CN102501045A - Method and device for processing nickel target component - Google Patents
Method and device for processing nickel target component Download PDFInfo
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- CN102501045A CN102501045A CN2011103213097A CN201110321309A CN102501045A CN 102501045 A CN102501045 A CN 102501045A CN 2011103213097 A CN2011103213097 A CN 2011103213097A CN 201110321309 A CN201110321309 A CN 201110321309A CN 102501045 A CN102501045 A CN 102501045A
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Abstract
The invention provides a method for processing a nickel target component. The method comprises the following steps of: providing a back plate with multiple water tanks on one side and a nickel target blank with purity of 99.99%; welding the nickel target material and the back plate together; fixing the nickel target component on a lathe for turning the nickel target blank to obtain the nickel target; and fixing the nickel target component on a grinding machine for grinding the nickel target. By reasonably selecting the lathe blade and strictly controlling the processing parameters, the defects on the surface of the nickel target are reduced in the lathe processing; and after the lathe processing is finished, the nickel target is ground and polished by a grinding machine and a reasonably-selected grinding tool so as to further reduce defects on the surface of the nickel target and obtain the nickel target with high dimensional accuracy and low surface roughness and obtain the nickel target component conforming to the sputtering performance. The invention also provides a processing method capable of processing the nickel target component.
Description
Technical field
The invention belongs to the Machining Technology field in the semiconductor manufacturing, particularly relate to a kind of processing method and processing unit (plant) of nickel target material assembly.
Background technology
The physical vapor deposition (PVD) technology is applied to a lot of fields, and it utilizes the sputtering target material assembly to provide to have the thin-film material deposition thing with precise thickness of atom level smooth surface.Target material assembly is to be made up of target that meets sputtering performance and the backboard that is suitable for combining with target and have certain intensity.In sputter procedure, target material assembly is assembled to the sputter base station, thereby the target that is arranged in the chamber that is full of inert gas atmosphere is exposed to electric field generation ion plasma.The plasma of ion plasma and the surface of sputtering target material bump, thereby from target material surface effusion atom.Voltage difference between target and the base material to be coated makes the effusion atom on substrate surface, form the film of expection, and the quality of film can receive the influence of target material surface roughness.When the target material surface roughness was big, the surface of target can exist some sizes to surpass the convexity of certain level, and in the process of sputter, the convexity on the target material surface can produce paradoxical discharge (little arc discharge).And paradoxical discharge can cause macroparticle to spill and be deposited on the substrate surface to be coated on the sputter base station from target material surface, thereby makes the short circuit that forms spot on the film of formation and cause semiconductor devices.The machining accuracy of therefore processing control target material surface in the process of target material assembly is extremely important.
At present; The mechanical processing technique of nickel target material assembly that contains the high-purity nickel target is very immature; Correlative study for the machined parameters of machining also almost is in the blank stage, therefore presses for a kind ofly can produce nickel target material assembly processing method and the processing unit (plant) that contains dimensional accuracy height, high-purity nickel target that surface roughness is low.
Summary of the invention
The problem that the present invention will solve provides a kind of processing method and processing unit (plant) of nickel target material assembly, and wherein the material of nickel target is 4N nickel (being that purity is 99.99%).The nickel target material assembly that is processed by this method has dimensional accuracy height, nickel target that surface roughness is low.
For addressing the above problem, the present invention provides a kind of processing method of nickel target material assembly, may further comprise the steps:
Backboard, the purity that provides a side to be provided with a plurality of tanks is 99.99% nickel target blank;
Said nickel target blank and said backboard are welded together;
Said nickel target material assembly is fixed on the lathe said nickel target blank is carried out turning processing to obtain the nickel target;
Said nickel target material assembly is fixed on the grinding machine said nickel target is carried out grinding.
Optional, the cutter of said lathe adopts cubic boron nitride blade.
Optional, said turning processing comprises the fine finishining after roughing and the roughing.
Optional, when carrying out said roughing, the speed of mainshaft of said lathe is 300r/min～500r/min.
Optional, when carrying out said roughing, the amount of feeding of said lathe is 0.3mm～0.5mm.
Optional, when carrying out said fine finishining, the speed of mainshaft of said lathe is 250r/min～300r/min.
Optional, when carrying out said fine finishining, the amount of feeding of said lathe is 0.01mm～0.1mm.
Optional, the grinding tool of said grinding machine adopts cubic boron nitride abrasive wheel.
Optional, the granularity of said cubic boron nitride abrasive wheel is 180 orders.
Optional, when carrying out grinding, the rotating speed of said cubic boron nitride abrasive wheel is 2800r/min～3200r/min.
Optional, when carrying out grinding, the feed speed of said cubic boron nitride abrasive wheel is 450mm/min～550mm/min.
Optional, when carrying out grinding, the amount of feeding of said cubic boron nitride abrasive wheel is 0.005mm～0.02mm.
Optional, the rotating speed of said cubic boron nitride abrasive wheel is 3000r/min.
Optional, before said nickel target blank and said backboard welded together, also comprise the step that said nickel target blank, backboard are cleaned.
Optional, carry out after the said turning procedure of processing, before the said grinding step, also comprise the step that said nickel target, backboard are cleaned.
Optional, said nickel target blank and said backboard are welded together in the step, said nickel target blank and said backboard link together through soldering.
Optional, when carrying out said grinding, utilize emulsion that said cubic silicon nitride emery wheel, nickel target material assembly are cooled off.
For addressing the above problem, the present invention also provides a kind of processing unit (plant) of nickel target material assembly, and said nickel target material assembly comprises that the backboard, the purity that link together are 99.99% nickel target blank, and said processing unit (plant) comprises:
Lathe, its cutter adopts cubic boron nitride blade;
Grinding machine, its grinding tool adopts cubic boron nitride abrasive wheel.
The present invention has the following advantages:
Form the nickel target material assembly after backboard and nickel target blank welded together, the nickel target blank in the nickel target material assembly is carried out machining, comprise the nickel target blank is carried out turning processing and grinding.Through rationally selecting the lathe blade for use, the defective when strict control machined parameters has reduced machined on the nickel target material surface is to obtain the higher nickel target of precision; After treating that machined into is accomplished; Utilize grinding machine and rationally select for use grinding tool that the nickel target is carried out grinding, polishing further to reduce the defective on the nickel target material surface; Thereby obtain dimensional accuracy height, nickel target that surface roughness is low, and then obtain meeting the nickel target material assembly of sputtering performance.
Description of drawings
Fig. 1 is the flow process chart of nickel target material assembly among the processing method embodiment of nickel target material assembly of the present invention.
Fig. 2 is the structural representation of nickel target material assembly among the processing method embodiment of nickel target material assembly of the present invention.
Fig. 3 is the cutaway view of Fig. 2 along A-O-A.
The specific embodiment
The processing method and the processing unit (plant) that the purpose of this invention is to provide a kind of nickel target material assembly, wherein the material of nickel target is a 4N nickel.Comprise in the processing method of nickel target material assembly the nickel target in the nickel target material assembly is carried out turning processing, through rationally selecting the lathe blade for use, the defective when strict control machined parameters has reduced machined on the nickel target material surface.After treating that machined into is accomplished; Utilize grinding machine and rationally select for use grinding tool that the nickel target in the nickel target material assembly is carried out grinding, polishing further to reduce the defective on the nickel target material surface; Thereby obtain dimensional accuracy height, nickel target that surface roughness is low, and then obtain meeting the nickel target material assembly of sputtering performance.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
People hope under the prerequisite that guarantees the machinery processing apparatus life-span to process the high product of precision the shortest process time usually in mechanical processing process.Therefore, carrying out to take into full account the factors such as performance of material, hardness, shape, allowance and the processing unit (plant) of workpiece before the machining, and then selecting suitable machining tool and processing conditions.Be the machining three elements at processing conditions described in the field of machining: rotating speed, the amount of feeding and feed speed.Wherein,
Rotating speed: the rotating cycle of rotating object in one minute or one second, its measurement unit is generally r/min or r/s.
The amount of feeding: when workpiece or machining tool whenever rotate a circle or make a round trip, the displacement on direction of feed motion of workpiece and machining tool, its measurement unit is generally mm.
Feed speed: workpiece and the relative displacement of machining tool on direction of feed motion in the unit interval, its measurement unit is generally mm/min.
Fig. 1 is the flow process chart of nickel target material assembly among the processing method embodiment of nickel target material assembly of the present invention, and as shown in Figure 1, the processing method of nickel target material assembly may further comprise the steps:
S1. provide nickel target blank, a side to be provided with the backboard of a plurality of tanks.
S2. nickel target blank, backboard are welded together.
S3. the nickel target material assembly is fixed on the lathe nickel target blank is carried out turning processing to obtain the nickel target.
S4. after the turning processing, nickel target, backboard are cleaned.
S5. the nickel target material assembly is fixed on the grinding machine so that the nickel target is carried out grinding.
Fig. 2 is the structural representation of nickel target material assembly among the processing method embodiment of nickel target material assembly of the present invention, and Fig. 3 is the cutaway view of Fig. 2 along A-O-A.The work flow that below Fig. 1 and Fig. 2, Fig. 3 is combined above-mentioned nickel target material assembly elaborates.
S1. provide nickel target blank, a side to be provided with the backboard of a plurality of tanks.
The material of nickel target blank is 4N nickel (being that purity is 99.99%), also comprises copper in the present embodiment in the material of nickel target blank, and the nickel target blank can comprise other metals in other embodiments.According to the actual requirement of applied environment, sputtering equipment, the shape of nickel target blank 10 can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any.Preferred version is circular, and its diameter dimension is for adding the allowance of 3mm on design size, and its gauge is for adding the allowance of 1mm on design size.The purpose that allowance is set is to provide well-to-do processing space to obtain satisfactory nickel target material assembly to the nickel target blank.
S2. nickel target blank, backboard are welded together.
For nickel target blank 10, backboard 11 can better be combined,, both can carry out machining before welding so that both preparatory mating surfaces reach necessary fineness (being surface roughness) to the preparatory mating surface of nickel target blank 10, backboard 11.And then nickel target blank 10, backboard 11 cleaned.The method of cleaning nickel target blank 10, backboard 11 has a variety of, and a kind of method wherein is to utilize organic solvent to clean.Organic solvent can be any in alcohol, isobutanol (IBA), isopropyl alcohol (IPA) or the mixed propyl alcohol (IPB).
Soldering processes capable of using weld together nickel target blank 10, backboard 11, can also otherwise nickel target blank 10, backboard 11 be welded together certainly.
S3. the nickel target material assembly is fixed on the lathe nickel target blank is carried out turning processing to obtain the nickel target.
Make the backboard 11 in the turning attachment clamping nickel target material assembly, utilize lathe tool that nickel target blank 10 is carried out turning processing then.As shown in Figure 3, because the degree of depth of tank 12 is bigger in the backboard 11, so the thinner thickness of corresponding tank 12 positions in the backboard 11.Nickel target blank 10 is carried out turning processing, and especially when being worked near the position of tank 12, the nickel target material assembly rigidity of this position, mechanical strength are less, and this position is stressed less, the phenomenon of the cutter that very easily occurs this moment shaking.The cutter that shakes can have a strong impact on the machining accuracy of workpiece, the generation of the cutter phenomenon of therefore in process, need as far as possible avoiding shaking.
The inventor finds, can avoid or reduce the generation of the cutter phenomenon of shaking through rationally selecting cutter, adjustment machined parameters for use.Therefore, the cutter of lathe is selected cubic boron nitride (CBN) blade.Cubic boron nitride blade has lot of advantages; For example hardness is high; Thereby select bigger rotating speed to improve working (machining) efficiency in the time of therefore can making lathe turning; And this moment cubic boron nitride blade distortion less, can obtain the machining accuracy high product, the product size precision that promptly obtains is high, surface roughness is low.
The turning process of nickel target material assembly comprises roughing, fine finishining.At first the nickel target blank in the nickel target material assembly 10 is carried out roughing.At this moment, the lathe spindle rotating speed is 300r/min～500r/min, and the amount of feeding is 0.3mm～0.5mm.Then the nickel target blank in the nickel target material assembly 10 is carried out fine finishining.At this moment, the lathe spindle rotating speed is 250r/min～300r/min, and the amount of feeding is 0.01mm～0.1mm.Certainly, after carrying out roughing, before the fine finishining, also can carry out semifinishing to the nickel target blank in the nickel target material assembly 10 by corresponding adjustment machined parameters.After the turning processing, thereby the precision of nickel target blank 10 improves greatly and obtains nickel target 10 in the nickel target material assembly.
S4. after the turning processing, nickel target, backboard are cleaned.
After carrying out turning, can be attached with the turning bits on the nickel target material assembly, influence the following process precision of nickel target material assembly, can clean nickel target 10, backboard 11 for avoiding the turning bits.The method of cleaning nickel target 10, backboard 11 has a variety of, and a kind of method wherein is to utilize organic solvent to clean.Organic solvent can be any in alcohol, isobutanol (IBA), isopropyl alcohol (IPA) or the mixed propyl alcohol (IPB).
S5. the nickel target material assembly is fixed on the grinding machine so that the nickel target is carried out grinding.
Carry out after the above-mentioned steps S3, though the precision of nickel target material surface increases, but still have the part defective, its surface roughness is the requirement that fineness can't reach sputtering technology.Therefore need the nickel target 10 in the nickel target material assembly is further processed to improve the fineness of nickel target material surface.
Utilize grinding machine that the nickel target in the nickel target material assembly is further processed.It is 180 purpose cubic boron nitride abrasive wheels that grinding tool in the grinding machine is selected granularity.Cubic boron nitride abrasive wheel has lot of advantages, as can carrying out Speed Grinding, thereby improves working (machining) efficiency, and in addition, thereby the machining accuracy that it can also improve grinding improves the crudy of product surface.Utilize cubic boron nitride abrasive wheel that nickel target 10 is carried out grinding, at this moment, the rotating speed of cubic boron nitride abrasive wheel can be 2800r/min～3200r/min, and feed speed can be 450mm/min～550mm/min.
The rotating speed of cubic boron nitride abrasive wheel is to there being very large influence its service life.If rotating speed is too high, the temperature of cubic boron nitride abrasive wheel rises rapidly because of friction, causes its life-span to significantly reduce; If rotating speed is low excessively, can reduce working (machining) efficiency.For this reason, when its rotating speed is 3000r/min, can obtain a balance preferably between cubic boron nitride abrasive wheel life-span and the working (machining) efficiency.
The amount of feeding is the key factor of decision work piece surface quality.If the amount of feeding is too small, the wearing and tearing of the grinding face of cubic boron nitride abrasive wheel are bigger, and its life-span is reduced greatly; If the amount of feeding is excessive, the defective that can cause the nickel target material assembly to occur bursting apart.Therefore, the amount of feeding is selected 0.005mm～0.02mm.
In addition; In order to reduce cubic boron nitride abrasive wheel and the consequently machining accuracy reduction of nickel target of nickel target material assembly distortion that causes because of temperature arrising caused by friction; And in order to prolong the service life of cubic boron nitride abrasive wheel; In the process of grinding, utilize emulsion cubic boron nitride emery wheel and nickel target material assembly to cool off, thereby improve machining accuracy, and prolonged the service life of cubic boron nitride abrasive wheel with the distortion that reduces them.
In sum, the processing method of nickel target material assembly has the following advantages among the present invention:
Form the nickel target material assembly after backboard and nickel target blank welded together, the nickel target blank in the nickel target material assembly is carried out machining, comprise the nickel target blank is carried out turning processing and grinding.Through rationally selecting the lathe blade for use, the defective when strict control machined parameters has reduced machined on the nickel target material surface is to obtain the higher nickel target of precision; After treating that machined into is accomplished; Utilize grinding machine and rationally select for use grinding tool that the nickel target is carried out grinding, polishing further to reduce the defective on the nickel target material surface; Thereby obtain dimensional accuracy height, nickel target that surface roughness is low, and then obtain meeting the nickel target material assembly of sputtering performance.
Accordingly, the present invention also provides a kind of processing unit (plant) of nickel target material assembly, and said nickel target material assembly comprises that the backboard, the purity that link together are 99.99% nickel target blank, and said processing unit (plant) comprises:
Lathe, its cutter adopts cubic boron nitride blade;
Grinding machine, its grinding tool adopts cubic boron nitride abrasive wheel.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (18)
1. the processing method of a nickel target material assembly is characterized in that, may further comprise the steps:
Backboard, the purity that provides a side to be provided with a plurality of tanks is 99.99% nickel target blank;
Said nickel target blank and said backboard are welded together;
Said nickel target material assembly is fixed on the lathe said nickel target blank is carried out turning processing to obtain the nickel target;
Said nickel target material assembly is fixed on the grinding machine said nickel target is carried out grinding.
2. processing method according to claim 1 is characterized in that, the cutter of said lathe adopts cubic boron nitride blade.
3. processing method according to claim 2 is characterized in that, said turning processing comprises the fine finishining after roughing and the roughing.
4. processing method according to claim 3 is characterized in that, when carrying out said roughing, the speed of mainshaft of said lathe is 300r/min～500r/min.
5. processing method according to claim 3 is characterized in that, when carrying out said roughing, the amount of feeding of said lathe is 0.3mm～0.5mm.
6. processing method according to claim 3 is characterized in that, when carrying out said fine finishining, the speed of mainshaft of said lathe is 250r/min～300r/min.
7. processing method according to claim 3 is characterized in that, when carrying out said fine finishining, the amount of feeding of said lathe is 0.01mm～0.1mm.
8. processing method according to claim 1 is characterized in that, the grinding tool of said grinding machine adopts cubic boron nitride abrasive wheel.
9. processing method according to claim 8 is characterized in that, the granularity of said cubic boron nitride abrasive wheel is 180 orders.
10. processing method according to claim 9 is characterized in that, when carrying out said grinding, the rotating speed of said cubic boron nitride abrasive wheel is 2800r/min～3200r/min.
11. processing method according to claim 9 is characterized in that, when carrying out said grinding, the feed speed of said cubic boron nitride abrasive wheel is 450mm/min～550mm/min.
12. processing method according to claim 9 is characterized in that, when carrying out said grinding, the amount of feeding of said cubic boron nitride abrasive wheel is 0.005mm～0.02mm.
13. processing method according to claim 10 is characterized in that, the rotating speed of said cubic boron nitride abrasive wheel is 3000r/min.
14. processing method according to claim 1 is characterized in that, before said nickel target blank and said backboard are welded together, also comprises the step that said nickel target blank, backboard are cleaned.
15. processing method according to claim 1 is characterized in that, carries out after the said turning procedure of processing, before the said grinding step, also comprises the step that said nickel target, backboard are cleaned.
16. processing method according to claim 1 is characterized in that, in the step that said nickel target blank and said backboard are welded together, said nickel target blank and said backboard link together through soldering.
17. processing method according to claim 8 is characterized in that, when carrying out said grinding, utilizes emulsion that said cubic silicon nitride emery wheel, nickel target material assembly are cooled off.
18. the processing unit (plant) of a nickel target material assembly is characterized in that, said nickel target material assembly comprises that the backboard, the purity that link together are 99.99% nickel target blank, and said processing unit (plant) comprises:
Lathe, its cutter adopts cubic boron nitride blade;
Grinding machine, its grinding tool adopts cubic boron nitride abrasive wheel.
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| CN201110321309.7A CN102501045B (en) | 2011-10-20 | 2011-10-20 | Method and device for processing nickel target component |
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| CN106312565A (en) * | 2015-06-15 | 2017-01-11 | 宁波江丰电子材料股份有限公司 | Machining method of target assembly |
| CN106346344A (en) * | 2015-07-15 | 2017-01-25 | 宁波江丰电子材料股份有限公司 | Copper target material surface processing method |
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| CN108660423A (en) * | 2017-03-28 | 2018-10-16 | 宁波江丰电子材料股份有限公司 | The method for turning of target material assembly |
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| CN108672720A (en) * | 2018-07-27 | 2018-10-19 | 宁波江丰电子材料股份有限公司 | A kind of method for turning of high-purity tantalum target |
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| CN112846651A (en) * | 2020-12-25 | 2021-05-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
| CN112917100A (en) * | 2021-01-27 | 2021-06-08 | 宁波江丰电子材料股份有限公司 | Processing method of nickel target material assembly |
| CN113400103A (en) * | 2021-06-18 | 2021-09-17 | 宁波江丰电子材料股份有限公司 | Mechanical processing method of silicon target material |
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| CN106312565B (en) * | 2015-06-15 | 2019-03-05 | 宁波江丰电子材料股份有限公司 | The processing method of target material assembly |
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| CN108672720A (en) * | 2018-07-27 | 2018-10-19 | 宁波江丰电子材料股份有限公司 | A kind of method for turning of high-purity tantalum target |
| CN108977786A (en) * | 2018-09-14 | 2018-12-11 | 合肥瀚鹏新能源有限公司 | A kind of magnetic control spattering target water route backboard |
| CN112846651A (en) * | 2020-12-25 | 2021-05-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
| CN112846651B (en) * | 2020-12-25 | 2022-10-28 | 宁波江丰电子材料股份有限公司 | Method for assembling titanium target and aluminum back plate |
| CN112917100A (en) * | 2021-01-27 | 2021-06-08 | 宁波江丰电子材料股份有限公司 | Processing method of nickel target material assembly |
| CN113400103A (en) * | 2021-06-18 | 2021-09-17 | 宁波江丰电子材料股份有限公司 | Mechanical processing method of silicon target material |
| CN115256058A (en) * | 2022-08-01 | 2022-11-01 | 宁波江丰电子材料股份有限公司 | Machining method of silicon carbide target |
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