WO2015050218A1 - Method for producing polished article - Google Patents

Method for producing polished article Download PDF

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Publication number
WO2015050218A1
WO2015050218A1 PCT/JP2014/076433 JP2014076433W WO2015050218A1 WO 2015050218 A1 WO2015050218 A1 WO 2015050218A1 JP 2014076433 W JP2014076433 W JP 2014076433W WO 2015050218 A1 WO2015050218 A1 WO 2015050218A1
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WO
WIPO (PCT)
Prior art keywords
grinding
polished
polishing
abrasive
rotated
Prior art date
Application number
PCT/JP2014/076433
Other languages
French (fr)
Japanese (ja)
Inventor
和正 北村
智毅 長江
Original Assignee
日本碍子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to CN201480003235.4A priority Critical patent/CN104822491A/en
Priority to JP2015540554A priority patent/JPWO2015050218A1/en
Priority to KR1020157014045A priority patent/KR20150073214A/en
Publication of WO2015050218A1 publication Critical patent/WO2015050218A1/en
Priority to US14/722,222 priority patent/US20150266155A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping

Definitions

  • the present invention relates to a method for producing an abrasive.
  • a base metal is provided, and the balance wall is the outer peripheral portion of the base metal and protrudes in the opposite direction from the surface opposite to the surface from which the annular outer peripheral wall protrudes.
  • a method in which the front and back surfaces of a semiconductor substrate are ground with a grindstone for surface grinding so that the semiconductor substrate has a desired thickness for example, see Patent Document 1). According to this, even if driven at high speed, the deformation of the base metal is suppressed, and it is possible to provide a grinding wheel for surface grinding that maintains grinding quality and grinding accuracy.
  • a grinding process is performed at a high rotation speed of 1500 rpm to 10000 rpm for as short a time as possible, and a process for further increasing the smoothness is performed by the subsequent polishing process.
  • strain, an altered layer, microcracks, and the like are generated on the surface, and the obtained substrate has a rough surface. This can be dealt with by removing strains, altered layers, microcracks, and the like in a subsequent polishing step.
  • the polishing process is very time consuming, and there is a problem that the processing time until the grinding and polishing process is completed is long.
  • This invention is made in view of such a subject, and it aims at providing the manufacturing method of the abrasive
  • the present inventors can improve the processing quality of the grinding process by considering the processing time in total and reviewing the processing of the grinding process, As a result, it has been found that the processing time of the grinding and polishing steps can be further shortened, and the present invention has been completed.
  • the method for producing a polished article according to the present invention is a method for producing a polished article by treating the polished article, and a grinding step of grinding the surface of the polished article with a grindstone rotated at a peripheral speed of 10 m / s or less. , Including.
  • the method for producing a polished article of the present invention can further improve the processing quality of the grinding process, and can further reduce the processing time of the grinding and polishing processes. This is because the generation of strain, deteriorated layers, microcracks, and the like caused by processing can be further suppressed by performing a lower-speed grinding process that has not been conventionally performed in the grinding process. As a result, although the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
  • the flowchart which shows an example of a board
  • the block diagram which shows the outline of an example of a structure of the grinding apparatus 10 of this embodiment.
  • 1 is a configuration diagram illustrating an outline of an example of a configuration of a CMP apparatus 30 according to an embodiment. The surface image after grinding of Example 1 and Comparative Example 1.
  • FIG. 1 is a flowchart showing an example of a substrate processing process according to an embodiment of the present invention.
  • FIG. 2 is a configuration diagram showing an outline of an example of the configuration of the grinding apparatus 10 of the present embodiment.
  • FIG. 3 is a configuration diagram showing an outline of an example of the configuration of the lapping apparatus 20 of the present embodiment.
  • FIG. 4 is a configuration diagram illustrating an outline of an example of a configuration of a CMP (chemical mechanical polishing) apparatus 30 according to the present embodiment.
  • CMP chemical mechanical polishing
  • a cutting process for cutting a cylindrical ingot to obtain a disk-shaped object to be polished (step S100), a grinding process for grinding the object to be polished obtained by cutting, (Step S110), a lapping process (Step S120) for polishing the ground object to be polished, a CMP process for polishing by further adding chemical treatment (Step S130), and a cleaning process for performing surface cleaning (Step S140)
  • a grinding process, a lapping process, and a CMP process will be mainly described. Note that the lapping step, the CMP step, and the like may be omitted as appropriate, and other steps such as a polishing step may be added as appropriate.
  • the object to be polished 18 includes, for example, various semiconductor wafers, single crystal wafers, etc., such as silicon, silicon oxide, alumina, sapphire, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, indium phosphide, lithium niobate. And compound semiconductors such as lithium tantalate.
  • various semiconductor wafers such as silicon, silicon oxide, alumina, sapphire, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, indium phosphide, lithium niobate.
  • compound semiconductors such as lithium tantalate.
  • the grinding apparatus 10 includes a controller 11 that controls the entire apparatus, a grinding motor 14, a base 15 that is rotated by the grinding motor 14, and a grinding wheel 16 that is fixed to the base 15.
  • the grinding mechanism 12 of the grinding apparatus 10 performs an in-feed process in which the grinding wheel 16 is rotated about the axis, and the workpiece 18 fixed to a fixed plate (not shown) is rotated about the axis, and the workpiece 18 is ground by the grinding wheel 16. It is configured as a mechanism to execute.
  • the grinding apparatus 10 includes a grinding motor 14 that can output a sufficient torque when the grinding wheel 16 rotates in a low speed rotation range, for example, a rotation range of 10 rpm or more and less than 2000 rpm.
  • the controller 11 drives and controls the grinding motor 14 so as to rotate at a predetermined rotational speed.
  • the surface 19 of the workpiece 18 is ground by the grinding wheel 16 rotated at a peripheral speed of 10 m / s or less. In this way, the processing quality of the grinding process can be further improved, and as a result, the processing time of the grinding and polishing processes can be further shortened.
  • this grinding step it is preferable to grind the surface 19 of the workpiece 18 with the grinding wheel 16 rotated at a peripheral speed of 0.5 m / s or more. By doing so, it is possible to further suppress the lengthening of the time in the grinding process and to further shorten the processing time of the grinding and polishing processes.
  • the rotational speed of the grinding wheel 16 is preferably 1000 rpm or less, and preferably 800 rpm or less.
  • the cutting amount in the grinding step can be appropriately set according to the peripheral speed of the grinding wheel 16, and is preferably in the range of 0.1 to 50 ⁇ m / min, more preferably in the range of 0.5 to 40 ⁇ m / min, A range of 1 to 30 ⁇ m / min is more preferable.
  • the abrasive cutting depth is generally made smaller than the critical cutting depth Dc value.
  • This critical cutting depth Dc value refers to the amount of cutting at the point where the deformation process transitions from brittle to ductile when performing ductile mode processing of a hard and brittle material.
  • the abrasive grain cutting depth is inversely proportional to the circumferential speed (ie, rotational speed) of the grindstone, and it is necessary to increase the circumferential speed of the grindstone in order to reduce the abrasive grain cutting depth.
  • the peripheral speed of the grindstone is increased, the load on the abrasive grains decreases, and the abrasive grains tend to wear out.
  • abrasive wear of abrasive grains is small and does not pose a problem.
  • abrasive wear of abrasive grains becomes severe, and the processing quality may deteriorate.
  • the abrasive wear of the abrasive grains is further suppressed by further reducing the peripheral speed of the grindstone.
  • a solidified abrasive such as an oxide, carbide, nitride and diamond can be used.
  • the grinding wheel 16 is a vitrified bond that is fired at high temperature using clay such as feldspar as a binder, a metal bond that is fixed with metal, a resin bond that is fired at low temperature using a synthetic resin such as phenol or formalin. Is mentioned.
  • the grinding wheel 16 is rotated at a low peripheral speed that has not been conventionally used, so that the hardness, the porosity, and the like of the grinding machine 10 are appropriately adjusted.
  • the grinding wheel 16 may be an electrodeposited abrasive that fixes the abrasive with a plating layer.
  • the lapping apparatus includes an upper surface plate 22, a lower surface plate 23 that is disposed so as to face the upper surface plate 22, and a disk-shaped carrier 24 that is sandwiched therebetween.
  • An object to be polished 18 is disposed on the lower surface of the carrier 24, the object to be polished 18 is sandwiched between the upper surface plate 22 and the lower surface plate 23, and polished with abrasive grains to improve flatness.
  • the CMP apparatus 30 includes a surface plate 32, a polishing head 33, and a slurry supply device 34.
  • a polishing pad 40 is attached to the surface plate 32.
  • the slurry is supplied from the slurry supply device 34 onto the polishing pad 40, the surface plate 32 rotates, and the polishing head 33 presses the object 18 disposed on the polishing pad 40 against the polishing pad 40. While rotating in the same direction as the surface plate 32, the surface 19 of the workpiece 18 is chemically and mechanically polished.
  • the slurry is supplied onto the surface of the polishing pad 40 from the slurry supply device 34 of the CMP apparatus 30.
  • the slurry includes an abrasive, an acid, an oxidant, a surfactant, and water. Colloidal silica, fumed silica, alumina, titania, zirconia, diamond, and a mixture thereof can be used as the abrasive. Further, as the oxidizing agent, a peroxide, nitrate, or the like can be used. Further, the slurry may contain a pH adjusting agent. As the pH adjuster, an acidic substance or a basic substance is appropriately used in order to adjust the pH of the slurry to a desired value.
  • the processing quality of the grinding process can be further improved, and the processing time of the grinding and polishing processes can be further shortened.
  • the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
  • the grinding apparatus provided with the grinding motor 14 that rotates at a low speed is not desired and does not exist as an apparatus, so the above-described grinding apparatus was produced.
  • a grinding apparatus was produced using this.
  • Example 1 A single crystal wafer of high-purity alumina was prepared, and the grinding process shown in FIG. 2 was performed.
  • an alumina wafer which is an object to be polished, was ground by using a grinding wheel having a diameter of 150 cm and rotating at a peripheral speed of 10 m / s (rotation speed: 1000 rpm). At this time, the cutting amount was 30 ⁇ m / min.
  • the vitrified bond grindstone which has glass as a main component was used for the grinding grindstone.
  • a lapping process was performed on the ground wafer.
  • the lapping apparatus 20 shown in FIG. 3 was used, and the rotation speed of the upper surface plate was 60 rpm, the rotation speed of the lower surface plate was 60 rpm, and the abrasive grains were treated for 3 hours with diamond.
  • Comparative Example 1 A comparative example in which the grinding wheel was rotated at a peripheral speed of 15 m / s (rotation number: 1500 rpm), the cutting amount was set to 60 ⁇ m / min, and the lapping time was set to 9 hours, and the same processing as in Example 1 was performed. It was set to 1.
  • Example 2 to 3 Except that the object to be polished was a sapphire wafer or a GaN wafer, the same processing as in Example 1 was performed as Examples 2 to 3, respectively.
  • Comparative Examples 2 to 3 were the same as those of Comparative Example 1 except that the objects to be polished were sapphire wafers and GaN wafers.
  • FIG. 5 is a surface image after grinding in Example 1 and Comparative Example 1.
  • the surface roughness Ra after grinding was 0.5 ⁇ m in Comparative Example 1, whereas it was 0.01 ⁇ m in Example 1, and the surface roughness was improved.
  • production of the distortion which arises by a process, an altered layer, a microcrack, etc. is suppressed.
  • the total time until the end of the grinding and lapping process is 9.5 hours in Comparative Example 1, whereas it is 4.0 hours in Example 1, and the entire processing time is short in Example 1.
  • the surface roughness Ra is 0.01 ⁇ m and 0.01 ⁇ m, respectively, and the surface roughness Ra is 0.1 ⁇ m and 0.2 ⁇ m of Comparative Examples 2 to 3, respectively. It was improving.
  • the processing time for the grinding process and the lapping process is 4 hours and 7 hours, respectively. Compared to 8 hours and 15 hours for Comparative Examples 2 to 3, respectively, Processing time has been shortened. In this way, by performing a slower grinding process, which has not been performed in the past in the grinding process, it is possible to further suppress the generation of strain, altered layers, microcracks, and the like caused by processing.
  • the processing time in the process becomes longer, it has been found that the time required for the lapping process after the grinding process can be greatly reduced, and the processing time in the grinding and polishing process can be further reduced.
  • the method for polishing an object to be polished according to the present invention can be used for polishing the surface of an object to be polished such as a semiconductor wafer.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A grinding device (10) is provided with: a controller (11) that controls the entire device; a grinding motor (14); a base (15) that is rotated by the grinding motor (14); and a grinding stone (16) affixed to the base (15). In a grinding step, the grinding device (10) is used to grind the surface (19) of an article (18) to be polished by means of the grinding stone (16) rotated at a circumferential speed of no greater than 10 m/s. In the grinding step, the surface (19) of the article (18) to be polished is preferably ground by means of the grinding stone (16) rotated at a circumferential speed of at least 0.5 m/s. In the grinding step, the surfaces of alumina, sapphire, silicon carbide, and gallium nitride are ground as the articles to be polished. Also, a lapping step for polishing the post-grinding article to be polished by means of abrasive grit is preferably included.

Description

研磨物の製造方法Manufacturing method of polished object
　本発明は、研磨物の製造方法に関する。 The present invention relates to a method for producing an abrasive.
　従来、基板の研削方法としては、台金を備え、平衡壁が台金の外周部であって環状外周壁が突き出された面とは反対側の面からその環状外周壁とは反対向きに突設されている平面研削加工用砥石により、半導体基板の表裏面を研削し、半導体基板を所望の厚さにするものが提案されている（例えば、特許文献１参照）。これによると、高速回転駆動されたとしても台金の変形が抑制され、研削品質や研削精度が維持される平面研削加工用砥石を提供することができるとしている。 Conventionally, as a substrate grinding method, a base metal is provided, and the balance wall is the outer peripheral portion of the base metal and protrudes in the opposite direction from the surface opposite to the surface from which the annular outer peripheral wall protrudes. There has been proposed a method in which the front and back surfaces of a semiconductor substrate are ground with a grindstone for surface grinding so that the semiconductor substrate has a desired thickness (for example, see Patent Document 1). According to this, even if driven at high speed, the deformation of the base metal is suppressed, and it is possible to provide a grinding wheel for surface grinding that maintains grinding quality and grinding accuracy.
特開２００５－２７１１６０号公報JP 2005-271160 A
　ところで、この特許文献１に記載された研削方法などでは、１５００ｒｐｍ～１００００ｒｐｍなどの高回転で、できるだけ短時間の研削処理を行い、その後の研磨工程によって、より平滑度を高める処理を行う。このような研削工程では、表面にひずみ、変質層、マイクロクラックなどが生じ、得られた基板は、表面粗さが粗いものであった。これに対しては、その後の研磨工程によって、ひずみ、変質層、マイクロクラックなどを取り除くことで対処できる。しかしながら、研磨工程は、非常に時間がかかり、研削及び研磨工程を終了するまでの処理時間が長いという問題があった。 By the way, in the grinding method described in Patent Document 1, a grinding process is performed at a high rotation speed of 1500 rpm to 10000 rpm for as short a time as possible, and a process for further increasing the smoothness is performed by the subsequent polishing process. In such a grinding process, strain, an altered layer, microcracks, and the like are generated on the surface, and the obtained substrate has a rough surface. This can be dealt with by removing strains, altered layers, microcracks, and the like in a subsequent polishing step. However, the polishing process is very time consuming, and there is a problem that the processing time until the grinding and polishing process is completed is long.
　本発明は、このような課題に鑑みなされたものであり、研削工程の加工品質をより向上させることができる研磨物の製造方法を提供することを目的とする。また、処理時間をより短縮することができる研磨物の製造方法を提供することを目的とする。 This invention is made in view of such a subject, and it aims at providing the manufacturing method of the abrasive | polishing thing which can improve the processing quality of a grinding process more. Moreover, it aims at providing the manufacturing method of the abrasive | polishing material which can shorten processing time more.
　上述した主目的を達成するために鋭意研究したところ、本発明者らは、処理時間をトータルで考慮し、研削工程の処理を見直すことにより、研削工程の加工品質をより向上させることができ、ひいては研削及び研磨工程の処理時間をより短縮することができることを見いだし、本発明を完成するに至った。 As a result of earnest research to achieve the main purpose described above, the present inventors can improve the processing quality of the grinding process by considering the processing time in total and reviewing the processing of the grinding process, As a result, it has been found that the processing time of the grinding and polishing steps can be further shortened, and the present invention has been completed.
　即ち、本発明の研磨物の製造方法は、被研磨物を処理し研磨物を製造する方法であって、周速１０ｍ／ｓ以下で回転した砥石により前記被研磨物の表面を研削する研削工程、を含むものである。 That is, the method for producing a polished article according to the present invention is a method for producing a polished article by treating the polished article, and a grinding step of grinding the surface of the polished article with a grindstone rotated at a peripheral speed of 10 m / s or less. , Including.
　本発明の研磨物の製造方法は、研削工程の加工品質をより向上させることができ、ひいては研削及び研磨工程の処理時間をより短縮することができる。この理由は、研削工程において、従来行うことがなかった、より低速な研削処理を行うことにより、加工によって生じるひずみ、変質層、マイクロクラックなどの生成をより抑制することができるためである。その結果、研削工程での処理時間は長くなるものの、研削工程後の研磨工程に要する時間を大きく短縮することができ、研削及び研磨工程での処理時間を短縮することができる。 The method for producing a polished article of the present invention can further improve the processing quality of the grinding process, and can further reduce the processing time of the grinding and polishing processes. This is because the generation of strain, deteriorated layers, microcracks, and the like caused by processing can be further suppressed by performing a lower-speed grinding process that has not been conventionally performed in the grinding process. As a result, although the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
基板加工処理の一例を示すフローチャート。The flowchart which shows an example of a board | substrate process. 本実施形態の研削装置１０の構成の一例の概略を示す構成図。The block diagram which shows the outline of an example of a structure of the grinding apparatus 10 of this embodiment. 本実施形態のラップ加工装置２０の構成の一例の概略を示す構成図。The block diagram which shows the outline of an example of a structure of the lapping apparatus 20 of this embodiment. 本実施形態のＣＭＰ装置３０の構成の一例の概略を示す構成図。1 is a configuration diagram illustrating an outline of an example of a configuration of a CMP apparatus 30 according to an embodiment. 実施例１及び比較例１の研削後の表面画像。The surface image after grinding of Example 1 and Comparative Example 1.
　次に、本発明を実施するための形態を図面を用いて説明する。図１は、本発明の一実施形態である基板加工処理の一例を示すフローチャートである。図２は、本実施形態の研削装置１０の構成の一例の概略を示す構成図である。図３は、本実施形態のラップ加工装置２０の構成の一例の概略を示す構成図である。図４は、本実施形態のＣＭＰ（ｃｈｅｍｉｃａｌ　ｍｅｃｈａｎｉｃａｌ　ｐｏｌｉｓｈｉｎｇ）装置３０の構成の一例の概略を示す構成図である。 Next, an embodiment for carrying out the present invention will be described with reference to the drawings. FIG. 1 is a flowchart showing an example of a substrate processing process according to an embodiment of the present invention. FIG. 2 is a configuration diagram showing an outline of an example of the configuration of the grinding apparatus 10 of the present embodiment. FIG. 3 is a configuration diagram showing an outline of an example of the configuration of the lapping apparatus 20 of the present embodiment. FIG. 4 is a configuration diagram illustrating an outline of an example of a configuration of a CMP (chemical mechanical polishing) apparatus 30 according to the present embodiment.
　本実施形態の研磨物の製造方法では、円柱形のインゴットを切断して円盤状の被研磨物を得る切断工程と（ステップＳ１００）、切断して得られた被研磨物を研削する研削工程と（ステップＳ１１０）、研削した被研磨物を研磨するラップ工程（ステップＳ１２０）と、更に化学的な処理も加えて研磨するＣＭＰ工程と（ステップＳ１３０）、表面洗浄を行う洗浄工程と（ステップＳ１４０）を含み、研磨処理を施した研磨物を得る。ここでは、研削工程、ラップ工程、ＣＭＰ工程について主として説明する。なお、ラップ工程や、ＣＭＰ工程などは適宜省略してもよいし、これら以外の工程、例えばポリッシュ工程などを適宜加えるものとしてもよい。 In the method for manufacturing an abrasive according to the present embodiment, a cutting process for cutting a cylindrical ingot to obtain a disk-shaped object to be polished (step S100), a grinding process for grinding the object to be polished obtained by cutting, (Step S110), a lapping process (Step S120) for polishing the ground object to be polished, a CMP process for polishing by further adding chemical treatment (Step S130), and a cleaning process for performing surface cleaning (Step S140) A polished product that has been subjected to a polishing treatment is obtained. Here, a grinding process, a lapping process, and a CMP process will be mainly described. Note that the lapping step, the CMP step, and the like may be omitted as appropriate, and other steps such as a polishing step may be added as appropriate.
　被研磨物１８は、例えば、各種半導体ウェハや、単結晶ウェハなどを含み、シリコン、酸化珪素、アルミナ、サファイア、炭化ケイ素や、窒化ガリウム、リン酸ガリウム、ヒ素ガリウム、リン化インジウム、ニオブ酸リチウム、タンタル酸リチウムなどの化合物半導体を含む。 The object to be polished 18 includes, for example, various semiconductor wafers, single crystal wafers, etc., such as silicon, silicon oxide, alumina, sapphire, silicon carbide, gallium nitride, gallium phosphate, gallium arsenide, indium phosphide, lithium niobate. And compound semiconductors such as lithium tantalate.
（研削工程）
　研削工程では、図２に示す研削装置１０を用いて被研磨物１８（基板）を研削する。研削装置１０は、装置全体を制御するコントローラ１１と、研削モータ１４と、研削モータ１４により回転される台金１５と、台金１５に固定された研削砥石１６と、を備えている。この研削装置１０の研削機構１２は、研削砥石１６を軸回転すると共に、図示しない固定板に固定した被研磨物１８を軸回転させ、研削砥石１６により被研磨物１８を研削するインフィード加工を実行する機構として構成されている。この研削装置１０では、低速回転域、例えば研削砥石１６が１０ｒｐｍ以上２０００ｒｐｍ未満の回転域で回転する際に十分なトルクを出力することができる研削モータ１４を備えている。コントローラ１１は、所定の回転数で回転するよう研削モータ１４を駆動制御する。 (Grinding process)
In the grinding process, the workpiece 18 (substrate) is ground using the grinding apparatus 10 shown in FIG. The grinding apparatus 10 includes a controller 11 that controls the entire apparatus, a grinding motor 14, a base 15 that is rotated by the grinding motor 14, and a grinding wheel 16 that is fixed to the base 15. The grinding mechanism 12 of the grinding apparatus 10 performs an in-feed process in which the grinding wheel 16 is rotated about the axis, and the workpiece 18 fixed to a fixed plate (not shown) is rotated about the axis, and the workpiece 18 is ground by the grinding wheel 16. It is configured as a mechanism to execute. The grinding apparatus 10 includes a grinding motor 14 that can output a sufficient torque when the grinding wheel 16 rotates in a low speed rotation range, for example, a rotation range of 10 rpm or more and less than 2000 rpm. The controller 11 drives and controls the grinding motor 14 so as to rotate at a predetermined rotational speed.
　研削工程では、周速１０ｍ／ｓ以下で回転した研削砥石１６により被研磨物１８の表面１９を研削する。こうすれば、研削工程の加工品質をより向上させることができ、ひいては研削及び研磨工程の処理時間をより短縮することができる。この研削工程では、周速０．５ｍ／ｓ以上で回転した研削砥石１６により被研磨物１８の表面１９を研削することが好ましい。こうすれば、研削工程での時間の長期化をより抑制し、研削及び研磨工程の処理時間をより短縮することができ、好ましい。この研削工程において、研削砥石１６の回転数は、例えば、１０００ｒｐｍ以下とすることが好ましく、８００ｒｐｍ以下とすることが好ましい。研削工程における切り込み量は、研削砥石１６の周速に応じて適宜設定することができ、例えば、０．１～５０μｍ／ｍｉｎの範囲が好ましく、０．５～４０μｍ／ｍｉｎの範囲がより好ましく、１～３０μｍ／ｍｉｎの範囲が更に好ましい。 In the grinding process, the surface 19 of the workpiece 18 is ground by the grinding wheel 16 rotated at a peripheral speed of 10 m / s or less. In this way, the processing quality of the grinding process can be further improved, and as a result, the processing time of the grinding and polishing processes can be further shortened. In this grinding step, it is preferable to grind the surface 19 of the workpiece 18 with the grinding wheel 16 rotated at a peripheral speed of 0.5 m / s or more. By doing so, it is possible to further suppress the lengthening of the time in the grinding process and to further shorten the processing time of the grinding and polishing processes. In this grinding step, the rotational speed of the grinding wheel 16 is preferably 1000 rpm or less, and preferably 800 rpm or less. The cutting amount in the grinding step can be appropriately set according to the peripheral speed of the grinding wheel 16, and is preferably in the range of 0.1 to 50 μm / min, more preferably in the range of 0.5 to 40 μm / min, A range of 1 to 30 μm / min is more preferable.
　ここで、研削工程について説明する。研削工程では、一般的に、臨界切込み深さＤｃ値よりも砥粒切り込み深さを小さくして行われる。この臨界切込み深さＤｃ値は、硬脆材料の延性モード加工を行なう場合における、変形過程が脆性から延性に遷移する点の切込み量をいう。砥粒切り込み深さは、砥石の周速（即ち回転数）と反比例関係にあり、砥粒切り込み深さを小さくするためには砥石の周速を上げる必要がある。しかし、砥石の周速を上げると砥粒への負荷は減少し、砥粒は摩滅摩耗しやすくなる。一般的な材料では、砥粒の摩滅摩耗は少なく問題とならないが、特に高硬度材では砥粒の摩滅摩耗が激しくなり、加工品質が低下することがある。本発明では、砥石の周速をより低減することにより、砥粒の摩滅摩耗をより抑制するのである。 Here, the grinding process will be described. In the grinding process, the abrasive cutting depth is generally made smaller than the critical cutting depth Dc value. This critical cutting depth Dc value refers to the amount of cutting at the point where the deformation process transitions from brittle to ductile when performing ductile mode processing of a hard and brittle material. The abrasive grain cutting depth is inversely proportional to the circumferential speed (ie, rotational speed) of the grindstone, and it is necessary to increase the circumferential speed of the grindstone in order to reduce the abrasive grain cutting depth. However, when the peripheral speed of the grindstone is increased, the load on the abrasive grains decreases, and the abrasive grains tend to wear out. In general materials, abrasive wear of abrasive grains is small and does not pose a problem. However, particularly in a high-hardness material, abrasive wear of abrasive grains becomes severe, and the processing quality may deteriorate. In the present invention, the abrasive wear of the abrasive grains is further suppressed by further reducing the peripheral speed of the grindstone.
　研削工程で用いる研削砥石１６は、例えば、酸化物、炭化物、窒化物及びダイヤモンドなどの砥粒を固めたものを用いることができる。この研削砥石１６は、結合剤に長石などの粘土類を用いて高温で焼成するビトリファイドボンド、金属で固定化するメタルボンド、フェノール、ホルマリン系などの合成樹脂を用いて低温で焼成するレジンボンド等が挙げられる。研削装置１０では、従来ない低周速で研削砥石１６を回転することから、その硬さや気孔率などを適宜調整したものを用いる。例えば、研削砥石１６は、砥粒をメッキ層で固定する電着砥粒としてもよい。 As the grinding wheel 16 used in the grinding process, for example, a solidified abrasive such as an oxide, carbide, nitride and diamond can be used. The grinding wheel 16 is a vitrified bond that is fired at high temperature using clay such as feldspar as a binder, a metal bond that is fixed with metal, a resin bond that is fired at low temperature using a synthetic resin such as phenol or formalin. Is mentioned. In the grinding apparatus 10, the grinding wheel 16 is rotated at a low peripheral speed that has not been conventionally used, so that the hardness, the porosity, and the like of the grinding machine 10 are appropriately adjusted. For example, the grinding wheel 16 may be an electrodeposited abrasive that fixes the abrasive with a plating layer.
（ラップ工程）
　ラップ工程では、図３に示すラップ加工装置２０を用いて被研磨物１８をラップ加工する。図３に示すように、ラップ加工装置は、上定盤２２と、この上定盤２２に対向するように配置され、回転する下定盤２３と、これらの間に挟み込まれる円盤形状のキャリア２４と、を有する。キャリア２４の下面に被研磨物１８を配置し、上定盤２２と下定盤２３とで被研磨物１８を挟み、砥粒で研磨して平坦性を高める。 (Lapping process)
In the lapping process, the workpiece 18 is lapped using a lapping apparatus 20 shown in FIG. As shown in FIG. 3, the lapping apparatus includes an upper surface plate 22, a lower surface plate 23 that is disposed so as to face the upper surface plate 22, and a disk-shaped carrier 24 that is sandwiched therebetween. Have. An object to be polished 18 is disposed on the lower surface of the carrier 24, the object to be polished 18 is sandwiched between the upper surface plate 22 and the lower surface plate 23, and polished with abrasive grains to improve flatness.
（ＣＭＰ工程）
　ＣＭＰ工程では、図４に示すＣＭＰ装置３０を用いて被研磨物１８を化学機械研磨する。図４に示すように、ＣＭＰ装置３０は、定盤３２、研磨ヘッド３３、スラリー供給装置３４を備える。定盤３２には、研磨パッド４０が取り付けられている。スラリー供給装置３４からは、スラリーが研磨パッド４０上に供給され、定盤３２が回転するとともに、研磨ヘッド３３が、研磨パッド４０上に配置された被研磨物１８を研磨パッド４０に対して押しつけつつ定盤３２と同方向に回転することにより、被研磨物１８の表面１９を化学的及び機械的に研磨する。スラリーは、ＣＭＰ装置３０のスラリー供給装置３４から、研磨パッド４０の表面上に供給する。スラリーは、研磨材、酸、酸化剤、界面活性剤および水を含む。研磨材としてコロイダルシリカ、ヒュームドシリカ、アルミナ、チタニア、ジルコニア、ダイヤモンドおよびこれらの混合物等を利用することができる。また、酸化剤としては、過酸化物、硝酸塩等を利用することができる。さらに、スラリーには、ｐＨ調整剤を含んでもよい。ｐＨ調整剤は、スラリーのｐＨを所望の値に調整するために酸性物質又は塩基性物質を適宜使用する。 (CMP process)
In the CMP process, the workpiece 18 is subjected to chemical mechanical polishing using the CMP apparatus 30 shown in FIG. As shown in FIG. 4, the CMP apparatus 30 includes a surface plate 32, a polishing head 33, and a slurry supply device 34. A polishing pad 40 is attached to the surface plate 32. The slurry is supplied from the slurry supply device 34 onto the polishing pad 40, the surface plate 32 rotates, and the polishing head 33 presses the object 18 disposed on the polishing pad 40 against the polishing pad 40. While rotating in the same direction as the surface plate 32, the surface 19 of the workpiece 18 is chemically and mechanically polished. The slurry is supplied onto the surface of the polishing pad 40 from the slurry supply device 34 of the CMP apparatus 30. The slurry includes an abrasive, an acid, an oxidant, a surfactant, and water. Colloidal silica, fumed silica, alumina, titania, zirconia, diamond, and a mixture thereof can be used as the abrasive. Further, as the oxidizing agent, a peroxide, nitrate, or the like can be used. Further, the slurry may contain a pH adjusting agent. As the pH adjuster, an acidic substance or a basic substance is appropriately used in order to adjust the pH of the slurry to a desired value.
　以上説明した実施形態の研磨物の製造方法によれば、研削工程の加工品質をより向上させることができ、ひいては研削及び研磨工程の処理時間をより短縮することができる。この理由は、研削工程において、従来行うことがなかった、より低速な研削処理を行うことにより、加工によって生じるひずみ、変質層、マイクロクラックなどの生成をより抑制することができるためである。その結果、研削工程での処理時間は長くなるものの、研削工程後の研磨工程に要する時間を大きく短縮することができ、研削及び研磨工程での処理時間を短縮することができる。 According to the method for manufacturing an abrasive according to the embodiment described above, the processing quality of the grinding process can be further improved, and the processing time of the grinding and polishing processes can be further shortened. This is because the generation of strain, deteriorated layers, microcracks, and the like caused by processing can be further suppressed by performing a lower-speed grinding process that has not been conventionally performed in the grinding process. As a result, although the processing time in the grinding process becomes longer, the time required for the polishing process after the grinding process can be greatly shortened, and the processing time in the grinding and polishing process can be shortened.
　なお、本発明は上述した実施形態に何ら限定されることはなく、本発明の技術的範囲に属する限り種々の態様で実施し得ることはいうまでもない。 It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.
　以下には、研磨物を具体的に製造した例を実施例として説明する。なお、本発明は以下の実施例に何ら限定されることはなく、本発明の技術的範囲に属する限り種々の態様で実施し得ることはいうまでもない。 Hereinafter, an example in which an abrasive is specifically manufactured will be described as an example. In addition, this invention is not limited to the following Examples at all, and it cannot be overemphasized that it can implement with a various aspect, as long as it belongs to the technical scope of this invention.
［研削装置の作製］
　低速で回転する研削モータ１４を備えた研削装置はその要望がなく、装置として存在しなかったことから、上述した研削装置を作製した。研削砥石を周速１０ｍ／ｓ以下で回転駆動したときに十分なトルク（例えば、２０～６０Ｎ・ｍ）が発生する研削モータを用い、周速１０ｍ／ｓ以下で研削モータを回転駆動するコントローラを用いて、研削装置を作製した。 [Production of grinding equipment]
The grinding apparatus provided with the grinding motor 14 that rotates at a low speed is not desired and does not exist as an apparatus, so the above-described grinding apparatus was produced. A controller that drives a grinding motor at a peripheral speed of 10 m / s or less using a grinding motor that generates a sufficient torque (for example, 20 to 60 N · m) when the grinding wheel is rotated at a peripheral speed of 10 m / s or less. A grinding apparatus was produced using this.
［実施例１］
　高純度アルミナの単結晶ウェハを用意し、図２に示す研削装置におり、研削工程を行った。研削工程では、直径１５０ｃｍの研削砥石を用い、周速１０ｍ／ｓ（回転数１０００ｒｐｍ）で回転させて、被研磨物であるアルミナウェハの研削加工を行った。このとき、切り込み量は３０μｍ／ｍｉｎとした。また、研削砥石は、ガラスを主成分とするビトリファイドボンド砥石を用いた。 [Example 1]
A single crystal wafer of high-purity alumina was prepared, and the grinding process shown in FIG. 2 was performed. In the grinding step, an alumina wafer, which is an object to be polished, was ground by using a grinding wheel having a diameter of 150 cm and rotating at a peripheral speed of 10 m / s (rotation speed: 1000 rpm). At this time, the cutting amount was 30 μm / min. Moreover, the vitrified bond grindstone which has glass as a main component was used for the grinding grindstone.
（ラップ工程）
　上記研削したウェハに対して、ラップ加工を行った。ラップ加工は、上記図３に示したラップ加工装置２０を用い、上定盤の回転数を６０ｒｐｍとし、下定盤の回転数を６０ｒｐｍとし、３時間、砥粒をダイヤモンドとして処理を行った。 (Lapping process)
A lapping process was performed on the ground wafer. In the lapping, the lapping apparatus 20 shown in FIG. 3 was used, and the rotation speed of the upper surface plate was 60 rpm, the rotation speed of the lower surface plate was 60 rpm, and the abrasive grains were treated for 3 hours with diamond.
［比較例１］
　研削砥石を周速周速１５ｍ／ｓ（回転数１５００ｒｐｍ）で回転させ、切り込み量を６０μｍ／ｍｉｎとし、ラップ時間を９時間とした以外は実施例１と同様の処理を行ったものを比較例１とした。 [Comparative Example 1]
A comparative example in which the grinding wheel was rotated at a peripheral speed of 15 m / s (rotation number: 1500 rpm), the cutting amount was set to 60 μm / min, and the lapping time was set to 9 hours, and the same processing as in Example 1 was performed. It was set to 1.
［実施例２～３］
　被研磨物を、サファイアウェハ、ＧａＮウェハとした以外は、実施例１と同様の処理を行ったものをそれぞれ実施例２～３とした。 [Examples 2 to 3]
Except that the object to be polished was a sapphire wafer or a GaN wafer, the same processing as in Example 1 was performed as Examples 2 to 3, respectively.
［比較例２～３］
　被研磨物を、サファイアウェハ、ＧａＮウェハとした以外は、比較例１と同様の処理を行ったものをそれぞれ比較例２～３とした。 [Comparative Examples 2 to 3]
Comparative Examples 2 to 3 were the same as those of Comparative Example 1 except that the objects to be polished were sapphire wafers and GaN wafers.
（表面粗さＲａ測定）
　実施例１～４及び比較例１の表面粗さＲａを測定した。測定は、ＪＩＳ－Ｂ０６０１－２００１に準じて行った。 (Surface roughness Ra measurement)
The surface roughness Ra of Examples 1 to 4 and Comparative Example 1 was measured. The measurement was performed according to JIS-B0601-2001.
（結果と考察）
　図５は、実施例１及び比較例１の研削後の表面画像である。図５に示すように、研削後の表面粗さＲａは、比較例１では０．５μｍであるのに対し、実施例１では、０．０１μｍであり、表面粗さが向上していた。また、加工によって生じるひずみ、変質層、マイクロクラックなどの生成が抑制されていることがわかった。このため、研削及びラップ工程の終了までのトータル時間は、比較例１では９．５時間であるのに対し、実施例１では４．０時間であり、実施例１では全体の処理時間が短くなることが明らかになった。実施例２～３についても同様であり、それぞれ表面粗さＲａが０．０１μｍ及び０．０１μｍであり、比較例２～３のそれぞれ０．１μｍ及び０．２μｍに比して表面粗さＲａが向上していた。また、実施例２～３では、研削工程とラップ工程との全体で、処理時間がそれぞれ４時間及び７時間であり、比較例２～３のそれぞれ８時間及び１５時間に比して、全体の処理時間が短くなった。このように、研削工程において、従来行うことがなかった、より低速な研削処理を行うことにより、加工によって生じるひずみ、変質層、マイクロクラックなどの生成をより抑制することができ、その結果、研削工程での処理時間は長くなるものの、研削工程後のラップ工程に要する時間を大きく短縮することができ、研削及び研磨工程での処理時間をより短縮することができることがわかった。 (Results and discussion)
FIG. 5 is a surface image after grinding in Example 1 and Comparative Example 1. As shown in FIG. 5, the surface roughness Ra after grinding was 0.5 μm in Comparative Example 1, whereas it was 0.01 μm in Example 1, and the surface roughness was improved. Moreover, it turned out that generation | occurrence | production of the distortion which arises by a process, an altered layer, a microcrack, etc. is suppressed. For this reason, the total time until the end of the grinding and lapping process is 9.5 hours in Comparative Example 1, whereas it is 4.0 hours in Example 1, and the entire processing time is short in Example 1. It became clear that The same applies to Examples 2 to 3, the surface roughness Ra is 0.01 μm and 0.01 μm, respectively, and the surface roughness Ra is 0.1 μm and 0.2 μm of Comparative Examples 2 to 3, respectively. It was improving. In Examples 2 to 3, the processing time for the grinding process and the lapping process is 4 hours and 7 hours, respectively. Compared to 8 hours and 15 hours for Comparative Examples 2 to 3, respectively, Processing time has been shortened. In this way, by performing a slower grinding process, which has not been performed in the past in the grinding process, it is possible to further suppress the generation of strain, altered layers, microcracks, and the like caused by processing. Although the processing time in the process becomes longer, it has been found that the time required for the lapping process after the grinding process can be greatly reduced, and the processing time in the grinding and polishing process can be further reduced.
　本出願は、２０１３年１０月２日に出願された日本国特許出願第２０１３－２０６８８８号を優先権主張の基礎としており、引用によりその内容の全てが本明細書に含まれる。 This application is based on Japanese Patent Application No. 2013-206888 filed on Oct. 2, 2013, and the entire contents of which are incorporated herein by reference.
　本発明の被研磨物の研磨方法は、半導体ウェハ等の被研磨物の表面の研磨に用いることができる。 The method for polishing an object to be polished according to the present invention can be used for polishing the surface of an object to be polished such as a semiconductor wafer.
１０　研削装置、１１　コントローラ、１２　研削機構、１４　研削モータ、１５　台金、１６　研削砥石、１８　被研磨物、１９　表面、２０　ラップ加工装置、２２　上定盤、２３　下定盤、２４　キャリア、３０　ＣＭＰ装置、３２　定盤、３３　研磨ヘッド、３４　スラリー供給装置、４０　研磨パッド。 10 grinding device, 11 controller, 12 grinding mechanism, 14 grinding motor, 15 base metal, 16 grinding wheel, 18 workpiece, 19 surface, 20 lapping device, 22 upper surface plate, 23 lower surface plate, 24 carrier, 30 CMP Equipment, 32 surface plate, 33 polishing head, 34 slurry supply device, 40 polishing pad.

Claims (4)

  1. 　被研磨物を研磨し研磨物を製造する方法であって、
    　周速１０ｍ／ｓ以下で回転した砥石により前記被研磨物の表面を研削する研削工程、を含む研磨物の製造方法。     A method for producing a polished article by polishing an object to be polished,
    A grinding method for grinding a surface of the object to be polished with a grindstone rotated at a peripheral speed of 10 m / s or less.
  2. 　前記研削工程では、周速０．５ｍ／ｓ以上で回転した砥石により前記被研磨物の表面を研削する、請求項１に記載の研磨物の製造方法。 The method for manufacturing a polished object according to claim 1, wherein in the grinding step, the surface of the object to be polished is ground with a grindstone rotated at a peripheral speed of 0.5 m / s or more.
  3. 　前記研削工程では、前記被研磨物としてアルミナ、サファイア、炭化ケイ素及び窒化ガリウムの表面を研削する、請求項１又は２に記載の研磨物の製造方法。 The method for producing a polished article according to claim 1 or 2, wherein, in the grinding step, a surface of alumina, sapphire, silicon carbide and gallium nitride is ground as the object to be polished.
  4. 　請求項１～３のいずれか１項に記載の研磨物の製造方法であって、
    　前記研削後の前記被研磨物を砥粒で研磨するラップ工程、を含む研磨物の製造方法。     A method for producing an abrasive according to any one of claims 1 to 3,
    A lapping process for polishing the object to be polished after grinding with abrasive grains.
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