g / cm 2
Polishing pad: SUBA-800 (Rodel Nitta Co., Ltd.)
Plate rotation speed: 60rpm
Supply amount of polishing composition: 100 ml / min
Polishing time: 60 minutes

(Characteristic evaluation of polished surface)
The properties of the surface to be polished were evaluated for three items: polishing rate, surface roughness (surface roughness (Ra)), and presence / absence of scratches and scratches. The polishing rate was determined by the following formula (Formula 1). Moreover, surface roughness (Ra) is arithmetic mean roughness, and was measured using ZYGO NEW VIEW (Zygo) which is an optical interference type non-contact three-dimensional surface shape measuring apparatus. This measurement was performed by cutting a frequency of 0.08 mm or more. The presence or absence of scratches / scratches was examined using an optical microscope at a magnification of 200 times. Table 7 shows the evaluation results of each example and each comparative example.

Polishing rate (μm / min) = (weight before polishing of sapphire substrate−weight after polishing of sapphire substrate) (g) ÷ polishing area of sapphire substrate (cm 2 ) ÷ specific gravity of sapphire substrate (g / cm 3 ) ÷ polishing time (Min) (Formula 1)

  By containing at least one of an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group, the polishing rate was improved, and the surface roughness of the polished surface of the sapphire substrate could be reduced. Further, when an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group were combined, a tendency to be more effective was shown.

However, the average particle size of colloidal silica, colloidal silica concentration, types and concentrations of alkanolamines, types and concentrations of fluorine compounds having a perfluoroalkyl group, and pH factors of the polishing liquid composition act, and the polishing mechanism is complicated. is there. For example, in Examples 10 to 11, an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group were combined, but the effect of reducing the surface roughness was lower than that of only one example. This is presumably because the polishing roughness tends to deteriorate as the average particle size of colloidal silica increases. The average particle size of the colloidal silica of Examples 10 to 11 is 80 nm, the average particle size of the colloidal silica of Reference Examples 6 to 8 is 40 nm, and the concentration of the colloidal silica is 10 to 20% by weight. It is considered that due to the action of colloidal silica, the mechanical polishing force is larger than the chemical polishing force, and the surface roughness tends to be slightly worse.

However, as shown in Table 7, Examples 1 to 14 and Reference Examples 1 to 8 were compared with the conventional example (Comparative Example 1) and Comparative Examples 2 to 4, compared with the polishing rate, surface roughness, and scratches / scratches. The properties are all good and excellent. That is, according to the polishing composition for a sapphire substrate of the present invention, compared with the conventional polishing composition, the mechanical polishing action and the chemical effect can be achieved by the synergistic effect of the alkanolamine compound and the fluorine compound having a perfluoroalkyl group. Due to the interaction of the polishing action, the polishing rate is improved, the surface roughness of the surface to be polished is reduced, and an excellent quality polished surface free from scratches and scratches can be obtained. In addition, this invention is not limited to the alkanolamine compound and the fluorine compound which have a perfluoroalkyl group used for the Example.

  The polishing composition for a sapphire substrate and the polishing method for a sapphire substrate of the present invention can be used, for example, for polishing a sapphire substrate used as a substrate for growing an epitaxial film of a nitride semiconductor light emitting device.

Claims (9)

  1. Used when polishing a sapphire substrate, comprising both an alkanolamine compound and a fluorine-based compound having a perfluoroalkyl group, silica particles, and water,
    The weight ratio of (alkanolamine compound) / (fluorine-based compound having a perfluoroalkyl group) is, Ri 100-400 der,
    The silica particles are colloidal silica, the content of 5 to 50% by weight of the colloidal silica, the average particle diameter of the polishing composition for a sapphire substrate Ru 10~200nm der of the colloidal silica.
  2. The polishing composition for a sapphire substrate according to claim 1, wherein the alkanolamine compound is a general formula (1).
    (H) c N [(CH 2 ) a OH] b (1)
    [Wherein, a is an alkylene group of 2 to 5, b is 1 to 3, c is 0 to 2, provided that b + c = 3]
  3. 3. The sapphire according to claim 1, wherein the alkanolamine compound contains at least one compound composed of 2-hydroxyethylamine, 2,2′-dihydroxydiethylamine, 2,2 ′, 2 ″ -trihydroxytriethylamine. Polishing liquid composition for substrates.
  4. The polishing composition for a sapphire substrate according to any one of claims 1 to 3 , wherein the fluorine-based compound having a perfluoroalkyl group is a general formula (2).
    CF 3 (CF 2 ) n (CH 2 ) m X (2)
    [Wherein, n is 3 to 10, m is 1 to 3, X is an amino group, carboxylate, ammonium salt, amine oxide, betaine]
  5. The fluorine-based compound having a perfluoroalkyl group is at least selected from the group consisting of perfluoroalkyl amino acid salts, perfluoroalkyl carboxylates, perfluoroalkyltrialkylammonium salts, perfluoroalkylamine oxides, and perfluoroalkylbetaines. The polishing composition for sapphire substrates according to any one of claims 1 to 4 , comprising one kind of compound.
  6. pH is 9.5 or more and less than 11.5, Polishing liquid composition for sapphire substrates of any one of Claims 1-5 .
  7. The polishing composition for a sapphire substrate according to claim 6 , comprising at least one compound selected from the group consisting of inorganic alkali compounds and organic amines as an alkali component for adjusting the pH to 9.5 or more and less than 11.5. .
  8. Claims 1-7 for the sapphire substrate polishing composition according to any one of, and supplied to the polishing pad in the polishing process of the sapphire substrate, the polishing pad, wherein the unit load 150~500g / cm 2 A method for polishing a sapphire substrate that is pressed against a sapphire substrate for polishing.
  9. The temperature of the polishing composition for the sapphire substrate to be supplied to the polishing pad when the polishing pad is pressed against the sapphire substrate in the polishing step of the sapphire substrate is 20 to 30 ° C. The method for polishing a sapphire substrate according to 8 .
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JP5819589B2 (en) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド Method using polishing composition
MY163271A (en) 2011-07-08 2017-08-30 Ube Industries Method for producing ceramic composite for light conversion
CN102358825B (en) * 2011-08-05 2013-08-21 清华大学 Polishing composition for sapphire wafer
CN102343547A (en) * 2011-10-20 2012-02-08 天津理工大学 Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
KR102105844B1 (en) * 2012-08-24 2020-04-29 에코랍 유에스에이 인코퍼레이티드 Methods of polishing sapphire surfaces
US9896604B2 (en) 2013-03-15 2018-02-20 Ecolab Usa Inc. Methods of polishing sapphire surfaces
JP5997235B2 (en) * 2014-11-26 2016-09-28 アサヒ化成工業株式会社 Composite abrasive, manufacturing method thereof, polishing method and polishing apparatus
JP6425992B2 (en) * 2014-12-22 2018-11-21 花王株式会社 Polishing liquid composition for sapphire plate
US10377014B2 (en) 2017-02-28 2019-08-13 Ecolab Usa Inc. Increased wetting of colloidal silica as a polishing slurry

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