CN113211305B - Method and tool for polishing gallium arsenide LED chip after grinding - Google Patents

Method and tool for polishing gallium arsenide LED chip after grinding Download PDF

Info

Publication number
CN113211305B
CN113211305B CN202010059978.0A CN202010059978A CN113211305B CN 113211305 B CN113211305 B CN 113211305B CN 202010059978 A CN202010059978 A CN 202010059978A CN 113211305 B CN113211305 B CN 113211305B
Authority
CN
China
Prior art keywords
chip
ceramic disc
polishing
ceramic
wax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010059978.0A
Other languages
Chinese (zh)
Other versions
CN113211305A (en
Inventor
郑军
李琳琳
齐国健
闫宝华
王成新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Inspur Huaguang Optoelectronics Co Ltd
Original Assignee
Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Inspur Huaguang Optoelectronics Co Ltd filed Critical Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority to CN202010059978.0A priority Critical patent/CN113211305B/en
Publication of CN113211305A publication Critical patent/CN113211305A/en
Application granted granted Critical
Publication of CN113211305B publication Critical patent/CN113211305B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Abstract

The invention discloses a method and a tool for polishing a gallium arsenide LED chip after grinding, wherein the tool comprises an upper plate and a lower plate, and the upper plate and the lower plate are connected through a fixing bolt; and a handle is arranged on one side of the upper plate, and a fixing groove for fixing the ceramic disc is arranged on the inner side surface of the lower plate. The method comprises the following steps: adhering the front surface of the chip on a ceramic disc by using wax; placing the ceramic disk with the chip under a tablet press for tabletting; adsorbing the ceramic disc on a sucking disc of a mechanical arm of a grinding machine to grind the chip substrate; brushing the ceramic disc; putting the ceramic disc into a tool, and immersing the ceramic disc into a polishing reagent for corrosion and polishing; washing the ceramic disc; and heating the ceramic disc, and taking down the chip. The method can effectively improve the polishing efficiency after grinding, avoid the damage of the front surface of the chip and improve the efficiency, quality and safety of corrosion polishing.

Description

Method and tool for polishing gallium arsenide LED chip after grinding
(I) the technical field
The invention relates to the technical field of semiconductor material processing, in particular to a method and a tool for polishing a gallium arsenide LED chip after grinding.
(II) background of the invention
With the continuous development of the technology, the LED chip is continuously developed to high density, high performance, miniaturization and lightness. Among them, the thinning of the device has become one of the important development directions of the power device and the photovoltaic device. On one hand, the thin sheet can reduce the on-resistance and the voltage drop of the device, thereby greatly reducing the on-loss of the device, improving the performance of the device in the aspect of heat dissipation, and preventing the light output characteristic and the service life of the LED chip from being influenced by the overhigh temperature rise of the active area of the LED chip; on the other hand, in order to meet the requirements of subsequent processes such as scribing, splitting and the like in the LED chip process, the thickness of the chip substrate needs to be reduced to a certain degree; on the other hand, the thin sheet is beneficial to reducing the space for packaging the device, and the miniaturization and the lightness of the whole packaging module are realized. Therefore, in the LED chip manufacturing process, the reduction of the chip substrate thickness is a very important process.
In the prior art, a grinding machine is mainly adopted to mechanically grind a chip substrate, namely, when the chip substrate is ground and thinned, the front surface of a chip is attached to a ceramic disc (a chip-thinning patch workpiece), and the chip substrate is ground and thinned by the friction force of mutual extrusion due to the contact of an equipment mechanical arm and a grinding disc. The gallium arsenide substrate after grinding always has a certain damage layer, and if the damage layer is too deep, the quality of subsequent cutting can be directly influenced. At present, the general method is that the polished chip is subjected to a polishing operation of chemical corrosion, and a damaged layer on the surface layer of the chip is eaten away by a chemical reagent, so that the purpose of removing the damaged layer on the back surface after the chip is polished is achieved. The method comprises the steps of obtaining a chip with a clean surface by dewaxing and cleaning after grinding the chip, coating a layer of photoresist on the surface of the chip (the photoresist plays a role of protecting the front surface of the chip when a substrate is corroded and polished), putting the chip into a chemical reagent for corrosion polishing, and taking out the chip after polishing, wherein the method has more steps, complicated process and low fault-tolerant rate; the chemical reagent reacts violently and emits a large amount of heat, and the photoresist coated on the front surface of the chip is often damaged, so that the front surface of the chip cannot be well protected, and the abnormal result that the front surface of the chip is damaged or even scrapped is caused; there is no good solution in the existing operation when etching and polishing the substrate.
Disclosure of the invention
In order to overcome the problems in the prior art, the invention provides a method and a tool for polishing a gallium arsenide LED chip after grinding, which can effectively improve the polishing efficiency after grinding, avoid the damage of the front surface of the chip and improve the efficiency, the quality and the safety of corrosion polishing.
The invention is realized by the following technical scheme:
a tool for polishing a gallium arsenide LED chip after grinding comprises an upper plate and a lower plate, wherein the upper plate and the lower plate are connected through a fixing bolt; and a handle is arranged on one side of the upper plate.
Preferably, a fixing groove for fixing the ceramic disc is formed in the inner side face of the lower plate, and the cross section of the circumferential contact surface of the fixing groove and the ceramic disc is in a major arc shape.
Preferably, a plurality of plate holes are formed in the upper plate and the lower plate.
A method for polishing a gallium arsenide LED chip after grinding comprises the following steps:
a. surface mounting: heating the ceramic disc, smearing wax on the surface of the heated ceramic disc, and then adhering the front surface of the chip to be ground on the ceramic disc through the wax;
b. tabletting: placing the ceramic disk with the chip under a tablet press for tabletting;
c. grinding: adsorbing the ceramic disc on a sucking disc of a mechanical arm of a grinding machine to grind the chip substrate;
d. rinsing: rinsing the ground chip;
e. polishing: placing the ceramic disc with the chip in the fixing groove of the tool according to any one of claims 1 to 3, wherein the chip-bearing surface of the ceramic disc faces upwards, and immersing the ceramic disc into a polishing reagent by using the tool for corrosion polishing;
f. and (3) flushing: after the polished ceramic disc is lifted by a tool, the ceramic disc is placed under a pure water faucet for washing;
g. and (3) sheet preparation: and (4) reheating the washed ceramic disc, and taking down the chip after the wax is melted.
Preferably, the heating device used for heating the ceramic plate in the step a is a flat heater, and the heating maintaining temperature of the flat heater is 90 +/-5 ℃.
Preferably, in step b, the tablet press platform is also heated to a temperature of 90 ± 5 ℃.
Preferably, the washing reagent used in the step d is a sodium carbonate solution, and the mass ratio of sodium carbonate in the sodium carbonate solution to pure water is 1 (5-10).
Preferably, in the step e, the main components of the polishing reagent comprise ammonia water, hydrogen peroxide and pure water.
Preferably, in step f, the ceramic disk is rinsed for not less than two minutes.
Preferably, in the step f, the heating device for heating the ceramic disc washed in the step g is a flat heater, and the heating maintaining temperature of the flat heater is 105 +/-5 ℃.
The beneficial effects of the invention are:
1. set up the fixed slot of major arc cross-section on the frock, can enough avoid ceramic dish slip and heeling to appear with stable the placing of ceramic dish on the hypoplastron, make things convenient for placing and taking off of ceramic dish again, the frock structure can not lead to aggravating operating personnel's burden too greatly again simultaneously.
2. The upper plate and the lower plate of the tool are provided with a plurality of plate holes, so that the weight of the tool is favorably reduced, and the burden of an operator is further reduced.
3. The chip which is ground on the ceramic disc does not need to be detached from the ceramic disc, and then the front side of the chip is coated with photoresist and then is subjected to corrosion polishing, so that the process flow is greatly simplified.
4. The chip is stuck to the ceramic disc by the wax, the sealing adhesion between the chip and the ceramic disc is high, the wax can protect the front of the chip, the protection effect is better than that of the photoresist, and the condition that the front of the chip is corroded due to the fact that the photoresist is damaged in the prior art can be avoided.
5. The ceramic disc with the chip is placed into the polishing reagent through the tool for corrosion polishing, the method that the ceramic disc is directly immersed into the polishing reagent in the prior art is improved, the operation efficiency is improved, the polishing corrosion time can be controlled more accurately, the polishing quality is improved, and meanwhile, the operation safety is improved.
Description of the drawings
The invention will be further described with reference to the accompanying drawings.
Fig. 1 is a schematic view of the tool structure of the present invention.
FIG. 2 is a schematic view of the tool with a ceramic disk according to the present invention.
In the figure, 1-upper plate, 2-lower plate, 3-fixing bolt, 4-fixing groove, 5-handle, 6-plate hole, 7-ceramic plate and 8-chip.
(V) detailed description of the preferred embodiments
In order to make the technical solution of the present invention better understood, the technical solution of the present invention will be further described with reference to the accompanying drawings.
Example 1
Referring to fig. 1 to 2, a gallium arsenide LED chip polishing tool comprises an upper plate 1 and a lower plate 2, wherein the upper plate 1 and the lower plate 2 are connected by a fixing bolt 3; the upper plate 1 is provided with the handle 5 on one side, and the tool is mainly used for polishing gallium arsenide LED chips after grinding, an operator places the side, with the chip 8, of the ceramic disc 7 attached with the chip 8 on the lower plate 2 upwards, and then holds the handle 5 to immerse the ceramic disc 7 into a polishing reagent for corrosion polishing. Preferably, the inner side surface of the lower plate 2 is provided with a fixing groove 4 for fixing the ceramic disk 7, and the section of the circumferential contact surface between the fixing groove 4 and the ceramic disk 7 is an arc, so that the ceramic disk 7 is prevented from sliding on the lower plate 2 after being immersed in a polishing reagent; the sectional shape of the fixing groove 4 is a major arc, the major arc is larger than the arc shape of a semicircle, two endpoints of the major arc are connected through a chord to form a major arc section, and the stability of the ceramic disc 7 in the fixing groove 4 can be improved by arranging the fixing groove 4 with the major arc section, so that the ceramic disc 7 is prevented from falling. The sectional shape of the holding groove 4 may be a full circle, but the ceramic disk 7 is not easily removed as the major arc sectional shape.
All be equipped with a plurality of plate holes 6 on upper plate 1 and the hypoplastron 2, can alleviate the weight of frock, the burden of frock when lightening operating personnel and holding.
A method for polishing a gallium arsenide LED chip after grinding is characterized by comprising the following steps: the method comprises the following steps:
a. surface mounting: heating the ceramic disk 7, smearing wax on the surface of the heated ceramic disk 7, and then adhering the front surface of the chip 8 to be ground on the ceramic disk 7 through the wax;
b. tabletting: placing the ceramic disk 7 with the chip 8 under a tablet press for tabletting;
c. grinding: adsorbing the ceramic disk 7 on a sucking disk of a mechanical arm of the grinding machine to grind the substrate of the chip 8;
d. rinsing: rinsing the ground chip 8;
e. polishing: placing the ceramic disk 7 with the chip 8 in the fixing groove 4 of the tool, enabling one surface of the ceramic disk 7 with the chip 8 to face upwards, and immersing the ceramic disk 7 into a polishing reagent by using the tool for corrosion polishing;
f. washing: lifting the polished ceramic disc 7 out by a tool, and then putting the ceramic disc under a pure water faucet for washing;
g. and (3) sheet preparation: and (4) reheating the washed ceramic disk 8, and taking down the chip 8 after the wax is melted.
In the step a, the heating device for heating the ceramic disc 7 is a flat heater, in this embodiment, the heating temperature of the flat heater is 85 ℃, the wax can be melted at this temperature, the surface of the heated ceramic disc 7 is coated with the wax by using a solid wax rod, and the front surface of the chip 8 is adhered to the ceramic disc 7 through the melted wax to protect the front surface of the chip 8.
In the step b, the tablet press platform is also heated, the heating temperature is 85 ℃, so that when tablet pressing is carried out, because wax is melted, redundant wax can be extruded out through the tablet press, a wax layer is uniformly coated between the chip and the ceramic disc, the redundant wax which runs out can be ground off in the next grinding process, and the pressure of the tablet press is set to be 0.6MPa.
In the step c, the ceramic disc 7 is adsorbed on a sucker of a mechanical arm of the grinding machine to grind the substrate of the chip 8, the adsorption set vacuum value of the ceramic disc is greater than 70KPa, the ceramic disc 7 is prevented from falling off due to gravity, the rotating speed of the grinding disc is 25r/min, the rotating speed of the sucker of the mechanical arm is 50r/min, the grinding pressure is 25kg, and the thinning of the chip 8 is completed through the friction force of mutual extrusion.
In the step d, after the chip is ground, rinsing is performed to rinse off dirt generated in the chip grinding process, the washing reagent used in the step d is a sodium carbonate solution, and in this embodiment, the mass ratio of sodium carbonate to pure water in the sodium carbonate solution is 1.
In the step e, the ceramic disc 7 with the chip 8 is placed in the fixing groove 4 of the tool, one surface of the ceramic disc 7 with the chip 8 faces upwards, the tool is used for immersing the ceramic disc 7 into a polishing reagent for corrosion and polishing, the main components of the polishing reagent comprise ammonia water, hydrogen peroxide and pure water, when the polishing reagent is configured in the embodiment, the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 2. The uniformity of etching can be improved by shaking the ceramic disk 7. The ceramic disc with the chip is placed into the polishing reagent through the tool for corrosion polishing, the method that the ceramic disc is directly immersed into the polishing reagent in the prior art is improved, the operation efficiency is improved, the polishing corrosion time can be controlled more accurately, the polishing quality is improved, and meanwhile, the operation safety is improved.
In the step f, the polished ceramic disc 7 is lifted by a tool and then is placed under a pure water faucet for washing for 2min, and the polishing reagent is thoroughly washed away.
In step g, the ceramic disc 7 after washing is reheated, and the chip 8 is removed after the wax is melted. The heating device for heating the washed ceramic disc 7 is a flat heater, the heating temperature of the flat heater is kept at 100 ℃, the ceramic disc 7 is placed on the flat heater, so that the wax of the ceramic disc 7 is completely melted, and after the wax is melted, the chip 8 is taken down by using tweezers.
Example 2
The method and the tooling of the embodiment are the same as those of the embodiment 1, and the process parameters are adjusted as follows: in the step a, heating the flat heater to keep the temperature at 90 ℃; in the step b, the heating temperature of the platform of the tablet press is 90 ℃; in the step d, the mass ratio of sodium carbonate in the sodium carbonate solution to pure water is 1; in the step e, the volume ratio of ammonia water, hydrogen peroxide and pure water in the polishing reagent is 3; in step g, the heating of the plate heater was maintained at 105 ℃.
The rest is the same as in example 1.
Example 3
The method and the tooling of the embodiment are the same as those of the embodiment 1, and the process parameters are adjusted as follows: in the step a, heating the flat heater to keep the temperature at 95 ℃; in the step b, the heating temperature of the platform of the tablet press is 95 ℃; in the step d, the mass ratio of sodium carbonate in the sodium carbonate solution to pure water is 1; in the step e, the volume ratio of ammonia water, hydrogen peroxide and pure water in the polishing reagent is 2; in step g, the flat heater was heated to maintain a temperature of 110 ℃.
The rest is the same as in example 1.
In the description of the present invention, the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for the purpose of describing the present invention but do not require that the present invention be necessarily constructed or operated in a specific orientation, and thus, should not be construed as limiting the present invention. The terms "connected" and "connected" in the present invention should be interpreted broadly, and may be connected or disconnected, for example; the terms may be directly connected or indirectly connected through intermediate components, and specific meanings of the terms may be understood as specific conditions by those skilled in the art.
The foregoing is a description of the preferred embodiments of the present invention, and the detailed description is given for the sole purpose of understanding the concepts of the present invention. It will be appreciated by those skilled in the art that various modifications and equivalents may be made in accordance with the principles of the invention and are considered to be within the scope of the invention.

Claims (7)

1. The utility model provides a frock of gallium arsenide LED chip polishing after grinding which characterized in that: the device comprises an upper plate (1) and a lower plate (2), wherein the upper plate (1) and the lower plate (2) are connected through a fixing bolt (3); a handle (5) is arranged on one side of the upper plate (1);
the inner side surface of the lower plate (2) is provided with a fixing groove (4) for fixing a ceramic disc (7) serving as a chip thinning patch workpiece, the section of the circumferential contact surface of the fixing groove (4) and the ceramic disc (7) is in an arc shape, one surface of the ceramic disc with the chip is placed in the fixing groove of the lower plate upwards, and the front surface of the chip is adhered to the ceramic disc through wax;
and a plurality of plate holes (6) are formed in the upper plate (1) and the lower plate (2).
2. A method for polishing a gallium arsenide LED chip after grinding is characterized by comprising the following steps: the method comprises the following steps:
a. patching: heating the ceramic disc (7), smearing wax on the surface of the heated ceramic disc (7), and then adhering the front surface of the chip (8) to be ground on the ceramic disc (7) through the wax;
b. tabletting: placing the ceramic disc (7) adhered with the chip (8) under a tablet press for tabletting, heating a platform of the tablet press to 90 +/-5 ℃, so that wax is melted during tabletting, and extruding redundant wax through the tablet press to uniformly coat a wax layer between the chip and the ceramic disc;
c. grinding: adsorbing the ceramic disc (7) on a sucking disc of a mechanical arm of the grinding machine to grind the substrate of the chip (8);
d. rinsing: washing the ground chip (8);
e. polishing: placing the ceramic disc (7) with the chip (8) in the fixing groove (4) of the tool according to claim 1, enabling the surface of the ceramic disc (7) with the chip (8) to face upwards, and immersing the ceramic disc (7) into a polishing agent by the tool for corrosion polishing;
f. washing: after the polished ceramic disc (7) is lifted by a tool, the ceramic disc is placed under a pure water faucet for washing;
g. and (3) sheet preparation: and (4) reheating the washed ceramic disc (7), and taking down the chip (8) after the wax is melted.
3. The method of claim 2, wherein the polishing step comprises the following steps: in the step a, a heating device for heating the ceramic disc (7) is a flat heater, and the heating temperature of the flat heater is 90 +/-5 ℃.
4. The method of claim 2, wherein the polishing step comprises the following steps: and d, using a sodium carbonate solution as a washing reagent, wherein the mass ratio of sodium carbonate to pure water in the sodium carbonate solution is 1 (5-10).
5. The method of claim 2, wherein the polishing step comprises the following steps: in the step e, the main components of the polishing reagent comprise ammonia water, hydrogen peroxide and pure water.
6. The method of claim 2, wherein the polishing step comprises the following steps: in step f, the ceramic disc (7) is rinsed for not less than two minutes.
7. The method of claim 2, wherein the polishing step comprises the following steps: in step g, the ceramic plate (7) after washing is heated by a flat heater, the heating temperature of which is 105 +/-5 ℃.
CN202010059978.0A 2020-01-19 2020-01-19 Method and tool for polishing gallium arsenide LED chip after grinding Active CN113211305B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010059978.0A CN113211305B (en) 2020-01-19 2020-01-19 Method and tool for polishing gallium arsenide LED chip after grinding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010059978.0A CN113211305B (en) 2020-01-19 2020-01-19 Method and tool for polishing gallium arsenide LED chip after grinding

Publications (2)

Publication Number Publication Date
CN113211305A CN113211305A (en) 2021-08-06
CN113211305B true CN113211305B (en) 2023-02-14

Family

ID=77085024

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010059978.0A Active CN113211305B (en) 2020-01-19 2020-01-19 Method and tool for polishing gallium arsenide LED chip after grinding

Country Status (1)

Country Link
CN (1) CN113211305B (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431021B (en) * 2008-12-11 2010-09-08 上海合晶硅材料有限公司 Processing method of thin silicon monocrystal polished section
CN103811329A (en) * 2012-11-10 2014-05-21 王红亚 Novel thinning technology
CN204538002U (en) * 2015-03-31 2015-08-05 上海超硅半导体有限公司 Silicon chip flower basket clamping device
CN106098864A (en) * 2016-06-28 2016-11-09 山东浪潮华光光电子股份有限公司 A kind of pasting method in LED gallium arsenide substrate reduction process
CN109986459B (en) * 2017-12-29 2021-04-06 山东浪潮华光光电子股份有限公司 Heat dissipation tool for surface-mounted ceramic disc in LED chip substrate thinning process and application of heat dissipation tool
CN109824248B (en) * 2019-03-14 2020-09-11 大连理工大学 Precision machining method of ultrathin quartz plate
CN110328606A (en) * 2019-06-27 2019-10-15 浙江晶盛机电股份有限公司 A kind of full-automatic integral formula monolithic single side grinding stripping apparatus

Also Published As

Publication number Publication date
CN113211305A (en) 2021-08-06

Similar Documents

Publication Publication Date Title
US10796913B2 (en) Method for hybrid wafer-to-wafer bonding
US6743722B2 (en) Method of spin etching wafers with an alkali solution
JP2005533376A (en) Method and wafer for maintaining ultra-clean bonding pads on a wafer
JP2008503900A (en) Vertical semiconductor device providing improved light output
US20070232030A1 (en) Semiconductor-wafer processing method using fluid-like layer
CN111009496B (en) Semiconductor substrate with high thermal conductivity and preparation method thereof
US7960247B2 (en) Die thinning processes and structures
CN102522326A (en) Production method of semiconductor discrete device back side metal suitable for screen printing
CN112447590B (en) Wafer dicing method based on water-guided laser processing technology
CN112259495A (en) Wafer printing process
CN113211305B (en) Method and tool for polishing gallium arsenide LED chip after grinding
TW202303720A (en) Method of manufacturing chips
CN108231648A (en) Patch tooling and pasting method in a kind of GaAs base LED chips reduction process
KR20050053314A (en) Wafer processing method and wafer processing apparatus
JP2005340431A5 (en)
WO2021056778A1 (en) Welding process for cladding copper on back surface of wafer
US7059942B2 (en) Method of backgrinding wafers while leaving backgrinding tape on a chuck
CN111599753B (en) Thin wafer cooling fin and manufacturing process thereof
TWI720936B (en) Compound semiconductor element and its back copper manufacturing process method
CN109986459B (en) Heat dissipation tool for surface-mounted ceramic disc in LED chip substrate thinning process and application of heat dissipation tool
CN112242352A (en) Wafer cutting method and circuit board
JP2002141311A (en) Wafer polishing method and wafer washing method
CN113764968B (en) Method for removing epitaxial wafer substrate
KR100395754B1 (en) A singular method for semiconductor package
CN104835882B (en) Inverted high-efficiency flexible gallium arsenide solar cell and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant