CN113182941A - Automatic polishing process method of copper-containing target material - Google Patents
Automatic polishing process method of copper-containing target material Download PDFInfo
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- CN113182941A CN113182941A CN202110474296.0A CN202110474296A CN113182941A CN 113182941 A CN113182941 A CN 113182941A CN 202110474296 A CN202110474296 A CN 202110474296A CN 113182941 A CN113182941 A CN 113182941A
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- target material
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- copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/006—Machines or devices using grinding or polishing belts; Accessories therefor for special purposes, e.g. for television tubes, car bumpers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/18—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/18—Accessories
- B24B21/20—Accessories for controlling or adjusting the tracking or the tension of the grinding belt
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an automatic polishing process method of a copper-containing target material, which comprises the following steps: and automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing working procedures, and the granularity of abrasive belts used for polishing is gradually reduced to obtain the polished copper-containing target material. The process method adopts abrasive belts of different models to automatically polish the sputtering surface of the target according to the selection of the material of the target, the granularity of the used abrasive belts is sequentially reduced, and the controllability of the roughness of the polished sputtering surface is ensured through the control of the polishing process parameters, so that the roughness of the sputtering surface of the copper-containing target can reach 0.2-0.3 mu m, and the subsequent use requirements are met; the polishing process is carried out automatically, the stability is good, manual operation is reduced, the production efficiency is improved, and the yield of target production can be improved.
Description
Technical Field
The invention belongs to the technical field of target preparation, and relates to an automatic polishing process method of a copper-containing target.
Background
With the rapid development of the semiconductor industry, the demand of coating materials as important materials for manufacturing semiconductor electronic devices is increasing. The target material is used as an important coating material and has wide application in the fields of integrated circuits, flat panel displays, solar energy, optical devices and the like, the most common method for preparing films by using the target material comprises a sputtering coating method, and in order to ensure the excellent performance of film products, the characteristics of the target material such as structure and the like are required, so that the preparation process of the target material needs to be controlled to obtain the target material meeting the sputtering requirement.
Polishing treatment is one of important operation steps in the target preparation process, and has important influence on the surface performance of the target, such as parameters of roughness, flatness and the like, however, the existing polishing process often causes unstable surface roughness and uneven color, the polishing efficiency during manual operation or semi-automatic operation is low, the polishing parameters need to be adjusted according to different target materials, however, the parameters are difficult to accurately adjust through manual operation, the process stability is poor, and the product yield is reduced, so that a proper automatic polishing process needs to be selected for different targets, and the production efficiency and the product quality are improved.
CN 111975465a discloses a polishing process of a sputtering surface of a molybdenum target, which comprises a first mechanical polishing, a second mechanical polishing, a third mechanical polishing and a fourth mechanical polishing which are sequentially performed; the feeding speed in the first mechanical polishing is 2-3 m/min; the feeding speed in the second mechanical polishing is 4-5 m/min; the feeding speed in the third mechanical polishing is 6-8 m/min; the feeding speed in the fourth mechanical polishing is 7-9 m/min, the polishing process mainly polishes the sputtering surface of the molybdenum target, the main control parameter is the feeding speed of each stage of polishing, and the selection of the processing height is not disclosed and the adopted polishing equipment is not disclosed.
CN 107866721a discloses a processing method of a target assembly, comprising: providing a target blank with a surface to be processed; adopting an abrasive belt to automatically polish the surface to be processed to form a sputtering surface; although the processing method comprises automatic polishing treatment, the types of the target materials are not clearly treated, the disclosed processes of rough polishing, fine polishing and the like do not clearly define the processing height and the feeding speed, the processing time is long, the process is simpler, and accurate processing is difficult to realize.
In summary, for some specific types of targets, a proper automatic polishing process needs to be selected according to material characteristics, and a better polishing effect is achieved by matching with the operation of polishing equipment.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide an automatic polishing process method of a copper-containing target, which adopts abrasive belts of different types to automatically polish the sputtering surface of the target according to the selection of the material of the target, the granularity of the used abrasive belts is sequentially reduced, and the roughness of the polished target is ensured by controlling the parameters of the polishing process so as to meet the subsequent use requirements.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an automatic polishing process method of a copper-containing target material, which comprises the following steps:
and automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing working procedures, and the granularity of abrasive belts used for polishing is gradually reduced to obtain the polished copper-containing target material.
According to the automatic polishing process of the target, corresponding polishing processes are different according to different target materials, abrasive belts are in contact with the sputtering surface of the target according to the structure of automatic polishing equipment, different abrasive belts are selected, a plurality of polishing procedures are selected according to different abrasive particle sizes, the particle size is reduced in sequence, the rough polishing treatment is transited to the fine polishing treatment, and then the fine polishing treatment is carried out, so that the flatness of the polished sputtering surface is ensured, and the target meeting the sputtering requirement is obtained; the polishing process is carried out automatically, the stability is good, manual operation is reduced, the production efficiency is improved, and the target material qualified rate is improved.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
As a preferred technical scheme of the invention, the copper-containing target is combined with a back plate to form a target assembly before automatic polishing.
Preferably, the copper-containing target comprises a copper target or a copper alloy target.
Preferably, the back plate comprises a copper back plate or a stainless steel back plate.
In the invention, the target is usually a strip-shaped target, the length of the target can reach 1000-5000 mm generally, the time required by manual polishing is longer, and the polishing uniformity is poorer, so that the invention adopts an automatic polishing process; the copper-containing target material is a simple substance target material or an alloy target material which takes copper as a main element.
As a preferable technical scheme of the invention, in the automatic polishing process, the target moves along with a conveyor belt of the automatic polishing equipment, and the sputtering surface of the target faces upwards.
Preferably, the abrasive belt rotates around a grinding wheel of the automatic polishing equipment, and the grinding wheel is positioned above the target material.
Preferably, the contact position of the target and the abrasive belt, the linear velocity direction of the abrasive belt and the motion direction of the target are parallel.
According to the automatic polishing device, 2-3 grinding wheels are arranged in the automatic polishing device, the abrasive belts are wound on the outer sides of the two grinding wheels and are driven to rotate by the grinding wheels, and the bottom positions of the abrasive belts are in contact friction with a sputtering surface of a target according to the position relation of the grinding wheels and a conveyor belt; meanwhile, compression rollers are arranged above the conveyor belt and in the front and rear positions of the grinding wheel along the movement direction of the conveyor belt, for example, double-chuck compression rollers are selected, the compression rollers are not in direct contact with the target material, but the distance between the compression rollers and the target material is small, so that the target material is prevented from jumping and popping up due to the transmission inertia of the abrasive belt after the target material workpiece is machined, and the height of the compression rollers can be adjusted to adapt to machining of target material assemblies with different thicknesses.
As a preferable technical scheme of the invention, the abrasive belt in the automatic polishing process is a super-coating abrasive belt.
The super-coating abrasive belt is formed by adding a super-coating on the basis of a common abrasive belt, the super-coating is formed by coating super-coating slurry on the surface of the abrasive belt, the super-coating slurry is formed by compounding various raw materials and comprises heat absorption powder, lubricating powder, bonding components and the like, the abrasive belt can be made of silicon carbide, aluminum oxide and the like, and the super-coating abrasive belt is selected to mainly reduce the surface temperature of a target material during working and prevent burning of the target material workpiece, and meanwhile, the super-coating abrasive belt has the advantages of lubrication, static electricity removal, blockage prevention, wear resistance, long service life and the like.
Preferably, the particle size of the abrasive belt is the particle size of the abrasive in the abrasive belt.
Preferably, the grain size numbers of the abrasive belts used in the four procedures of the automatic polishing process are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence.
In the invention, the type of the abrasive belt refers to the mesh number of abrasive materials of the abrasive belt, and the larger the mesh number is, the smaller the granularity of the abrasive materials is, and the finer the polishing process is.
Preferably, after the automatic polishing process is completed, the scouring pad is used for manual polishing.
Preferably, the manual polishing comprises a process, and the used scouring pad is 2000# scouring pad.
In a preferred embodiment of the present invention, in the first polishing step, the target transport speed is 3.6 to 4m/min, for example, 3.6m/min, 3.7m/min, 3.8m/min, 3.9m/min, or 4m/min, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable; the rotation speed of the sanding belt is 8-12 m/min, such as 8m/min, 9m/min, 10m/min, 11m/min or 12m/min, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the working height of the first polishing step is adjusted to be 0.2 to 0.3mm, for example, 0.2mm, 0.22mm, 0.24mm, 0.25mm, 0.27mm, 0.28mm, or 0.3mm, based on the initial thickness of the target, but is not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the first polishing process is performed twice on the sputtering surface of the target.
Preferably, after the target is processed once, the target is retreated to the initial position along with the conveyor belt and then polished again.
In the invention, the abrasive belt used in the first procedure has larger granularity, is mainly used for rough polishing, and can play a role in verifying the processing effect of the automatic polishing machine and determining the processing precision.
In a preferred embodiment of the present invention, in the second polishing step, the target material transfer speed is 3.4 to 3.8m/min, such as 3.4m/min, 3.5m/min, 3.6m/min, 3.7m/min, or 3.8m/min, but not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable; the rotation speed of the sanding belt is 8-12 m/min, such as 8m/min, 9m/min, 10m/min, 11m/min or 12m/min, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the processing height of the second polishing step is adjusted downward by 0.12 to 0.18mm, such as 0.12mm, 0.13mm, 0.14mm, 0.15mm, 0.16mm, or 0.18mm, on the basis of the first polishing step, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
Preferably, the second polishing process is performed twice on the sputtering surface of the target.
Preferably, after the target is processed once, the target is retreated to the initial position along with the conveyor belt and then polished again.
In a preferred embodiment of the present invention, in the third polishing step, the target transport speed is 3.3 to 3.7m/min, for example, 3.3m/min, 3.4m/min, 3.5m/min, 3.6m/min, or 3.7m/min, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable; the rotation speed of the sanding belt is 8-12 m/min, such as 8m/min, 9m/min, 10m/min, 11m/min or 12m/min, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the processing height of the third polishing step is adjusted downward by 0.07 to 0.12mm, for example, 0.07mm, 0.08mm, 0.09mm, 0.1mm, 0.11mm, or 0.12mm, on the basis of the second polishing step, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the third polishing process is performed once on the sputtering surface of the target.
In a preferred embodiment of the present invention, in the fourth polishing step, the target transport speed is 3.3 to 3.7m/min, such as 3.3m/min, 3.4m/min, 3.5m/min, 3.6m/min, or 3.7m/min, but not limited to the above-mentioned values, and other values not listed in the above-mentioned value range are also applicable; the rotation speed of the sanding belt is 8-12 m/min, such as 8m/min, 9m/min, 10m/min, 11m/min or 12m/min, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the processing height of the fourth polishing step is adjusted to 0.05 to 0.08mm, for example, 0.05mm, 0.055mm, 0.06mm, 0.065mm, 0.07mm, 0.075mm, or 0.08mm, based on the third polishing step, but the method is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the fourth polishing process is performed once on the sputtering surface of the target.
In the invention, before automatic polishing is carried out by adopting various types of abrasive belts, the thickness of the target material needs to be measured firstly to adjust the automatic polishing equipment and set the parameters of the target material polishing, the moving speed of the target material can be properly adjusted during multiple times of processing, the moving speed of the abrasive belts is basically consistent, the processing height of each time is adjusted according to the thickness of the target material and the difference of the used abrasive belts, the reduction of the thickness of the processed target material is controlled, and the controllability of the surface roughness after polishing is ensured.
In a preferred embodiment of the present invention, the number of times of polishing in the manual polishing step is at least one, for example, one, two, three, or four times.
Preferably, the roughness of the sputtered surface of the copper-containing target after polishing is 0.2 to 0.3 μm, for example, 0.2 μm, 0.22 μm, 0.24 μm, 0.26 μm, 0.28 μm, or 0.3 μm, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
In the invention, the final polishing procedure adopts scouring pad for fine polishing treatment, the operation can be completed manually, and the sputtering surface of the target material is ground uniformly.
As a preferable technical scheme of the invention, the process method comprises the following steps:
automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing procedures, all polishing procedures are carried out by using super-coating abrasive belts, the granularity of the used abrasive belts is 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, then, one manual polishing procedure is carried out by adopting scouring pad, the used scouring pad is 2000# scouring pad, and the polished copper-containing target material is obtained;
in the first polishing procedure, the target material conveying speed is 3.6-4 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is adjusted to be 0.2-0.3 mm on the basis of the initial thickness of the target material, and the machining times are twice;
in the second polishing procedure, the target material conveying speed is 3.4-3.8 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.12-0.18 mm on the basis of the first polishing procedure, and the machining times are twice;
in the third polishing procedure, the target material conveying speed is 3.3-3.7 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.07-0.12 mm on the basis of the second polishing procedure, and the machining times are once;
in the fourth polishing procedure, the target material conveying speed is 3.3-3.7 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.05-0.08 mm on the basis of the third polishing procedure, and the machining times are once;
the number of times of the manual polishing procedure is at least one, and the roughness of the sputtering surface of the copper-containing target material after polishing is 0.2-0.3 mu m.
Compared with the prior art, the invention has the following beneficial effects:
(1) the process method adopts abrasive belts of different models to automatically polish the sputtering surface of the target according to the selection of the material of the target, the granularity of the used abrasive belts is sequentially reduced, and the controllability of the roughness of the polished sputtering surface is ensured through the control of the polishing process parameters, so that the roughness of the sputtering surface of the copper-containing target can reach 0.2-0.3 mu m, and the subsequent use requirements are met;
(2) the polishing process is carried out automatically, the stability is good, manual operation is reduced, the production efficiency is improved, and the yield of target production can be improved to more than 99.5%.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The specific embodiment of the invention provides an automatic polishing process method of a copper-containing target material, which comprises the following steps:
and automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing working procedures, and the granularity of abrasive belts used for polishing is gradually reduced to obtain the polished copper-containing target material.
The following are typical but non-limiting examples of the invention:
example 1:
the embodiment provides an automatic polishing process method of a copper target, which comprises the following steps:
automatically polishing the sputtering surface of a copper target by using an automatic polishing machine, wherein the copper target is welded with a copper back plate to form a target assembly, the automatic polishing process comprises four polishing procedures, and super-coating abrasive belts are used for polishing, the grain sizes of the abrasive belts used in the four procedures are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, and then, a manual polishing procedure is carried out by using 2000# scouring cloth;
in the first polishing procedure, the target material conveying speed is 3.8m/min, the abrasive belt rotating speed is 10m/min, the processing times are two times, and the reduction of the target material height is 0.25 mm;
in the second polishing procedure, the target material conveying speed is 3.6m/min, the abrasive belt rotating speed is 10m/min, the processing times are two times, and the reduction amount of the target material height is 0.15 mm;
in the third polishing procedure, the target material conveying speed is 3.5m/min, the abrasive belt rotating speed is 10m/min, the processing times are one time, and the reduction amount of the target material height is 0.1 mm;
in the fourth polishing procedure, the target material conveying speed is 3.5m/min, the abrasive belt rotating speed is 10m/min, the processing times are one time, and the reduction of the target material height is 0.06 mm;
in the first four working procedures, between every two working procedures and between two times of processing in the same working procedure, the target material after the previous processing is returned to the initial position, so that the processing of the target material is in the same moving direction;
the processing times of the manual polishing procedure are one time, and the copper target material after polishing is obtained by uniformly polishing with scouring pad.
In the embodiment, the roughness of the polished copper target sputtering surface is 0.25 μm, the process method has high automation degree and high processing efficiency, and the qualified rate of the processed target reaches 99.8%.
Example 2:
the embodiment provides an automatic polishing process method of a copper target, which comprises the following steps:
automatically polishing the sputtering surface of a copper target by using an automatic polishing machine, wherein the copper target is welded with a stainless steel back plate to form a target assembly, the automatic polishing process comprises four polishing procedures, and super-coating abrasive belts are used for polishing, the grain sizes of the abrasive belts used in the four procedures are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, and then, a manual polishing procedure is carried out by using 2000# scouring cloth;
in the first polishing procedure, the target material conveying speed is 3.6m/min, the abrasive belt rotating speed is 8m/min, the processing times are two times, and the reduction amount of the target material height is 0.3 mm;
in the second polishing procedure, the target material conveying speed is 3.4m/min, the abrasive belt rotating speed is 8m/min, the processing times are two times, and the reduction amount of the target material height is 0.18 mm;
in the third polishing procedure, the target material conveying speed is 3.3m/min, the abrasive belt rotating speed is 8m/min, the processing times are one time, and the reduction amount of the target material height is 0.12 mm;
in the fourth polishing procedure, the target material conveying speed is 3.3m/min, the abrasive belt rotating speed is 8m/min, the processing times are one time, and the reduction amount of the target material height is 0.08 mm;
in the first four working procedures, between every two working procedures and between two times of processing in the same working procedure, the target material after the previous processing is returned to the initial position, so that the processing of the target material is in the same moving direction;
the processing times of the manual polishing procedure are two times, and scouring pads are adopted to grind back and forth evenly to obtain the polished copper target material.
In the embodiment, the roughness of the polished copper target sputtering surface is 0.22 μm, the process method has high automation degree and high processing efficiency, and the qualified rate of the processed target reaches 99.7%.
Example 3:
the embodiment provides an automatic polishing process method of a copper target, which comprises the following steps:
automatically polishing the sputtering surface of a copper target by using an automatic polishing machine, wherein the copper target is welded with a copper back plate to form a target assembly, the automatic polishing process comprises four polishing procedures, and super-coating abrasive belts are used for polishing, the grain sizes of the abrasive belts used in the four procedures are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, and then, a manual polishing procedure is carried out by using 2000# scouring cloth;
in the first polishing procedure, the target material conveying speed is 4m/min, the abrasive belt rotating speed is 12m/min, the processing times are two times, and the reduction amount of the target material height is 0.2 mm;
in the second polishing procedure, the target material conveying speed is 3.8m/min, the abrasive belt rotating speed is 12m/min, the processing times are two times, and the reduction amount of the target material height is 0.12 mm;
in the third polishing procedure, the target material conveying speed is 3.7m/min, the abrasive belt rotating speed is 12m/min, the processing times are one time, and the reduction amount of the target material height is 0.07 mm;
in the fourth polishing procedure, the target material conveying speed is 3.7m/min, the abrasive belt rotating speed is 12m/min, the processing times are one time, and the reduction amount of the target material height is 0.05 mm;
in the first four working procedures, between every two working procedures and between two times of processing in the same working procedure, the target material after the previous processing is returned to the initial position, so that the processing of the target material is in the same moving direction;
the processing times of the manual polishing procedure are one time, and the copper target material after polishing is obtained by uniformly polishing with scouring pad.
In the embodiment, the roughness of the polished copper target sputtering surface is 0.28 μm, the process method has high automation degree and high processing efficiency, and the qualified rate of the processed target reaches 99.5%.
Example 4:
the embodiment provides an automatic polishing process method of a copper target, which comprises the following steps:
automatically polishing the sputtering surface of a copper target by using an automatic polishing machine, wherein the copper target is welded with a stainless steel back plate to form a target assembly, the automatic polishing process comprises four polishing procedures, and super-coating abrasive belts are used for polishing, the grain sizes of the abrasive belts used in the four procedures are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, and then, a manual polishing procedure is carried out by using 2000# scouring cloth;
in the first polishing procedure, the target material conveying speed is 3.7m/min, the abrasive belt rotating speed is 9m/min, the processing times are two times, and the reduction amount of the target material height is 0.27 mm;
in the second polishing procedure, the target material conveying speed is 3.7m/min, the abrasive belt rotating speed is 9m/min, the processing times are two times, and the reduction amount of the target material height is 0.14 mm;
in the third polishing procedure, the target material conveying speed is 3.4m/min, the abrasive belt rotating speed is 11m/min, the processing times are one time, and the reduction of the target material height is 0.08 mm;
in the fourth polishing procedure, the target material conveying speed is 3.4m/min, the abrasive belt rotating speed is 11m/min, the processing times are one time, and the reduction amount of the target material height is 0.055 mm;
in the first four working procedures, between every two working procedures and between two times of processing in the same working procedure, the target material after the previous processing is returned to the initial position, so that the processing of the target material is in the same moving direction;
the processing times of the manual polishing procedure are two times, and scouring pads are adopted to grind back and forth evenly to obtain the polished copper target material.
In the embodiment, the roughness of the polished copper target sputtering surface is 0.24 μm, the process method has high automation degree and high processing efficiency, and the qualified rate of the processed target reaches 99.6%.
Example 5:
the embodiment provides an automatic polishing process method of a copper alloy target, which comprises the following steps:
automatically polishing the sputtering surface of a copper alloy target by using an automatic polishing machine, wherein the copper alloy target is welded with a stainless steel back plate to form a target assembly, the automatic polishing process comprises four polishing procedures, and super-coating abrasive belts are used for polishing, the grain sizes of the abrasive belts used in the four procedures are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, and then a manual polishing procedure is carried out by using 2000# scouring cloth;
in the first polishing procedure, the target material conveying speed is 3.9m/min, the abrasive belt rotating speed is 10m/min, the processing times are two times, and the reduction amount of the target material height is 0.22 mm;
in the second polishing procedure, the target material conveying speed is 3.5m/min, the abrasive belt rotating speed is 10m/min, the processing times are two times, and the reduction amount of the target material height is 0.16 mm;
in the third polishing procedure, the target material conveying speed is 3.6m/min, the abrasive belt rotating speed is 9m/min, the processing times are one time, and the reduction amount of the target material height is 0.1 mm;
in the fourth polishing procedure, the target material conveying speed is 3.6m/min, the abrasive belt rotating speed is 9m/min, the processing times are one time, and the reduction of the target material height is 0.07 mm;
in the first four working procedures, between every two working procedures and between two times of processing in the same working procedure, the target material after the previous processing is returned to the initial position, so that the processing of the target material is in the same moving direction;
the processing times of the manual polishing procedure are one time, and the copper target material after polishing is obtained by uniformly polishing with scouring pad.
In the embodiment, the roughness of the polished copper target sputtering surface is 0.3 μm, the process method has high automation degree and high processing efficiency, and the qualified rate of the processed target reaches 99.5%.
Comparative example 1:
this comparative example provides an automatic polishing process for copper targets, which is referred to the process of example 1, except that: the fourth polishing process is not included.
In the comparative example, the 800# abrasive belt which does not adopt the fourth procedure is mechanically polished, so that the target is difficult to finely polish, the surface stress of the target is not uniformly distributed, the roughness is unqualified, and abnormal discharge occurs in the sputtering coating process of the target, so that the target is not uniformly coated.
Comparative example 2:
this comparative example provides an automatic polishing process for copper targets, which is referred to the process of example 1, except that: the order of the gradual reduction of the abrasive belt granularity is not adopted in the first four polishing procedures.
In the comparison example, the abrasive belt is increased in number, the grain size of the abrasive material is gradually reduced, the successive polishing is beneficial to controlling the roughness of the sputtering surface of the target material, and the abrasive belt with small grain size is used firstly, and then the abrasive belt with large grain size is used, so that the surface of the target material is uneven, the roughness is difficult to control, and the use requirement of subsequent sputtering cannot be met.
It can be seen from the above embodiments and comparative examples that, the process method of the present invention automatically polishes the sputtering surface of the target material by using abrasive belts of different types according to the selection of the material of the target material, the particle size of the used abrasive belts is sequentially reduced, and the controllability of the roughness of the polished sputtering surface is ensured by controlling the parameters of the polishing process, so that the roughness of the sputtering surface of the copper-containing target material can reach 0.2 to 0.3 μm, and the subsequent use requirements are met; the polishing process is carried out automatically, the stability is good, manual operation is reduced, the production efficiency is improved, and the yield of target production can be improved to more than 99.5%.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It will be apparent to those skilled in the art that any modification, equivalent substitution of the process of the invention and addition of ancillary operations, selection of specific means, etc., of the present invention are within the scope and disclosure of the invention.
Claims (10)
1. An automatic polishing process method of a copper-containing target material is characterized by comprising the following steps:
and automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing working procedures, and the granularity of abrasive belts used for polishing is gradually reduced to obtain the polished copper-containing target material.
2. The process of claim 1, wherein the copper-containing target is bonded to a backing plate to form a target assembly prior to the automated polishing;
preferably, the copper-containing target comprises a copper target or a copper alloy target;
preferably, the back plate comprises a copper back plate or a stainless steel back plate.
3. The process method according to claim 1 or 2, wherein during the automatic polishing, the target moves along with a conveyor belt of an automatic polishing device, and the sputtering surface of the target faces upwards;
preferably, the abrasive belt rotates around a grinding wheel of the automatic polishing equipment, and the grinding wheel is positioned above the target material;
preferably, the contact position of the target and the abrasive belt, the linear velocity direction of the abrasive belt and the motion direction of the target are parallel.
4. A process according to any one of claims 1 to 3, wherein the belt in the automated polishing process is a super-coated belt;
preferably, the granularity of the abrasive belt is the granularity of abrasive in the abrasive belt;
preferably, the grain sizes of the abrasive belts used in the four procedures of the automatic polishing process are 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence;
preferably, after the automatic polishing process is finished, manual polishing is performed by using scouring pad;
preferably, the manual polishing comprises a process, and the used scouring pad is 2000# scouring pad.
5. The process method according to any one of claims 1 to 4, wherein in the first polishing step, the target material conveying speed is 3.6 to 4m/min, and the rotating speed of the abrasive belt is 8 to 12 m/min;
preferably, the processing height of the first polishing procedure is adjusted down by 0.2-0.3 mm on the basis of the initial thickness of the target material;
preferably, the sputtering surface of the target is processed twice in the first polishing procedure;
preferably, after the target is processed once, the target is retreated to the initial position along with the conveyor belt and then polished again.
6. The process method according to any one of claims 1 to 5, wherein in the second polishing step, the target material conveying speed is 3.4 to 3.8m/min, and the rotation speed of the abrasive belt is 8 to 12 m/min;
preferably, the processing height of the second polishing procedure is adjusted down by 0.12-0.18 mm on the basis of the first polishing procedure;
preferably, the second polishing process is carried out twice on the sputtering surface of the target;
preferably, after the target is processed once, the target is retreated to the initial position along with the conveyor belt and then polished again.
7. The process method according to any one of claims 1 to 6, wherein in the third polishing step, the target material conveying speed is 3.3 to 3.7m/min, and the rotation speed of the abrasive belt is 8 to 12 m/min;
preferably, the processing height of the third polishing procedure is adjusted down by 0.07-0.12 mm on the basis of the second polishing procedure;
preferably, the third polishing process is performed once on the sputtering surface of the target.
8. The process method according to any one of claims 1 to 7, wherein in the fourth polishing step, the target material conveying speed is 3.3 to 3.7m/min, and the rotation speed of the abrasive belt is 8 to 12 m/min;
preferably, the processing height of the fourth polishing procedure is adjusted down by 0.05-0.08 mm on the basis of the third polishing procedure;
preferably, the fourth polishing process is performed once on the sputtering surface of the target.
9. A process according to any one of claims 4 to 8, wherein the number of polishings of the hand-polishing step is at least one;
preferably, the roughness of the polished sputtering surface of the copper-containing target is 0.2-0.3 μm.
10. A process according to any one of claims 1 to 9, characterized in that it comprises the following steps:
automatically polishing the sputtering surface of the copper-containing target material by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing procedures, all polishing procedures are carried out by using super-coating abrasive belts, the granularity of the used abrasive belts is 320# abrasive belt, 400# abrasive belt, 600# abrasive belt and 800# abrasive belt in sequence, then, one manual polishing procedure is carried out by adopting scouring pad, the used scouring pad is 2000# scouring pad, and the polished copper-containing target material is obtained;
in the first polishing procedure, the target material conveying speed is 3.6-4 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.2-0.3 mm on the basis of the initial thickness of the target material, and the machining times are twice;
in the second polishing procedure, the target material conveying speed is 3.4-3.8 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.12-0.18 mm on the basis of the first polishing procedure, and the machining times are twice;
in the third polishing procedure, the target material conveying speed is 3.3-3.7 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.07-0.12 mm on the basis of the second polishing procedure, and the machining times are once;
in the fourth polishing procedure, the target material conveying speed is 3.3-3.7 m/min, the abrasive belt rotating speed is 8-12 m/min, the machining height is reduced by 0.05-0.08 mm on the basis of the third polishing procedure, and the machining times are once;
the number of times of the manual polishing procedure is at least one, and the roughness of the sputtering surface of the copper-containing target material after polishing is 0.2-0.3 mu m.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113579862A (en) * | 2021-08-09 | 2021-11-02 | 宁波江丰电子材料股份有限公司 | Method for reducing pre-sputtering time of copper target |
| CN114589586A (en) * | 2022-03-21 | 2022-06-07 | 武汉江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN114686827A (en) * | 2022-04-15 | 2022-07-01 | 广东江丰电子材料有限公司 | LCD target material and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150136594A1 (en) * | 2009-11-13 | 2015-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and manufacturing method thereof, and transistor |
| CN106346344A (en) * | 2015-07-15 | 2017-01-25 | 宁波江丰电子材料股份有限公司 | Copper target material surface processing method |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| US20190105752A1 (en) * | 2018-08-24 | 2019-04-11 | Chengdu Times Live Science and Technology Co.Ltd. | Surface treatment process of CMP Polishing pad |
| CN209533012U (en) * | 2019-01-31 | 2019-10-25 | 河北冠靶科技有限公司 | A kind of target grinding device |
| CN111775018A (en) * | 2020-07-01 | 2020-10-16 | 宁波江丰电子材料股份有限公司 | Rust removal polishing method for copper target assembly |
| CN111958333A (en) * | 2020-08-14 | 2020-11-20 | 合肥江丰电子材料有限公司 | Polishing process of neodymium-aluminum target sputtering surface |
| US20200384598A1 (en) * | 2017-10-02 | 2020-12-10 | Sumitomo Chemical Company, Limited | Method for manufacturing sputtering target and sputtering target |
-
2021
- 2021-04-29 CN CN202110474296.0A patent/CN113182941A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150136594A1 (en) * | 2009-11-13 | 2015-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and manufacturing method thereof, and transistor |
| CN106346344A (en) * | 2015-07-15 | 2017-01-25 | 宁波江丰电子材料股份有限公司 | Copper target material surface processing method |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| US20200384598A1 (en) * | 2017-10-02 | 2020-12-10 | Sumitomo Chemical Company, Limited | Method for manufacturing sputtering target and sputtering target |
| US20190105752A1 (en) * | 2018-08-24 | 2019-04-11 | Chengdu Times Live Science and Technology Co.Ltd. | Surface treatment process of CMP Polishing pad |
| CN209533012U (en) * | 2019-01-31 | 2019-10-25 | 河北冠靶科技有限公司 | A kind of target grinding device |
| CN111775018A (en) * | 2020-07-01 | 2020-10-16 | 宁波江丰电子材料股份有限公司 | Rust removal polishing method for copper target assembly |
| CN111958333A (en) * | 2020-08-14 | 2020-11-20 | 合肥江丰电子材料有限公司 | Polishing process of neodymium-aluminum target sputtering surface |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113579862A (en) * | 2021-08-09 | 2021-11-02 | 宁波江丰电子材料股份有限公司 | Method for reducing pre-sputtering time of copper target |
| CN114589586A (en) * | 2022-03-21 | 2022-06-07 | 武汉江丰电子材料有限公司 | Polishing treatment method for side edge of LCD (liquid crystal display) target |
| CN114686827A (en) * | 2022-04-15 | 2022-07-01 | 广东江丰电子材料有限公司 | LCD target material and preparation method thereof |
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