JPH03149183A - Method for cutting semiconductor substrate - Google Patents

Abstract

PURPOSE:To prevent cut chips remaining in cut grooves from flying and sticking to the surface of a chip at the time of hip-up of the chip by ejecting high pressure water to the cut grooves for cleaning, independent of cooling, cutting water for a high speed rotary grindstone. CONSTITUTION:When a substrate 2 fixed on a chuck table 1 is cut by a rotary grinstone 4, cutting water for removing cut chips from a cover portion 3 is ejected from an ejecting port 5 in the forwarding direction of the rotary grindstone 4, an ejecting port 6 in the vertical direction and an ejecting port 7 in the direction of the substrate. In addition thereto, high pressure water is ejected to cut grooves after cutting from an ejecting port 8 for cleaning the cut grooves. The flow quantity and the pressure of the water ejected from the cut groove cleaning ejecting port 8 is determined by taking account of the dimensions of the rotary grindstone 4 and its rotational number cutting speed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cutting a semiconductor substrate, and more particularly to a method for cutting a semiconductor substrate using a high-speed rotating grindstone.

[Conventional technology]

Conventionally, in the cutting method used for this type of semiconductor substrate (hereinafter referred to as a substrate), a cutting method using a high-speed rotating grindstone has generally been implemented.

In the cutting method using a high-speed rotating grindstone, Fig. 3(a),
As shown in (b), in order to remove cutting debris generated during cutting from the substrate 2 fixed to the chuck table,
A forward direction injection port 5 and a vertical injection port 6 of the rotary grindstone 4 are provided by the force bar portion 3 of the rotary grindstone 4 to inject water, and a substrate direction injection lower is provided to inject water to the substrate 2. It was getting worse.

[Problem to be solved by the invention]

In the conventional cutting method described above, water is sprayed onto the rotary grindstone and the substrate to remove cutting debris, but no treatment is taken for the kerf after cutting.
Since the removal of cutting debris from the kerf is insufficient, the cutting debris remaining in the kerf flies up during subsequent chip pickup and adheres to the chip surface, causing stains and scratches.

An object of the present invention is to provide a highly reliable method for cutting a semiconductor substrate in which cutting debris remaining in the kerf does not adhere to the chip surface and cause stains, scratches, etc.

[Means to solve the problem]

The present invention is a method for cutting a semiconductor substrate using a high-speed rotating grindstone, in which, in addition to cooling the high-speed rotating grindstone and cutting water, high-pressure water is sprayed onto the kerf to clean the kerf.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1(a) and 1(b) are a side view and a front view illustrating a cutting method according to a first embodiment of the present invention.

As shown in FIGS. 1(a) and 1(b), when the substrate 2 fixed to the chuck table is cut with the rotary grindstone 4,
Conventional force bar section 3 injects the rotary grindstone 4 in the advancing direction
Further, in addition to the cutting water for removing cutting waste that is injected from the substrate direction injection lower, high-pressure water is injected from the kerf cleaning injection port 8 to the kerf after cutting.

The flow rate and pressure of the water injected from the kerf cleaning jet port 8 are determined in consideration of the size of the rotary grindstone 4, its rotational speed, and cutting speed.

Further, regarding the spray angle of the high-pressure water, it is preferable to spray the high-pressure water at an angle in a direction opposite to the traveling direction of the rotary grindstone 4 so as not to be blocked by the flow of cutting water during conventional cutting.

FIGS. 2(a) and 2(b) are a side view and a front view illustrating a cutting method according to a second embodiment of the present invention.

The second embodiment differs from the first embodiment described above in that it also has a kerf cleaning jet port 8a in the direction of movement of the rotary grindstone 4.
Spray water with a The mechanism other than this is the same as the first embodiment.

In this embodiment, since the injection ports 8.8a are provided before and after the rotary grindstone 4, the cutting method that was limited to one-way cutting in the first embodiment can now be used for reciprocating cutting suitable for mass production.
Furthermore, since the cutting line is cleaned before cutting, it is possible to remove dust and the like that have adhered to the substrate 2 itself and have an adverse effect on cutting, and there is an advantage that stable cutting is possible.

〔Effect of the invention〕

As explained above, the present invention cleans the cut grooves of the substrate, thereby causing the cutting debris remaining in the grooves to fly up during the subsequent chip hip-up and adhere to the chip surface, resulting in dirt, scratches, etc. The present invention has the effect of providing a semiconductor substrate cutting method that can prevent the problem of inducing the occurrence of oxidation and make it possible to produce products with high quality and high reliability.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1(a) and (b) are side and front views illustrating the cutting method of the first embodiment of the present invention, and FIGS. 2(a) and (b)
FIG. 3A is a side view and a front view illustrating a cutting method according to a second embodiment of the present invention.

(b) is a side view and a front view illustrating an example of a conventional semiconductor substrate cutting method.

DESCRIPTION OF SYMBOLS 1... Chuck table, 2... Substrate, 3... Cover part, 4... Rotary grindstone, 5... Advance direction injection port,
6...-vertical injection port, 7...substrate direction injection port, 8
, 8a... One cut groove cleaning jet port.

Claims (1)

[Claims] In a method of cutting semiconductor substrates using a high-speed rotating grindstone,
A method for cutting a semiconductor substrate, characterized in that, in addition to cooling the high-speed rotating grindstone and cutting water, high-pressure water is sprayed onto the kerf to clean the kerf.