CN105755435A - A sputtering surface machining method for a titanium target material - Google Patents
A sputtering surface machining method for a titanium target material Download PDFInfo
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- CN105755435A CN105755435A CN201410794803.9A CN201410794803A CN105755435A CN 105755435 A CN105755435 A CN 105755435A CN 201410794803 A CN201410794803 A CN 201410794803A CN 105755435 A CN105755435 A CN 105755435A
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Abstract
A sputtering surface machining method for a titanium target material is disclosed. The method includes subjecting a sputtering surface to first feeding with the feeding amount of the first feeding process being not more than 0.6 mm; and subjecting the sputtering surface to at least one time of second feeding until the thickness of the titanium target material reaches a target thickness with the feeding amount of the each second feeding process being less than the feeding amount of the first feeding process. In the technical scheme, the feeding amount of the first feeding process is not more than 0.6 mm and is less than the feeding amount in the prior art that is 0.9 mm, and the feeding amount of each second feeding process is less than the feeding amount of the first feeding process, and therefore the applied force on the sputtering surface in the first and second feeding processes is small, and a generated stress layer zone and thickness are small. Considering that some white sheets are sputtered in the earlier period of a target material sputtering process and the thin stress layer can be sputtered, subsequent wafer thickness distribution uniformity is nearly influenced. In addition, the second feeding can gradually remove the stress layer generated on the sputtering surface in the first feeding process.
Description
Technical field
The present invention relates to target manufacturing technology field, particularly to the sputtering surface processing method of a kind of titanium target.
Background technology
Vacuum splashing and plating is to be accelerated to fly under the effect of electric field by electronics in the process of substrate to collide with ar atmo, ionize out substantial amounts of argon ion and electronics, electronics flies to substrate, argon ion accelerates bombardment target under the effect of electric field, sputter substantial amounts of target atom, it is deposited on substrate in neutral target atom (or molecule) film forming, and is finally reached the purpose to substrate surface plated film.
Titanium target is the conventional target of vacuum sputtering.Titanium target spindle is obtained after the steps such as experience titanium powder cold pressing treatment, hot pressed sintering；Then titanium target spindle is cut into some titanium targets vertically；And then each titanium target and backboard being welded together, the surface of titanium target backboard dorsad is sputtering surface, for the argon ion bombardment surface in vacuum sputtering process；Afterwards, the sputtering surface of titanium target is carried out turning, titanium target is worked into desired thickness.
In turning process, sputtering surface can be applied active force vertically by lathe tool in rotation process, cuts and feeding vertically with the sputtering surface to titanium target, until obtaining target desired thickness.But, owing to the metal strength of titanium is low, there is bigger plasticity and extensibility, under the active force of feeding process, inside target, be easily formed stressor layers.Due to the difference such as angle of the corresponding size of above-mentioned active force of each position of sputtering surface, relative sputtering surface, titanium target can produce a lot of stressor layers under pressure in inside.Especially, the amount of feeding of existing turning process reaches 0.9mm, and under relatively large inflow, suffered by sputtering surface, active force is bigger, it is easier to produce large range of stressor layers inside titanium target.
Owing to the dislocation energy of titanium target correspondence stressor layers position is higher, in vacuum sputtering process, the titanium target sputter rate in stressor layers position is very fast, so sputter in identical sputtering time in the wafer obtained, the thickness of corresponding stressor layers position relatively other parts are thick, and the thickness of different wafer segment corresponding to stressor layers is also not quite similar, and cause that the thickness distribution of wafer is inconsistent and controls specification beyond standard, the resistance value causing full wafer wafer various piece is uneven, and wafer resistance is bad.
Existing a solution is to increase sputtering time, supplement to try one's best and be formed without stressor layers and be formed with the wafer thickness corresponding to target part of relatively thin stressor layers, make up wafer thickness uniformity difference, but this can increase the loss to titanium target and production time.
Existing another kind of solution is, in sputter procedure, the thickness of the wafer each several part that monitoring sputtering in real time is formed, and the position of sputtering machine table is adjusted according to Real-time Monitoring Data, regulate the sputtering dosage of wafer different piece, obtain the wafer of desired thickness uniformity, but this can extend wafer and become the product time, and then affect wafer production yield.
Summary of the invention
The problem that this invention address that is, in the sputtering surface course of processing of existing titanium target, can produce stressor layers inside titanium target, and the existence of stressor layers causes the wafer thickness uneven distribution that vacuum sputtering process is formed, and causes wafer resistance value uneven.
For solving the problems referred to above, the present invention provides the sputtering surface processing method of a kind of titanium target, and this sputtering surface processing method includes:
Described sputtering surface carries out first feeding, and the range of feeds of described first feeding process is less than or equal to 0.6mm；
Described sputtering surface being carried out the second feeding at least one times, reaches target thickness to titanium its thickness, the amount of feeding of described second feeding process is less than the amount of feeding of the first feeding process every time.
Alternatively, the range of feeds of described first feeding process is: 0.4mm～0.6mm；
The range of feeds of described second feeding process is: 0.25mm～0.35mm.
Alternatively, the amount of feeding of described first feeding process is 0.5mm, and the amount of feeding of described second feeding process is 0.3mm.
Alternatively, the number of times of described second feeding is 3 times.
Alternatively, after all second feedings, also include: described sputtering surface is processed by shot blasting.
Alternatively, use feeding technique, described sputtering surface is processed by shot blasting；
The polishing depth bounds of described polishing process is less than 0.1mm.
Alternatively, the amount of feeding of described polishing process is 0.05mm.
Alternatively, before described first feeding, take titanium target spindle, cut off titanium target spindle vertically to obtain some titanium targets；After cutting off described titanium target spindle, take described titanium target and weld together with backboard.
Compared with prior art, technical scheme has the advantage that
First, the amount of feeding of the first feeding process is less than or equal to 0.6mm, the amount of feeding less than the 0.9mm of prior art, and second the amount of feeding of feeding process less than the amount of feeding of the first feeding process, the active force of the sputtering surface acting on titanium target in the first feeding and the second feeding process is less, so the stressor layers distributed areas produced in sputtering surface and thickness also less.Considering the initial stage in target as sputter process, can first sputter some white tiles, the stressor layers that thickness is less in the process of sputtering white tiles can be sputtered, and forms the wafer thickness distributing homogeneity of wafer positive process substantially without the follow-up sputtering of impact.Wherein the relative wafer full wafer of white tiles, belongs to the granule having quality flaw and being eliminated.
Secondly, the amount of feeding of the second feeding process is less than the amount of feeding of the first feeding process, and its purpose is not only in that the generation reducing stressor layers, additionally it is possible to progressively remove the stressor layers that the first feeding process produces at sputtering surface.This reduce the thickness of stressor layers distributed areas and stressor layers in the sputtering surface of titanium target, improve wafer thickness distributing homogeneity.
Accompanying drawing explanation
Fig. 1 is the flow chart of the sputtering surface processing method of the titanium target of the specific embodiment of the invention；
Fig. 2 is the schematic diagram of the sputtering surface course of processing of the titanium target that the present invention is embodied as.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
The manufacturing process of sputtering titanium target substantially to experience: mixed material powder, mixed-powder carries out cold pressing treatment obtains titanium target blank, titanium target blank carry out vacuum heating-press sintering or hip treatment obtains titanium target spindle.Titanium target spindle is column, for obtaining the titanium target of desired thickness, in addition it is also necessary to titanium target spindle carries out cut-out and processes to obtain multi-disc titanium target.Afterwards, it is possible to also every titanium target and backboard are carried out machining, and every titanium target and backboard are welded together.Then, the sputtering surface of every titanium target being processed, the sputtering surface processing of titanium target refers to: by sputtering surface is carried out turning, it is thus achieved that the target thickness of titanium target.Wherein turning refers to and uses the lathe tool rotated to the sputtering surface of titanium target or to use the sputtering surface of the lathe tool titanium target to rotating to carry out machining, and the amount of feeding is the important parameter of turning process.The amount of feeding refers to that workpiece or lathe tool often rotate a circle or make a round trip, or when lathe tool often turns over a tooth, lathe tool is in the displacement of direction of feed motion.
With reference to Fig. 1, Fig. 2, the present embodiment provides the sputtering surface processing method of a kind of titanium target, and this sputtering surface processing method includes:
Performing step S1 and with reference to Fig. 2 (a), along titanium target 1 axial direction, the sputtering surface of titanium target 1 is carried out the first feeding, the range of feeds of the first feeding process is less than or equal to 0.6mm；
Perform step S2 and with reference to Fig. 2 (b), Fig. 2 (c), Fig. 2 (d), sputtering surface is carried out the second feeding at least one times, target thickness is reached to titanium target 1 thickness, the amount of feeding of each second feeding process is less than the amount of feeding of the first feeding process, and the second feeding process is additionally operable in the first feeding process of removing the stressor layers produced at sputtering surface.
First, the amount of feeding of the first feeding process is less than or equal to 0.6mm, the amount of feeding less than the 0.9mm of prior art, and second the amount of feeding of feeding process less than the amount of feeding of the first feeding process, the active force of the sputtering surface acting on titanium target 1 in the first feeding and the second feeding process is less, so the stressor layers region produced in sputtering surface and thickness also less.Considering the initial stage in target as sputter process, can first sputter some white tiles, the stressor layers that thickness is less in the process of sputtering white tiles can be sputtered, and forms the wafer thickness distributing homogeneity of wafer positive process substantially without the follow-up sputtering of impact.Wherein the relative wafer full wafer of white tiles, belongs to the granule having quality flaw and being eliminated.
Secondly, the amount of feeding of the second feeding process is less than the amount of feeding of the first feeding process, and its purpose is not only in that the generation reducing stressor layers, additionally it is possible to progressively remove the stressor layers that the first feeding process produces at sputtering surface.This reduce the thickness of stressor layers distributed areas and stressor layers in the sputtering surface of titanium target, improve wafer thickness distributing homogeneity.
Specifically, perform step S1 and with reference to Fig. 2, use the backboard in turning attachment clamping titanium target material assembly, then utilize lathe tool that the sputtering surface of titanium target 1 is carried out turnery processing.Owing to titanium target 1 is to be used as to sputter, purity requirement is higher, and the titanium target purity therefore selected is be more than or equal to 99.999%.The shape of titanium target can be provided in round according to actual needs, square or other symmetric shapes or asymmetrically shaped.
The gauge of titanium target 1 for add an allowance in design size, and arranging the purpose of allowance is that titanium target 1 provides well-to-do processing space to obtain satisfactory titanium target material assembly.Backboard is formed by machining so that its size meets application requirement, the pre-mating surface of backboard and titanium target carries out machining to necessary fineness, by backboard together with the surface soldered on titanium target Backward Sputtering surface, forms titanium target material assembly.
Specifically, titanium target and backboard are welded together by available soldering processes, and alternate manner certainly can also be adopted titanium target and backboard to be welded together.
The range of feeds of the first feeding process can be the arbitrary amount of feeding in 0.4mm～0.6mm.The amount of feeding of the first feeding process of the present embodiment is 0.5mm, not only can eliminate in titanium target spindle cutting-off process before, machining and welding process in stressor layers produced by the sputtering surface of titanium target, and the stressor layers thickness that produced new stressor layers region is also minimum, newly generated is also the thinnest.Due to titanium target matter soft (plasticity is stronger), if the amount of feeding of the first feeding process is less than 0.4mm, it may appear that viscous cutter phenomenon, causes titanium target as sputter surface irregularity, affect surface effect；If the amount of feeding of the first feeding process is more than 0.6mm, it is easy to produce more stressor layers region and thicker stressor layers.
With continued reference to Fig. 2, generally in feeding process, cooling medium can be added in the cutting fluid case of lathe or cutting liquid bath, so that the car 2 of turning process and titanium target 1 are carried out cooling and lubricating.In the present embodiment, cooling medium is alternatively arranged as the cutting fluid of machining, and cutting fluid effect in machining mainly has:
One, cooling effect, heat cutting produced by the convection current between cooling medium and the lathe tool 2 generated heat because of cutting, chip and titanium target 1 and vaporization is taken away from lathe tool 2 and titanium target 1, thus being effectively reduced cutting temperature, reduce the thermal deformation of titanium target 1 and lathe tool 2, keep lathe tool 2 hardness, improve machining accuracy and lathe tool 2 durability；
Two, lubrication, cooling medium lubrication in working angles, rake face and the chip of lathe tool can be reduced, friction between rear knife face and machined surface, forming portion is shared in the benefit synovial membrane, thus reducing cutting force, friction and power consumption, reduce lathe tool 2 and titanium target 1 to rub the surface temperature at position and tool wear, improve the machinability of titanium target；
Three, cleaning action, refer to cooling medium in titanium target 1 working angles, remove the chip and greasy dirt and sand grains that generate, it is prevented that the contamination on lathe and titanium target 1 surface, lathe tool, make the cutting edge of lathe tool keep sharp, cutting effect will not be affected.For oil base cutting fluid, viscosity is more low, and cleansing power is more strong, especially contains the cutting fluid of the Light ends such as kerosene, diesel oil, permeability and cleaning performance more good.Containing the water-base cutting fluid of surfactant, cleaning performance is better, because it can form adsorbed film from the teeth outwards, stoping particle and greasy filth etc. to stick on lathe tool, it can penetrate on the interface of particle and greasy filth adhesion simultaneously, and it is separated from interface, take away with cutting fluid, keep cutting fluid cleaning.
After the first feeding, it is also possible to be: the sputtering surface of titanium target 1 is carried out, to wash chip.
Performing step S2 and combine with reference to Fig. 2 (b), Fig. 2 (c), Fig. 2 (d), the sputtering surface of titanium target 1 carries out three the second feedings continuously, the range of feeds of each second feeding process is 0.25mm～0.35mm.Repeatedly the second feeding is for progressively removing the stressor layers that the first feeding process produces at sputtering surface, and the amount of feeding of the second feeding process is less, and produced stressor layers is also very thin.In other examples, it is possible to the target thickness reached according to titanium target 1 selects the number of times of the second feeding and the amount of feeding of each second feeding process.In the present embodiment, the amount of feeding of the second feeding process is 0.3mm.
Consider that the sputtering surface of titanium target is caused damage by turning process, therefore, after the second feeding, with reference to Fig. 2 (e), the sputtering surface of titanium target 1 need to be processed by shot blasting process, to eliminate the uneven of sputtering surface, improve fineness and the flatness of the sputtering surface of titanium target 1, the sputtering surface of titanium target 1 is brighter, more flat smooth.The polishing depth bounds of polishing process is less than 0.1mm, and the polishing degree of depth of the present embodiment is 0.05mm.The hardness being limited to glossing and titanium target 1 is harder, and the polishing degree of depth is substantially without more than 0.1mm.
Sputtering surface processing method through the titanium target of the present embodiment, it is possible to obtain the target with less stressor layers region and less stressor layers thickness.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (8)
1. the sputtering surface processing method of a titanium target, it is characterised in that including:
Described sputtering surface carries out first feeding, and the range of feeds of described first feeding process is less than or equal to 0.6mm；
Described sputtering surface being carried out the second feeding at least one times, reaches target thickness to titanium its thickness, the amount of feeding of described second feeding process is less than the amount of feeding of the first feeding process every time.
2. the sputtering surface processing method of titanium target as claimed in claim 1, it is characterised in that the range of feeds of described first feeding process is: 0.4mm～0.6mm；
The range of feeds of described second feeding process is: 0.25mm～0.35mm.
3. the sputtering surface processing method of titanium target as claimed in claim 2, it is characterised in that the amount of feeding of described first feeding process is 0.5mm, and the amount of feeding of described second feeding process is 0.3mm.
4. the sputtering surface processing method of titanium target as claimed in claim 3, it is characterised in that the number of times of described second feeding is 3 times.
5. the sputtering surface processing method of titanium target as claimed in claim 2, it is characterised in that after all second feedings, also include: described sputtering surface is processed by shot blasting.
6. the sputtering surface processing method of titanium target as claimed in claim 5, it is characterised in that use feeding technique, described sputtering surface is processed by shot blasting；
The polishing depth bounds of described polishing process is less than 0.1mm.
7. the sputtering surface processing method of titanium target as claimed in claim 6, it is characterised in that the amount of feeding of described polishing process is 0.05mm.
8. the sputtering surface processing method of titanium target as claimed in claim 1, it is characterised in that before described first feeding, take titanium target spindle, cuts off titanium target spindle vertically to obtain some titanium targets；After cutting off described titanium target spindle, take described titanium target and weld together with backboard.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410794803.9A CN105755435A (en) | 2014-12-18 | 2014-12-18 | A sputtering surface machining method for a titanium target material |
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| CN201410794803.9A CN105755435A (en) | 2014-12-18 | 2014-12-18 | A sputtering surface machining method for a titanium target material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106766869A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of new target furnace apparatus and target bonding method |
| CN111411333A (en) * | 2020-05-11 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Method for improving coating uniformity of target material |
| CN113001114A (en) * | 2021-03-01 | 2021-06-22 | 宁波江丰电子材料股份有限公司 | Turning method for sputtering surface of rotary target |
| CN113042974A (en) * | 2021-02-18 | 2021-06-29 | 宁波江丰电子材料股份有限公司 | Titanium target processing method, processed titanium target and application |
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| CN101613851A (en) * | 2009-07-27 | 2009-12-30 | 宁波江丰电子材料有限公司 | The working method of titanium target |
| CN203197702U (en) * | 2012-12-31 | 2013-09-18 | 宁波江丰电子材料有限公司 | Polishing device |
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2014
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Patent Citations (2)
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| CN101613851A (en) * | 2009-07-27 | 2009-12-30 | 宁波江丰电子材料有限公司 | The working method of titanium target |
| CN203197702U (en) * | 2012-12-31 | 2013-09-18 | 宁波江丰电子材料有限公司 | Polishing device |
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| 王文凯: "《数控铣加工技术》", 31 August 2011, 上海科技出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106766869A (en) * | 2017-01-04 | 2017-05-31 | 青岛蓝光晶科新材料有限公司 | A kind of new target furnace apparatus and target bonding method |
| CN111411333A (en) * | 2020-05-11 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Method for improving coating uniformity of target material |
| CN113042974A (en) * | 2021-02-18 | 2021-06-29 | 宁波江丰电子材料股份有限公司 | Titanium target processing method, processed titanium target and application |
| CN113001114A (en) * | 2021-03-01 | 2021-06-22 | 宁波江丰电子材料股份有限公司 | Turning method for sputtering surface of rotary target |
| CN113001114B (en) * | 2021-03-01 | 2023-12-29 | 宁波江丰电子材料股份有限公司 | Turning method of rotary target sputtering surface |
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Application publication date: 20160713 |