JPS5458290A - Diecing method - Google Patents

Diecing method

Info

Publication number
JPS5458290A
JPS5458290A JP12421177A JP12421177A JPS5458290A JP S5458290 A JPS5458290 A JP S5458290A JP 12421177 A JP12421177 A JP 12421177A JP 12421177 A JP12421177 A JP 12421177A JP S5458290 A JPS5458290 A JP S5458290A
Authority
JP
Japan
Prior art keywords
diecing
grinding stone
diamond
dissoluble
coolant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12421177A
Other languages
Japanese (ja)
Inventor
Susumu Komine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12421177A priority Critical patent/JPS5458290A/en
Publication of JPS5458290A publication Critical patent/JPS5458290A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

PURPOSE:In the diecing method of semi conductor wafer by diecing grinding stone which is the metal bond diamond grinding one, electrolyte is applied as a coolant with direct curent and surface arrangement of the grinding stone is always executed during the diecing process for maintaining the excellent cutting capacity. CONSTITUTION:A semi conductor wafer 5 is placed on a moveble table 4 and a rotating diecing grinding stone 3 is pressed to the material 5 and a coolant 7 consisting of the electrolyte is dispersed to this pressed part through a nozzle 6. Then, in the above electroyte, the current is present by putting the negative direct current to the nozzle 6 and by putting the positive direct current to a spindle 2. Diamond part of a grinding stone 1 does not be dissoluble, but the binder is always dissoluble, so sharp end of diamond part is projected saliently for performing the excellent cutting.
JP12421177A 1977-10-17 1977-10-17 Diecing method Pending JPS5458290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12421177A JPS5458290A (en) 1977-10-17 1977-10-17 Diecing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12421177A JPS5458290A (en) 1977-10-17 1977-10-17 Diecing method

Publications (1)

Publication Number Publication Date
JPS5458290A true JPS5458290A (en) 1979-05-10

Family

ID=14879735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12421177A Pending JPS5458290A (en) 1977-10-17 1977-10-17 Diecing method

Country Status (1)

Country Link
JP (1) JPS5458290A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228774A (en) * 1988-03-09 1989-09-12 Shin Etsu Handotai Co Ltd Prevention method for loading of inner perimeter type cutting edge grindstone portion
JP2005340431A (en) * 2004-05-26 2005-12-08 Renesas Technology Corp Method for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228774A (en) * 1988-03-09 1989-09-12 Shin Etsu Handotai Co Ltd Prevention method for loading of inner perimeter type cutting edge grindstone portion
JP2005340431A (en) * 2004-05-26 2005-12-08 Renesas Technology Corp Method for manufacturing semiconductor device

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