JPS5458290A - Diecing method - Google Patents
Diecing methodInfo
- Publication number
- JPS5458290A JPS5458290A JP12421177A JP12421177A JPS5458290A JP S5458290 A JPS5458290 A JP S5458290A JP 12421177 A JP12421177 A JP 12421177A JP 12421177 A JP12421177 A JP 12421177A JP S5458290 A JPS5458290 A JP S5458290A
- Authority
- JP
- Japan
- Prior art keywords
- diecing
- grinding stone
- diamond
- dissoluble
- coolant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
Abstract
PURPOSE:In the diecing method of semi conductor wafer by diecing grinding stone which is the metal bond diamond grinding one, electrolyte is applied as a coolant with direct curent and surface arrangement of the grinding stone is always executed during the diecing process for maintaining the excellent cutting capacity. CONSTITUTION:A semi conductor wafer 5 is placed on a moveble table 4 and a rotating diecing grinding stone 3 is pressed to the material 5 and a coolant 7 consisting of the electrolyte is dispersed to this pressed part through a nozzle 6. Then, in the above electroyte, the current is present by putting the negative direct current to the nozzle 6 and by putting the positive direct current to a spindle 2. Diamond part of a grinding stone 1 does not be dissoluble, but the binder is always dissoluble, so sharp end of diamond part is projected saliently for performing the excellent cutting.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12421177A JPS5458290A (en) | 1977-10-17 | 1977-10-17 | Diecing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12421177A JPS5458290A (en) | 1977-10-17 | 1977-10-17 | Diecing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5458290A true JPS5458290A (en) | 1979-05-10 |
Family
ID=14879735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12421177A Pending JPS5458290A (en) | 1977-10-17 | 1977-10-17 | Diecing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5458290A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01228774A (en) * | 1988-03-09 | 1989-09-12 | Shin Etsu Handotai Co Ltd | Prevention method for loading of inner perimeter type cutting edge grindstone portion |
JP2005340431A (en) * | 2004-05-26 | 2005-12-08 | Renesas Technology Corp | Method for manufacturing semiconductor device |
-
1977
- 1977-10-17 JP JP12421177A patent/JPS5458290A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01228774A (en) * | 1988-03-09 | 1989-09-12 | Shin Etsu Handotai Co Ltd | Prevention method for loading of inner perimeter type cutting edge grindstone portion |
JP2005340431A (en) * | 2004-05-26 | 2005-12-08 | Renesas Technology Corp | Method for manufacturing semiconductor device |
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