CN106766869A - A kind of new target furnace apparatus and target bonding method - Google Patents

A kind of new target furnace apparatus and target bonding method Download PDF

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Publication number
CN106766869A
CN106766869A CN201710004399.4A CN201710004399A CN106766869A CN 106766869 A CN106766869 A CN 106766869A CN 201710004399 A CN201710004399 A CN 201710004399A CN 106766869 A CN106766869 A CN 106766869A
Authority
CN
China
Prior art keywords
target
base station
heater
heating base
furnace apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710004399.4A
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Chinese (zh)
Inventor
张磊
顾正
张晓峰
郭校亮
陈良杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Blue Light New Materials Co Ltd
Original Assignee
Qingdao Blue Light New Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Blue Light New Materials Co Ltd filed Critical Qingdao Blue Light New Materials Co Ltd
Priority to CN201710004399.4A priority Critical patent/CN106766869A/en
Publication of CN106766869A publication Critical patent/CN106766869A/en
Withdrawn legal-status Critical Current

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00Supports, screens, or the like for the charge within the furnace

Abstract

A kind of new target furnace apparatus, belong to target bonding techniques field.The side of the equipment body of heater sets fire door, heating base station is set in body of heater, the heater and temperature monitor for temperature control are provided with heating base station, it is connected to place the target material substrate of target on heating base station, target material substrate is arranged above increased pressure board, hydraulic pump of the upper end connection of increased pressure board outside body of heater, furnace interior is connected with external vavuum pump.Manual procedures of the present invention is simple, and target bonding efficiency is improved;By the area and indium pellet quality that calculate welding, it can be ensured that the utilization rate of indium material is more than 98%;Vacuumizing can effectively reduce air and vapor in the middle of target and substrate, it can be ensured that the area of welding is more than 97%;Stress control can be effectively increased the adhesion between target and substrate, it is ensured that the target in later stage sputter procedure occurs without the problem of coming off;The qualification rate of experienced operator's target bonding reaches 100%.

Description

A kind of new target furnace apparatus and target bonding method
Technical field
The invention belongs to target bonding techniques field, more particularly to a kind of new target furnace apparatus.
Background technology
The bonding equipment of target is the pressurization screw rod composition by heating tape, disclosure satisfy that the demand in market, but technics comparing It is coarse, easily there is bonding hole, risk can be brought to the use of subsequent product.
Furthermore, it desired to common target generally uses indium pellet welding to reduce manufacturing cost.But, due to the fusing point of indium It is low, if temperature control is too high in manufacturing process, the liquid pressure-bearing of indium can be made to be flowed out along gap.Therefore, how by temperature and Stress control is to solve the problems, such as that sintering qualification rate is low, later stage application risk it is high be target bonding method core technology.
The content of the invention
The purpose of the present invention is to overcome above the deficiencies in the prior art, there is provided a kind of simple to operate, sintering qualification rate is high New target furnace apparatus.It is a further object of the present invention to provide a kind of method for carrying out target bonding using the target stove.
The technical scheme that is used to achieve the above object of the present invention is:A kind of new target furnace apparatus, it is characterised in that: The side of body of heater is set and set in fire door, body of heater heating base station, and the heater and temperature for temperature control are provided with heating base station Detector, be connected to place the target material substrate of target on heating base station, target material substrate is arranged above increased pressure board, pressurization Hydraulic pump of the upper end connection of plate outside body of heater, furnace interior is connected with external vavuum pump.
, with width respectively not less than the length and width of target material substrate, the material of increased pressure board is not for for the length of the increased pressure board One or more combination in rust steel, aluminium, polytetrafluoroethylene (PTFE), copper.
Pressure gauge is connected on the hydraulic pump.
It is bolt connection between the heating base station and target material substrate
The operating temperature of the heating base station is 150~160 DEG C.
The operating pressure of the vavuum pump is 0.5~100Pa.
One kind carries out target bonding method using new target furnace apparatus, it is characterised in that:Specifically include following steps:
1) the first installation mold in target material substrate, and be fixed;
2) indium pellet is positioned in mould and is uniformly paved;
3) target is positioned on indium pellet, and is adjacent to mould, it is fixed, it is ensured that position will not be produced during temperature-pressure Move;
4) move down increased pressure board using hydraulic pump, it is ensured that increased pressure board is adjacent to locking with target, close fire door;
5) vavuum pump, the vacuum chamber operating pressure of set device are opened;
6) setup pressure value, makes the pressure between target material substrate and target maintain certain value all the time;Open and rise temperature function, Heating base station is set to be warming up to certain value;
7) after temperature stabilization reaches a period of time, power supply, the pressure of removal increased pressure board are closed;
After after temperature drop to certain value, breaking vacuum opens fire door, and the target that taking-up is welded is tested.
The step 5) in vacuum chamber operating pressure be 0.5~100Pa.
The step 6) in pressure between target material substrate (4) and target (5) maintain 0.5~3MPa all the time, heat base Platform (3) is warming up to 150~160 DEG C.
The step 7) in maintain time of temperature stabilization be 0.3~0.6H, the critical-temperature of breaking vacuum for 110~ 130℃。
Manual procedures of the present invention is simple, and target bonding efficiency is improved;By calculating the area and indium pellet quality of welding, May insure the utilization rate of indium material more than 98%;The air and water that vacuumizing can effectively be reduced in the middle of target and substrate steam Gas, it can be ensured that the area of welding is more than 97%;Stress control can be effectively increased the adhesion between target and substrate, protect Target in card later stage sputter procedure occurs without the problem of coming off;The qualification rate of experienced operator's target bonding reaches 100%.
Brief description of the drawings
Fig. 1 is a kind of structural representation of new target furnace apparatus.
In figure:1st, body of heater, 2, fire door, 3, heating base station, 4, target material substrate, 5, target, 6, increased pressure board, 7, vavuum pump, 8, Hydraulic pump, 9, pressure gauge.
Specific embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but invention is not limited to specific embodiment.
Embodiment 1
A kind of new target furnace apparatus as shown in Figure 1, the side of body of heater 1 sets and set in fire door 2, body of heater 1 heating base Platform 3, is provided with the heater and temperature monitor for temperature control in heating base station 3, bolt connection is used to place on heating base station 3 The target material substrate 4 of target 5, the increased pressure board 6 for being arranged above stainless steel of target material substrate 4, length and the width of increased pressure board 6 Respectively not less than the length and width of target material substrate 4, the upper end connection of increased pressure board 6 is located at the hydraulic pump 8 outside body of heater 1, hydraulic pressure to degree Pressure gauge 9 is connected on pump 8, is connected with external vavuum pump 7 inside body of heater 1.
Embodiment 2
A kind of method that new target furnace apparatus using described in embodiment 1 carry out target bonding:Specifically include following Step:
1) the first installation mold in target material substrate 4, and be fixed;
2) indium pellet is positioned in mould and is uniformly paved;
3) target 5 is positioned on indium pellet, and is adjacent to mould, it is fixed, it is ensured that will not to be produced during temperature-pressure Displacement;
4) move down increased pressure board 6 using hydraulic pump 8, it is ensured that increased pressure board 6 is adjacent to locking with target 5, close fire door 2;
5) vavuum pump 7 is opened, the vacuum chamber of equipment is evacuated to 10Pa;
6) setup pressure value, makes the pressure between target material substrate 4 and target 5 maintain 2MPa or so all the time;Open and heat up Function, makes heating base station 3 be warming up to 156 DEG C;
7) after temperature stabilization times reach 0.5H, power supply, the pressure of removal increased pressure board 6 are closed;
8) after temperature drop to after 130 DEG C, breaking vacuum opens fire door 2, and the target that taking-up is welded is tested.
Embodiment 3
The Each part of a kind of new target furnace apparatus described in the present embodiment is in the same manner as in Example 1, different Technical parameter is:The material of increased pressure board 6 is polytetrafluoroethylene (PTFE).
Embodiment 4
The present embodiment is the method for carrying out target bonding using a kind of new target furnace apparatus described in embodiment 3, tool Body step is in the same manner as in Example 2, and different technical parameters are:Step 5) in vacuum chamber operating pressure be 0.5Pa;Step 6) pressure between target material substrate 4 and target 5 maintains 0.5MPa all the time, and heating base station 3 is warming up to 150 DEG C;The step 7) time that temperature stabilization is maintained in is 0.3H, and the critical-temperature of breaking vacuum is 110 DEG C.
Embodiment 5
The Each part of a kind of new target furnace apparatus described in the present embodiment is in the same manner as in Example 1, different Technical parameter is:The material of increased pressure board 6 is albronze.
Embodiment 6
The present embodiment is the method for carrying out target bonding using a kind of new target furnace apparatus described in embodiment 5, tool Body step is in the same manner as in Example 2, and different technical parameters are:Step 5) in vacuum chamber operating pressure be 100Pa;Step 6) pressure between target material substrate 4 and target 5 maintains 3MPa all the time, and heating base station 3 is warming up to 160 DEG C;The step 7) The time of middle maintenance temperature stabilization is 0.6H, and the critical-temperature of breaking vacuum is 120 DEG C.
General principle of the invention and principal character has been shown and described above, those skilled in the art should be recognized that this Invention is not restricted to the described embodiments, the above embodiments and specification description merely illustrate the principles of the invention, not On the premise of departing from spirit and scope of the invention, the present invention has various changes and modifications, and these changes and improvements both fall within this In the claimed scope of invention, the claimed scope of the invention is by appending claims and equivalent thereof.

Claims (10)

1. a kind of new target furnace apparatus, it is characterised in that:The side of body of heater (1) sets to be set in fire door (2), body of heater (1) and adds Hot radical platform (3), is provided with the heater and temperature monitor for temperature control in heating base station (3), connected in heating base station (3) and used In the target material substrate (4) for placing target (5), target material substrate (4) is arranged above increased pressure board (6), the upper end of increased pressure board (6) Connection is located inside body of heater (1) hydraulic pump (8) outward, body of heater (1) and is connected with external vavuum pump (7).
2. a kind of new target furnace apparatus according to claim 1, it is characterised in that:The length of the increased pressure board (6) with Width respectively not less than the length and width of target material substrate (4), the material of increased pressure board (6) is stainless steel, aluminium, polytetrafluoroethylene (PTFE), One or more combination in copper.
3. a kind of new target furnace apparatus according to claim 1, it is characterised in that:Pressure is connected on the hydraulic pump (8) Power table (9).
4. a kind of new target furnace apparatus according to claim 1, it is characterised in that:Heating base station (3) and target It is bolt connection between substrate (4).
5. a kind of new target furnace apparatus according to claim 1, it is characterised in that:The work of heating base station (3) Temperature is 150~160 DEG C.
6. a kind of new target furnace apparatus according to claim 1, it is characterised in that:The work pressure of the vavuum pump (7) It is by force 0.5~100Pa.
7. target bonding method is carried out according to claim 1-6 any described a kind of new target furnace apparatus, it is characterised in that: Specifically include following steps:
1) the first installation mold in target material substrate (4), and be fixed;
2) indium pellet is positioned in mould and is uniformly paved;
3) target (5) is positioned on indium pellet, and is adjacent to mould, it is fixed, it is ensured that position will not be produced during temperature-pressure Move;
4) move down increased pressure board (6) using hydraulic pump (8), it is ensured that increased pressure board (6) is adjacent to locking with target (5), close fire door (2);
5) vavuum pump (7), the vacuum chamber operating pressure of set device are opened;
6) setup pressure value, makes the pressure between target material substrate (4) and target (5) maintain certain value all the time;Open intensification work( Can, heating base station (3) is warming up to certain value;
7) after temperature stabilization reaches a period of time, power supply, the pressure of removal increased pressure board (6) are closed;
After after temperature drop to certain value, breaking vacuum opens fire door (2), and the target that taking-up is welded is tested.
8. a kind of target bonding method according to claim 7, it is characterised in that:The step 5) in vacuum chamber work Pressure is 0.5~100Pa.
9. a kind of target bonding method according to claim 7, it is characterised in that:The step 6) in target material substrate (4) 0.5~3MPa is maintained all the time with the pressure between target (5), and heating base station (3) is warming up to 150~160 DEG C.
10. a kind of target bonding method according to claim 7, it is characterised in that:The step 7) in maintain temperature it is steady The fixed time is 0.3~0.6H, and the critical-temperature of breaking vacuum is 110~130 DEG C.
CN201710004399.4A 2017-01-04 2017-01-04 A kind of new target furnace apparatus and target bonding method Withdrawn CN106766869A (en)

Priority Applications (1)

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CN201710004399.4A CN106766869A (en) 2017-01-04 2017-01-04 A kind of new target furnace apparatus and target bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710004399.4A CN106766869A (en) 2017-01-04 2017-01-04 A kind of new target furnace apparatus and target bonding method

Publications (1)

Publication Number Publication Date
CN106766869A true CN106766869A (en) 2017-05-31

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108860802A (en) * 2018-04-27 2018-11-23 深圳市和拓创新科技有限公司 A kind of full-automatic hot-pressing indium envelope equipment
CN110408899A (en) * 2019-08-21 2019-11-05 东莞市欧莱溅射靶材有限公司 A kind of binding method of plane ITO target

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161401A (en) * 1997-08-21 1999-03-05 Matsushita Electric Ind Co Ltd Sputtering and device therefor
CN103737140A (en) * 2013-12-30 2014-04-23 江西沃格光电股份有限公司 Method for binding ITO target to copper back plate
CN203741407U (en) * 2014-02-11 2014-07-30 广州市尤特新材料有限公司 Magnetron sputtering rotating target
CN105755435A (en) * 2014-12-18 2016-07-13 宁波江丰电子材料股份有限公司 A sputtering surface machining method for a titanium target material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161401A (en) * 1997-08-21 1999-03-05 Matsushita Electric Ind Co Ltd Sputtering and device therefor
CN103737140A (en) * 2013-12-30 2014-04-23 江西沃格光电股份有限公司 Method for binding ITO target to copper back plate
CN203741407U (en) * 2014-02-11 2014-07-30 广州市尤特新材料有限公司 Magnetron sputtering rotating target
CN105755435A (en) * 2014-12-18 2016-07-13 宁波江丰电子材料股份有限公司 A sputtering surface machining method for a titanium target material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
汉斯•琼彻•格雷瑟: "《大面积玻璃镀膜》", 30 April 2006, 上海交通大学出版社 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108860802A (en) * 2018-04-27 2018-11-23 深圳市和拓创新科技有限公司 A kind of full-automatic hot-pressing indium envelope equipment
CN110408899A (en) * 2019-08-21 2019-11-05 东莞市欧莱溅射靶材有限公司 A kind of binding method of plane ITO target

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Application publication date: 20170531