CN114686827A - LCD target material and preparation method thereof - Google Patents
LCD target material and preparation method thereof Download PDFInfo
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- CN114686827A CN114686827A CN202210398672.7A CN202210398672A CN114686827A CN 114686827 A CN114686827 A CN 114686827A CN 202210398672 A CN202210398672 A CN 202210398672A CN 114686827 A CN114686827 A CN 114686827A
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- lcd target
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- 239000013077 target material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 238000005498 polishing Methods 0.000 claims abstract description 140
- 238000011282 treatment Methods 0.000 claims abstract description 65
- 238000004544 sputter deposition Methods 0.000 claims abstract description 35
- 238000005488 sandblasting Methods 0.000 claims abstract description 31
- 238000001035 drying Methods 0.000 claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 23
- 238000009991 scouring Methods 0.000 claims abstract description 11
- 238000003754 machining Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 45
- 238000001816 cooling Methods 0.000 claims description 34
- 238000003801 milling Methods 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000005406 washing Methods 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000008213 purified water Substances 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 239000010431 corundum Substances 0.000 claims description 4
- 238000005422 blasting Methods 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 15
- 239000010949 copper Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P23/00—Machines or arrangements of machines for performing specified combinations of different metal-working operations not covered by a single other subclass
- B23P23/04—Machines or arrangements of machines for performing specified combinations of different metal-working operations not covered by a single other subclass for both machining and other metal-working operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an LCD target material and a preparation method thereof, wherein the preparation method of the LCD target material comprises the following steps: providing an LCD target blank and a back plate; sequentially carrying out machining, welding, polishing, sand blasting, cleaning and drying on an LCD target blank to obtain the LCD target; the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing wheel is made of scouring pad. According to the preparation method of the LCD target, the roughness of the sputtering surface of the target is controlled by adopting the abrasive belt, and the gloss is controlled by adopting the polishing wheel, so that the roughness of the LCD target can reach 0.01-0.5 mu m, the glossiness is higher, and the subsequent use requirements are met.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, relates to a preparation method of a target material, and particularly relates to an LCD target material and a preparation method thereof.
Background
With the rapid development of the semiconductor industry, the demand of coating materials as important materials for manufacturing semiconductor electronic devices is increasing. The target material is used as an important coating material and has wide application in the fields of integrated circuits, flat panel displays, solar energy, optical devices and the like, the most common method for preparing films by using the target material comprises a sputtering coating method, and in order to ensure the excellent performance of film products, the characteristics of the target material such as structure and the like are required, so that the preparation process of the target material needs to be controlled to obtain the target material meeting the sputtering requirement.
Polishing treatment is one of important operation steps in the target preparation process, and has important influence on the surface performance of the target, such as parameters of roughness, flatness and the like, however, the existing polishing process often causes unstable surface roughness and uneven color, the polishing efficiency during manual operation or semi-automatic operation is low, the polishing parameters need to be adjusted according to different target materials, however, the parameters are difficult to accurately adjust through manual operation, the process stability is poor, and the product yield is reduced, so that a proper automatic polishing process needs to be selected for different targets, and the production efficiency and the product quality are improved.
CN 111975465a discloses a polishing process of a sputtering surface of a molybdenum target, which comprises a first mechanical polishing, a second mechanical polishing, a third mechanical polishing and a fourth mechanical polishing which are sequentially performed; the feeding speed in the first mechanical polishing is 2-3 m/min; the feeding speed in the second mechanical polishing is 4-5 m/min; the feeding speed in the third mechanical polishing is 6-8 m/min; the feeding speed in the fourth mechanical polishing is 7-9 m/min, the polishing process mainly polishes the sputtering surface of the molybdenum target, the main control parameter is the feeding speed of each stage of polishing, the abrasive belt is mainly used for polishing the target, the roughness of the target is further adjusted, and the glossiness of the target is improved.
CN 107866721a discloses a processing method of a target assembly, comprising: providing a target blank with a surface to be processed: adopting an abrasive belt to automatically polish the surface to be processed to form a sputtering surface; although the processing method comprises automatic polishing treatment, the disclosed processes of rough polishing, fine polishing and the like do not define the processing height and the feeding speed, the processing time is long, the process is simple, and accurate processing is difficult to realize.
CN 113084674a discloses an automatic polishing process method of an aluminum-containing target, which comprises the following steps: and automatically polishing the sputtering surface of the aluminum-containing target by adopting automatic polishing equipment, wherein the automatic polishing process comprises four polishing procedures, and the granularity of abrasive belts used for polishing is gradually reduced to obtain the polished aluminum-containing target. According to the process method, abrasive belts of different types are adopted to automatically polish the sputtering surface of the target according to the selection of the material of the target, the granularity of the used abrasive belts is sequentially reduced, and the controllability of the roughness of the polished sputtering surface is ensured through the control of the polishing process parameters, so that the roughness of the sputtering surface of the aluminum-containing target can reach 0.2-0.7 mu m, and the subsequent use requirements are met. The polishing process in the process method comprises four polishing processes, the controllability of the roughness of the sputtering surface can be ensured, but the process is complex, and only the abrasive belt is used in the polishing process, so that the glossiness of the sputtering surface cannot be improved.
In summary, it is one of the problems to be solved in the art to provide a method for preparing a target material that can ensure the controllability of the roughness of the sputtering surface of the target material and improve the surface gloss of the target material.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the LCD target and the preparation method thereof, the preparation method improves the polishing technology of the target, and adopts the polishing wheel to replace the traditional aluminum oxide to polish the product, so that the surface polishing treatment method of the target is more convenient and correct, the efficiency of replacing the aluminum oxide with the polishing wheel is improved, and the time and the labor are saved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for preparing an LCD target, the method comprising:
providing an LCD target blank and a back plate;
sequentially carrying out machining, welding, polishing, sand blasting, cleaning and drying on an LCD target blank to obtain the LCD target;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel;
the polishing wheel is made of scouring pad.
According to the preparation method of the LCD target, the roughness of the sputtering surface of the target is controlled by adopting the abrasive belt, and the gloss is controlled by adopting the polishing wheel, so that the roughness of the LCD target can reach 0.01-0.5 mu m, the glossiness is higher, and the subsequent use requirements are met.
The target material can be an aluminum target material, a copper target material, a molybdenum target material and the like.
Preferably, the machining includes a rough milling process and a finish milling process performed in this order.
Preferably, the rough milling process leaves a margin of 0.05 to 0.10mm, for example 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm or 0.10mm, but not limited to the values recited, and other values not recited in the range of values are equally applicable.
Preferably, the welding temperature is 275 ℃ and 285 ℃, and may be 275 ℃, 276 ℃, 277 ℃, 278 ℃, 279 ℃, 280 ℃, 281 ℃, 282 ℃, 283 ℃, 284 ℃ or 285 ℃, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the welding time is 25-35min, for example 25min, 26min, 27min, 28min, 29min, 30min, 31min, 32min, 33min, 34min or 35min, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the welding further comprises cooling.
Preferably, the cooling means comprises pressure cooling.
Preferably, the pressure of the pressurized cooling is 0.4 to 0.5MPa, and may be, for example, 0.4MPa, 0.41MPa, 0.42MPa, 0.43MPa, 0.44MPa, 0.45MPa, 0.46MPa, 0.47MPa, 0.48MPa, 0.49MPa or 0.5MPa, but is not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the cooling time is 40-80min, for example 40min, 45min, 50min, 55min, 60min, 65min, 70min, 75min or 80min, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the one-time polished polishing member comprises a super-coated abrasive paper tape.
Preferably, the mesh number of the super-coated abrasive paper tape is 200-800 meshes, such as 200 meshes, 240 meshes, 320 meshes, 400 meshes, 500 meshes, 600 meshes or 800 meshes, but not limited to the enumerated values, and other unrecited values in the numerical range are also applicable.
Preferably, the super-coating of the super-coated abrasive paper tape comprises a silicon carbide coating.
Preferably, the polishing speed of the primary polishing is 8-12m/min, such as 8m/min, 8.5m/min, 9m/min, 9.5m/min, 10m/min, 10.5m/min, 11m/min, 11.5m/min or 12m/min, but not limited to the values listed, and other values not listed in the numerical range are also applicable.
Preferably, the mesh number of the scouring pad is 800-1000 meshes, such as 800 meshes, 850 meshes, 900 meshes, 950 meshes or 1000 meshes, but not limited to the enumerated values, and other unrecited values in the numerical range are also applicable.
Preferably, the rotation speed of the secondary polishing is 20 to 50m/s, and may be, for example, 20m/s, 25m/s, 30m/s, 35m/s, 40m/s, 45m/s or 50m/s, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the roughness of the sputtering surface of the LCD target after the polishing treatment is 0.01-0.5 μm, and may be, for example, 0.01 μm, 0.05 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm or 0.5 μm, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the air pressure during the sand blasting is 4-5kg/cm2G may be, for example, 4kg/cm2G、4.1kg/cm2G、4.2kg/cm2G、4.3kg/cm2G、4.4kg/cm2G、4.5kg/cm2G、4.6kg/cm2G、4.7kg/cm2G、4.8kg/cm2G、4.9kg/cm2G or 5kg/cm2G, but is not limited to the recited values, and other values within the range are equally applicable.
Preferably, the distance of the sand blasting is 300-400mm, such as 300mm, 310mm, 320mm, 330mm, 340mm, 350mm, 360mm, 370mm, 380mm, 390mm or 400mm, but not limited to the values listed, and other values not listed in the range of values are also applicable.
Preferably, the sand adopted by the sand blasting treatment is brown corundum and/or white corundum.
Preferably, the grit used for the grit blasting is of size # 46.
Preferably, the surface roughness of the back sheet after sandblasting is 5-10 μm, for example, 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm, 7.5 μm, 8 μm, 8.5 μm, 9 μm, 9.5 μm or 10 μm, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
Preferably, the surface roughness of the LCD target after sandblasting is less than or equal to 3.0 μm, such as 3.0 μm, 2.8 μm, 2.6 μm, 2.4 μm, 2.2 μm, 2.0 μm, 1.8 μm, 1.6 μm, 1.4 μm, 1.2 μm or 1.0 μm, but not limited to the values listed, and other values not listed within the range of values are equally applicable.
Preferably, the washing comprises water washing.
Preferably, the water washing is performed with purified water and/or deionized water.
Preferably, the drying temperature is 60-90 ℃, for example, 60 ℃, 63 ℃, 66 ℃, 69 ℃, 72 ℃, 75 ℃, 78 ℃, 81 ℃, 84 ℃, 87 ℃ or 90 ℃, but not limited to the recited values, and other values not recited in the range of values are also applicable.
Preferably, the drying time is 30-60min, for example 30min, 33min, 36min, 39min, 42min, 45min, 48min, 51min, 54min, 57min or 60min, but is not limited to the values listed, and other values not listed in the range of values are equally applicable.
As a preferred technical solution of the present invention, a method for preparing an LCD target provided by the first aspect of the present invention includes:
providing an LCD target blank and a back plate;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.05-0.10 mm;
the welding temperature is 275 ℃ and 285 ℃ and the time is 25-35 min;
the cooling comprises pressurizing cooling under 0.4-0.5MPa, and the cooling time is 40-80 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a silicon carbide coating abrasive paper tape with 200-800 meshes, and the polishing speed of the primary polishing is 8-12 m/min; the polishing wheel is made of 800-1000-mesh scouring pad; the rotation speed of the secondary polishing is 20-50 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.01-0.5 μm;
the air pressure during the sand blasting treatment is 4-5kg/cm2G, the distance is 300-400 mm; the surface roughness of the backboard after sand blasting treatment is 5-10 mu m, and the surface roughness of the LCD target material is less than or equal to 3.0 mu m;
the drying temperature is 60-90 deg.C, and the drying time is 30-60 min.
In a second aspect, the invention provides an LCD target material, which is obtained by the preparation method of the first aspect.
The recitation of numerical ranges herein includes not only the above-recited numerical values, but also any numerical values between non-recited numerical ranges, and is not intended to be exhaustive or to limit the invention to the precise numerical values encompassed within the range for brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
(1) the preparation method of the LCD target improves the polishing technology of the target, adopts the polishing wheel to replace the traditional aluminum oxide to polish the product, so that the surface polishing treatment method of the target is more convenient and correct, the efficiency of replacing the aluminum oxide with the polishing wheel is improved, and the time and the labor are saved;
(2) according to the preparation method of the LCD target, the roughness of the sputtering surface of the target is controlled by adopting the abrasive belt, and the gloss is controlled by adopting the polishing wheel, so that the roughness of the LCD target can reach 0.01-0.5 mu m, the glossiness is higher, and the subsequent use requirements are met.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides an LCD target, and a preparation method of the LCD target comprises the following steps:
providing an LCD target blank and a back plate; the LCD target blank is a copper target;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.08 mm;
the welding temperature is 280 ℃ and the welding time is 30 min;
the cooling comprises pressurized cooling under 0.45MPa, and the cooling time is 60 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a 600-mesh silicon carbide coating abrasive paper tape, and the polishing speed of the primary polishing is 10 m/min; the polishing wheel is made of 1000-mesh scouring cloth; the rotating speed of the secondary polishing is 35 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.3 mu m;
the air pressure during the sand blasting was 4.5kg/cm2G, the distance is 400 mm; the surface roughness of the backboard after sand blasting is 6.8 mu m, and the surface roughness of the LCD target material is 2.4 mu m;
the drying temperature is 75 deg.C, and the drying time is 50 min.
In the embodiment, the roughness of the sputtering surface of the polished copper target is 0.3 μm, the polished copper target has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target reaches 99.8%.
Example 2
The embodiment provides an LCD target, and a preparation method of the LCD target comprises the following steps:
providing an LCD target blank and a back plate; the LCD target blank is an aluminum target;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.05 mm;
the welding temperature is 280 ℃ and the welding time is 30 min;
the cooling comprises pressurized cooling under 0.4MPa, and the cooling time is 80 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a silicon carbide coating abrasive paper tape with 800 meshes, and the polishing speed of the primary polishing is 8 m/min; the polishing wheel is made of 1000-mesh scouring pad; the rotating speed of the secondary polishing is 20 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.05 μm;
the air pressure during the sand blasting treatment was 4kg/cm2G, the distance is 300 mm; the surface roughness of the back plate after sand blasting is 6.2 mu m, and the surface roughness of the LCD target material is 3.0 mu m;
the drying temperature is 90 deg.C, and the drying time is 30 min.
In the embodiment, the roughness of the sputtering surface of the polished aluminum target material is 0.05 μm, the polished aluminum target material has better glossiness, the processing efficiency of the process method is high, and the qualification rate of the processed target material reaches 99.9%.
Example 3
The embodiment provides an LCD target, and a preparation method of the LCD target comprises the following steps:
providing an LCD target blank and a back plate; the LCD target blank is a molybdenum target;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.10 mm;
the welding temperature is 285 ℃, and the time is 25 min;
the cooling comprises pressurized cooling under 0.5MPa, and the cooling time is 40 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a silicon carbide coating abrasive paper tape of 200 meshes, and the polishing speed of the primary polishing is 12 m/min; the polishing wheel is made of 800-mesh scouring pad; the rotating speed of the secondary polishing is 20 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.5 mu m;
the air pressure during the sand blasting treatment was 5kg/cm2G, the distance is 300 mm; the surface roughness of the backboard after sand blasting is 5 microns, and the surface roughness of the LCD target is 2.1 microns;
the drying temperature is 60-90 deg.C, and the drying time is 30-60 min.
In the embodiment, the roughness of the sputtering surface of the polished molybdenum target material is 0.25 μm, the polished molybdenum target material has better glossiness, the processing efficiency of the process method is high, and the qualification rate of the processed target material reaches 99.6%.
Example 4
The embodiment provides an LCD target, and a preparation method of the LCD target comprises the following steps:
providing an LCD target blank and a back plate; the LCD target blank is a nickel-silicon target;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.08 mm;
the welding temperature is 275 ℃, and the time is 25-35 min;
the cooling comprises pressurized cooling at 0.41MPa, and the cooling time is 65 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a silicon carbide coating abrasive paper tape with 800 meshes, and the polishing speed of the primary polishing is 10 m/min; the polishing wheel is made of 1000-mesh scouring cloth; the rotating speed of the secondary polishing is 30 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.15 mu m;
the air pressure during the sand blasting was 4.6kg/cm2G, the distance is 360 mm; the surface roughness of the backboard after sand blasting treatment is 6.8 mu m, and the surface roughness of the LCD target material is 2.9 mu m;
the drying temperature is 90 deg.C, and the drying time is 40 min.
In the embodiment, the roughness of the sputtering surface of the polished nickel-silicon target material is 0.15 μm, the polished nickel-silicon target material has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target material reaches 99.5%.
Example 5
The present embodiment provides an LCD target, and the preparation method of the LCD target is different from that of embodiment 1 only in that: the mesh number of the carborundum coating abrasive paper tape is changed to 800 meshes in the embodiment.
In the embodiment, the roughness of the sputtering surface of the polished copper target is 0.05 μm, the polished copper target has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target reaches 99.6%.
Example 6
The present embodiment provides an LCD target, and the preparation method of the LCD target is different from that of embodiment 1 only in that: in the embodiment, the mesh number of the carborundum coating abrasive paper tape is changed into 50 meshes.
In the embodiment, the roughness of the sputtering surface of the polished copper target is 0.6 μm, the polished copper target has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target reaches 98.9%.
Example 7
The present embodiment provides an LCD target, and the preparation method of the LCD target is different from that of embodiment 1 only in that: this example changed the polishing speed of one polishing to 6 m/min.
In the embodiment, the roughness of the sputtering surface of the polished copper target is 0.48 μm, the copper target has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target reaches 99.3%.
Example 8
The present embodiment provides an LCD target, and the preparation method of the LCD target is different from that of embodiment 1 only in that: this example changed the polishing speed of one polishing to 15 m/min.
In the embodiment, the roughness of the sputtering surface of the polished copper target is 0.45 μm, the polished copper target has better glossiness, the processing efficiency of the process method is high, and the qualified rate of the processed target reaches 99.3%.
Comparative example 1
The present comparative example provides an LCD target, which is prepared by a method different from that of example 1 only in that: in the comparative example, the material of the polishing wheel in the secondary polishing was changed to alumina.
In the comparative example, the roughness of the sputtering surface of the polished copper target is 0.3 μm, but the glossiness is poor, and the qualified rate of the processed target reaches 99.3%.
Comparative example 2
The present comparative example provides an LCD target, which is prepared by a method different from that of example 1 only in that: this comparative example omits one polishing.
In the comparative example, the roughness of the sputtering surface of the polished copper target is 1.2 μm, the glossiness is poor, and the qualified rate of the processed target reaches 95.2%.
Comparative example 3
The present comparative example provides an LCD target, which is prepared by a method different from that of example 1 only in that: this comparative example omits the secondary polishing.
In the comparative example, the roughness of the sputtering surface of the polished copper target is 0.3 μm, the glossiness is poor, and the qualification rate of the processed target reaches 95.2%.
In conclusion, in the LCD target and the preparation method thereof provided by the invention, the roughness of the sputtering surface of the target is controlled by adopting the abrasive belt, and the gloss is controlled by adopting the polishing wheel, so that the roughness of the LCD target can reach 0.01-0.5 mu m, the LCD target has higher gloss, and the subsequent use requirements are met.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The preparation method of the LCD target is characterized by comprising the following steps:
providing an LCD target blank and a back plate;
sequentially carrying out machining, welding, polishing, sand blasting, cleaning and drying on an LCD target blank to obtain the LCD target;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel;
the polishing wheel is made of scouring pad.
2. The method for preparing the LCD target according to claim 1, wherein the machining comprises a rough milling treatment and a finish milling treatment which are sequentially performed;
preferably, the margin of 0.05-0.10mm is left on the edge of the rough milling treatment.
3. The method for preparing the LCD target material as claimed in claim 1 or 2, wherein the welding temperature is 275-285 ℃;
preferably, the welding time is 25-35 min.
4. The method for preparing an LCD target according to any one of claims 1-3, wherein the welding is followed by cooling;
preferably, the cooling means comprises pressure cooling;
preferably, the pressure of the pressurizing and cooling is 0.4-0.5 MPa;
preferably, the cooling time is 40-80 min.
5. The method for preparing an LCD target according to any one of claims 1 to 4, wherein the primary polished polishing member comprises a super-coated abrasive paper tape;
preferably, the mesh number of the super-coating abrasive paper tape is 200-800 meshes;
preferably, the super-coating of the super-coated abrasive paper tape comprises a silicon carbide coating;
preferably, the polishing speed of the primary polishing is 8-12 m/min;
preferably, the mesh number of the scouring pad is 800-1000 meshes;
preferably, the rotation speed of the secondary polishing is 20-50 m/s;
preferably, the roughness of the sputtering surface of the LCD target after the polishing treatment is 0.01-0.5 μm.
6. The method for preparing LCD target according to any one of claims 1 to 5, wherein the air pressure during the sand blasting is 4-5kg/cm2G；
Preferably, the distance of the sand blasting treatment is 300-400 mm;
preferably, the sand adopted by the sand blasting treatment is brown corundum and/or white corundum;
preferably, the grit used for the grit blasting is of size # 46.
7. The method for preparing an LCD target according to any one of claims 1 to 6, wherein the surface roughness of the back plate after sand blasting is 5 to 10 μm;
preferably, the surface roughness of the LCD target after sand blasting treatment is less than or equal to 3.0 μm.
8. The method for preparing an LCD target according to any of claims 1 to 7, wherein the washing comprises water washing;
preferably, the temperature of the drying is 60-90 ℃;
preferably, the drying time is 30-60 min.
9. The method for preparing an LCD target according to any one of claims 1 to 8, wherein the method for preparing an LCD target comprises:
providing an LCD target blank and a back plate;
carrying out rough milling treatment, finish milling treatment, welding, cooling, polishing treatment, sand blasting treatment, washing by adopting purified water and/or deionized water and drying on the LCD target blank in sequence to obtain the LCD target;
wherein, the margin left on the edge during rough milling treatment is 0.05-0.10 mm;
the welding temperature is 275 ℃ and 285 ℃ and the time is 25-35 min;
the cooling comprises pressurizing cooling under 0.4-0.5MPa, and the cooling time is 40-80 min;
the polishing treatment comprises: carrying out primary polishing by adopting an abrasive belt, and then carrying out secondary polishing by adopting a polishing wheel; the polishing piece for primary polishing comprises a silicon carbide coating abrasive paper tape with 200-800 meshes, and the polishing speed of the primary polishing is 8-12 m/min; the polishing wheel is made of 800-1000-mesh scouring pad; the rotation speed of the secondary polishing is 20-50 m/s; the roughness of the sputtering surface of the LCD target after polishing treatment is 0.01-0.5 μm;
the air pressure during the sand blasting treatment is 4-5kg/cm2G, the distance is 300-400 mm; the surface roughness of the backboard after sand blasting treatment is 5-10 mu m, and the surface roughness of the LCD target material is less than or equal to 3.0 mu m;
the drying temperature is 60-90 deg.C, and the drying time is 30-60 min.
10. An LCD target, characterized in that the LCD target is obtained by the preparation method of any one of claims 1 to 9.
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