CN109824248B - Precision machining method of ultrathin quartz plate - Google Patents
Precision machining method of ultrathin quartz plate Download PDFInfo
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- CN109824248B CN109824248B CN201910191964.1A CN201910191964A CN109824248B CN 109824248 B CN109824248 B CN 109824248B CN 201910191964 A CN201910191964 A CN 201910191964A CN 109824248 B CN109824248 B CN 109824248B
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Abstract
The invention provides a precision processing method of an ultrathin quartz plate, belonging to the field of optical processing. The method comprises the steps of firstly, placing a quartz blank material into an annealing furnace for precision annealing. Secondly, adhering the B surface of the blank to a carrying disc, thinning the A surface by grinding and grinding processes, and polishing the A surface to remove a grinding damage layer after the A surface is thinned to a specified thickness; finishing the surface shape of the surface A, and processing the surface quality and the surface shape precision of the surface A to the final index requirement; and corroding the processed surface to remove the polishing influence layer. And finally, the part is placed on the bottom plate, the processed surface A is subjected to polishing glue on a polishing glue backing plate, and the surface B is processed by the same method. The invention is a low-cost, high-efficiency and high-precision processing method of the ultrathin quartz plate, and a finished product cannot generate deformation due to the change of internal stress after the material is removed; the invention effectively solves the problem of stress deformation which is a core problem in the precision processing of the ultrathin quartz material, and in addition, the implementation of the invention does not need to depend on a high-precision machine tool, thereby being suitable for batch production.
Description
Technical Field
The invention belongs to the field of optical processing, and relates to a precision processing method of an ultrathin quartz material.
Background
With the rapid development of modern science and technology, the ultrathin quartz plate is widely applied to high-precision optical systems, photoelectric systems and precise mechanical systems, such as laser devices, photoetching mask plates, gyroscope vibrators, resonant accelerometers, planar optical elements, transmission terahertz elements and the like.
At present, the processing method of the high-precision optical part mainly comprises the polishing processes of an asphalt ring polishing method, a double-sided polishing method, ion beam shape modification, magnetorheological polishing and the like. The main difficulty in processing ultrathin optical parts is various deformations including cementing deformation, thermal deformation, stress deformation and the like. The method for processing the ultrathin part by adopting the asphalt ring polishing method and generally matching with means such as thickening, polishing and the like can effectively reduce the influence of cementation deformation and thermal deformation, but does not solve the problem of stress deformation; the double-side polishing method needs to use a retainer to drive the part and the grinding disc to move relatively, the thickness of the retainer must be smaller than that of the part, and when the thickness is smaller than a certain degree, on one hand, the retainer can be torn due to insufficient strength, and on the other hand, the part is easy to break out of the retainer to cause crushing; the ion beam modification is the processing method with the highest precision at present, can realize the removal of atomic-level surface materials, but has the defects of low processing efficiency, high processing cost and the like, and is not suitable for batch production; the magnetorheological polishing technology can process higher surface quality and surface shape precision, but cannot solve the deformation problem of ultrathin parts after the ultrathin parts are coiled, and on the other hand, special polishing equipment is complex and expensive, requires extremely high position precision, and is not suitable for high-precision batch processing of the ultrathin parts.
Patent CN103847032A introduces a production process of large-caliber ultrathin quartz wafer, which adopts a photoresist plate liquid wax bonding method to solve the problems of serious deformation and difficult control in the wafer processing process. But because of the influence of the solidification shrinkage of the wax layer, even if the wax layer is uniformly coated, the cementing deformation cannot be avoided, and meanwhile, the production process has no effective control means of stress deformation. Patent CN102528645A introduces a double-side polishing method for large-sized ultra-thin quartz glass sheet, which utilizes a flat die or a flat plate to smooth the planetary wheel generating thermal deformation, prevents the ultra-thin quartz glass sheet from coming out, and improves the yield of the process. The process method utilizes a double-sided polishing method to process ultrathin parts, avoids deformation caused by cementation, but cannot reduce deformation caused by stress. In addition, the process method needs to observe and trim the wandering star wheel frequently, on one hand, the experience of workers is excessively relied on, on the other hand, the processing time is greatly prolonged, and the working strength of the workers is increased. Patent CN101456668A introduces a high precision ultra-thin glass substrate preparation process, which is a high precision processing method for obtaining glass substrates with thickness of 1.6mm and 2.3mm by using a double-sided polishing method through optimization of components and process parameters of polishing solution. But the influence of stress deformation is not considered in the process, and the index requirement of nano-scale precision is difficult to meet; and when the part is thinned to the thickness of hundreds of microns, the double-sided polishing method is difficult to process.
In conclusion, the stress deformation in the processing of the ultrathin quartz plate is not effectively solved. The stress problem affecting the deformation of the ultrathin quartz material mainly has two aspects: 1) processing damage layer stress of the surface; 2) and releasing internal stress in the thinning process. The invention provides a precision processing method of an ultrathin quartz material, which can effectively reduce the stress deformation of ultrathin parts and is suitable for the production and processing of ultrathin quartz substrates with nanoscale precision in batches.
Disclosure of Invention
The invention aims to solve the technical problem of stress deformation in the processing of ultrathin quartz materials, and provides a low-cost, high-efficiency and high-precision processing method of ultrathin quartz materials, which meets the index requirement of the nanometer surface shape precision of precise optical, mechanical and electronic system elements.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a precision processing method of an ultrathin quartz plate comprises the following steps:
firstly, selecting a quartz blank material with an initial diameter-thickness ratio of 5-15.
And secondly, placing the quartz blank material into an annealing furnace for precision annealing. The annealing process is divided into 4 stages: 1) in the temperature rise stage, the blank is rapidly heated to the annealing temperature range of the material; 2) in the heat preservation stage, the temperature is preserved for a long enough time in the annealing temperature range, and the internal stress of the blank is eliminated; 3) in the slow cooling stage, the temperature is slowly reduced to the temperature of the strain point of the material; 4) and a fast cooling stage, namely, after the temperature of the blank is completely reduced to be below a strain point, closing the annealing furnace, and cooling the part to room temperature along with the furnace.
In the temperature rise stage, the highest temperature rise rate is set as 220 ℃/min, and the actual temperature rise rate is not higher than the highest temperature rise rate; the annealing temperature interval is at the strain point temperature T of the materiale(viscosity η ═ 1013.6Pa.s) and annealing point temperature Ta(viscosity η ═ 1012Pa.s) between 990 ℃ and 1200 ℃ in general. SaidA heat preservation stage, the heat preservation time is not less than t ═ 520a2(min), wherein a is half the part thickness in centimeters. In the slow-down stage, the cooling rate is not higher than
Thirdly, adhering the B surface of the blank to a carrying disc, thinning the A surface by grinding and grinding processes, and thinning the thickness by 0.5 (h)0-h), wherein h0The initial thickness of the part is h, and the index thickness of the part is h. And after the specified thickness is reduced, polishing the surface A by adopting cerium oxide or silicon dioxide polishing solution and a polyurethane polishing pad, and removing the grinding damage layer.
And fourthly, finishing the surface shape of the surface A in an asphalt ring polishing mode, and processing the surface quality and the surface shape precision of the surface A to the final index requirements.
And fifthly, corroding the processed surface and removing the polishing influence layer. Preparing a special corrosive liquid, which comprises the following components: and (3) corroding the surface A for 5min by using 5 wt% of hydrofluoric acid, 15 wt% of ammonium fluoride and 80 wt% of deionized water, and removing the polishing damage layer.
And sixthly, the part is placed on a bottom plate, the processed surface A is subjected to polishing glue on a polishing glue base plate, and the surface B is processed by the method in the step 3.
And seventhly, processing the surface B by adopting the method in the fourth step.
And eighthly, processing the surface B by adopting the method in the fifth step.
The invention has the beneficial effects that: the thickness of the finished product of the ultrathin quartz material processed by the process method is symmetrical about the middle plane of the blank, and the force and the moment formed by the internal stress are zero, so that the ultrathin quartz material cannot deform due to the change of the internal stress after the material is removed; and (4) carrying out corrosion treatment after the processed surface is polished, removing the processing damage layer on the surface, and eliminating the stress of the processing damage layer on the processed surface. Therefore, the method effectively solves the problem of stress deformation which is a core problem in the precision processing of the ultrathin quartz material, does not need to depend on a high-precision machine tool, is suitable for batch production, and is a low-cost, high-efficiency and high-precision ultrathin quartz piece processing method.
Detailed Description
The present invention will be described in further detail below with reference to specific embodiments.
The processing method comprises the following steps:
firstly, selecting a quartz blank material with the initial diameter of 30mm and the thickness of 3 mm.
And secondly, placing the quartz blank into an annealing furnace for precision annealing. The annealing process is divided into 4 stages: 1) in the temperature rise stage, the temperature rise rate is set to be 500 ℃/h, and the temperature rises to 1100 ℃; 2) a heat preservation stage, wherein the heat preservation temperature is 1100 ℃, and the heat preservation time is 120 min; 3) in the slow-lowering stage, the cooling rate is set to be 20 ℃/h, the temperature is lowered to 950 ℃, and the cooling time is 450 min; 4) and (5) quickly reducing the stage, closing the annealing furnace, and cooling the part to room temperature along with the furnace. The parts are arranged on the ceramic plate in parallel, the side surface is wrapped by quartz wool for heat insulation, and the upper surface and the lower surface of the blank are covered by the ceramic plate made of the same material in order to ensure that the cooling rates of the upper surface and the lower surface of the blank are basically consistent. The internal stress of the annealed blank is in an axial direction and is in secondary parabolic distribution, and the stress distribution is symmetrical about a middle plane and is expressed as external pressure and internal pulling.
And thirdly, adhering the B surface of the blank to a carrying disc, grinding the A surface by using a cast iron disc and alumina grinding fluid, and reducing the thickness by 1.35 mm. The parameters of the grinding process are as follows: the grain diameter of the polishing powder is 5 mu m of aluminum oxide, the mass fraction is 6 percent, the grinding disc is a cast iron disc, the pressure is 0.14MPa, and the rotating speed of the grinding disc is 80 rpm. And (5) polishing the surface A after thinning until the surface roughness Sa is less than 1nm, and removing the grinding damage layer. The technological parameters are as follows: the particle size of the polishing powder is 0.5 mu m, the mass fraction of the cerium oxide is 6 percent, the polishing pad is made of polyurethane material, the pressure is 0.14MPa, and the rotating speed of a grinding disc is 80 rpm.
Fourthly, the surface shape of the surface A is trimmed in an asphalt ring polishing mode, and the surface A is processed to the surface roughness Sa smaller than 1nm and the surface shape precision
The technological parameters are as follows: the grinding disc is made of asphalt, the particle size of the polishing powder is 0.5 mu m, the mass fraction of the cerium oxide is 6%, the pressure is the self weight of a workpiece, and the rotating speed of the grinding disc is 5-10 rpm.
Fifthly, preparing a special corrosive liquid, which comprises the following components: and (3) corroding the surface A for 5min by using 5 wt% of hydrofluoric acid, 15 wt% of ammonium fluoride and 80 wt% of deionized water, and removing the polishing damage layer.
And sixthly, the part is placed on a bottom plate, the processed surface A is subjected to polishing glue on a polishing glue backing plate, and the surface B is processed by adopting the process in the step 3.
And seventhly, processing the surface B by adopting the process in the step 4.
And eighthly, processing the surface B by adopting the process in the step 5.
According to the embodiment, the quartz material is processed according to the process flow, the ultrathin quartz substrate with the diameter of 30mm and the thickness of 0.3mm can be obtained, and the processing quality can reach as follows: the surface roughness Sa is less than 1nm, the reflection profile PV is less than 0.25 lambda (lambda is 632nm), and the transmission profile PV is less than 0.1 lambda.
The above-mentioned embodiments only express the embodiments of the present invention, but not should be understood as the limitation of the scope of the invention patent, it should be noted that, for those skilled in the art, many variations and modifications can be made without departing from the concept of the present invention, and these all fall into the protection scope of the present invention.
Claims (5)
1. A precision processing method of an ultrathin quartz plate is characterized by comprising the following steps:
firstly, selecting a quartz blank material with an initial diameter-thickness ratio of 5-15;
secondly, putting the quartz blank material into an annealing furnace for precision annealing; the annealing process is divided into 4 stages: 1) a temperature rising stage, namely rapidly heating the blank to an annealing temperature range of the material, wherein the annealing temperature range is at the strain point temperature T of the materialeAnd annealing point temperature TaTo (c) to (d); 2) a heat preservation stage, in which the internal stress of the blank is eliminated by heat preservation in an annealing temperature interval, wherein the heat preservation time is not less than t 520a2(min), wherein a is half the part thickness in centimeters; 3) in the slow cooling stage, the temperature is slowly reduced to the temperature of the strain point of the material; 4) in the fast phase reduction stage, the annealing furnace is closed, and the part is cooled to room temperature along with the furnace; in the heating stage, the heating rate is not higher than 220 DEG CMin, the annealing temperature range is 990-1200 ℃; in the slow-down stage, the cooling rate is not higher than
Thirdly, adhering the B surface of the blank to a carrying disc, thinning the A surface by grinding and grinding processes, and thinning the thickness by 0.5 (h)0-h), wherein h0The initial thickness of the part is h, and the index thickness of the part is h; polishing the surface A after the designated thickness is reduced, and removing a grinding damage layer;
fourthly, finishing the surface shape of the surface A, and processing the surface quality and the surface shape precision of the surface A to the final index requirement;
fifthly, corroding the processed surface and removing the polishing influence layer;
sixthly, the part is placed on a bottom plate, the processed surface A is subjected to polishing glue on a polishing glue base plate, and the surface B is processed by adopting the method in the step 3;
seventhly, processing the surface B by adopting the method in the fourth step;
and eighthly, processing the surface B by adopting the method in the fifth step.
2. A method for precision processing of an ultra-thin quartz plate as claimed in claim 1, wherein said third step is a step of polishing the a-side with a polishing solution of cerium oxide or silicon dioxide and a polyurethane polishing pad.
3. The method for precisely machining an ultrathin quartz plate as claimed in claim 1 or 2, wherein the surface shape of the A surface is trimmed by means of asphalt ring polishing in the fourth step.
4. A precision processing method for an ultra-thin quartz plate according to claim 1 or 2, characterized in that the special etching solution used in the fifth step has the following components: and (3) etching the A surface for 5min by using 5 wt% of hydrofluoric acid, 15 wt% of ammonium fluoride and 80 wt% of deionized water.
5. The method for precisely processing the ultrathin quartz plate as claimed in claim 3, wherein the special etching solution adopted in the fifth step comprises the following components: and (3) etching the A surface for 5min by using 5 wt% of hydrofluoric acid, 15 wt% of ammonium fluoride and 80 wt% of deionized water.
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| CN113211305B (en) * | 2020-01-19 | 2023-02-14 | 山东浪潮华光光电子股份有限公司 | Method and tool for polishing gallium arsenide LED chip after grinding |
| CN111644906B (en) * | 2020-06-02 | 2021-09-21 | 大连理工大学 | Thickening-optical cement-symmetrical thinning processing method for high-precision ultrathin optical part |
| CN111958462A (en) * | 2020-09-04 | 2020-11-20 | 青岛微科光电技术有限公司 | Optical cement plate feeding method |
| CN112621557B (en) * | 2020-12-17 | 2022-08-09 | 江苏集萃精凯高端装备技术有限公司 | Polishing method of YAG wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4412886A (en) * | 1982-04-08 | 1983-11-01 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of a ferroelectric substrate plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4412886A (en) * | 1982-04-08 | 1983-11-01 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of a ferroelectric substrate plate |
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