CN111644906B - Thickening-optical cement-symmetrical thinning processing method for high-precision ultrathin optical part - Google Patents
Thickening-optical cement-symmetrical thinning processing method for high-precision ultrathin optical part Download PDFInfo
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- CN111644906B CN111644906B CN202010491541.4A CN202010491541A CN111644906B CN 111644906 B CN111644906 B CN 111644906B CN 202010491541 A CN202010491541 A CN 202010491541A CN 111644906 B CN111644906 B CN 111644906B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
Abstract
The invention discloses a thickening-optical cement-symmetrical thinning processing method of a high-precision ultrathin optical part, which comprises the following steps: slicing; annealing; double-sided grinding; grinding the surface A; circularly polishing the surface A with asphalt; polishing the surface A; grinding the surface B; and circularly polishing the surface B by using the asphalt. The annealing mode of the invention can ensure that the residual stress in the blank material is distributed in a mode of middle plane symmetry. Because the residual stress passing through the part is symmetrically distributed about the middle plane, if the removal amount of the two end surfaces of the part is different, the stress release is asymmetric, and the part is warped and deformed. The double-side grinding process can control the parallelism precision of two end faces of a part and simultaneously ensure that the thinning amount of the two end faces is equal in the removing process. The invention adopts a method of sequentially thinning ring polishing and glue bonding matching of two end faces to process and control the flatness. The invention can process ultrathin high-precision optical parts with high parallelism, high-precision planeness and low surface roughness.
Description
Technical Field
The invention belongs to the field of optical processing, and relates to a precision processing method of a high-precision ultrathin optical part.
Background
The ultrathin optical parts have the advantages of light weight, small thermal gradient and the like, are widely applied to novel optical systems with requirements on light weight, miniaturization and high thermal stability, and have increasingly high requirements on the processing precision and quality of the ultrathin optical parts along with the continuous improvement of the design performance requirements of the optical systems, for example, the disc laser pumping system needs ultrathin parts with extremely high precision and quality requirements.
Parallelism, flatness and surface roughness are the main processing indexes of optical parts and have important influence on the performance of the parts. At present, the surface roughness of most optical parts can meet the working requirements by adopting a chemical mechanical polishing technology. However, the control of parallelism and flatness is still one of the technical difficulties in the processing of ultra-thin optical parts. In general optical processing, the most effective method for controlling parallelism is a double-side lapping and polishing technique. However, when double-side grinding and polishing are adopted, the thickness of the planetary wheel is required to be smaller than that of a part, and when the thickness of the part and the thickness of the planetary wheel are too small, the planetary wheel is easy to tear due to insufficient strength. On the other hand, the parts are easy to break away from the wandering star wheel and are crushed, so that the whole disc of parts is scrapped. In addition, the flatness of the ultra-thin optical parts can not reach the submicron or even nanometer precision only by adopting a double-sided grinding and polishing technology. Therefore, high-precision optical parts still rely on a large amount of traditional pitch ring polishing technology for single-side processing. However, in the process of annularly polishing the asphalt of the ultrathin optical part, the part has extremely small thickness and weak rigidity, and the part is warped and deformed after being subjected to bottom wall due to the release of internal stress and cementing stress, so that the flatness of the workpiece is difficult to control.
Patent CN109824248A describes a precision processing method of ultra-thin quartz plate, which can process high precision flatness and surface roughness by using a method of thinning and matching with polishing rubber rings on both end faces, but the patent does not propose a control means for parallelism of ultra-thin parts. Patent CN102528645A introduces a double-side polishing processing method for large-sized ultra-thin quartz glass sheets, which utilizes a planetary wheel subjected to leveling treatment to prevent the ultra-thin quartz glass sheets from coming out, and improves the yield of the process. The process method uses a double-sided grinding and polishing process, can well control the parallelism of the part, but the double-sided grinding and polishing process cannot realize the processing of the high-flatness ultrathin optical part. Patent CN1740106 controls the flatness and surface roughness of the ultra-thin optical component by adjusting the components of the polishing solution and the process parameters, but there is no control method related to the parallelism, and how to eliminate the influence of the deformation of the component is not proposed, so it is not possible to process the ultra-thin optical component with high precision.
In conclusion, there is no effective process for overall control of high-precision parallelism, flatness and surface roughness of ultra-thin optical parts. The main difficulty of the parallelism control of the ultrathin optical parts is that when the double-side grinding and polishing are carried out, the thicknesses of the parts and the wandering star wheel are too small, so that the wandering star wheel is easy to tear and the parts are easy to move out; the main difficulty of flatness control is that the double-sided grinding and polishing technology has no flatness control means, and when single-sided asphalt ring polishing is adopted, the flatness of the processed part is deteriorated again because the part thickness is too small and the ultra-thin part is warped and deformed due to the release of internal stress and cementation stress.
The invention provides a thickening-photoresist-symmetrical thinning method, which can control the parallelism of two end faces of a part in a thicker state by double-face grinding, and is characterized in that the thickening-photoresist-symmetrical thinning method is adopted. By adopting the process method provided by the invention, the ultrathin optical parts with high-precision parallelism, flatness and surface roughness can be processed.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to design a thickening-optical cement-symmetrical thinning processing method of a high-precision ultrathin optical part, which can effectively solve the deformation problem caused by internal stress release and can avoid cementing stress caused by curing shrinkage of a bonding cement, so as to meet the index requirements of submicron parallelism, nanoscale planeness and submicron roughness on the ultrathin part, which are provided by systems such as precision optics, machinery, electronics and the like.
In order to achieve the purpose, the technical scheme of the invention is as follows: a thickening-optical cement-symmetrical thinning processing method for a high-precision ultrathin optical part comprises the following steps:
step one, slicing: selecting a cylindrical blank material, and barreling the excircle diameter of the cylindrical blank material to a required size. Cutting the barrelled blank material into a thickness h parallel to the end face0The thickness of the wafer blank is more than 2h0＜3h，Wherein h is the index thickness of the ultrathin part, h0And h is in cm.
Step two, annealing: and covering the outer cylindrical surface of the wafer blank with quartz cotton for heat insulation, covering two end surfaces with a high-heat-conductivity material, and then putting the wafer blank into an annealing furnace for annealing. The annealing temperature interval is set to be 990-1200 ℃, and the heat preservation time in the annealing temperature interval reaches t-520 (h)0/2)2And min, turning off the power supply of the annealing furnace, waiting for cooling to room temperature, and taking out.
Step three, double-sided grinding: putting the annealed wafer blank into a planetary gear for double-sided grinding, and thinning the upper end face and the lower end face of the wafer blank at the same time to ensure that the thinning amounts of the upper end face and the lower end face are the same; the grinding disc is a diamond bonded abrasive grinding disc, a cast iron grinding disc, a composite copper disc or a composite tin disc; during grinding, the diamond fixed abrasive grinding disc is matched with pure water for grinding, and other grinding discs are matched with silicon carbide or aluminum oxide grinding powder for grinding. And during double-sided grinding, the parallelism of two end faces of the wafer blank is controlled to be less than 0.06 mu m/mm, and the residual thickness of the part after grinding is 0.1-0.2 mm greater than the minimum thickness of the planetary wheel.
Fourthly, grinding the surface A: and (3) bonding the surface B of the wafer blank on the carrying disc by using asphalt or fire paint in a glue dispensing mode, and flatly paving the wafer blank on the carrying disc. After bonding, the wafer blanks are stably loaded by first-level precision optical flat pressing, each wafer blank is covered by the optical flat pressing, and the wafer blanks are placed into an incubator for heat preservation for 1 hour at the temperature of 60 ℃. And after cooling, grinding the surface A of the wafer blank by adopting the single surface of the grinding tool in the third step, and grinding the surface A, wherein the residual thickness of the ground wafer blank is 1.55 h. The surface A is one end face of the wafer blank, and the surface B is the other end face of the wafer blank;
fifthly, circularly polishing the surface A with the asphalt: keeping the wafer blank ground and thinned in the fourth step on a disc, polishing the wafer blank by adopting an asphalt ring polishing mode, wherein the polishing solution is 0.3 mu m of aluminum oxide, the concentration is 7%, the removal amount is 0.05h, adjusting the position of the correction disc according to the surface shape of the wafer blank, processing the flatness of the surface A to the index requirement, and the residual thickness of the wafer blank is 1.5 h.
Sixthly, polishing the surface A: and after the fifth step, the surface A of the wafer blank is subjected to optical cement to a high-precision optical cement backing plate, and the wafer blank is required to be completely attached, and the attaching surface is not allowed to have interference fringes and bubbles.
Seventh step, grinding the surface B: and grinding the surface B by adopting the method of the fourth step on the single surface, wherein the thickness reduction amount is 0.45 h.
Eighthly, circularly polishing the surface B with asphalt: and (5) polishing the B surface of the wafer blank by adopting the method in the fifth step, wherein the removal amount is 0.05h, the flatness of the B surface is processed to meet the index requirement, and the residual thickness of the wafer blank is h, so that the finished product of the ultrathin part is obtained.
Further, the high thermal conductivity material comprises an alumina ceramic plate or a zirconia ceramic plate.
Compared with the prior art, the invention has the following beneficial effects:
1. the annealing process described according to the invention makes it possible to distribute the residual stresses in the material of the blank in a manner which is symmetrical in the middle plane.
2. Because the residual stress passing through the part is symmetrically distributed about the middle plane, if the removal amount of the two end surfaces of the part is different, the stress release is asymmetric, and the part is warped and deformed. The double-side grinding process can control the parallelism precision of two end faces of a part and simultaneously ensure that the thinning amount of the two end faces is equal in the removing process. In the process of the invention, during double-sided grinding, the part still has a certain thickness, so that on one hand, the phenomenon of tearing or sheet jumping caused by over-thin wandering wheel can be prevented, and on the other hand, the uncontrollable deformation caused by over-thin part can be avoided. Because the rigidity of the ultrathin optical part is extremely weak, the part is deformed by the solidification shrinkage of the adhesive glue or paraffin, so that in order to avoid the deformation deterioration caused by the internal stress and the cementing stress, the processed flatness is processed and controlled by adopting a method of sequentially thinning ring polishing on two end faces and adhering and matching with the optical cement.
3. By the process route provided by the invention, ultra-thin high-precision optical parts with high parallelism, high-precision flatness and low surface roughness can be processed.
Drawings
FIG. 1 is a schematic flow diagram of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings. As shown in fig. 1, taking quartz glass as an example, the method comprises the following steps:
in the first step, a quartz blank material is cut into a wafer with the diameter of 15mm and the thickness of 0.8 mm.
And secondly, putting the blank material into an annealing furnace for annealing. The ceramic plates are arranged in parallel on an alumina ceramic plate, the side surfaces are wrapped by quartz wool for heat insulation, and the upper surface is covered by the alumina ceramic plate. Firstly, the temperature is kept at 1100 ℃ for 120min, then the temperature is reduced to 950 ℃ at 20 ℃/h, and then the annealing furnace is closed, so that the part is cooled to the room temperature along with the furnace.
And thirdly, putting the wafer into a planetary wheel for double-sided grinding, and thinning the upper end face and the lower end face simultaneously to ensure that the thinning amount of the upper end face and the lower end face is the same, wherein the grinding disc is a diamond grinding disc. The parallelism of two end surfaces is required to be controlled below 0.06 mu m/mm, and the residual thickness of the part after grinding is 0.6 mm.
And fourthly, adhering the surface B of the part to a carrying disc by using asphalt or fire paint, adhering 20 pieces of the part to each disc, pressing the part by using a first-level precision optical flat crystal after adhering to keep stable loading, covering each piece of the part by using the optical flat crystal, putting the part into a heat preservation box, preserving heat for 1 hour, and setting the temperature to be 60 ℃. After cooling, the A face was ground using a cast iron pan and alumina grinding fluid to reduce the thickness by 0.135mm, 0.465mm remaining. The parameters of the grinding process are as follows: the grain diameter of the polishing powder is 5 mu m of aluminum oxide, the mass fraction is 6 percent, the grinding disc is a cast iron disc, the pressure is 0.14MPa, and the rotating speed of the grinding disc is 80 rpm.
And fifthly, finishing the surface shape of the surface A by using an asphalt ring polishing mode, and processing the surface A until the surface roughness Sa is less than 1nm and the surface shape precision PV is less than 105 nm. The technological parameters are as follows: the material of the grinding disc is asphalt, the particle size of the polishing powder is 0.5 mu m of cerium oxide, the mass fraction is 6%, the pressure is the self weight of the workpiece, the rotating speed of the grinding disc is 5-10 rpm, after the step is finished, the part is removed by 0.015mm, and the residual thickness is 0.45 mm.
And sixthly, coating the surface A processed in the fifth step on a coating base plate.
And seventhly, grinding the surface B by using a cast iron disc and alumina grinding fluid, and reducing the thickness by 0.135mm and remaining 0.315 mm. The parameters of the grinding process are as follows: the grain diameter of the polishing powder is 5 mu m of aluminum oxide, the mass fraction is 6 percent, the grinding disc is a cast iron disc, the pressure is 0.14MPa, and the rotating speed of the grinding disc is 80 rpm.
And step eight, finishing the surface shape of the B surface by using an asphalt ring polishing mode, and processing the B surface until the surface roughness Sa is less than 1nm and the surface shape precision PV is less than 105 nm. The technological parameters are as follows: the material of the grinding disc is asphalt, the particle size of the polishing powder is 0.5 mu m of cerium oxide, the mass fraction is 6%, the pressure is the self weight of the workpiece, the rotating speed of the grinding disc is 5-10 rpm, after the step is finished, the part is removed by 0.015mm, and the residual thickness is 0.3 mm.
According to the embodiment, the quartz material is processed according to the process flow, the ultrathin quartz substrate with the diameter of 15mm and the thickness of 0.3mm can be obtained, and the processing quality can reach as follows: parallelism is less than 0.06 μm/mm, surface roughness Sa is less than 1nm, reflection profile PV < 0.25 λ (λ 632nm), transmission profile PV < 0.1 λ.
The present invention is not limited to the embodiment, and any equivalent idea or change within the technical scope of the present invention is to be regarded as the protection scope of the present invention.
Claims (2)
1. A thickening-optical cement-symmetrical thinning processing method of a high-precision ultrathin optical part is characterized by comprising the following steps: the method comprises the following steps:
step one, slicing: selecting a cylindrical blank material, and barreling the excircle diameter of the cylindrical blank material to a required size; cutting the barrelled blank material into a thickness h parallel to the end face0The thickness of the wafer blank is more than 2h0Less than 3h, wherein h is the index thickness of the ultrathin part, h0And h is in cm;
step two, annealing: covering the outer cylindrical surface of the wafer blank with quartz cotton for heat insulation, covering two end surfaces with a high-heat-conductivity material, and then putting the wafer blank into an annealing furnace for annealing; the annealing temperature interval is set to be 990-1200 ℃, and the heat preservation time in the annealing temperature interval reaches t-520 (h)0/2)2min, turning off the power supply of the annealing furnace, waiting for cooling to room temperature, and taking out;
step three, double-sided grinding: putting the annealed wafer blank into a planetary gear for double-sided grinding, and thinning the upper end face and the lower end face of the wafer blank at the same time to ensure that the thinning amounts of the upper end face and the lower end face are the same; the grinding disc is a diamond bonded abrasive grinding disc, a cast iron grinding disc, a composite copper disc or a composite tin disc; during grinding, the diamond fixed abrasive grinding disc is matched with pure water for grinding, and other grinding discs are matched with silicon carbide or aluminum oxide grinding powder for grinding; during double-sided grinding, the parallelism of two end faces of the wafer blank is controlled to be below 0.06 mu m/mm, and the residual thickness of the ground part is 0.1-0.2 mm greater than the minimum thickness of the planetary wheel;
fourthly, grinding the surface A: adhering the surface B of the wafer blank to a carrying disc by using asphalt or fire paint in a dispensing manner, and flatly paving the wafer blank on the carrying disc; after bonding, using a first-level precision optical flat crystal to press the wafer blanks to keep stable loading, covering each wafer blank by the optical flat crystal, putting the wafer blanks into an insulation box to keep the temperature for 1 hour, and setting the temperature to be 60 ℃; after cooling, adopting the grinding tool in the third step to grind the surface A of the wafer blank on the single surface, and grinding the surface A, wherein the residual thickness of the ground wafer blank is 1.55 h; the surface A is one end face of the wafer blank, and the surface B is the other end face of the wafer blank;
fifthly, circularly polishing the surface A with the asphalt: keeping the wafer blank ground and thinned in the fourth step on a disc, polishing the wafer blank in an asphalt ring polishing mode, wherein the polishing solution is 0.3 mu m of aluminum oxide, the concentration is 7%, the removal amount is 0.05h, adjusting the position of the correction disc according to the surface shape of the wafer blank, and processing the flatness of the surface A to the index requirement, wherein the residual thickness of the wafer blank is 1.5 h;
sixthly, polishing the surface A: after the fifth step, the surface A of the wafer blank is subjected to optical cement to a high-precision optical cement backing plate, and the wafer blank is required to be completely attached, and the attachment surface is not allowed to have interference fringes and bubbles;
seventh step, grinding the surface B: grinding the surface B on the single side by adopting the method in the fourth step, wherein the thickness reduction amount is 0.45 h;
eighthly, circularly polishing the surface B with asphalt: and (5) polishing the B surface of the wafer blank by adopting the method in the fifth step, wherein the removal amount is 0.05h, the flatness of the B surface is processed to meet the index requirement, and the residual thickness of the wafer blank is h, so that the finished product of the ultrathin part is obtained.
2. The thickening-optical cement-symmetrical thinning processing method of the high-precision ultrathin optical part according to claim 1 is characterized in that: the high-heat-conductivity material comprises an alumina ceramic plate or a zirconia ceramic plate.
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| CN112846953B (en) * | 2021-01-27 | 2023-01-13 | 深圳陶陶科技有限公司 | Ceramic substrate and processing method and application thereof |
| CN115026636B (en) * | 2022-06-20 | 2024-02-09 | 南京三乐集团有限公司 | Preparation method for sheet mirror finish |
| CN115338694B (en) * | 2022-07-01 | 2024-02-02 | 金华博蓝特新材料有限公司 | Processing method of double-sided polished wafer |
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