CN113042974A - Titanium target processing method, processed titanium target and application - Google Patents

Abstract

The invention provides a titanium target processing method, a processed titanium target and application, wherein the processing method comprises the steps of carrying out first turning on the titanium target by adopting a first cutter to obtain a rough-processed titanium target; performing second turning on the primarily treated titanium target by using a second cutter made of diamond to obtain a finely treated titanium target; and polishing the precisely processed titanium target material to obtain the processed titanium target material, wherein the processing method can reduce the thickness and the roughness of the stress layer on the surface of the titanium target material, and the processed titanium target material is applied to sputtering film formation, so that the service quality and the service life of the titanium target material in sputtering are improved, and the initial power consumption in the sputtering process is reduced.

Description

Titanium target processing method, processed titanium target and application

Technical Field

The invention relates to the technical field of targets, in particular to a titanium target processing method, a processed titanium target and application.

Background

The sputtering technology is one of the common processes in the field of semiconductor manufacturing, and with the increasing development of the sputtering technology, the sputtering target plays an increasingly important role in the sputtering technology, and the quality of the sputtering target directly influences the film forming quality after sputtering.

The sputtering target material has higher requirements than the traditional material, and the general requirements comprise size, flatness, purity, component content, density, grain size, defect control and the like; the higher or special requirements include surface roughness, resistance, grain size uniformity, composition and texture uniformity, foreign matter content and size, magnetic permeability, ultra-high density, ultra-fine grains, and the like. Sputtering targets are mainly used in electronics and information industries, such as integrated circuits, information storage, liquid crystal displays, laser memories, electronic controllers, and the like.

The titanium target material used in the existing semiconductor sputtering often has a stress layer remained on the surface after mechanical processing, the stress layer can affect the working condition of the initial stage of sputtering, and the problems of poor sputtering performance, such as electric arc and particles, and the like often occur in the initial stage of use.

CN102632447B discloses a method for processing the surface of a target, which comprises performing mechanical rough processing on the surface of the processed target; grinding and polishing the surface of the target by adopting mechanical grinding and polishing equipment, wherein the mechanical grinding and polishing equipment is provided with two parallel roll shafts capable of moving up and down in parallel, and the opening widths of the parallel roll shafts can be adjusted; the surface of the target material after grinding and polishing is washed by high-pressure deionized water, and the method uses mechanical grinding and polishing equipment to process the surface, so the operation process is complex.

CN105755435A discloses a method for processing a sputtering surface of a titanium target, which comprises the steps of carrying out first feeding on the sputtering surface, wherein the feeding amount in the first feeding process is less than or equal to 0.6 mm; and performing at least one second feeding on the sputtering surface until the thickness of the titanium target material reaches the target thickness, wherein the feeding amount of each second feeding process is less than that of the first feeding process, but the method comprises multiple times of feeding and has complex operation process.

CN104668883A discloses a method for processing a sputtering surface of a target assembly, which comprises: the target component is formed by welding a target and a back plate, and the sputtering surface of the target component is roughly machined; and performing finish machining on the sputtering surface of the rough machined target assembly, and performing polishing treatment on the sputtering surface of the finish machined target assembly. However, the method aims at tantalum or tantalum alloy targets, and does not relate to titanium targets.

Therefore, there is a need to develop a treatment method capable of improving the quality and service life of the titanium target material in sputtering.

Disclosure of Invention

In view of the problems in the prior art, the invention provides a titanium target processing method, a processed titanium target and an application thereof, wherein the processing method comprises the steps of sequentially carrying out first turning, second turning and polishing on the titanium target to obtain the processed titanium target, the processing method can reduce the thickness and the roughness of a stress layer on the surface of the titanium target, and the processed titanium target is applied to sputtering film forming equipment to improve the service quality and the service life of the titanium target in sputtering.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present invention provides a method for processing a titanium target, comprising:

(1) carrying out first turning on the titanium target material by adopting a first cutter to obtain a rough-processed titanium target material;

(2) performing second turning on the primarily treated titanium target material in the step (1) by using a second cutter made of diamond to obtain a finely treated titanium target material;

(3) and (3) polishing the finely processed titanium target material obtained in the step (2) to obtain the processed titanium target material.

According to the titanium target processing method provided by the invention, built-up edges are formed on the titanium target in the processing process, turning processing is influenced, and cutting processing is not facilitated, and the use of the titanium target is influenced by a common processing method.

The material of the first cutter is not limited, and any cutter material known to those skilled in the art can be adopted; the second cutter is made of diamond, and the diamond cutter has the advantages of extremely high hardness and wear resistance, low friction coefficient, high elastic modulus, high thermal conductivity, low thermal expansion coefficient and low affinity with nonferrous metal, and can accurately reduce the thickness of the stress layer of the titanium target.

The titanium target material is subjected to sputtering film-forming operation in IMP equipment.

Preferably, the hardness of the titanium target in the step (1) is 70 to 100HV, and may be, for example, 70HV, 73HV, 76HV, 79HV, 82HV, 85HV, 88HV, 91HV, 94HV, 97HV, or 70 HV.

Preferably, the included angle of the cutting edge of the first cutter is 70-80 °, for example, 70 °, 71 °, 72 °, 73 °, 74 °, 75 °, 76 °, 77 °, 78 °, 79 °, or 80 °.

Preferably, the primary relief angle of the first cutter is 10 to 15 °, and may be, for example, 10 °, 11 °, 12 °, 13 °, 14 °, or 15 °.

Preferably, the rotation speed of the first turning is 250-600 r/min, such as 250r/min, 300r/min, 350r/min, 400r/min, 450r/min, 500r/min, 550r/min or 600 r/min.

Preferably, the feeding amount of the first turning is 0.08-0.12 mm/r, such as 0.08mm/r, 0.09mm/r, 0.1mm/r, 0.11mm/r or 0.12 mm/r.

The feeding amount of the first turning is 0.08-0.12 mm/r, the flatness of the surface of the titanium target can be kept, the effect of the first turning is stabilized, and the effect of treating the titanium target, which is influenced by generation of built-up edges, is avoided during the first turning.

Preferably, the cutting depth of the first turning is 0.2-0.3 mm, and may be, for example, 0.2mm, 0.21mm, 0.22mm, 0.23mm, 0.24mm, 0.25mm, 0.26mm, 0.27mm, 0.28mm, 0.29mm, 0.3mm, or the like.

Preferably, the included angle of the cutting edge of the second cutter in the step (2) is 70-80 °, for example, 70 °, 71 °, 72 °, 73 °, 74 °, 75 °, 76 °, 77 °, 78 °, 79 °, or 80 °.

Preferably, the primary relief angle of the second tool is 10 to 15 °, and may be, for example, 10 °, 11 °, 12 °, 13 °, 14 °, or 15 °.

Preferably, the rotation speed of the second turning is 250-600 r/min, such as 250r/min, 300r/min, 350r/min, 400r/min, 450r/min, 500r/min, 550r/min or 600 r/min.

Preferably, the feeding amount of the second turning is 0.03-0.07 mm/r, such as 0.03mm/r, 0.04mm/r, 0.5mm/r, 0.06mm/r or 0.07 mm/r.

The feeding amount of the second turning is 0.03-0.07 mm/r, and the reduction of the thickness of the stress layer of the titanium target can be accurately controlled.

Preferably, the cutting depth of the second turning is 0.2-0.3 mm, and may be, for example, 0.2mm, 0.21mm, 0.22mm, 0.23mm, 0.24mm, 0.25mm, 0.26mm, 0.27mm, 0.28mm, 0.29mm, 0.3mm, or the like.

Preferably, the polishing treatment of step (3) comprises sand paper polishing.

Preferably, the surface roughness of the treated titanium target material is 0.15 to 0.25 μm, and may be, for example, 0.15 μm, 0.16 μm, 0.17 μm, 0.18 μm, 0.19 μm, 0.2 μm, 0.21 μm, 0.22 μm, 0.23 μm, 0.24 μm, or 0.25 μm.

As a preferred technical solution of the present invention, the processing method includes the steps of:

(1) carrying out first turning on a titanium target material by adopting a first cutter with a cutting edge having an included angle of 70-80 degrees and a main back angle of 10-15 degrees, wherein the rotating speed is 250-600 r/min, the feeding amount is 0.08-0.12 mm/r, and the cutting amount is 0.2-0.3 mm, so as to obtain a rough-processed titanium target material;

(2) performing second turning on the primarily treated titanium target material in the step (1) by using a second cutter which is made of diamond, has an included angle of a cutting edge of 70-80 degrees and a main relief angle of 10-15 degrees, wherein the rotating speed is 250-600 r/min, the feeding amount is 0.03-0.07 mm/r, and the cutting depth is 0.2-0.3 mm, so as to obtain a precisely treated titanium target material;

(3) and (3) carrying out sand paper polishing on the finely processed titanium target obtained in the step (2), wherein the surface roughness of the processed titanium target is 0.15-0.25 mu m.

In a second aspect, the present invention provides a treated titanium target material treated according to the method for treating a titanium target material of the first aspect.

According to the titanium target processing method, the thickness and the roughness of the stress layer on the surface of the titanium target can be reduced, so that the thickness and the roughness of the stress layer of the processed titanium target are smaller.

In a third aspect, the present invention provides a use of the treated titanium target material according to the second aspect in sputter film formation.

The processed titanium target material provided by the invention is applied to sputtering film formation, the use quality and the service life of the titanium target material in the sputtering film formation are improved, and the power consumption of the processed titanium target material in the initial stage of the sputtering film formation can be reduced.

Compared with the prior art, the invention has at least the following beneficial effects:

(1) according to the processing method of the titanium target, the thickness of a stress layer on the surface of the titanium target caused by machining can be reduced, and the roughness of the surface of the titanium target is reduced;

(2) the treated titanium target material provided by the invention can improve the use quality and service life of the titanium target material in sputtering film formation, stabilize the initial use state of the titanium target material, reduce power consumption, wherein the initial power consumption is less than or equal to 35 kW.h, and the service life is more than or equal to 2071 kW.h.

Drawings

FIG. 1 is a process flow of example 1 of the present invention.

FIG. 2 shows the treated titanium target of example 1 of the present invention.

FIG. 3 is a process flow of comparative example 1 of the present invention.

FIG. 4 is a treated titanium target of comparative example 1 of the present invention.

In the figure: 1-stress layer.

Detailed Description

The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.

The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.

First, an embodiment

Example 1

The embodiment provides a processing method of a titanium target, which includes the following steps:

(1) carrying out first turning on the titanium target material by adopting a first cutter which is made of stainless steel, has a cutting edge with an included angle of 75 degrees and a main back angle of 12 degrees, wherein the rotating speed is 450r/min, the feeding amount is 0.1mm/r, and the cutting depth is 0.25mm, so as to obtain a rough-processed titanium target material;

(2) performing second turning on the primary-treated titanium target material in the step (1) by adopting a second cutter which is made of diamond, has a cutting edge with an included angle of 75 degrees and a main back angle of 12 degrees, wherein the rotating speed is 450r/min, the feeding amount is 0.05mm/r, and the cutting amount is 0.25mm, so as to obtain a fine-treated titanium target material;

(3) and (3) carrying out sand paper polishing on the finely processed titanium target obtained in the step (2), wherein the surface roughness of the processed titanium target is 0.2 mu m.

Fig. 1 is a processing flow of this embodiment, and the titanium target material is subjected to first turning, second turning and polishing in sequence to obtain the processed titanium target material of fig. 2, and it can be seen that the thickness of the stress layer 1 is small.

Example 2

The embodiment provides a processing method of a titanium target, which includes the following steps:

(1) carrying out first turning on the titanium target material by adopting a first cutter which is made of stainless steel, has a cutting edge with an included angle of 70 degrees and a main back angle of 15 degrees, wherein the rotating speed is 250r/min, the feeding amount is 0.08mm/r, and the cutting amount is 0.2mm, so as to obtain a rough-processed titanium target material;

(2) performing second turning on the primary-treated titanium target material in the step (1) by adopting a second cutter which is made of diamond, has an included angle of a cutting edge of 70 degrees and a main relief angle of 15 degrees, wherein the rotating speed is 250r/min, the feeding amount is 0.03mm/r, and the cutting amount is 0.2mm, so as to obtain a fine-treated titanium target material;

(3) and (3) carrying out sand paper polishing on the finely processed titanium target obtained in the step (2), wherein the surface roughness of the processed titanium target is 0.15 mu m.

Example 3

The embodiment provides a processing method of a titanium target, which includes the following steps:

(1) carrying out first turning on the titanium target material by adopting a first cutter which is made of stainless steel, has a cutting edge with an included angle of 80 degrees and a main back angle of 10 degrees, wherein the rotating speed is 600r/min, the feeding amount is 0.12mm/r, and the cutting depth is 0.3mm, so as to obtain a rough-processed titanium target material;

(2) performing second turning on the primarily treated titanium target material in the step (1) by adopting a second cutter which is made of diamond, has an included angle of a cutting edge of 80 degrees and a main back angle of 10 degrees, wherein the rotating speed is 600r/min, the feeding amount is 0.07mm/r, and the cutting amount is 0.3mm, so as to obtain a precisely treated titanium target material;

(3) and (3) carrying out sand paper polishing on the finely processed titanium target in the step (2), wherein the surface roughness of the processed titanium target is 0.25 mu m.

Example 4

This example provides a method for treating a titanium target, which is different from example 1 only in that the feed amount in step (1) is controlled to 0.05mm/r, and the rest is the same as example 1.

Example 5

This example provides a method for treating a titanium target, which is different from example 1 only in that the feed amount in step (1) is controlled to 0.15mm/r, and the rest is the same as example 1.

Example 6

This example provides a method for treating a titanium target, which is different from example 1 only in that the feed amount in step (2) is controlled to 0.02mm/r, and the rest is the same as example 1.

Example 7

This example provides a method for treating a titanium target, which is different from example 1 only in that the feed rate in step (2) is controlled to 0.08mm/r, and the rest is the same as example 1.

Second, comparative example

Comparative example 1

This comparative example provides a method for treating a titanium target, which differs from example 1 only in that step (2) is not performed, and is otherwise the same as example 1.

Fig. 3 is a processing flow of the comparative example, and the titanium target material is subjected to the first turning and polishing treatment in sequence to obtain the processed titanium target material of fig. 4, and it can be seen that the thickness of the stress layer 1 is relatively large.

Comparative example 2

The comparative example provides a titanium target processing method, which is different from the processing method of example 1 only in that the material of the second cutter in the step (2) is stainless steel, and the rest is the same as that of example 1.

Comparative example 3

This comparative example provides a method for treating a titanium target, which differs from example 1 only in that step (3) is not performed, and is otherwise the same as example 1.

Third, test and results

The method for testing the initial power consumption and the service life of the treated titanium target material comprises the following steps: sputtering film formation was performed in an AMAT 300mm Endura apparatus.

The method for calculating the initial power consumption of the processed titanium target comprises the following steps: the time when the treated titanium target material starts to work, the film forming power, and the initial power consumption specifically represent the energy consumed in the sputtering film forming process before the titanium target material starts to work.

The method for calculating the service life of the treated titanium target material comprises the following steps: the film forming power of the treated titanium target material is the total working time of the titanium target material.

The test results of the above examples and comparative examples are shown in table 1.

TABLE 1

	Initial power consumption (kW. h)	Service life (kW. h)
			Example 1	20	2300
Example 2	20	2240
			Example 3	20	2210
Example 4	30	2189
			Example 5	32	2071
Example 6	35	2111
			Example 7	28	2098
Comparative example 1	140	1899
			Comparative example 2	150	1945
Comparative example 3	140	2017

From table 1, the following points can be seen:

(1) according to the titanium target processing method provided by the invention, the titanium target is subjected to the first turning, the second turning and the polishing in sequence, so that the stress layer and the roughness of the surface of the titanium target can be reduced, the service quality and the service life of the titanium target in sputtering are improved and the initial power consumption in the sputtering process is reduced when the titanium target is applied to sputtering film formation, specifically, the initial power consumption of the titanium target processed in the embodiments 1-7 is less than or equal to 35 kW.h, the service life is more than or equal to 2071 kW.h, the initial power consumption of the titanium target processed under the optimal condition is less than or equal to 20 kW.h, and the service life is more than or equal to 2210.h;

(2) by combining the embodiment 1 and the embodiments 4 to 5, it can be seen that the feeding amount in the step (1) of the embodiment 1 is controlled to be 0.1mm/r, compared with the feeding amounts in the step (1) of the embodiments 4 to 5 which are respectively controlled to be 0.05mm/r and 0.15mm/r, the initial power consumption of the titanium target material after being processed in the embodiment 1 is 20kW · h, the service life is 2300kW · h, the initial power consumption of the titanium target material after being processed in the embodiments 4 to 5 is respectively 30kW · h and 32kW · h, and the service life is 2189kW · h and 2071kW · h, and thus the invention can control the feeding amount in the step (1) within a certain range, further reduce the initial power consumption of the titanium target material, and further prolong the service life of the titanium target material;

(3) as can be seen by combining the examples 1 and 6 to 7, in the example 1, the feeding amount in the step (2) is controlled to be 0.05mm/r, compared with the feeding amounts in the steps (2) of the examples 6 to 7, which are respectively controlled to be 0.02mm/r and 0.08mm/r, the initial power consumption of the titanium target material after being processed in the example 1 is 20kW · h, the service life is 2300kW · h, the initial power consumption of the titanium target material after being processed in the examples 6 to 7 is 35kW · h and 28kW · h, and the service life is 2111kW · h and 2098kW · h, respectively, and thus, the invention can control the feeding amount in the step (2) within a certain range, further reduce the initial power consumption of the titanium target material, and further prolong the service life of the titanium target material;

(4) by combining the example 1 and the comparative example 1, the second turning in the step (2) is performed in the example 1, and compared with the second turning without the step (2) in the comparative example 1, the initial power consumption of the titanium target material after being treated in the example 1 is 20kW · h, the service life is 2300kW · h, the initial power consumption of the titanium target material after being treated in the comparative example 1 is 140kW · h, and the service life is 1899kW · h, so that the second turning in the step (2) performed in the present invention can reduce the initial power consumption of the titanium target material and prolong the service life of the titanium target material;

(5) by combining the example 1 and the comparative example 2, the material of the second cutter in the step (2) of the example 1 is diamond, compared with the material of the second cutter in the step (2) of the comparative example 2, the initial power consumption of the titanium target material treated in the example 1 is 20kW · h, the service life is 2300kW · h, the initial power consumption of the titanium target material treated in the comparative example 2 is 150kW · h, and the service life is 1945kW · h, so that the material of the second cutter in the step (2) of the invention is diamond, which can reduce the initial power consumption of the titanium target material and prolong the service life of the titanium target material;

(6) by combining example 1 and comparative example 3, it can be seen that the initial power consumption of the titanium target material after the treatment in example 1 is 20kW · h and the service life is 2300kW · h, and the initial power consumption of the titanium target material after the treatment in comparative example 3 is 140kW · h and the service life is 2017kW · h, compared to the case that the step (3) polishing treatment is not performed in comparative example 3, when the step (3) polishing treatment is performed in example 1, it can be seen that the step (3) polishing treatment performed in the present invention can reduce the initial power consumption of the titanium target material and prolong the service life of the titanium target material.

In conclusion, according to the titanium target processing method provided by the invention, the titanium target is subjected to the first turning, the second turning and the polishing in sequence, and the processed titanium target is applied to the sputtering film formation, so that the service quality and the service life of the titanium target in the sputtering film formation can be improved, the initial power consumption in the sputtering film formation is reduced, the initial power consumption is less than or equal to 35 kW.h, the service life is more than or equal to 2071 kW.h, the initial power consumption of the processed titanium target is less than or equal to 20 kW.h and the service life is more than or equal to 2210 kW.h under the optimal conditions.

The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims (10)

1. A processing method of a titanium target is characterized by comprising the following steps:

(1) carrying out first turning on the titanium target material by adopting a first cutter to obtain a rough-processed titanium target material;

(2) performing second turning on the primarily treated titanium target material in the step (1) by using a second cutter made of diamond to obtain a finely treated titanium target material;

(3) and (3) polishing the finely processed titanium target material obtained in the step (2) to obtain the processed titanium target material.

2. The treatment method according to claim 1, wherein the hardness of the titanium target in the step (1) is 70 to 100 HV;

preferably, the included angle of the cutting edge of the first cutter is 70-80 degrees.

3. The process according to claim 1 or 2, wherein the primary clearance angle of the first tool is 10 to 15 °.

4. The process according to any one of claims 1 to 3, wherein the first turning is performed at a speed of 250 to 600 r/min;

preferably, the feeding amount of the first turning is 0.08-0.12 mm/r;

preferably, the cutting depth of the first turning is 0.2-0.3 mm.

5. The process according to any one of claims 1 to 4, wherein the included angle of the cutting edge of the second cutter in the step (2) is 70 to 80 °;

preferably, the primary relief angle of the second cutter is 10-15 °.

6. The process according to any one of claims 1 to 5, wherein the second turning is carried out at a speed of 250 to 600 r/min;

preferably, the feeding amount of the second turning is 0.03-0.07 mm/r;

preferably, the cutting depth of the second turning is 0.2-0.3 mm.

7. The method according to any one of claims 1 to 6, wherein the polishing treatment of step (3) comprises sand paper polishing;

preferably, the surface roughness of the treated titanium target is 0.15-0.25 μm.

8. The treatment method according to any one of claims 1 to 7, characterized in that it comprises the following steps:

(1) carrying out first turning on a titanium target material by adopting a first cutter with a cutting edge having an included angle of 70-80 degrees and a main back angle of 10-15 degrees, wherein the rotating speed is 250-600 r/min, the feeding amount is 0.08-0.12 mm/r, and the cutting amount is 0.2-0.3 mm, so as to obtain a rough-processed titanium target material;

(2) performing second turning on the primarily treated titanium target material in the step (1) by using a second cutter which is made of diamond, has an included angle of a cutting edge of 70-80 degrees and a main relief angle of 10-15 degrees, wherein the rotating speed is 250-600 r/min, the feeding amount is 0.03-0.07 mm/r, and the cutting depth is 0.2-0.3 mm, so as to obtain a precisely treated titanium target material;

(3) and (3) carrying out sand paper polishing on the finely processed titanium target obtained in the step (2), wherein the surface roughness of the processed titanium target is 0.15-0.25 mu m.

9. A treated titanium target material, which is obtained by treating the titanium target material according to the treatment method for a titanium target material according to any one of claims 1 to 8.

10. Use of the treated titanium target according to claim 9 in sputter film formation.

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