CN106119790A - A kind of tungsten nickel target processing method - Google Patents

A kind of tungsten nickel target processing method Download PDF

Info

Publication number
CN106119790A
CN106119790A CN201610656587.0A CN201610656587A CN106119790A CN 106119790 A CN106119790 A CN 106119790A CN 201610656587 A CN201610656587 A CN 201610656587A CN 106119790 A CN106119790 A CN 106119790A
Authority
CN
China
Prior art keywords
target
tungsten
protective layer
nickel
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610656587.0A
Other languages
Chinese (zh)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Original Assignee
Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Sichuang Yuanbo Electronic Technology Co Ltd filed Critical Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
Priority to CN201610656587.0A priority Critical patent/CN106119790A/en
Publication of CN106119790A publication Critical patent/CN106119790A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02Compacting only
    • B22F3/04Compacting only by applying fluid pressure, e.g. by cold isostatic pressing [CIP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • B22F3/15Hot isostatic pressing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24After-treatment of workpieces or articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24After-treatment of workpieces or articles
    • B22F2003/247Removing material: carving, cleaning, grinding, hobbing, honing, lapping, polishing, milling, shaving, skiving, turning the surface

Landscapes

  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Composite Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)

Abstract

The invention discloses a kind of tungsten nickel target processing method, first use isostatic cool pressing technique that tungsten, nickel mixed-powder and rustless steel hollow pipe are carried out densification first and preforming, form half fine and close tungsten, nickel mixed-powder and rustless steel initial blank, make follow-up heat and other static pressuring processes that tungsten, nickel mixed-powder and rustless steel initial blank can be carried out more preferable densification, preferably the part surface of target is carried out blasting treatment, do not interfere with other of target simultaneously and need not the part of sandblasting.

Description

A kind of tungsten nickel target processing method
Technical field
The present invention relates to alloy material and manufacture field, be specifically related to a kind of tungsten nickel target processing method.
Background technology
In recent years, growing along with sputtering target material and sputtering technology, sputtering target material serves more in sputtering technology Carrying out the most important effect, the quality of sputtering target material has directly influenced the quality of forming film after sputtering.Sputtering target material is broadly divided into flat Face target and pipe target, described pipe target is generally made up of sputtering target material and penstock, compared with flat target, the utilization rate of pipe target higher and After sputtering, quality of forming film is more preferable, has huge development potentiality in target market.
W-Ni hard alloy has high intensity, high rigidity, excellent wearability, thermostability and good corrosion resistance etc. Feature, is therefore widely used in the working environments such as high pressure, high rotating speed, high temperature, Korrosionsmedium.Owing to Ni belongs to face-centered cubic (F.c.c) crystallographic system, plasticity is fine, is susceptible to plastic deformation during wet grinding, forms the Ni powder ball of lamellar.
Tungsten nickel target is a kind of more typical alloy target material of ratio, and tungsten nickel has low-resistance coefficient, and good is thermally-stabilised Property and non-oxidizability;Meanwhile, good processability, the feature that toughness is high, therefore former using tungsten, nickel mixed-powder as sputtering target material Material, one of tungsten nickel pipe target pipe target having become semiconductor applications large usage quantity being made up of both raw materials.For now, use In the tungsten nickel pipe target of semiconductor manufacturing not only to compactness, hardness with the highest requirement can be had, simultaneously to material by processing type Interior tissue uniformity also has the highest requirement.
Owing to, in sputter procedure, the edge of target can leave the particulate matter that sputtering produces, these particulate matters are gradually Accumulation becomes deposit.Deposit gathers on target and peeling phenomenon (peeling) can occur the most afterwards, sinking of peeling Long-pending thing not only can affect sputtering environment, is also easy to drop on product surface, causes that product is defective even to be scrapped.To this end, it is existing There is technology the part non-sputtered region of target can be carried out blasting treatment, the so part surface through sandblasting and become coarse, enter And become easily to adsorb deposit, reduce peeling phenomenon odds.
Summary of the invention
The present invention provides a kind of tungsten nickel target processing method, first uses isostatic cool pressing technique to tungsten, nickel mixed-powder Carry out densification first and preforming with rustless steel hollow pipe, form half fine and close tungsten, nickel mixed-powder and the initial base of rustless steel Material, makes follow-up heat and other static pressuring processes tungsten, nickel mixed-powder and rustless steel initial blank can be carried out more preferable densification, with relatively The good part surface to target carries out blasting treatment, does not interferes with other of target simultaneously and need not the part of sandblasting.
To achieve these goals, the invention provides a kind of tungsten nickel target processing method, the method includes as follows Step:
(1) target is prepared
Thering is provided tungsten and nickel mixed-powder, the mass ratio of described tungsten powder and nikel powder is 9.95:1 to 10.05:1;
Described tungsten and nickel mixed-powder are carried out isostatic cool pressing technique, forms tungsten and nickel mixed-powder initial blank;
Described tungsten and nickel mixed-powder initial blank are loaded vacuum canning and to described vacuum canning evacuation after, to described tungsten Carry out heat and other static pressuring processes with nickel mixing initial blank, form tungsten nickel;
Remove described vacuum canning, it is thus achieved that with described tungsten nickel target;
Wherein, the technological temperature of described isostatic cool pressing technique is 50 DEG C to 150 DEG C, and environmental stress is 170MPa to 190MPa, Process time under described technological temperature and environmental stress is 15 minutes to 25 minutes;
Wherein, described heat and other static pressuring processes includes heating technique and HIP sintering technique;
The technological temperature of described heating technique is 300 DEG C to 400 DEG C, at said temperatures insulation 5 hours to 7 hours;
The technological temperature of described HIP sintering technique is 1150 DEG C to 1250 DEG C, and environmental stress is 160MPa to 200MPa, Process time under described technological temperature and environmental stress is 5 hours to 7 hours;
(2) blasting treatment
Thering is provided described tungsten nickel target, described target includes treating sand blasted area and need not the reservation region of sandblasting;
At least close part treating sand blasted area in described reservation region, and part treats that protective layer is pasted in sand blasted area;
Remove and be positioned at the protective layer treating sand blasted area, treat sand blasted area be completely exposed target;
Target is treated, and sand blasted area carries out blasting treatment;
After the step of blasting treatment, remove remaining protective layer on target.
Preferably, in described step (2), it is provided that the step of described tungsten nickel target includes: remove to be positioned at and treat sandblasting The step of the protective layer in region includes: use the mode of milling remove described in treat the protective layer of sand blasted area;
Wherein, remove and be positioned at the step of the protective layer treating sand blasted area and include: at lathe tool and the target material surface being pasted with protective layer Between arrange be not more than protective layer thickness gap, make described gap in the range of 0.02mm~0.04mm;
After removal is positioned at the step of the protective layer treating sand blasted area, before carrying out the step of blasting treatment, described target is processed Method also includes: use blade to treat that sandblasting region surface carries out process of removing photoresist for target;
After pasting the step of protective layer, before carrying out the step of blasting treatment, described target processing method also includes: use lid The part that protective layer is not pasted in reservation region by plate is blocked.
It is an advantage of the current invention that and first use isostatic cool pressing technique that tungsten, nickel mixed-powder and rustless steel hollow pipe are carried out first Densification and preforming, form half fine and close tungsten, nickel mixed-powder and rustless steel initial blank, make follow-up heat and other static pressuring processes Tungsten, nickel mixed-powder and rustless steel initial blank can be carried out more preferable densification, preferably the part surface of target to be entered Row blasting treatment, does not interferes with other of target simultaneously and need not the part of sandblasting.
Detailed description of the invention
Embodiment one
Prepare target
Thering is provided tungsten and nickel mixed-powder, the mass ratio of described tungsten powder and nikel powder is 9.95:1;
Described tungsten and nickel mixed-powder are carried out isostatic cool pressing technique, forms tungsten and nickel mixed-powder initial blank;
Described tungsten and nickel mixed-powder initial blank are loaded vacuum canning and to described vacuum canning evacuation after, to described tungsten Carry out heat and other static pressuring processes with nickel mixing initial blank, form tungsten nickel;
Remove described vacuum canning, it is thus achieved that with described tungsten nickel target.
Wherein, the technological temperature of described isostatic cool pressing technique is 50 DEG C, and environmental stress is 170MPa, at described technological temperature It it is 15 minutes with the process time under environmental stress.
Wherein, described heat and other static pressuring processes includes heating technique and HIP sintering technique;
The technological temperature of described heating technique is 300 DEG C, at said temperatures insulation 5 hours;
The technological temperature of described HIP sintering technique is 1150 DEG C, and environmental stress is 160MPa, at described technological temperature and Process time under environmental stress is 5 hours.
Blasting treatment
Thering is provided described tungsten nickel target, described target includes treating sand blasted area and need not the reservation region of sandblasting;At least The close part treating sand blasted area in described reservation region, and partly treat that protective layer is pasted in sand blasted area;Removal is positioned to be painted The protective layer in sand region, treats sand blasted area be completely exposed target;Target is treated, and sand blasted area carries out blasting treatment;In spray After the step that sand processes, remove remaining protective layer on target.
Preferably, it is provided that the step of described tungsten nickel target includes: remove the step being positioned at the protective layer treating sand blasted area Suddenly include: use the mode of milling remove described in treat the protective layer of sand blasted area.
Wherein, remove and be positioned at the step of the protective layer treating sand blasted area and include: at lathe tool and the target being pasted with protective layer The gap being not more than protective layer thickness is set between surface, makes described gap in the range of 0.02mm~0.04mm.
After removal is positioned at the step of the protective layer treating sand blasted area, before carrying out the step of blasting treatment, described target Processing method also includes: use blade to treat that sandblasting region surface carries out process of removing photoresist for target.
After pasting the step of protective layer, before carrying out the step of blasting treatment, described target processing method also includes: adopt Part reservation region not being pasted protective layer with cover plate is blocked.
Embodiment two
Prepare target
Thering is provided tungsten and nickel mixed-powder, the mass ratio of described tungsten powder and nikel powder is 10.05:1;
Described tungsten and nickel mixed-powder are carried out isostatic cool pressing technique, forms tungsten and nickel mixed-powder initial blank;
Described tungsten and nickel mixed-powder initial blank are loaded vacuum canning and to described vacuum canning evacuation after, to described tungsten Carry out heat and other static pressuring processes with nickel mixing initial blank, form tungsten nickel;
Remove described vacuum canning, it is thus achieved that with described tungsten nickel target.
Wherein, the technological temperature of described isostatic cool pressing technique is 150 DEG C, and environmental stress is 190MPa, at described process warm Process time under degree and environmental stress is 25 minutes.
Wherein, described heat and other static pressuring processes includes heating technique and HIP sintering technique;
The technological temperature of described heating technique is 400 DEG C, at said temperatures insulation 7 hours;
The technological temperature of described HIP sintering technique is 1250 DEG C, and environmental stress is 200MPa, at described technological temperature and Process time under environmental stress is 7 hours.
Blasting treatment
Thering is provided described tungsten nickel target, described target includes treating sand blasted area and need not the reservation region of sandblasting;At least The close part treating sand blasted area in described reservation region, and partly treat that protective layer is pasted in sand blasted area;Removal is positioned to be painted The protective layer in sand region, treats sand blasted area be completely exposed target;Target is treated, and sand blasted area carries out blasting treatment;In spray After the step that sand processes, remove remaining protective layer on target.
Preferably, it is provided that the step of described tungsten nickel target includes: remove the step being positioned at the protective layer treating sand blasted area Suddenly include: use the mode of milling remove described in treat the protective layer of sand blasted area.
Wherein, remove and be positioned at the step of the protective layer treating sand blasted area and include: at lathe tool and the target being pasted with protective layer The gap being not more than protective layer thickness is set between surface, makes described gap in the range of 0.02mm~0.04mm.
After removal is positioned at the step of the protective layer treating sand blasted area, before carrying out the step of blasting treatment, described target Processing method also includes: use blade to treat that sandblasting region surface carries out process of removing photoresist for target.
After pasting the step of protective layer, before carrying out the step of blasting treatment, described target processing method also includes: adopt Part reservation region not being pasted protective layer with cover plate is blocked.

Claims (2)

1. a tungsten nickel target processing method, the method comprises the steps:
(1) target is prepared
Thering is provided tungsten and nickel mixed-powder, the mass ratio of described tungsten powder and nikel powder is 9.95:1 to 10.05:1;
Described tungsten and nickel mixed-powder are carried out isostatic cool pressing technique, forms tungsten and nickel mixed-powder initial blank;
Described tungsten and nickel mixed-powder initial blank are loaded vacuum canning and to described vacuum canning evacuation after, to described tungsten Carry out heat and other static pressuring processes with nickel mixing initial blank, form tungsten nickel;
Remove described vacuum canning, it is thus achieved that with described tungsten nickel target;
Wherein, the technological temperature of described isostatic cool pressing technique is 50 DEG C to 150 DEG C, and environmental stress is 170MPa to 190MPa, Process time under described technological temperature and environmental stress is 15 minutes to 25 minutes;
Wherein, described heat and other static pressuring processes includes heating technique and HIP sintering technique;
The technological temperature of described heating technique is 300 DEG C to 400 DEG C, at said temperatures insulation 5 hours to 7 hours;
The technological temperature of described HIP sintering technique is 1150 DEG C to 1250 DEG C, and environmental stress is 160MPa to 200MPa, Process time under described technological temperature and environmental stress is 5 hours to 7 hours;
(2) blasting treatment
Thering is provided described tungsten nickel target, described target includes treating sand blasted area and need not the reservation region of sandblasting;
At least close part treating sand blasted area in described reservation region, and part treats that protective layer is pasted in sand blasted area;
Remove and be positioned at the protective layer treating sand blasted area, treat sand blasted area be completely exposed target;
Target is treated, and sand blasted area carries out blasting treatment;
After the step of blasting treatment, remove remaining protective layer on target.
2. the method for claim 1, it is characterised in that in described step (2), it is provided that described tungsten nickel target Step includes: removes and is positioned at the step of the protective layer treating sand blasted area and includes: use the mode of milling remove described in treat sandblasting district The protective layer in territory;
Wherein, remove and be positioned at the step of the protective layer treating sand blasted area and include: at lathe tool and the target material surface being pasted with protective layer Between arrange be not more than protective layer thickness gap, make described gap in the range of 0.02mm~0.04mm;
After removal is positioned at the step of the protective layer treating sand blasted area, before carrying out the step of blasting treatment, described target is processed Method also includes: use blade to treat that sandblasting region surface carries out process of removing photoresist for target;
After pasting the step of protective layer, before carrying out the step of blasting treatment, described target processing method also includes: use lid The part that protective layer is not pasted in reservation region by plate is blocked.
CN201610656587.0A 2016-08-12 2016-08-12 A kind of tungsten nickel target processing method Pending CN106119790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610656587.0A CN106119790A (en) 2016-08-12 2016-08-12 A kind of tungsten nickel target processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610656587.0A CN106119790A (en) 2016-08-12 2016-08-12 A kind of tungsten nickel target processing method

Publications (1)

Publication Number Publication Date
CN106119790A true CN106119790A (en) 2016-11-16

Family

ID=57257686

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610656587.0A Pending CN106119790A (en) 2016-08-12 2016-08-12 A kind of tungsten nickel target processing method

Country Status (1)

Country Link
CN (1) CN106119790A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107604334A (en) * 2017-09-21 2018-01-19 中国建筑材料科学研究总院 Nickel-tungsten oxide film and preparation method thereof
CN110885963A (en) * 2019-10-09 2020-03-17 安泰天龙钨钼科技有限公司 Tungsten-nickel alloy target material and preparation method thereof
CN112008083A (en) * 2020-08-27 2020-12-01 山东旭拓新材料科技有限公司 Austenitic stainless steel and hard alloy composite material as well as preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102343437A (en) * 2011-11-11 2012-02-08 宁波江丰电子材料有限公司 Method for manufacturing tungsten target material
CN104480446A (en) * 2014-12-30 2015-04-01 山东昊轩电子陶瓷材料有限公司 Molybdenum-titanium alloy target material and production method thereof
CN105695943A (en) * 2014-11-28 2016-06-22 宁波江丰电子材料股份有限公司 Target processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102343437A (en) * 2011-11-11 2012-02-08 宁波江丰电子材料有限公司 Method for manufacturing tungsten target material
CN105695943A (en) * 2014-11-28 2016-06-22 宁波江丰电子材料股份有限公司 Target processing method
CN104480446A (en) * 2014-12-30 2015-04-01 山东昊轩电子陶瓷材料有限公司 Molybdenum-titanium alloy target material and production method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107604334A (en) * 2017-09-21 2018-01-19 中国建筑材料科学研究总院 Nickel-tungsten oxide film and preparation method thereof
CN110885963A (en) * 2019-10-09 2020-03-17 安泰天龙钨钼科技有限公司 Tungsten-nickel alloy target material and preparation method thereof
CN110885963B (en) * 2019-10-09 2022-03-04 安泰天龙钨钼科技有限公司 Tungsten-nickel alloy target material and preparation method thereof
CN112008083A (en) * 2020-08-27 2020-12-01 山东旭拓新材料科技有限公司 Austenitic stainless steel and hard alloy composite material as well as preparation method and application thereof

Similar Documents

Publication Publication Date Title
CN106119790A (en) A kind of tungsten nickel target processing method
TW200540285A (en) Sputtering target with few surface defects and method for processing surface thereof
JP5074628B1 (en) Indium sputtering target and method for manufacturing the same
CN104480446A (en) Molybdenum-titanium alloy target material and production method thereof
CN105714253A (en) Preparation method of large-size and fine-grain molybdenum tantalum alloy sputtering target material
CN106756846A (en) A kind of preparation method of codope DLC film
CN105908047B (en) A kind of titanium aluminium silicon tantalum alloy material and preparation method thereof
CN103981496B (en) A kind of apparatus and method preparing TiAlCrN multi-element coating
CN106544632A (en) A kind of tungsten niobium alloy target processing method
CN106119788A (en) A kind of modified tungsten nickel target prepares work method
JPH03257158A (en) Sputtering target
JP7419885B2 (en) Mo alloy target material and its manufacturing method
CN105755435A (en) A sputtering surface machining method for a titanium target material
US20090029068A1 (en) Carbon thin film manufacturing method and carbon thin film coated body
CN104002202A (en) Production method of high-cleanliness and defect-free roughened surface of thin belt continuous casting crystallization roller
JP2013249491A (en) Film deposition method
CN111155060A (en) Method for manufacturing cobalt target blank
CN110656301A (en) Preparation method of controllable nitriding-PVD (physical vapor deposition) composite coating for high-speed steel tool
CN111733393B (en) Surface treatment method of molybdenum target blank after cold isostatic pressing
CN112808833B (en) Method for preparing high-performance ferromagnetic target material
US9987727B2 (en) Induction heated vacuum furnace for making brazed diamond dental burrs
CN107858656B (en) Preparation method of CuSe compound rotary target material
CN109457087B (en) Process method for preparing intermetallic compound coating on metal surface
CN108118123B (en) Process method for depositing TiN film layer on GT35 precision assembly part
CN108239716A (en) A kind of preparation method for having nitrogen-yttrium-zirconium hard coat tungsten nickel

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20161116