CN104419899A - Forming method for target material - Google Patents
Forming method for target material Download PDFInfo
- Publication number
- CN104419899A CN104419899A CN201310371290.6A CN201310371290A CN104419899A CN 104419899 A CN104419899 A CN 104419899A CN 201310371290 A CN201310371290 A CN 201310371290A CN 104419899 A CN104419899 A CN 104419899A
- Authority
- CN
- China
- Prior art keywords
- target
- target material
- material blank
- blank body
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
A forming method for a target material comprises providing a first target material blank with a first thickness; performing at least two times of rough turning on the first target material blank, so as to form a second target material blank with a second thickness; and performing finish turning on the second target material blank. The provided forming method for the target material is in favor of obtaining a target material with a stable sputtering speed.
Description
Technical field
The present invention relates to a kind of formation method of target.
Background technology
Physical vapor deposition (PVD, Physical Vapor Deposition) is that electronics accelerates to fly in the process of substrate to collide with ar atmo under the effect of electric field, ionizes out a large amount of argon ions and electronics.Electronics flies to substrate; Argon ion accelerates under the effect of electric field, and the target (TargetBlank) on bombardment sputtering base station, sputter a large amount of target atom, described target atom (or molecule) is deposited on substrate and forms film.
For convenience, be described to form round pie target (Fig. 1).
For obtaining the target of pre-determined thickness, such as described pre-determined thickness is 15mm, and first should obtain first target material blank body with the first thickness by processing, described first thickness is greater than pre-determined thickness, and such as the first thickness is 17mm.Then, by carrying out once rough turn to described first target material blank body, obtain second target material blank body with the second thickness, such as, 1.5mm is removed in rough turn turning, and the second thickness obtained is 15.5mm.Finally, finish turning is carried out to described second target material blank body, obtain the target that pre-determined thickness is 15mm.
But practice finds, the sputter rate of the target finally obtained is unstable.Sputter rate instability can cause the uneven film thickness one that on substrate, different zones place is formed, and is difficult to the thickness of the film that effective control finally obtains.
In prior art, usually adopt the processing parameter regulating sputtering, such as strength of electric field regulates the speed of sputtering, but not only difficulty is very large in this operation, and is difficult to get a desired effect.
Summary of the invention
The problem that the present invention solves is in prior art, and the sputter rate of target is unstable.
For solving the problem, the invention provides a kind of formation method of target, comprising: first target material blank body with the first thickness is provided; Described first target material blank body is carried out at least twice rough turn, form second target material blank body with the second thickness; Finish turning is carried out to described second target material blank body, obtains target.
Optionally, after forming described second target material blank body, before finish turning is carried out to described second target material blank body, also comprise: described second target material blank body is heat-treated, discharge the stress in described second target material blank body; Or, after obtaining target, described target is heat-treated, discharges the stress in described target.
Optionally, rough turn number of times is three times.
Optionally, the thickness of each rough turn turning is 0.1-1.5mm.
Optionally, the thickness of each rough turn turning is 0.5mm.
Optionally, the material of described target is Al, AlSi, AlCu or AlSiCu.
Optionally, described thermal treatment comprises: described second target base or described target are warming up to 665 DEG C ~ 675 DEG C, and are incubated 55min ~ 65min.
Optionally, the thickness of described target is 5-25mm.
Optionally, the thickness of described target is 15mm.
Optionally, the thickness of the first target material blank body is 17mm.
Compared with prior art, technical scheme of the present invention has the following advantages:
The technical program employing at least twice is rough turn processes described first target material blank body, with only carry out once in prior art rough turn compared with, the thickness reduction that the technical program is at every turn rough turn, time rough turn, the reactive force of the first target material blank body is reduced, and then the thickness of the deformation layer formed in described second target material blank body, and the stress formed in described second target material blank body reduces.Because deformation layer and stress are the principal elements causing target as sputter speed instability, therefore the thickness of deformation layer and the reduction of stress are conducive to obtaining the stable target of sputter rate.
Further, described second target material blank body is heat-treated.Described thermal treatment can discharge the stress existed in described second target material blank body, and the deformation layer in described second target material blank body is repaired, and is conducive to obtaining the stable target of sputter rate.
Further, described target is heat-treated.Described thermal treatment can discharge the stress existed in described target, and the deformation layer in described target is repaired, and is conducive to obtaining the stable target of sputter rate.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of round pie target;
Fig. 2 is the schematic flow sheet of the formation method of target of the present invention;
Fig. 3 to Fig. 5 is the cross-sectional view of formation method each production phase of target of the present invention.
Embodiment
Practice finds, owing to adopting once rough turn technique to obtain the second target material blank body in prior art, time rough turn, the thickness of turning is comparatively large, and this can make to form the larger deformation layer of thickness in the second target material blank body, and there is larger stress.Described deformation layer and stress all can cause the sputter rate of the target formed unstable, and then are difficult to be formed the homogeneous and accurate thin film layer of thickness of thickness on substrate.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
With reference to figure 2, this specific embodiment provides a kind of formation method of target, comprising:
Step S1: first target material blank body with the first thickness is provided;
Step S2: to described first target material blank body carry out three times rough turn, formed and there is the second target material blank body of the second thickness;
Step S3: after forming described second target material blank body, heat-treats described second target material blank body;
Step S4: finish turning is carried out to described second target material blank body, obtains target.
Below in conjunction with relevant drawings, specific embodiments of the invention are described in detail.
In the present embodiment, represent that the numerical value of scope does not comprise end value, such as 15mm-30mm, represent from 15mm to 30mm it is all the numerical range that the present invention protects, but do not comprise these two end values of 15mm and 30mm.
With reference to figure 3, provide first target material blank body 101 with the first thickness H1.
The material of described first target material blank body 101 is Al, AlSi, AlCu, AlSiCu or other target material known in the art.
The thickness of the target that the thickness of described first target material blank body 101 should obtain as required is suitably arranged, and the thickness of described first target material blank body 101 should be greater than the thickness of the target finally obtained.But the thickness of described first target material blank body 101 should not arrange excessive, otherwise not only can cause the waste of material, also can make follow-up complete processing increased frequency; Equally, the thickness of described first target material blank body 101 should not arrange too small, otherwise repairs the defect that technique is formed before when being unfavorable for following process.
In a particular embodiment, the thickness H1 of the first target material blank body is 15mm-30mm.In the present embodiment, the thickness H1 of the first target material blank body is 17mm.
In the present embodiment, the shape of described first target material blank body 101 is round pie.In other embodiments, the shape of described first target material blank body 101 should according to finally wishing that the shape of the target obtained is determined, any shape known in the art is all applicable to the technical program.
With reference to figure 4, to described first target material blank body 101 carry out three times rough turn, formed and there is second target material blank body 102 of the second thickness H2.
If at every turn rough turn thickness is larger, larger to the reactive force of described first target material blank body 101 time rough turn, and then in the thickness of deformation layer (not shown) formed in described second target material blank body 102 and described second target material blank body 102, the stress of formation is larger.The existence of deformation layer and stress can cause the sputter rate of target unstable, make the uneven film thickness one that on substrate, different positions place is formed, and the thickness of film is difficult to control.
So at every turn rough turn thickness is less, be more conducive to making the stable target of sputter rate.But at every turn rough turn thickness is too little, can make rough turn increased frequency, the productive rate of target declines.In the technical program, according to the thickness H1 of the first target material blank body 101 and the thickness of the final target formed, rough turn thickness is rationally set at every turn; Again rough turn number of times is set according to rough turn thickness.
In a particular embodiment, the thickness of each rough turn turning is 0.1-1.5mm.In the present embodiment, the thickness of each rough turn turning is 0.5mm.Namely the thickness that the first target material blank body 101 is removed in turning is altogether 1.5mm, and the second thickness H2 of the second target material blank body 102 obtained is 15.5mm.
In other embodiments, the thickness of three rough turn turning can be different, and the thickness of such as first time rough turn turning is 0.8mm, and the thickness of the rough turn turning of second time is 0.4mm, and the thickness of third time rough turn turning is 0.3mm.
The present embodiment can reduce the thickness of deformation layer at least more than 80%.
In Tutrning Process, process tool turning first target material blank body 101 can produce amount of heat, and first target material blank body 101 surface and process tool between there is adhesivity, therefore, in the course of processing, need to carry out cooling and lubricating to process tool and the first target material blank body 101, avoid the first target material blank body 101 to burst apart and process tool damage.
Usually, in the course of processing, adopt cooling lubricant, in the turning liquid case that this cooling lubricant is placed on turning lathe or turning liquid bath.
In the present embodiment, described cooling lubricant is the turning liquid as turnery processing.The effect of described turning liquid in turnery processing mainly contains:
One, cooling effect, by cooling lubricant and the cutter generated heat because of turning, convection current between chip and the first target material blank body 101 surface and carburetion, turning heat is taken away from cutter and the first target material blank body 101 surface, thus effectively reduce turning temperature, reduce the thermal distortion of the first target material blank body 101 and cutter, keep cutter hardness, improve working accuracy and tool life.
Two, lubrication, the lubrication of cooling lubricant in turning process, rake face and chip, friction between rear knife face and machined surface can be reduced, forming section lubricant film, thus reduce Cutting Force, friction and watt consumption, reduce cutter and the first target material blank body 101 and to rub the surface temperature at position and tool wear, improve the turning ability on the first target material blank body 101 surface.
Three, cleanup action, refer to cooling lubricant in the first target material blank body 101 turning process, the chip that removing generates, abrasive dust and iron powder, greasy dirt and sand grains, prevent the contamination of lathe and the first target material blank body 101, cutter, make the turning cutting edge of cutter or emery wheel keep sharp, unlikelyly affect turning effect.For oil base turning liquid, viscosity is lower, and cleansing power is stronger, especially containing the turning liquid of the Light ends such as kerosene, diesel oil, perviousness and cleaning performance better.Water base turning liquid containing tensio-active agent, cleaning performance is better, because it can form adsorption film from the teeth outwards, particle and greasy filth etc. is stoped to stick on the first target material blank body 101, cutter, it can penetrate on the interface of particle and greasy filth adhesion simultaneously, it is separated from interface, takes away with turning liquid, keep turning liquid to clean.
Except the turning liquid of foregoing description, present invention also offers the spraying in first target material blank body 101 region that can be ejected in processing, have higher speed, kinetic energy is comparatively large, after mixing, can improve the penetrating power of turning liquid with turning liquid.
In the present embodiment, this spraying is alcohol spraying, and when alcohol is sprayed onto the first target material blank body 101 region in processing, evaporation can take away heat, and in addition, alcohol can clean impurity that is water-soluble, that be dissolved in oil simultaneously.It should be noted that, the mass percent concentration of alcohol, more preferably greater than 95%, when spraying alcohol, can adopt the high-pressure air that pressure is higher, to accelerate the mobility of alcohol, promotes cooling performance.
After forming described second target material blank body 102, described second target material blank body 102 is heat-treated.
To the concrete steps that described second target material blank body 102 is heat-treated be:
According to the material behavior of the second target material blank body 102, in the present embodiment, the material of the second target material blank body 102 is Al, AlSi, AlCu or AlSiCu, therefore the second target material blank body 102 is warming up to 300-310 DEG C, is then incubated 20-30min.
Described second target material blank body 102 is heat-treated and has the following advantages:
First, when carrying out rough turn to described first target material blank body 101, even if at every turn rough turn thickness is very little, also inevitably in the second target material blank body 102 formed, form deformation layer and stress, the existence of deformation layer and stress is unfavorable for obtaining the stable target of sputter rate.Heat-treat described second target material blank body 102, can discharge the stress in the second target material blank body 102, and repair the deformation layer in the second target material blank body 102, this is conducive to obtaining the stable target of sputter rate.
Secondly, when carrying out rough turn to described first target material blank body 101, can make to obtain the second target material blank body 102 and harden, be difficult to carry out follow-up finish turning.Described second target material blank body 102 is heat-treated, the second target material blank body 102 can be made to soften, be conducive to follow-up finish turning technique (finish turning technique is carried out after thermal treatment process).
Again, heat-treat described second target material blank body 102, the distortion that thermal treatment produces can be repaired in follow-up finish turning process.
With reference to figure 5, finish turning is carried out to described second target material blank body 102, obtains target 103.
The sputter rate of described target 103 is stablized, and can form thickness homogeneous on substrate, and the accurate thin film layer of thickness.
In a particular embodiment, the thickness H3 of described target 103 is 5-25mm.In the present embodiment, the thickness H3 of described target 103 is 15mm.
During finish turning, need equally to need to adopt cooling lubricant in the course of processing, specifically can carry out rough turn step with reference to described first target material blank body 101.
Above embodiment, with after described second target material blank body 102 of formation, before carrying out finish turning, is heat-treated described second target material blank body 102 and is described the formation method of described target 103 described second target material blank body 102.In other embodiments, also after the described target 103 of formation, described target 103 can be heat-treated.
Above embodiment is be described the formation method of described target 103 for three times with rough turn number of times.In other embodiments, rough turn number of times should be arranged according to rough turn thickness, can be twice or more than three times.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a formation method for target, is characterized in that, comprising:
First target material blank body with the first thickness is provided;
Described first target material blank body is carried out at least twice rough turn, form second target material blank body with the second thickness;
Finish turning is carried out to described second target material blank body, obtains target.
2. the formation method of target as claimed in claim 1, it is characterized in that, after forming described second target material blank body, before finish turning is carried out to described second target material blank body, also comprise: described second target material blank body is heat-treated, discharge the stress in described second target material blank body; Or,
After obtaining target, described target is heat-treated, discharge the stress in described target.
3. the formation method of target as claimed in claim 1, it is characterized in that, rough turn number of times is three times.
4. the formation method of target as claimed in claim 3, it is characterized in that, the thickness of each rough turn turning is 0.1-1.5mm.
5. the formation method of target as claimed in claim 4, it is characterized in that, the thickness of each rough turn turning is 0.5mm.
6. the formation method of target as claimed in claim 1, it is characterized in that, the material of described target is Al, AlSi, AlCu or AlSiCu.
7. the formation method of target as claimed in claim 2, it is characterized in that, described thermal treatment comprises: described second target base or described target are warming up to 300-310 DEG C, and are incubated 20-30min.
8. the formation method of the target as described in claim 1,4 or 5, is characterized in that, the thickness of described target is 5-25mm.
9. the formation method of target as claimed in claim 8, it is characterized in that, the thickness of described target is 15mm.
10. the formation method of target as claimed in claim 9, it is characterized in that, the thickness of the first target material blank body is 17mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310371290.6A CN104419899A (en) | 2013-08-22 | 2013-08-22 | Forming method for target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310371290.6A CN104419899A (en) | 2013-08-22 | 2013-08-22 | Forming method for target material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104419899A true CN104419899A (en) | 2015-03-18 |
Family
ID=52970010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310371290.6A Pending CN104419899A (en) | 2013-08-22 | 2013-08-22 | Forming method for target material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104419899A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107790745A (en) * | 2016-09-07 | 2018-03-13 | 宁波江丰电子材料股份有限公司 | The processing method of target |
| CN108620816A (en) * | 2017-03-24 | 2018-10-09 | 宁波江丰电子材料股份有限公司 | The processing method of target blankss |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569898A (en) * | 2009-06-08 | 2009-11-04 | 宁波江丰电子材料有限公司 | Manufacture method of target material |
| CN101613850A (en) * | 2009-07-27 | 2009-12-30 | 宁波江丰电子材料有限公司 | The working method of aluminium target |
| US20110240467A1 (en) * | 2008-09-25 | 2011-10-06 | Tosoh Corporation | Cylindrical sputtering target, and method for manufacturing same |
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN102922231A (en) * | 2012-10-25 | 2013-02-13 | 昆明贵金属研究所 | Method for machining ruthenium and ruthenium alloy target |
-
2013
- 2013-08-22 CN CN201310371290.6A patent/CN104419899A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110240467A1 (en) * | 2008-09-25 | 2011-10-06 | Tosoh Corporation | Cylindrical sputtering target, and method for manufacturing same |
| CN101569898A (en) * | 2009-06-08 | 2009-11-04 | 宁波江丰电子材料有限公司 | Manufacture method of target material |
| CN101613850A (en) * | 2009-07-27 | 2009-12-30 | 宁波江丰电子材料有限公司 | The working method of aluminium target |
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN102922231A (en) * | 2012-10-25 | 2013-02-13 | 昆明贵金属研究所 | Method for machining ruthenium and ruthenium alloy target |
Non-Patent Citations (1)
| Title |
|---|
| 朱张校等: "《工程材料学》", 31 May 2012, 清华大学出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107790745A (en) * | 2016-09-07 | 2018-03-13 | 宁波江丰电子材料股份有限公司 | The processing method of target |
| CN108620816A (en) * | 2017-03-24 | 2018-10-09 | 宁波江丰电子材料股份有限公司 | The processing method of target blankss |
| CN108620816B (en) * | 2017-03-24 | 2020-04-21 | 宁波江丰电子材料股份有限公司 | Method for processing target blank |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104911552B (en) | Method for reinforcing surface of hot-extrusion die through cementation compounding | |
| CN106498393B (en) | The adaptive coated cutting tool of micro- texture ZrVSiN and its preparation process | |
| CN106312565B (en) | The processing method of target material assembly | |
| CN107815645B (en) | A kind of low-friction coefficient MoS2Base Metal composite solid lubricant film | |
| CN107761072A (en) | A kind of matrix and preparation method of the enhancing of face coat bond strength | |
| CN107523790A (en) | A kind of AlCrSiCuN nano laminated coatings and preparation method thereof | |
| CN104480443B (en) | A kind of hard tough nano combined ZrAlCuN coatings and preparation method thereof | |
| JPWO2016002633A1 (en) | Sputtering target material and manufacturing method thereof | |
| CN105538348A (en) | Cutter and manufacturing method thereof | |
| CN106756846A (en) | A kind of preparation method of codope DLC film | |
| CN104480435A (en) | Indium target and method for producing the same | |
| CN106065460B (en) | Miniature thread forming tap composite coating and its preparation process and Preparation equipment | |
| CN104419899A (en) | Forming method for target material | |
| CN101080331A (en) | Gear surface treatment procedure | |
| CN105755435A (en) | A sputtering surface machining method for a titanium target material | |
| CN104551154A (en) | PCD cutter with high performance | |
| CN108251803A (en) | TiB2Self-lubricating coat in use and preparation method thereof and wear member | |
| CN102691043A (en) | Film coating member and its preparation method | |
| CN103540929A (en) | Cladding method for magnesium-based alloy surface wear-resistant coating | |
| CN103741093B (en) | A kind of preparation process of nitrogen oxidation chromium and diamond-film-like composite coating vermicelli rotor | |
| CN103352200B (en) | Surface deposition has the preparation method of the diamond particles of WC/W compound coating | |
| CN102560339B (en) | Film-coated part and preparation method thereof | |
| CN106119790A (en) | A kind of tungsten nickel target processing method | |
| CN105385992A (en) | Method for preparing nitrogen-aluminum-titanium coating on surface of tool | |
| CN105154880A (en) | Preparation process of TiCN multilayer composite coating layer on slotting cutter surface of steam turbine rotor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150318 |