CN110408899A - A kind of binding method of plane ITO target - Google Patents
A kind of binding method of plane ITO target Download PDFInfo
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- CN110408899A CN110408899A CN201910774101.7A CN201910774101A CN110408899A CN 110408899 A CN110408899 A CN 110408899A CN 201910774101 A CN201910774101 A CN 201910774101A CN 110408899 A CN110408899 A CN 110408899A
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- binding
- ito target
- target
- ito
- copper backboard
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention discloses a kind of binding methods of plane ITO target, including a, preparation process, b, heating stepses, c, binding pretreatment, d, binding step and e, weight bearing step, target drone rate of splitting is effectively reduced in binding method of the invention, and welded rate is high, high production efficiency, the quality of production are good.
Description
Technical field
The present invention relates to rotary targets to bind pretreated technical field, more particularly, to a kind of binding of plane ITO target
Method.
Background technique
ITO is a kind of N-type oxide semiconductor-tin indium oxide, ito thin film, that is, indium tin oxide transparent conductive semiconductor
Film.
ITO target is the raw material for producing ito thin film, and it is thin that the binding quality of ITO flat target or rotary target directly affects ITO
Conduction and heating conduction when film produces.The conduction and bad directly affect of heating conduction of ITO flat target or rotary target are produced
The quality of the ito thin film come.
Since the material of ITO target is partially brittle, in actual production due to cold and hot temperature change dramatically generates stress build up
It is easily broken, binding welded rate is low, and production efficiency is low, or generates in ITO target because of temperature change in process of production residual
Residue stress is easy to happen rupture or takes off and tie up, the ITO target quality of production is poor when actually using plated film.In the actual production process
Important is shown especially to temperature control.
Summary of the invention
In view of the deficienciess of the prior art, having the object of the present invention is to provide a kind of binding method of plane ITO target
Effect reduces target drone rate of splitting, and welded rate is high, high production efficiency, and the quality of production is good.
To achieve the goals above, the technical scheme adopted by the invention is that: a kind of binding method of plane ITO target,
Planar targets select ITO target, and backboard selects copper backboard, and binding solder selects indium, comprising the following steps: a, preparation process, it will
Copper backboard is pressed in heating platform, and ITO target is placed in heating platform, including following sub-step, a1, passes through compacting part for copper
Backboard compression adheres on heating platform, to prevent the deformation of copper backboard vertical direction during heating；Under a2, ITO target
Surface adheres on heating platform, is covered with heat-preservation cotton in the upper surface of ITO target；
Copper backboard and ITO target are warming up to 90 DEG C with the heating rate of 1.2-1.6 DEG C/min by heating stepses, then with
The heating rate of 1.6-1.9 DEG C/min is warming up to 200 DEG C from 90 DEG C, stops heating；
The temperature of binding pretreatment, ITO target and copper backboard ties up ITO target and copper backboard between 190-200 DEG C
Determine face and carries out ultrasonic coated with indium, including following sub-step using ultrasonic coating unit respectively, c1, in the liquid storage of ultrasonic coating unit
The indium of molten is added in case, indium is supplied in ultrasonic brush head according to the liquid feed speed of setting by liquid reserve tank, and ultrasonic brush head is pressed
It is at the uniform velocity moved according to 90-100mm/ minutes speed in the binding face of copper backboard, until the binding face of copper backboard, shape is completely covered in indium
At one with a thickness of 0.05-0.1mm backboard metalization layer, complete the pretreatment of copper backboard；C2, it will be melted by ultrasonic coating unit
The indium for melting shape flows to ultrasonic brush head according to the feed speed of setting, and ultrasonic brush head is according to 90-100mm/ minutes speed in ITO
The binding face of target is at the uniform velocity moved, until the binding face of ITO target is completely covered in indium, forms one with a thickness of the target of 0.05-0.1mm
Material metalization layer completes the pretreatment of ITO target；
Step is bound, by the binding of ITO target facing towards the binding face of copper backboard, the binding face of ITO target and copper backboard
Binding face between be provided with set distance formed one binding gap, the height for binding gap is set in 0.3-0.5mm, at this
The indium that molten is filled in gap is bound, the space of the filling indium is binding layer, to form the binding layer of 0.3-0.5mm thickness,
Including following sub-step, step d1, is put down, range line component is put into the upper surface of copper backboard, to ensure ITO target and copper backboard
Between the thickness of binding layer that is formed, the indium for being enough to fill the molten of full binding layer is poured into the upper surface of copper backboard, by ITO
The binding of target forms a binding facing towards the binding face of copper backboard, between binding face and the binding face of copper backboard of ITO target
Angle, the angle are set in 30 ° -60 °, and ITO target is at the uniform velocity close to the binding face paste of copper backboard, until the binding face of ITO target
With the binding face keeping parallelism of copper backboard, stomata step d2, is gone, ITO target is relative to the flat-pushing movement of copper backboard, ITO target and copper
The binding of backboard is in face of neat, formation ITO flat target；
Weight bearing step, is provided with weight bearing component in the upper surface of ITO flat target, makes ITO flat target by gravity, make
ITO flat target and copper backboard remain impaction state, in the surface cover of ITO flat target in binding solder indium solidification process
Upper heat-preservation cotton solidifies the solder indium of binding layer in the state of compression, completes the binding of ITO flat target.
In further technical solution, in the a2 step, the material of the heat-preservation cotton is Furtulon high temperature cloth, heat-preservation cotton
Thickness be arranged in 0.4mm-0.7mm.
In further technical solution, in the a1 step, the length side of the copper backboard is arranged in the compacting part
To medium position, cushion block is placed between compacting part and copper backboard.
In further technical solution, in the a1 step, the compacting part is for preventing the copper backboard from heating
It deforms in the process, compacting part selects briquetting, is provided with briquetting screw hole on briquetting, connection spiral shell is provided on the heating platform
Hole, briquetting screw hole are connect with connecting screw hole by screw rod, and briquetting is placed in the upper surface of copper backboard, and briquetting is carried on the back copper by screw rod
Plate is overlayed in heating platform.
In further technical solution, in the a1 step, the compacting part selects F pincers, and F clamps the first side patch of jaw
Tightly in the heating platform, second side of F pincers jaw is closely attached on copper backboard, and the first side of F pincers and second side overlay copper backboard
In heating platform.
In further technical solution, in heating stepses, the ITO target and the copper backboard are warming up to 200 DEG C, described
Heating platform stops heating, and heat-preservation cotton covers ITO target and keeps the temperature 15-25 minutes.
In further technical solution, in c1 the and c2 step, the ultrasound coating unit is at the uniform velocity to the ultrasound
The indium of the offer molten of brush head.
In further technical solution, in the d, binding step, put between the ITO target and the copper backboard
The copper bead that diameter is 0.3~0.5mm or the copper wire that height is 0.3~0.5mm are set, to limit the thickness of binding layer.
It is described in b, heating stepses, it is preferable that by copper backboard and ITO target with 1.2- in further technical solution
The heating rate of 1.3 DEG C/min is warming up to 50 DEG C, then is warming up to 90 DEG C from 50 DEG C with the heating rate of 1.35-1.4 DEG C/min, then
130 DEG C are warming up to from 90 DEG C with the heating rate of 1.6-1.7 DEG C/min, then with the heating rate of 1.8-1.9 DEG C/min from 130 DEG C
160 DEG C are warming up to, then is warming up to 200 DEG C from 160 DEG C with the heating rate of 1.6-1.7 DEG C/min.
In further technical solution, the thickness of the cushion block is arranged in 2mm~10mm.
After adopting the above method, the invention has the advantages that compared with the prior art:
1. the present invention by being covered with heat-preservation cotton in ITO target, in one keeping warmth space of ITO target disposed of in its entirety, makes whole
Body is in the relatively uniform space of a temperature, is prevented ITO target locally uneven in temperature and is generated residual stress and rupture, and is improved
The quality of production.
2. the present invention is by the heating rate in control heating process, ITO target and copper backboard are slowly heated or cooling, have
Effect prevents ITO target and copper backboard internal stress from assembling, and improves binding rate.
3. the present invention is applied by effectively improving the mobility of binding solder indium in the control to binding temperature in conjunction with ultrasound
The transition zone of target metalization layer and backboard metalization layer is covered, increases ITO target and backboard respectively with the wellability of binding layer, leads to
It is at the uniform velocity coated when binding solder indium when crossing ultrasound coating, to control the uniformity of transition region thickness and ingredient, while good
On the basis of wellability, the welded rate of binding layer is high, and ingredient is uniform, and the ITO flat target conduction and heating conduction of formation are good.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is that binding method of the present invention is set in heating stepses and weight bearing step using the C-scan non-destructive testing of heat-preservation cotton
Standby stomata detects figure.
Fig. 2 is binding method of the present invention in heating stepses and weight bearing step without the C-scan non-destructive testing for using heat-preservation cotton
The stomata of equipment detects figure.
Specific embodiment
It is only below presently preferred embodiments of the present invention, is not intended to limit the scope of the present invention.
A kind of binding method of plane ITO target, existing ITO flat target binding method, since the material of ITO target is inclined
Brittle, being heated or cooled in binding procedure, temperature change, which controls improper one side, can make generation stress in ITO target poly-
Collection, be easy to produce and split target phenomenon, ITO target is caused to be scrapped, or rupture in use, can not normal use, it is another
Aspect, in binding procedure, temperature influences the mobility of binding solder, and the mobility for binding solder directly affects the soldering of target
Rate, welded rate is low to be caused to occur to take off in use to tie up, and the control of temperature is very important in binding procedure, many-sided
Influence the binding quality of ITO target.
Planar targets select ITO target, and backboard selects copper backboard, and binding solder selects indium, comprising the following steps:
A, copper backboard is pressed in heating platform by preparation process, and ITO target is placed in heating platform, due to copper backboard
Purity reaches 4N-5N, and the material is soft for fine copper, and under heating state, copper backboard temperature distortion is provided with compression in copper backboard
Component makes copper backboard keep straight during heating, since the material of ITO target is partially brittle, if ITO target uneven heating,
Stress build up is locally generated in ITO target, ruptures ITO target, needs to prevent ITO target stress during heating
Aggregation.Specifically include following sub-step:
A1, copper backboard compression is adhered on by heating platform by compacting part, to prevent copper backboard from erecting during heating
Histogram to deformation；During heating, it can arch upward upwards in vertical direction along the middle part of the length direction of copper backboard, to make copper
Backboard keeps straightened condition, and a compacting part is provided in the middle part of the length direction along copper backboard, carries on the back copper by compressed part
Plate is overlayed in heating platform.More specifically, in a1 step, the middle position of the length direction of copper backboard is arranged in compacting part
It sets, cushion block is placed between compacting part and copper backboard.The cushion block selects soft leatheroid or wooden unit, pad thickness setting
In 2mm-10mm.Since compacting part directly contacts and compress copper target material, the material is soft for copper target material, is easy the table to copper target material
Face scratches, it is therefore desirable to increase by a soft cushion block, prevent the compacting part of hard from directly contacting soft copper target material and causing
It scratches.Soft spacer plays certain buffer function simultaneously.Following two scheme preferred for compacting part, scheme one, a1 step
In rapid, for compacting part for preventing copper backboard from deforming during heating, compacting part selects briquetting, is provided with briquetting on briquetting
Screw hole is provided with connecting screw hole on heating platform, and briquetting screw hole is connect with connecting screw hole by screw rod, and briquetting is placed in copper back
The upper surface of plate, briquetting are overlayed copper backboard in heating platform by screw rod.The bottom surface of copper backboard is closely attached on heating platform, copper back
Briquetting is placed in the upper surface of plate, and the briquetting screw hole that screw rod passes through on briquetting is connect with connecting screw hole, makes briquetting by rotary screw
Copper backboard is pressed in heating platform.Scheme two, in a1 step, compacting part selects F pincers, and the first side of F pincers jaw is closely attached on
Heating platform, second side of F pincers jaw are closely attached on copper backboard, and the first side of F pincers and second side overlay copper backboard in heated flat
Platform.
A2, ITO target lower surface adhere on heating platform, be covered with heat-preservation cotton in the upper surface of ITO target.Due to
Heating platform is tightly attached in the lower surface of ITO target, and during heating, heating platform is constantly by heat under ITO target
Surface is transferred to the upper surface of ITO target, and existing processing mode is that the upper surface of ITO target is directly exposed in normal temperature environment
In, the upper surface or top of ITO target are in room temperature temperature (room temperature temperature is about at 25 DEG C) at heating initial stage, and in heated flat
Under the heating of platform, the heat of heating platform is constantly transmitted toward the lower part of ITO target, makes the underlaying surface temperature of ITO target gradually
Increase, and the heat of ITO target lower surface constantly from the following table of ITO target face upward surface direction transmitting.When under ITO target
When the heat that surface is communicated up encounters ITO target upper surface or top in room temperature, the lower part heat of ITO target, top is cold,
It is uneven in temperature inside ITO target, it is easy to produce stress build up at this time, and ITO target is caused to rupture or influence binding quality.At this
In the binding method of invention, ITO target is whole in the covering of heat-preservation cotton, when heating platform is begun to warm up, shape in heat-preservation cotton
At a keeping warmth space, temperature following heating platform temperature in keeping warmth space rises and rises, make the bulk temperature of ITO target with
Rise with the temperature in keeping warmth space and rise, guarantees the consistency that ITO target bulk temperature rises, can effectively avoid heating
In the process ITO target locally generation stress build up uneven in temperature and rupture.Heating effect is good, effectively reduces stress build up, after being
It is continuous to there is good binding quality to prepare.The fraction defective of product can be effectively reduced, reduce production cost, improve yields.More
Specifically, the material of heat-preservation cotton is Furtulon high temperature cloth in a2 step, the thickness of heat-preservation cotton is arranged in 0.4mm-0.7mm.It is preferred that
Heat-preservation cotton thickness be arranged in 0.5mm.
B, copper backboard and ITO target are warming up to 90 DEG C with the heating rate of 1.2-1.4 DEG C/min by heating stepses, then with
The heating rate of 1.6-1.9 DEG C/min is warming up to 200 DEG C from 90 DEG C, stops heating；Preferably, by copper backboard and ITO target
Material is warming up to 90 DEG C with the heating rate of 1.2-1.4 DEG C/min, then is warming up to the heating rate of 1.7-1.9 DEG C/min from 90 DEG C
200 DEG C, stop heating, technical effect is more preferably.Copper backboard and ITO target are heated by heating platform, make copper backboard and
The temperature of ITO target is both heated to 200 DEG C, and it is larger to be heated to 200 DEG C of temperature spans from room temperature, since the material of ITO target is crisp
Firmly, it is improper that rate temperature change control is heated or cooled, be easy to cause target stress build up and ruptures, or influence binding layer
Binding quality, therefore the heating rate of heating process control be particularly important.When beginning heat to 50 DEG C from room temperature, rise
Warm rate is adjusted to 1.2-1.4 DEG C/min, with lower heating rate, ITO target and copper backboard is made slowly to adapt to heating temperature, excellent
Choosing, in the heating period, heating rate is arranged in 1.2-1.3 DEG C/min.When being warming up to 90 DEG C from 50 DEG C, due to copper backboard with
ITO target is integrally heated to certain temperature, and copper backboard has started slowly active with ITO target interior molecules, and adapts to
Certain heating temperature at this point it is possible to continue to keep heating rate, or is promoted to preferably, slightly will heat up rate
1.35-1.4 DEG C/min, helps to shorten heating time, improve production efficiency.When temperature is warming up to 130 DEG C from 90 DEG C, copper at this time
Backboard and ITO target pass through general slow heating in 80 minutes, and copper backboard and ITO target integrally adapt to the heating ring of heating
Border, copper backboard and ITO target interior molecules all-round active, can will heat up rate at this time and be promoted to 1.6-1.9 DEG C/min again,
Preferably, it will heat up rate control in 1.6-1.7 DEG C/min.Temperature is warming up to 160 DEG C from 130 DEG C, will heat up rate holding
In 1.6-1.9 DEG C/min, or preferably, will heat up rate is promoted to 1.8-1.9 DEG C/min, mentioned with suitably accelerating temperature
It rises, shortens process time.Temperature is quite active in 130 DEG C -160 DEG C of copper backboard and ITO target interior molecules at this moment.
It is further continued for temperature being warming up to 200 DEG C from 160 DEG C, will heat up rate and be maintained at 1.6-1.9 DEG C/min, it is opposite from room temperature with one
Slightly higher rate heating when to 90 DEG C.Preferably, will heat up rate setting in 1.6-1.7 DEG C/min, opposite and 130-160
For DEG C temperature rise period, 160-200 DEG C of heating rate is slightly reduced, because subsequent binding temperature setting 190 DEG C -200 DEG C it
Between, heating rate is reduced in the last temperature rise period, makes copper backboard and ITO target interior molecules active degree relative reduction,
To adapt to subsequent cooling process, residual stress is avoided to generate.
According to step of the present invention, use different heating rates in b, heating stepses, obtain different binding welded rate and
Target rate is split in binding；
Table 1.1 is that target rate data are split in the binding welded rate obtained using different heating ramp rates and binding.
It obtains from the experimental data of table 1.1, is carried out in b, heating stepses by the heating rate to ITO target and copper backboard
Different settings obtains different target welded rate and binding and splits target rate.Since the material of ITO target is thermally conductive slow, and material is inclined
It is crisp, it is carried out in heating process to ITO target, if heating rate is too fast, keeps the side temperature heating of ITO target too fast and temperature
It gets higher, the other side keeps the temperature of ITO target two sides uneven in temperature also in normal temperature state, and stress is generated inside ITO target, is made
ITO target causes greatly very much to crack because of the temperature difference.Heating rate slightly also can guarantee the binding welded rate of target slowly, can also prevent binding procedure
The case where splitting target generation, but the production time is too long, influences production efficiency.Therefore, in binding technique of the invention, it is appropriate to choose
Heating rate, placement is split target and is happened, while improving production qualification rate, and also improving helps to shorten the production time.
More specifically, in b, heating stepses, ITO target and copper backboard are warming up to 200 DEG C, and heating platform stops adding
Heat, heat-preservation cotton cover ITO target and keep the temperature 15-25 minutes.At this point, ITO target under the covering of heat-preservation cotton, carries out heat preservation 15-25
Minute, so that ITO target and copper backboard is adapted to 190 DEG C -200 DEG C of silicon carbide, and in the temperature range, formed in heat-preservation cotton
ITO target slow cooling in keeping warmth space.In the pretreatment and binding procedure to ITO target and copper backboard, need to keep the temperature
Cotton is raised, and the temperature of ITO target and copper backboard will be slow reduction at this time, because binding temperature is between 170 DEG C -200 DEG C, binding temperature
Degree is in the ITO target and copper backboard temperature of production binding layer, it is preferred that binding temperature is set in 190 DEG C -195 DEG C, in ITO
The temperature of target and copper backboard is heated to 200 DEG C, be make subsequent binding pre-process and bind process in there are enough temperature
Degree decline space and although the temperature of enough operating times that swaps out, ITO target and copper backboard will be slow decline, but ITO target
Still be maintained at the temperature of copper backboard in binding temperature range, with provide enough binding pretreatments and bindings when
Between.After ITO target and copper backboard are heated to 200 DEG C, the temperature of ITO target and copper backboard starts between 190 DEG C -200 DEG C
Binding pretreatment.Heating platform is 15-25 minutes standby, obtains the uniformity of the heating temperature of ITO target and copper backboard into one
Step reinforce, meanwhile, the liveness of ITO target and copper backboard interior molecules gradually decreases, with gradually adapt to it is subsequent cooling or it is cold
But program.
C, binding pretreatment, the temperature of ITO target and copper backboard is between 190-200 DEG C, to ITO target and copper backboard
Binding face carries out ultrasonic coated with indium using ultrasonic coating unit respectively, when ITO target and copper backboard are between 190 DEG C -200 DEG C,
Solder indium is bound using ultrasound coating to the binding face of ITO target and copper backboard respectively, increase ITO target and copper backboard respectively with
Wellability between binding layer.Including following sub-step, c1, ultrasonic coating unit liquid reserve tank in add the indium of molten, storage
Indium is supplied in ultrasonic brush head according to the liquid feed speed of setting by liquid case, and ultrasonic brush head was according to 90-100mm/ minutes speed
It is at the uniform velocity moved in the binding face of copper backboard, until the binding face of copper backboard is completely covered in indium, forms one with a thickness of 0.05-0.1mm
Backboard metalization layer, complete the pretreatment of copper backboard；C2, by ultrasonic coating unit by the indium of molten according to the confession of setting
Ultrasonic brush head is flowed to speed, ultrasonic brush head is at the uniform velocity moved according to 90-100mm/ minutes speed in the binding face of ITO target
It is dynamic, until the binding face of ITO target is completely covered in indium, one is formed with a thickness of the target metalization layer of 0.05-0.1mm, completes ITO
The pretreatment of target；It is at the uniform velocity coated using ultrasound coating, ingredient and thickness is respectively formed on the binding face of ITO target and copper backboard
Spend uniform target metalization layer and backboard metalization layer.By the supply of quantitative binding solder indium, form ultrasound coating
Metallization layer thickness and ingredient it is uniform, in coating, pass through the binding face surface of ultrasonic destruction ITO target and copper backboard
Oxidation film, to make the indium of molten under the action of ultrasound, the indium part of molten diffuses to tying up for ITO target and copper backboard
Determine in face, the target metalization layer of formation and the binding face of ITO target are combined closely, and the backboard metalization layer to be formed and copper are carried on the back
The binding face of plate is combined closely, and the Percentage bound of soldering between different materials is improved.
More specifically, in c1 and c2 step, ultrasonic coating unit is at the uniform velocity to the indium of the offer molten of ultrasonic brush head.
Ultrasonic coating unit thickness according to needed for target metalization layer or backboard metalization layer, Xiang Chaosheng brush head according to setting liquid
Speed is provided, at the uniform velocity the indium of offer molten is to obtain target metalization layer and backboard metalization layer in homogeneous thickness.
D, step is bound, by the binding of ITO target facing towards the binding face of copper backboard, the determination of face range is bound, is logical
It crosses and unbundling area is screened using high temperature gummed tape, the range that do not screen is binding face.The binding face of ITO target and copper backboard
Binding face between be provided with set distance formed one binding gap, the height for binding gap is set in 0.3-0.5mm, at this
The indium that molten is filled in gap is bound, the space of the filling indium is binding layer, to form the binding layer of 0.3-0.5mm thickness,
The indium of molten is filled in the binding gap, the space of the filling indium is binding layer, in binding pre-treatment step, in ITO
The binding face of target passes through ultrasonic coated with indium and forms a uniform target metalization layer, is applied in the binding face of copper backboard by ultrasound
It covers indium and forms a uniform backboard metalization layer, binding solder selects indium, pours into binding gap and binds solder indium, in binding layer
Binding solder indium directly contacted respectively with target metalization layer and backboard metalization layer, target metalization layer and backboard metallize
Layer is identical as the binding material of solder respectively, the as soldering of same metal storeroom, reduction soldering difficulty, between same metal
Solubility, various characteristics such as fusing point are consistent, and wellability is good, and welded rate is high.More specifically, it in d, binding step, ties up
The thickness of given layer is arranged in 0.3-0.5mm.Including following sub-step:
D1, step is put down, range line component is put into the upper surface of copper backboard, more specifically, in ITO target and copper backboard
Between place diameter be 0.3-0.5mm copper bead or height be 0.3-0.5mm copper wire, to limit the thickness of binding layer, with true
The thickness for protecting the binding layer formed between ITO target and copper backboard, pours into the upper surface of copper backboard and is enough to fill full binding layer
Molten indium, by the binding of ITO target facing towards the binding face of copper backboard, the binding face of ITO target and tying up for copper backboard
Determine to form a binding angle between face, which is set in 30 ° -60 °, and ITO target is at the uniform velocity close to the binding face paste of copper backboard, directly
To the binding face keeping parallelism in the binding face and copper backboard of ITO target.At this point, the binding solder indium in binding layer is molten,
ITO target slow uniform descent in the form of angle makes the bubble in binding layer as the diminution of angle is moved to angle opening direction
Dynamic, until ITO target and copper backboard lid are flat, bubble is moved to the edge of ITO target and ruptures, and helps to reduce in binding layer
Bubble reduces the porosity.
D2, stomata step is gone, ITO target faces together relative to the flat-pushing movement of copper backboard, the binding of ITO target and copper backboard,
Form ITO flat target；ITO target is dynamic with respect to the relatively flat passage of copper backboard, ITO target can it is flat-pushing with respect to copper backboard or so or
Front and back is flat-pushing.It cannot pause when flat-pushing, need steady quick flat passage dynamic.The side of ITO target can be parallel to copper backboard
The flat-pushing shifting in medium position back and forth or left and right of the flat-pushing other side for shifting to copper backboard in side or the side of ITO target in copper backboard
It moves back and forth several times.By the relative movement of copper backboard and ITO target certain amplitude, the indium of molten in binding layer occurs opposite
Flowing, the copper bead for playing range line in binding solder is rolled with respect to indium, so that bubble remaining in binding layer be made to exist
Shock occurs with copper bead and vanishes, or the position of residual bubbles changes and ITO target or copper when relative flow occurs for indium
Backboard, which occurs to hit, vanishes, to achieve the effect that remove residual bubbles.
E, it bears a heavy burden step, the upper surface of ITO flat target is provided with weight bearing component, makes ITO flat target by gravity,
Make ITO flat target and copper backboard in binding solder indium solidification process, impaction state is remained, on the surface of ITO flat target
Heat-preservation cotton is covered, solidifies the solder indium of binding layer in the state of compression, completes the binding of ITO flat target.After removing bubble removing,
Weight bearing component is placed in the upper surface of ITO flat target, in 2-4kg, the component covering ITO that bears a heavy burden is flat for the weight setting of the weight bearing component
The upper surface of face target makes the entire uniform force of ITO flat target, it is preferred that and the weight setting of a weight bearing component is in 2kg, and two
Weight bearing component overlap, make the binding solder indium in binding layer under the action of gravity-pressing, make ITO target, copper backboard and
Binding layer is in close contact, and heat-preservation cotton is covered in ITO target, and heat-preservation cotton can make ITO flat target in an opposite thermal environment medium temperature
Degree slowly decline, makes binding layer solder indium in compression and temperature slowly decline in a state that solidifies, and so that binding layer is improved binding and welds
Conjunction rate.
The ITO flat target bound using the method for the present invention is kept the temperature without heat-preservation cotton in heating stepses and weight bearing step and is bound
The comparison ITO flat target of formation, chooses 3 groups of comparative experimentss respectively.
Table 1.2 is respectively in heating process and binding solder solidification process has lid heat-preservation cotton and no lid heat-preservation cotton does not bind to obtain
ITO flat target experimental data.
Binding splits target rate i.e. in binding since temperature change dramatically leads to the probability of target explosion.
Find out from the experimental data of table 1.2, does not make during binding solder solidification in binding procedure and after binding
It is kept the temperature with heat-preservation cotton, keeps ITO target uneven in temperature, be easy to cause and split target, material scrap causes high production cost.This hair
Bright binding method avoids the side temperature of ITO target from constantly increasing during heating, and other side temperature is in room temperature,
Uneven in temperature be easy to appear in the two sides of ITO target splits target phenomenon, and heat-preservation cotton is that ITO target forms a keeping warmth space, makes ITO target
Entirety increases ITO target bulk temperature slowly, whole ITO target can have slowly in the relatively uniform space of a temperature
The adaptation process of temperature change avoids the generation of ITO target internal stress, effectively prevent splitting target and happens, and improves production and closes
Lattice rate.In weight bearing step, after placing weight bearing component to ITO flat target, it is further whole that heat-preservation cotton is reused to ITO flat target
Heat preservation in a period of time after heat preservation, keeps the mobility of the binding solder in binding layer, under the extruding of weight bearing component,
So that binding solder is flowed to unbound position in binding layer, keeps the welded rate of ITO flat target after hardening higher.
Binding is kept the temperature without heat-preservation cotton using the ITO flat target of the method for the present invention binding and in heating stepses and weight bearing step
The comparison ITO flat target of formation is detected using C-scan non-destructive detecting device respectively, and the reflection of detection figure is in binding layer
Stomata there are situations.There is obvious line of demarcation in the middle part of Fig. 1 and Fig. 2, the left part in obvious line of demarcation is binding layer, from
Multiple positions in the binding layer of left side are seen in Fig. 2 there are black dough, which is continuous stomata, and there are black
Color dough is more, reflects that the binding welded rate of target is low.The left side in the obvious line of demarcation in Fig. 1 without seeing black dough,
Then reflect that the binding welded rate of the target is high.
The beneficial effect of binding method of the invention is:
1. the present invention by being covered with heat-preservation cotton in ITO target, in one keeping warmth space of ITO target disposed of in its entirety, makes whole
Body is in the relatively uniform space of a temperature, is prevented ITO target locally uneven in temperature and is generated residual stress and rupture, and is improved
The quality of production.
2. the present invention is by the heating rate in control heating process, ITO target and copper backboard are slowly heated or cooling, have
Effect prevents ITO target and copper backboard internal stress from assembling, and improves binding rate.
3. the present invention is applied by effectively improving the mobility of binding solder indium in the control to binding temperature in conjunction with ultrasound
The transition zone of target metalization layer and backboard metalization layer is covered, increases ITO target and backboard respectively with the wellability of binding layer, leads to
It is at the uniform velocity coated when binding solder indium when crossing ultrasound coating, to control the uniformity of transition region thickness and ingredient, while good
On the basis of wellability, the welded rate of binding layer is high, and ingredient is uniform, and the ITO flat target conduction and heating conduction of formation are good.
The above is only a preferred embodiment of the present invention, for those of ordinary skill in the art, according to the present invention
Thought, there will be changes in the specific implementation manner and application range, and the content of the present specification should not be construed as to the present invention
Limitation.
Claims (10)
1. a kind of binding method of plane ITO target, it is characterised in that: planar targets select ITO target, and backboard selects copper back
Plate, binding solder select indium, comprising the following steps:
Copper backboard is pressed in heating platform by preparation process, and ITO target is placed in heating platform, including following sub-step,
A1, copper backboard compression is adhered on by heating platform by compacting part, to prevent copper backboard vertical side during heating
To deformation；
A2, ITO target lower surface adhere on heating platform, be covered with heat-preservation cotton in the upper surface of ITO target；
B, copper backboard and ITO target are warming up to 90 DEG C with the heating rate of 1.2-1.6 DEG C/min by heating stepses, then with 1.6-
The heating rate of 1.9 DEG C/min is warming up to 200 DEG C from 90 DEG C, stops heating；
C, binding of the temperature of binding pretreatment, ITO target and copper backboard between 190-200 DEG C, to ITO target and copper backboard
Face carries out ultrasonic coated with indium, including following sub-step using ultrasonic coating unit respectively,
C1, the indium that molten is added in the liquid reserve tank of ultrasonic coating unit, liquid reserve tank will according to the liquid feed speed of setting
Indium is supplied in ultrasonic brush head, and ultrasonic brush head is at the uniform velocity moved according to 90-100mm/ minutes speed in the binding face of copper backboard, until
The binding face of copper backboard is completely covered in indium, forms one with a thickness of the backboard metalization layer of 0.05-0.1mm, completes the pre- of copper backboard
Processing；
C2, the indium of molten is flowed to according to the feed speed of setting by ultrasonic brush head, ultrasonic brush head by ultrasonic coating unit
It is at the uniform velocity moved according to 90-100mm/ minutes speed in the binding face of ITO target, until the binding of ITO target is completely covered in indium
Face forms one with a thickness of the target metalization layer of 0.05-0.1mm, completes the pretreatment of ITO target；
D, step is bound, by the binding of ITO target facing towards the binding face of copper backboard, the binding face of ITO target and copper backboard
The set distance that is provided between binding face forms a binding gap, and the height for binding gap is set in 0.3-0.5mm, ties up at this
The indium of filling molten in fixed gap, the space of the filling indium is binding layer, to form the binding layer of 0.3-0.5mm thickness, packet
Following sub-step is included,
D1, step is put down, range line component is put into the upper surface of copper backboard, with ensure to be formed between ITO target and copper backboard
The thickness of binding layer pours into the indium for being enough to fill the molten of full binding layer in the upper surface of copper backboard, by the binding of ITO target
A binding angle, the angle are formed facing towards the binding face of copper backboard, between binding face and the binding face of copper backboard of ITO target
30 ° -60 ° are set in, ITO target is at the uniform velocity close to the binding face paste of copper backboard, until the binding face of ITO target and tying up for copper backboard
Determine face keeping parallelism,
D2, stomata step is gone, ITO target is relative to the flat-pushing movement of copper backboard, and the binding of ITO target and copper backboard is in face of neat, formation
ITO flat target；
E, weight bearing step, is provided with weight bearing component in the upper surface of ITO flat target, makes ITO flat target by gravity, make
ITO flat target and copper backboard remain impaction state, in the surface cover of ITO flat target in binding solder indium solidification process
Upper heat-preservation cotton solidifies the solder indium of binding layer in the state of compression, completes the binding of ITO flat target.
2. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: in the a2 step, institute
The material for stating heat-preservation cotton is Furtulon high temperature cloth, and the thickness of heat-preservation cotton is arranged in 0.4mm-0.7mm.
3. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: in the a1 step, institute
The medium position that the length direction of the copper backboard is arranged in compacting part is stated, pad is placed between compacting part and copper backboard
Block.
4. a kind of binding method of plane ITO target according to claim 3, it is characterised in that: in the a1 step, institute
Compacting part is stated for preventing the copper backboard from deforming during heating, compacting part selects briquetting, is provided with pressure on briquetting
Block screw hole is provided with connecting screw hole on the heating platform, and briquetting screw hole is connect with connecting screw hole by screw rod, and briquetting is placed
In the upper surface of copper backboard, briquetting is overlayed copper backboard in heating platform by screw rod.
5. a kind of binding method of plane ITO target according to claim 3, it is characterised in that: in the a1 step, institute
It states compacting part and selects F pincers, the first side of F pincers jaw is closely attached on the heating platform, and second side of F pincers jaw is closely attached on copper back
Plate, the first side of F pincers and second side overlay copper backboard in heating platform.
6. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: in the b, heating step
In rapid, the ITO target and the copper backboard are warming up to 200 DEG C, and the heating platform stops heating, and heat-preservation cotton covers ITO target
Material keeps the temperature 15-25 minutes.
7. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: walked in the c1 and c2
In rapid, the ultrasound coating unit is at the uniform velocity to the indium of the offer molten of the ultrasonic brush head.
8. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: in the d, binding step
In rapid, copper bead that diameter is 0.3~0.5mm is placed between the ITO target and the copper backboard or height be 0.3~
The copper wire of 0.5mm, to limit the thickness of binding layer.
9. a kind of binding method of plane ITO target according to claim 1, it is characterised in that: described in b, heating step
In rapid, it is preferable that copper backboard and ITO target are warming up to 50 DEG C with the heating rate of 1.2-1.3 DEG C/min, then with 1.35-1.4
DEG C/heating rate of min is warming up to 90 DEG C from 50 DEG C, then is warming up to 130 from 90 DEG C with the heating rate of 1.6-1.7 DEG C/min
DEG C, then 160 DEG C are warming up to from 130 DEG C with the heating rate of 1.8-1.9 DEG C/min, then with the heating rate of 1.6-1.7 DEG C/min
200 DEG C are warming up to from 160 DEG C.
10. a kind of binding method of plane ITO target according to claim 3, it is characterised in that: the thickness of the cushion block
It is arranged in 2mm~10mm.
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Cited By (9)
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| CN110923643A (en) * | 2019-12-30 | 2020-03-27 | 福建阿石创新材料股份有限公司 | Binding method of planar target material |
| CN110948071A (en) * | 2019-11-22 | 2020-04-03 | 福建阿石创新材料股份有限公司 | Soldering method of splicing-free rotary target |
| CN111304605A (en) * | 2020-03-09 | 2020-06-19 | 东莞市欧莱溅射靶材有限公司 | ITO (indium tin oxide) rotary target binding method |
| CN112063986A (en) * | 2020-09-17 | 2020-12-11 | 福建阿石创新材料股份有限公司 | Target binding method |
| CN112935443A (en) * | 2021-02-03 | 2021-06-11 | 宁波江丰电子材料股份有限公司 | Welding method of brittle target material |
| CN114523169A (en) * | 2022-04-24 | 2022-05-24 | 江苏东玖光电科技有限公司 | Back tube indium preparation device |
| CN114833417A (en) * | 2022-06-13 | 2022-08-02 | 宁波江丰电子材料股份有限公司 | Method for welding ITO target and Mo back plate |
| CN115041767A (en) * | 2022-07-07 | 2022-09-13 | 宁波江丰电子材料股份有限公司 | Method for binding ITO target and Cu backboard |
| CN115041767B (en) * | 2022-07-07 | 2024-05-14 | 宁波江丰电子材料股份有限公司 | Method for binding ITO target material and Cu backboard |
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| CN115041767B (en) * | 2022-07-07 | 2024-05-14 | 宁波江丰电子材料股份有限公司 | Method for binding ITO target material and Cu backboard |
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Application publication date: 20191105 |