JP2005340431A5 - - Google Patents

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Publication number
JP2005340431A5
JP2005340431A5 JP2004156054A JP2004156054A JP2005340431A5 JP 2005340431 A5 JP2005340431 A5 JP 2005340431A5 JP 2004156054 A JP2004156054 A JP 2004156054A JP 2004156054 A JP2004156054 A JP 2004156054A JP 2005340431 A5 JP2005340431 A5 JP 2005340431A5
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JP
Japan
Prior art keywords
manufacturing
semiconductor wafer
main surface
semiconductor device
water
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Pending
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JP2004156054A
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Japanese (ja)
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JP2005340431A (en
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Priority to JP2004156054A priority Critical patent/JP2005340431A/en
Priority claimed from JP2004156054A external-priority patent/JP2005340431A/en
Publication of JP2005340431A publication Critical patent/JP2005340431A/en
Publication of JP2005340431A5 publication Critical patent/JP2005340431A5/ja
Pending legal-status Critical Current

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Claims (10)

（ａ）主面およびその反対面の裏面を持つ半導体ウエハを用意する工程、
（ｂ）前記半導体ウエハの主面に半導体素子を有する半導体チップを形成し、前記半導体チップの周囲に設けられた切断領域にパターンを形成する工程、
（ｃ）テープと、前記テープの外周に貼り付けられた枠体とを有する治具を準備する工程、
（ｄ）前記治具のテープに前記半導体ウエハの主面を貼り付ける工程、
（ｅ）前記治具のテープに前記半導体ウエハの主面を貼り付けた状態で、前記半導体ウエハの裏面を研削する工程、
（ｆ）前記半導体ウエハの主面の切断領域における前記パターンを認識する工程、
（ｇ）第１の水と第２の水とをダイシング装置のダイシング刃に噴射しながら、前記半導体ウエハの切断領域に前記ダイシング刃を当てて前記半導体ウエハを切断し、前記半導体チップに分割する工程、
とを含むことを特徴とする半導体装置の製造方法。 (A) preparing a semiconductor wafer having a main surface and a back surface opposite to the main surface;
(B) step of the semiconductor chip is formed with a semi-conductor element to the main surface of the semiconductor wafer, to form a pattern on the cutting region provided around the semiconductor chip,
(C) preparing a jig having a tape and a frame attached to the outer periphery of the tape;
; (D) paste main surface of the semiconductor wafer to the jig tape process,
(E) the state of stuck main surface of the semiconductor wafer to a tape jig, cut the back surface of the semiconductor wafer Ken step,
(F) step of recognizing the pattern in the cutting region of the main surface of the semiconductor wafer,
(G) while spraying a dicing blade of the first water and a second water and a dicing apparatus, said cutting the semiconductor wafer by applying a dicing blade disconnected region of the semiconductor wafer, divided into the semiconductor chips The process of
A method for manufacturing a semiconductor device, comprising: 請求項１記載の半導体装置の製造方法において、前記(ｅ)工程の後に、前記半導体ウエハを研磨することを特徴とする半導体装置の製造方法。 2. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor wafer is polished after the step (e) . 請求項２記載の半導体装置の製造方法において、前記研磨する工程は、研磨パッドを用いて行うことを特徴とする半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 2 , wherein the polishing step is performed using a polishing pad . 請求項２記載の半導体装置の製造方法において、前記研磨する工程は、エッチング法により行うことを特徴とする半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 2 , wherein the polishing step is performed by an etching method. 請求項２記載の半導体装置の製造方法において、前記（ｄ）工程後の前記半導体ウエハの厚さが１００μｍまたは１００μｍより薄いことを特徴とする半導体装置の製造方法。 3. The method of manufacturing a semiconductor device according to claim 2 , wherein a thickness of the semiconductor wafer after the step (d) is 100 [mu] m or less than 100 [mu] m. 請求項１記載の半導体装置の製造方法において、前記治具の枠体は、前記テープの主面に形成された接着層を介して貼り付けられていることを特徴とする半導体装置の製造方法。 2. The method of manufacturing a semiconductor device according to claim 1, wherein the frame of the jig is attached via an adhesive layer formed on a main surface of the tape . 請求項６記載の半導体装置の製造方法において、前記半導体ウエハの主面は、前記テープの主面に形成された接着層を介して貼り付けられていることを特徴とする半導体装置の製造方法。 7. The method of manufacturing a semiconductor device according to claim 6, wherein the main surface of the semiconductor wafer is attached via an adhesive layer formed on the main surface of the tape . 請求項７記載の半導体装置の製造方法において、前記第２の水の圧力は、前記第１の水の圧力よりも高いことを特徴とする半導体装置の製造方法。 8. The method of manufacturing a semiconductor device according to claim 7, wherein the pressure of the second water is higher than the pressure of the first water . 請求項６記載の半導体装置の製造方法において、前記第１の水は純水を含み、前記第２の水は薬液を含んでいることを特徴とする半導体装置の製造方法。 7. The method of manufacturing a semiconductor device according to claim 6, wherein the first water includes pure water and the second water includes a chemical solution . 請求項６記載の半導体装置の製造方法において、前記第２の水の二酸化炭素濃度は、前記第１の水の二酸化炭素濃度よりも高いことを特徴とする半導体装置の製造方法。 7. The method of manufacturing a semiconductor device according to claim 6, wherein the carbon dioxide concentration of the second water is higher than the carbon dioxide concentration of the first water .
JP2004156054A 2004-05-26 2004-05-26 Method for manufacturing semiconductor device Pending JP2005340431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004156054A JP2005340431A (en) 2004-05-26 2004-05-26 Method for manufacturing semiconductor device

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Application Number Priority Date Filing Date Title
JP2004156054A JP2005340431A (en) 2004-05-26 2004-05-26 Method for manufacturing semiconductor device

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JP2005340431A JP2005340431A (en) 2005-12-08
JP2005340431A5 true JP2005340431A5 (en) 2007-07-05

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CN102148179B (en) 2006-06-23 2012-05-30 日立化成工业株式会社 Using method of bonding film
JP2009260219A (en) * 2008-03-24 2009-11-05 Hitachi Chem Co Ltd Method of dicing semiconductor wafer, and method of manufacturing semiconductor device
JP6004728B2 (en) * 2012-04-25 2016-10-12 株式会社ディスコ Blade cover device and cutting device provided with blade cover device
JP5989422B2 (en) * 2012-06-28 2016-09-07 新電元工業株式会社 Manufacturing method of semiconductor device
JP2014013812A (en) * 2012-07-04 2014-01-23 Disco Abrasive Syst Ltd SiC SUBSTRATE PROCESSING METHOD
JP2015100862A (en) * 2013-11-22 2015-06-04 株式会社ディスコ Cutting method
JP2016157718A (en) * 2015-02-23 2016-09-01 株式会社ディスコ Transfer method of wafer and transfer mechanism of wafer
JP6578985B2 (en) * 2016-02-18 2019-09-25 三菱電機株式会社 Substrate, substrate cutting method
JP2018073875A (en) * 2016-10-25 2018-05-10 株式会社ディスコ Processing method of wafer
JP7154690B2 (en) * 2018-06-22 2022-10-18 株式会社ディスコ Grinding wheel dressing method
CN115621302B (en) * 2022-10-31 2023-08-11 上海功成半导体科技有限公司 Semiconductor device and method for manufacturing the same

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JPS6431604A (en) * 1987-07-29 1989-02-01 Sony Corp Method and device for dicing
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JPH0613460A (en) * 1992-06-25 1994-01-21 Fujitsu Ltd Dicing method and dicing apparatus
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