CN106346344A - Copper target material surface processing method - Google Patents
Copper target material surface processing method Download PDFInfo
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- CN106346344A CN106346344A CN201510417001.0A CN201510417001A CN106346344A CN 106346344 A CN106346344 A CN 106346344A CN 201510417001 A CN201510417001 A CN 201510417001A CN 106346344 A CN106346344 A CN 106346344A
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- target material
- copper target
- technique
- polishing
- processing method
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a copper target material surface processing method. The method includes the steps that a copper target material is provided and comprises a copper target material mirror surface; the copper target material mirror surface is machined; polishing processing is carried out on the machined copper target material mirror surface and includes two times of polishing processes. At least two times of polishing processes are adopted after machining, surface processing is carried out on the copper target material mirror surface, and scratches formed on the surface of the copper target material mirror surface by machining and an oxidation layer formed on the copper target material mirror surface by machining remaining liquid are removed by the polishing processes, so that surface glossiness and roughness of the copper target material mirror surface are higher, and the repair rate and rejection rate of the copper target material are reduced.
Description
Technical field
The present invention relates to target manufacture field, more particularly, to a kind of processing method of target material surface.
Background technology
Metal targets are one of most important raw material, the manufactures of liquid crystal display during liquid crystal display manufactures
Commonly used physical gas-phase deposition, in processes of physical vapor deposition, the argon ion that ionization is formed exists
Accelerate in the presence of electric field, the argon ion bombardment metal targets of acceleration form a large amount of target atom, sputter
A large amount of target atom be deposited on substrate formation thin film.
In actual manufacture process, the roughness on metal targets surface can affect stablizing of target as sputter speed
Property, and then lead to the uneven film thickness being formed on substrate even, steady therefore in order to ensure film quality
Qualitative, need to carry out mirror process to improve the fineness on metal targets surface to metal targets.
Taking the metal targets of copper product as a example, at present the mirror processing method that copper target material is commonly used is added for machinery
The method of work.But by machining, copper target material minute surface being carried out processing easily makes copper target material scrap, and causes
The yield of copper target material is relatively low, does not meet the demand of the manufacturing.
Content of the invention
The problem that the present invention solves is to provide a kind of processing method of copper target material surface, to improve copper target material
Yield.
For solving the above problems, the present invention provides a kind of processing method of copper target material surface.Walk including following
Rapid:
There is provided copper target material, described copper target material includes copper target material minute surface；
Machining is carried out to described copper target material minute surface；
, being processed by shot blasting, described polishing is included at least twice to the copper target material minute surface after machining
Glossing.
Optionally, described polishing includes three glossings, is finished to rough polishing technique for the first time,
It is finished to fine polishing technique for the second time, be finished to finishing polish technique for the third time, described rough polishing technique, thin
Glossing and finishing polish technique adopt the ascending polished part of screen size successively, make copper target material surface
Roughness taper into.
Optionally, described polishing includes polishing twice, is finished to rough polishing technique for the first time, and second
Secondary be finished to finishing polish technique, described rough polishing technique and finishing polish technique adopt screen size successively by little
To big polished part, the roughness of copper target material surface is made to taper into.
Optionally, the polished part that described rough polishing technique adopts is the throwing to 400 mesh for 200 mesh for screen size
Light flannelette.
Optionally, the polished part that described fine polishing technique adopts is the throwing to 400 mesh for 200 mesh for screen size
Light flannelette and screen size are the scouring pad to 1000 mesh for 600 mesh.
Optionally, described finishing polish technique includes the first finishing polish technique carrying out successively and the second finishing polish
Technique；Described first finishing polish technique removes the lathe tool lines of described copper target material minute surface, and described second essence is thrown
Light technique reduces the roughness of copper target material minute surface after the first finishing polish technique.
Optionally, the polished part that described first finishing polish technique adopts is sand paper, the sieve aperture of described polished part
A size of 600 mesh are to 1000 mesh.
Optionally, the polished part that described second finishing polish technique adopts is scouring pad, the sieve of described polished part
Hole a size of 600 mesh is to 1000 mesh.
Optionally, the polishing fluid that described polishing adopts is the mixing of diamond abrasive and organic solvent
Liquid.
Optionally, described organic solvent is second third ethanol or anhydrous alcohol.
Optionally, described machining includes roughing, finished profile and the semifinishing carrying out successively.
Compared with prior art, technical scheme has the advantage that the present invention in machining
Using glossing at least twice, described copper target material minute surface is surface-treated afterwards, described glossing goes
Except the scuffing being machined in the formation of copper target material minute surface, also remove machining residual liquid in described copper target
The oxide layer that material minute surface is formed, so that the surface color degree of copper target material minute surface being formed and roughness are more preferably,
And then reduce repair rate and the scrappage of copper target material.
In alternative, described finishing polish technique includes the first finishing polish technique carrying out successively and the second essence
Glossing.Described first finishing polish technique removes the irregular lathe tool lines of described copper target material minute surface,
Described copper target material minute surface forms the lines of orientation normalization and visual homogeneity, and described second finishing polish technique subtracts
The roughness of copper target material minute surface after little first finishing polish technique, so that the copper target material minute surface finally giving is thick
Rugosity meets preassigned.
Further, compared with machining, the process time that glossing is spent is shorter, and the present invention is led to
Cross and glossing is replaced some mechanical processing, shorten the cycle of whole copper target material mirror process, improve
The production efficiency of copper target material.
Brief description
Fig. 1 is the schematic flow sheet of processing method one embodiment of copper target material surface of the present invention；
Fig. 2 is the schematic flow sheet of step s2 in Fig. 1；
Fig. 3 is the schematic flow sheet of step s3 in Fig. 1；
Fig. 4 is the schematic flow sheet of step s33 in Fig. 3；
Fig. 5 is the schematic flow sheet of another embodiment of processing method of copper target material surface of the present invention.
Specific embodiment
The mirror processing method of existing copper target generally adopts mechanical processing method, and the method is easily caused copper target
Reprocessing or scrapping of material, analyzes its reason and is: it is difficult that mechanical processing process easily produces to copper target material minute surface
With the scuffing repaired, and the residual liquids such as oil stain and cutting fluid after machining, it have been also easy to, described residual
Liquid is serious to the oxidation of copper target material and is difficult to remove, and the copper target material minute surface made using machining is difficult to
Reach that surface roughness is consistent with color, and then lead to reprocessing or scrapping of copper target material.
In order to solve the above problems, the present invention provides a kind of processing method of copper target material surface, comprising: right
Copper target material minute surface carries out machining；Then the copper target material minute surface after machining is processed by shot blasting,
Described polishing includes glossing at least twice.
The present invention, by copper target material minute surface is carried out with glossing at least twice, removes and is machined in copper target
The scuffing that material specular surface is formed, also removes what machining residual liquid was formed in described copper target material minute surface
Oxide layer, so that the surface color degree of copper target material minute surface being formed and roughness are more preferably, and then ensure that
The quality of copper target material, reduces repair rate and the scrappage of copper target material.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
Refer to Fig. 1, Fig. 1 is the schematic flow sheet of processing method one embodiment of copper target material surface of the present invention,
The mirror processing method of copper target material provided by the present invention includes following basic step:
Step s1: provide copper target material, described copper target material includes copper target material minute surface；
Step s2: machining is carried out to described copper target material minute surface；
Step s3:, being processed by shot blasting, described polishing includes to the copper target material minute surface after machining
Glossing at least twice.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.
Step s1 is first carried out, copper target material is provided, described copper target material includes copper target material minute surface.
In the prior art, the technique forming Copper thin film includes membrane deposition method.Described thin film deposition side
Method is: is passed through working gas in vacuum cavity, described working gas transfers electricity in forceful electric power field action, produces
Raw substantial amounts of cation；Described cation, in the presence of highfield acceleration, bombards copper target material；When sun from
When the kinetic energy of son exceedes the combination energy of copper target atom, copper atom just departs from copper target material surface, is splashed to sun
On the silicon chip of pole, it is deposited into Copper thin film.
Described Copper thin film needs to meet certain thickness evenness and requires, and the roughness meeting of copper target material surface
The stability of impact target as sputter speed, and then impact is deposited on the thickness evenness of the Copper thin film on silicon chip,
Therefore in order to ensure the stability of Copper thin film quality, need to carry out surface to copper target material to process, formed
The copper target material minute surface of low roughness.
In the present embodiment, the original size of the length x width x thickness of copper target material to be processed is 2050 ×
1040 × 20 (unit is millimeter), the target size of the length x width x thickness of the copper target material after processing
For 2030 × 1020 × 14.2 (unit is millimeter), and the copper target material minute surface roughness predetermined value after processing is
Less than 0.2mm.
Secondly, execution step s2, carries out machining to the minute surface of described copper target material, in machining mistake
Adopt in journey pure oil type cutting fluid, water-soluble metalworking liquid or anhydrous alcohol as cutting fluid with play cooling and
The effect of lubrication.
In actual applications, described machining is segmented into multiple operations to complete.Specifically, tie
Close with reference to shown in Fig. 2, described machining can include following each operation: s21, to described copper target material mirror
Face carries out roughing；S22, carries out finished profile to described copper target material minute surface；S23, to described copper target
Material minute surface carries out semifinishing.
In conjunction with reference to shown in Fig. 2, now above-mentioned each technique is described in detail.
In s21, copper target material minute surface to be processed is carried out with roughing, the cutting of rapid, high volume ground removes described
Most of surplus of copper target material minute surface, makes described copper target material form preliminary configuration.
Specifically, described copper target material to be processed is arranged on the main shaft of lathe, set lathe rotating speed as
400 revolutions per seconds to 600 revolutions per seconds, start lathe after, lathe cutter head by 200 millimeters per minute/go to 500 millimeters/
The amount of feeding turning carries out roughing to described copper target material minute surface to be processed, and described lathe cutter head often carries out one
The cutting output of knife cutting is 1 millimeter to 3 millimeters.
In the present embodiment, lathe cutter head is entered to described copper target material minute surface by 500 millimeters per minute/turns of the amount of feeding
Row roughing, sets lathe cutter head and often carries out imposing uniformity without examining individual cases the cutting output cut as 1 millimeter, described roughing is entered altogether
The Cutting Process of row 4 knife, then, after described roughing, the thickness of described copper target material is changed into 20-1 × 4=16
Millimeter.
In s22, carry out finished profile to completing rough machined described copper target material, remove described copper target material
The part surplus of side, obtains the semi-finished product similar to final product.
Specifically, adjustment lathe rotating speed is 400 revolutions per seconds to 1000 revolutions per seconds, after starting lathe, lathe cutter head
By 50 millimeters per minute/go to 200 millimeters/turn the amount of feeding remove described copper target material side part surplus,
Described lathe cutter head often carries out imposing uniformity without examining individual cases the cutting output cut for 10 millimeters to 20 millimeters.
In the present embodiment, set lathe cutter head and often carry out imposing uniformity without examining individual cases the cutting output cut as 10 millimeters, described essence
Processing profile carries out the Cutting Process of 2 knives, then after described finished profile, the length of described copper target material altogether
Degree is changed into 2050-10 × 2=2030 millimeter, and width is changed into 1040-10 × 2=1020 millimeter.
In s23, the described copper target material minute surface completing finished profile is carried out with semifinishing, remove described
The fraction surplus of copper target material minute surface.
Specifically, adjustment lathe rotating speed is 300 revolutions per seconds to 800 revolutions per seconds, and after starting lathe, lathe cutter head is pressed
100 millimeters per minute/go to 300 millimeters/turn the amount of feeding to the described copper target material mirror completing finished profile
Face carries out semifinishing, removes the fraction surplus of described copper target material minute surface, and described lathe cutter head is often carried out
The cutting output cut of imposing uniformity without examining individual cases is 0.1 millimeter to 0.5 millimeter.
In the present embodiment, set lathe cutter head and often carry out imposing uniformity without examining individual cases the cutting output cut as 0.3 millimeter, described half
Polish carries out the Cutting Process of 6 knives altogether, then, after described semifinishing, the thickness of described copper target material becomes
For 16-0.3 × 6=14.2 millimeter, it is finally reached the target dimension values of the length x width x thickness of copper target material.
Then execution step s3, is processed by shot blasting to the described copper target material minute surface completing machining, institute
State polishing and include glossing at least twice, be machined in copper target material specular surface shape for removing
The scuffing becoming, also removes the oxide layer that machining residual liquid is formed in described copper target material minute surface, thus
Make the surface color degree of described copper target material minute surface and roughness more preferably, so reduce copper target material repair rate and
Scrappage.
In the present embodiment, described glossing is using diamond abrasive and organic solvent mixed liquor as polishing
Liquid；In order to ensure that after polishing, described copper target material minute surface does not produce organic solvent residual, therefore need to select
There is volatility and the moderate organic solvent of evaporation rate, specifically, described organic solvent can be second third
Ethanol or anhydrous alcohol.
The requirement of the surface roughness according to described copper target material minute surface, according to ascending suitable of screen size
Sequence changes polished part, is polished technique to described copper target material minute surface successively；Screen size is bigger, is formed
Copper target material minute surface roughness lower, therefore pass through to adopt the ascending polished part of screen size successively,
The roughness of copper target material minute surface is made to be gradually reduced.
In the present invention, described polishing can include three glossings.Specifically, in conjunction with ginseng
Examine shown in Fig. 3, described three glossings can include following each operation: s31, to described copper target material mirror
Face carries out rough polishing technique；S32, carries out fine polishing technique to described copper target material minute surface；S33, to described
Copper target material minute surface carries out finishing polish technique.Described rough polishing technique, fine polishing technique and finishing polish technique according to
The ascending polished part of secondary employing screen size, makes the roughness of copper target material surface be gradually reduced.
In conjunction with reference to shown in Fig. 3, now above-mentioned each technique is described in detail.
In the rough polishing technique of s31, screen size is provided to be the polishing flannelet to 400 mesh for 200 mesh, fixing
Copper target material, described polishing flannelet is positioned on described copper target material minute surface, with diamond abrasive and having
Machine solvent mixed liquor as polishing fluid, manually by described polishing flannelet from an edge of copper target material along parallel
First direction in described copper target material moves back and forth and is polished, and described polishing flannelet is along perpendicular to institute simultaneously
The second direction stating first direction moves back and forth, and carries out rough polishing technique to described copper target material minute surface.Pass through
Described rough polishing technique, make the lines of described copper target material minute surface evenly, finer and smoother.
In the present embodiment, the polishing flannelet being 320 mesh using screen size is as polished part to described copper target material
Minute surface carries out rough polishing technique, and after rough polishing technique, the roughness of described copper target material minute surface can reach
Below 0.4mm.
In the fine polishing technique of s32, successively using the scouring pad that polishing flannelet and screen size are bigger, with
Diamond abrasive and organic solvent mixed liquor as polishing fluid, to the described copper target completing rough polishing technique
Material minute surface carries out fine polishing technique.The concrete technology of described s32 is similar with the concrete technology of above-mentioned s31.
Specifically, it is 200 mesh to 400 mesh that the polished part that described fine polishing technique adopts is followed successively by screen size
Polishing flannelet and screen size be the scouring pad to 1000 mesh for 600 mesh.First it is directed to using described polishing flannelet
The surface roughness of copper target material minute surface and the poor region of glossiness carry out local fine polishing；Then clean by hundred
Lay and be placed on described copper target material minute surface, manually that described scouring pad is flat from the edge edge of copper target material
Row moves back and forth and is polished in the first direction of described copper target material, and described scouring pad is along perpendicular to institute simultaneously
The second direction stating first direction moves back and forth, and carries out fine polishing technique to described copper target material minute surface, makes institute
The surface chromatic aberration stating copper target material minute surface is uniform.
In the present embodiment, first it is directed to the surface of copper target material minute surface using the polishing flannelet that screen size is 320 mesh
Roughness and the poor region of glossiness carry out local fine polishing, then adopt screen size to be 800 purposes hundred
Clean cloth, carries out fine polishing technique to whole copper target material minute surface.
It should be noted that the present embodiment is successively using the scouring pad pair that polishing flannelet and screen size are bigger
Described copper target material minute surface carries out fine polishing, but is not limited only to this.Thick according to the surface of described copper target material minute surface
Rugosity and color situation, can only with polishing flannelet or only with scouring pad to described copper target material minute surface
Carry out fine polishing technique.
In s33, finishing polish technique is carried out to the described copper target material minute surface completing fine polishing technique.Using gas
Move or electric polisher, described pneumatically or electrically buffing machine surface is pasted polished part, described polished part is put
It is placed on described copper target material minute surface, by described polished part from an edge of copper target material along parallel to described copper
The first direction of target moves back and forth and is polished, and described copper target material is along perpendicular to described first direction simultaneously
Second direction move back and forth, finishing polish technique is carried out to described copper target material minute surface, so that described copper target
While the roughness of material minute surface reaches preassigned, remove surface tear and the oxygen of described copper target material minute surface
Change layer.
Specifically, described finishing polish technique can include finishing polish twice.In conjunction with reference to shown in Fig. 4, described
Finishing polish twice can include following each operation: s331, carries out the first finishing polish to described copper target material minute surface
Technique；S332, carries out the second finishing polish technique to described copper target material minute surface.
In conjunction with reference to shown in Fig. 4, now above-mentioned each technique is described in detail.
In the first finishing polish technique of s331, using pneumatically or electrically buffing machine, described pneumatically or electrically
It is the sand paper to 1000 mesh for 600 mesh that screen size is pasted on buffing machine surface, using described sand paper to described copper target
Material minute surface carries out the first finishing polish technique, thus removing the irregular lathe tool lines of described copper target material minute surface,
Form the polishing lines of orientation normalization and visual homogeneity in described copper target material minute surface.
In the present embodiment, the polished part that described first finishing polish technique adopts is the sand that screen size is 800 mesh
Paper.Concrete technology can be: using pneumatically or electrically buffing machine, described pneumatically or electrically buffing machine surface
Paste described sand paper, described sand paper is positioned on described copper target material minute surface, by described sand paper from copper target material
Edge move back and forth along the first direction parallel to described copper target material and be polished, described copper simultaneously
Target moves back and forth along perpendicular to the second direction of described first direction, and described copper target material minute surface is carried out with the
One finishing polish technique.
In the second finishing polish technique of s332, using pneumatically or electrically buffing machine, described pneumatically or electrically
It is the scouring pad to 1000 mesh for 600 mesh that screen size is pasted on buffing machine surface, using described scouring pad to described
Copper target material minute surface carries out the second finishing polish technique so that the bright color and luster of described copper target material minute surface consistent,
Lines is finer and smoother, and surface no scratches or aoxidizes, and surface roughness reaches below 0.2mm.
In the present embodiment, described second finishing polish technique adopt polished part be screen size be 800 purposes hundred
Clean cloth.Concrete technology can be: using pneumatically or electrically buffing machine, described pneumatically or electrically buffing machine table
Described scouring pad is pasted in face, described scouring pad is positioned on described copper target material minute surface, by described scouring pad
Move back and forth along the first direction parallel to described copper target material from an edge of copper target material and be polished, with
Shi Suoshu copper target material moves back and forth along the second direction perpendicular to described first direction, to described copper target material mirror
Face carries out the second finishing polish technique.
In the present invention, when being processed by shot blasting, adopt the ascending polished part of screen size successively.As
The screen size of the polished part that really each glossing adopts is excessive, and described copper target material minute surface can be led to polished
The preassigned that rear lines uniformity is deteriorated, surface roughness difficult to reach is less than 0.2 μm, the drawing of surface
Wound or oxide layer are difficult to be removed；If the screen size of polished part too small although can be thrown by increase
The light time is until reach roughness predetermined value, but accordingly also can cause the increase of copper target material manufacturing cost, system
Make the reduction of efficiency.Therefore, described polishing adopts the ascending polished part of screen size successively,
The roughness of copper target material surface is made to taper into.
By described polishing, while effectively removing described copper target material minute surface scuffing or oxide layer,
The surface color degree obtaining minute surface is consistent, and minute surface roughness is less than 0.2 μm of copper target material.
In other embodiments of the invention, described glossing can also include polishing twice.
Specifically, when the surface color degree of the described copper target material minute surface after rough polishing technique is more uniform,
Finishing polish technique can directly be carried out after rough polishing technique.In conjunction with reference to shown in Fig. 5, described glossing twice
Following each operation: s51 can be included, rough polishing technique is carried out to described copper target material minute surface；S52, to institute
State copper target material minute surface and carry out finishing polish technique.The present embodiment be the difference is that only with previous embodiment, saves
Go fine polishing technique.Wherein, the rough polishing technique of the present embodiment, finishing polish technique all with aforementioned enforcement
Example is identical, will not be described here.
By machining and glossing, not only obtain the copper target material that size meets predetermined value, also
Effect ground removing the scuffing of described copper target material minute surface or oxide layer, the surface color degree obtaining minute surface is consistent,
Surface roughness is less than 0.2 μm of copper target material.
Although the present invention is own being disclosed as above with preferred embodiment, the present invention is not limited to this.Any
Skilled person, without departing from the spirit and scope of the present invention, all can make various changes or modifications,
Therefore protection scope of the present invention should be defined by claim limited range.
Claims (11)
1. a kind of processing method of copper target material surface is it is characterised in that include:
There is provided copper target material, described copper target material includes copper target material minute surface；
Machining is carried out to described copper target material minute surface；
, being processed by shot blasting, described polishing is included at least twice to the copper target material minute surface after machining
Glossing.
2. the processing method of copper target material surface as claimed in claim 1 is it is characterised in that described polishing
Including three glossings, it is finished to rough polishing technique for the first time, be finished to fine polishing technique for the second time,
Third time is finished to finishing polish technique, and described rough polishing technique, fine polishing technique and finishing polish technique are successively
Using the polished part that screen size is ascending, the roughness of copper target material surface is made to taper into.
3. the processing method of copper target material surface as claimed in claim 1 is it is characterised in that described polishing
Including polishing twice, it is finished to rough polishing technique for the first time, be finished to finishing polish technique for the second time, described
Rough polishing technique and finishing polish technique adopt the ascending polished part of screen size successively, make copper target material table
The roughness in face tapers into.
4. the processing method of copper target material surface as claimed in claim 2 or claim 3 is it is characterised in that described rough polishing
The polished part that light technique adopts is the polishing flannelet to 400 mesh for 200 mesh for screen size.
5. the processing method of copper target material surface as claimed in claim 2 is it is characterised in that described fine polishing work
Skill adopt polished part be screen size be 200 mesh to 400 mesh polishing flannelet and screen size be 600
Mesh to 1000 mesh scouring pad.
6. the processing method of copper target material surface as claimed in claim 2 or claim 3 is it is characterised in that described essence is thrown
Light technique includes the first finishing polish technique carrying out successively and the second finishing polish technique；Described first finishing polish
Technique removes the lathe tool lines of described copper target material minute surface, and described second finishing polish technique reduces the first finishing polish
The roughness of copper target material minute surface after technique.
7. the processing method of copper target material surface as claimed in claim 6 is it is characterised in that described first essence is thrown
The polished part that light technique adopts is sand paper, and the screen size of described polished part is 600 mesh to 1000 mesh.
8. the processing method of copper target material surface as claimed in claim 6 is it is characterised in that described second essence is thrown
The polished part that light technique adopts is scouring pad, and the screen size of described polished part is 600 mesh to 1000 mesh.
9. the processing method of copper target material surface as claimed in claim 1 is it is characterised in that described polishing
Using polishing fluid be diamond abrasive and organic solvent mixed liquor.
10. the processing method of copper target material surface as claimed in claim 9 is it is characterised in that described organic solvent
For second third ethanol or anhydrous alcohol.
The processing method of 11. copper target material surfaces as claimed in claim 1 is it is characterised in that described machining
Including the roughing carrying out successively, finished profile and semifinishing.
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| CN201510417001.0A CN106346344A (en) | 2015-07-15 | 2015-07-15 | Copper target material surface processing method |
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| CN111958333A (en) * | 2020-08-14 | 2020-11-20 | 合肥江丰电子材料有限公司 | Polishing process of neodymium-aluminum target sputtering surface |
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