CN101745714A - Welding method of target assembly - Google Patents
Welding method of target assembly Download PDFInfo
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- CN101745714A CN101745714A CN200910261153A CN200910261153A CN101745714A CN 101745714 A CN101745714 A CN 101745714A CN 200910261153 A CN200910261153 A CN 200910261153A CN 200910261153 A CN200910261153 A CN 200910261153A CN 101745714 A CN101745714 A CN 101745714A
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- backboard
- solder
- faying face
- material assembly
- target blank
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Abstract
The invention relates to a welding method of a target assembly, comprising the following steps of: providing a chromium target blank, a backboard and brazing filler metal; preheating the chromium target blank, uniformly coating the brazing filler metal on the joint face of the chromium target blank, sufficiently soaking brazing filler metal at the joint face of the chromium target blank and removing redundant brazing filler metal on the joint face of the chromium target blank; polishing and preheating the joint face of the backboard, uniformly coating the brazing filler metal on the joint face of the backboard, and processing the backboard added with the brazing filler metal by ultrasonic; brazing the chromium target blank and the backboard, and welding the chromium target blank to the backboard to form the target assembly; and cooling the target assembly. The invention can enhance the bond strength of the chromium target blank and the backboard after brazing and meet the product quality requirement.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the welding method of target material assembly.
Background technology
Generally, target material assembly is to constitute by the target that meets sputtering performance with backboard that described target combined, had certain intensity.Described backboard can be assembled in the sputter base station at described target material assembly and play a supporting role, and has the effect of conduction heat.In sputter procedure, the working environment of described target material assembly is more abominable, and for example, the target material assembly operating temperature is higher, for example 300 ℃ to 500 ℃; In addition, a side of target material assembly is cold by force by cooling water, and opposite side then is in 10
-9Under the high vacuum environment of Pa, relative two sides at target material assembly are formed with huge pressure differential thus; Have, target material assembly is in high voltage electric field, the magnetic field again, is subjected to the bombardment of various particles.Under rugged environment like this, if the bond strength in the target material assembly between target and the backboard is lower, to cause target under heating condition, to be out of shape, to ftracture and come off mutually with the backboard of combination, make sputter can't reach the sputter effect of uniform, also may cause damage simultaneously the sputter base station.
Therefore select a kind of effective welding manner, make target and backboard realize reliable connection, satisfy the needs of producing, using target steady in a long-term, just seem very necessary.
The dissimilar metal welding is a procedure very crucial in the target production process, and different targets need weld with different welding methods.With the chromium target is example, chromium is because its special physicochemical character, not high with the soldering bond strength of dissimilar metal, general processing method adopts brazing mode that chromium target and dissimilar metal (can be the acid bronze alloy that comprises copper or copper alloy, or comprise the acieral of aluminum or aluminum alloy) backboard are directly welded exactly at present.The correlation technique of the dissimilar metal of relevant target welding can consult in addition that number of patent application is 200610146033.2, denomination of invention is the Chinese patent file of " a kind of method for welding ".
But, because being difficult to soak into, chromium and low-temperature brazing filler metal (about 300 ℃) merge, and when using high-temp solder (at least greater than 1000 ℃), copper or copper alloy be oxidation easily again, weld seam tensile strength is low, welding back bond strength is lower, and the welding quality instability does not reach the quality requirements of semiconductor target assembly.
Summary of the invention
The present invention solves chromium target blank and backboard, and to form in the weld job of target material assembly bond strength lower, the welding quality problem of unstable.
For addressing the above problem, the invention provides a kind of welding method of target material assembly, comprising: chromium target blank, backboard and solder are provided; Described chromium target blank is carried out preheating, solder is uniformly coated on the faying face of chromium target blank, make solder fully soak into, remove redundant brazing on the faying face of chromium target blank at the faying face of chromium target blank; Faying face to described backboard carries out grinding process, and carries out preheating, and solder is uniformly coated on the faying face of backboard, and ultrasonic wave is handled the backboard that adds solder; Chromium target blank and backboard are carried out soldering, chromium target blank is soldered to backboard forms target material assembly; The cooling target material assembly.
Alternatively, described welding method comprises that also chromium target blank is soldered to the target material assembly that backboard forms carries out roughing and accurately machined step.
Alternatively, described back veneer material specifically is selected from acieral or acid bronze alloy.
Alternatively, described solder is selected from lead-free brazing, and wherein the mass percent of silver is 0.2% in the solder.
It is alternatively, described that chromium target blank is carried out preheat temperature is 200 ℃ to 250 ℃.
Alternatively, the described faying face that makes solder and chromium target blank fully soak into comprise steel brush is stained with solder friction chromium target blank faying face back and forth.
Alternatively, described faying face to backboard carries out grinding process for the faying face of backboard being carried out the faying face of grinding process and usefulness alcohol wash backboard with 180 orders or 230 purpose sand paper.
It is alternatively, described that backboard is carried out preheat temperature is 200 ℃ to 250 ℃.
Alternatively, the technological parameter of the backboard of described ultrasonic wave processing interpolation solder is that the power output of ultrasonic oscillator is 25Hz to 35Hz.
Alternatively, describedly chromium target blank and backboard are carried out soldering treatment process parameter be: 260 ℃ to 280 ℃ of operating temperatures, pressure 0.48 MPa to 0.52 MPa.
Compared with prior art, the present invention has the following advantages: solder is uniformly coated on the faying face of chromium target blank and the faying face of backboard, prevented effectively chromium target blank and backboard in welding process by airborne dioxygen oxidation, and adopted the method for solder welding, chromium target blank and backboard bond strength height, the product process-cycle is short.
Description of drawings
Fig. 1 makes the flow chart of target material assembly for one embodiment of the present invention;
Fig. 2 to Fig. 3 is a structural representation of making target material assembly according to flow process shown in Figure 1.
The specific embodiment
The present inventor finds in the weld job of existing chromium target assembly it is to adopt brazing mode that chromium or evanohm target and dissimilar metal (for example copper, copper alloy, aluminum or aluminum alloy) backboard are directly welded, easily cause the two welding quality instability (for example solder bond intensity is weak), do not reach the requirement of semiconductor target.
The invention provides a kind of preparation method of target material assembly, comprising: chromium target blank, backboard and solder are provided; Described chromium target blank is carried out preheating, solder is uniformly coated on the faying face of chromium target blank, make solder fully soak into, remove redundant brazing on the faying face of chromium target blank at the faying face of chromium target blank; Faying face to described backboard carries out grinding process, and carries out preheating, and solder is uniformly coated on the faying face of backboard, and ultrasonic wave is handled the backboard that adds solder; Chromium target blank and backboard are carried out soldering, chromium target blank is soldered to backboard forms target material assembly; The cooling target material assembly.By solder fully being infiltrated on the faying face of chromium target blank and the faying face of backboard, strengthen the two bond strength in brazing operation.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
With reference to figure 1, embodiment of the present invention provides a kind of welding method of target, comprises the steps:
Step S1 provides chromium target blank, backboard and solder;
Step S3 carries out preheating to described chromium target blank, and solder is uniformly coated on the faying face of chromium target blank, makes solder fully soak at the faying face of chromium target blank, removes redundant brazing on the faying face of chromium target blank; Faying face to described backboard carries out grinding process, and carries out preheating, and solder is uniformly coated on the faying face of backboard, and ultrasonic wave is handled the backboard that adds solder;
Step S5 carries out soldering to chromium target blank and backboard, chromium target blank is soldered to backboard forms target material assembly;
Step S7, the cooling target material assembly.
Be elaborated for above-mentioned example procedure below in conjunction with accompanying drawing.In conjunction with illustrated in figures 1 and 2, execution in step S 1, and chromium target blank 10, backboard 20 and solder (not shown) are provided.In the present embodiment, the purity of described chromium target blank 10 for example is 3N5 (purity 99.95%), 4N5 (purity 99.995%) or 5N (99.999%) greater than 99.9%; The shape of chromium target blank 10, actual requirement according to applied environment, sputtering equipment, can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any, and its thickness can not wait for 1mm to 80mm.Be that example describes now with the square target that is shaped as rectangle.
The shape of described backboard 20, actual requirement according to applied environment, sputtering equipment, can be in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped) any, and its thickness can not wait for 1mm to 80mm.In the present embodiment, the shape of described backboard 20 is corresponding with chromium target blank 10, for rectangular-shaped.In addition, backboard 20 materials can be selected from acid bronze alloy (copper or copper alloy) or acieral (aluminum or aluminum alloy), and for ease of explanation, existing material with backboard 20 is that metallic copper is that example describes.
Described solder is a lead-free brazing, and described lead-free brazing can be tin-silver-copper (Sn-Ag-Cu) series leadless solder, also can be tin and bismuth (Sn-Bi) series leadless solder.For example for the tin-silver-copper series leadless solder, can also add nickel (Ni) and germanium (Ge) makes solder be difficult for oxidation, thereby scum silica frost takes place seldom, have preferable zygosity and stable on heating feature, real be preferable solder selection.
Then execution in step S3 fully is infiltrated on the faying face of chromium target blank and the faying face of backboard with solder.
The described faying face that solder fully is infiltrated on chromium target blank comprises:
At first, chromium target blank 10 is carried out preheating, purpose is to allow the solder in the subsequent technique and the faying face 100 of chromium target blank 10 fully soak into.Described chromium target blank 10 preheatings can be adopted the heating plate heating, and heating-up temperature is 200 ℃ to 250 ℃.
Take second place; when the chromium target blank temperature reaches 200 ℃ to 250 ℃; solder (not showing) is uniformly coated on the faying face 100 of chromium target blank 10 in graphic; purpose is to allow solder fully fully soak at the faying face 100 of chromium target blank 10; improve the bond strength of welding; and solder has been protected chromium target blank 10, prevents chromium target blank 10 oxidation in welding process.
Again it, adopt faying face 100 that steel brush is stained with solder friction chromium target blank 10 (for example 3 to 4 times) back and forth, increase the surface roughness of faying face 100, make the faying face 100 of solder and chromium target blank 10 fully soak into, the welding that is beneficial to follow-up chromium target blank 10 and backboard 20 can obtain higher bond strength.In addition, also comprise redundant brazing on the faying face 100 that adopts scraper to remove chromium target blank 10.
The described faying face that solder fully is infiltrated on backboard comprises:
At first, faying face 200 to backboard 20 carries out grinding process, purpose is the oxide layer of the faying face 200 of removal backboard 20, being specifically as follows usefulness is that 180 orders or 230 purpose sand paper are polished to the faying face 200 of backboard 20 for example, polishing finishes and can use alcohol wash faying face 200, the pollutant that forms when being used to remove polishing.
Take second place, backboard 20 is carried out preheating, purpose is to allow the solder in the subsequent technique and the faying face 200 of backboard 20 fully soak into, and described backboard 20 preheatings can be adopted the heating of weld heating device, and heating-up temperature is 200 ℃ to 250 ℃.
It is uniformly coated on solder (not showing) on the faying face 200 of backboard 20 in graphic again, and purpose allows backboard 20 by solder and chromium target blank welding.
Again it, the backboard 20 of solder is added in ultrasonic processing, is used for removing solder oxidation waste material and residue.Described technology can be carried out with manual ultrasonic brazing unit, and optimal process parameter is 260 ℃ to 280 ℃ of welder temperature, and backboard 20 temperature are 200 ℃ to 250 ℃, and the ultrasonic oscillator power output is 25Hz to 35Hz.
With reference to figure 3, execution in step S5, chromium target blank 10 and backboard 20 are carried out soldering, with non-binding of vacuum cup absorption chromium target blank 10, allow the faying face 100 of chromium target blank 10 contact with the faying face 200 of backboard 20, and the non-binding face of pinning chromium target blank 10 pushes or rotates, make redundant brazing discharge with the slit of faying face 200 formation of backboard 20 from the faying face 100 of chromium target blank 10, chromium target blank 10 with combination moves to press bench with backboard 20 then, the workbench operating temperature is 260 ℃ to 280 ℃ of operating temperatures, pressure 0.48 MPa to 0.52 MPa is soldered to backboard with chromium target blank and forms target material assembly.
Owing in step 3, the even coating of solder (lead-free brazing) also fully is infiltrated on the faying face of chromium target blank and the faying face of backboard, make solder combine closely, the bond strength after raising chromium target blank and the backboard welding with chromium target blank and backboard.
Execution in step S7 is described, the cooling target material assembly, and described cooling target material assembly can adopt the forcing press circulating water cooling device, keeps pressure 0.48 MPa to 0.52 MPa, and target material assembly is cooled to room temperature.
It should be noted that follow-up, after chromium target blank 10 and backboard 20 welding were formed target material assembly, the target material assembly that can further include described formation carried out roughing and accurately machined treatment step, makes it to meet the requirement of product.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. the welding method of a target material assembly is characterized in that, comprising:
Chromium target blank, backboard and solder are provided;
Described chromium target blank is carried out preheating, solder is uniformly coated on the faying face of chromium target blank, make solder fully soak into, remove redundant brazing on the faying face of chromium target blank at the faying face of chromium target blank;
Faying face to described backboard carries out grinding process, and carries out preheating, and solder is uniformly coated on the faying face of backboard, and ultrasonic wave is handled the backboard that adds solder;
Chromium target blank and backboard are carried out soldering, chromium target blank is soldered to backboard forms target material assembly;
The cooling target material assembly.
2. the welding method of target material assembly according to claim 1 is characterized in that, comprises that also chromium target blank is soldered to the target material assembly that backboard forms carries out roughing and accurately machined step.
3. the welding method of target material assembly according to claim 1 is characterized in that, described back veneer material specifically is selected from acieral or acid bronze alloy.
4. the welding method of target material assembly according to claim 1 is characterized in that, described solder is selected from lead-free brazing, and wherein the mass percent of silver is 0.2% in the solder.
5. the welding method of target material assembly according to claim 1 is characterized in that, described chromium target blank is carried out preheat temperature is 200 ℃ to 250 ℃.
6. the welding method of target material assembly according to claim 1 is characterized in that, the described faying face that makes solder and chromium target blank fully soak into comprise steel brush is stained with solder friction chromium target blank faying face back and forth.
7. the welding method of target material assembly according to claim 1 is characterized in that, described faying face to backboard carries out grinding process for the faying face of backboard being carried out the faying face of grinding process and usefulness alcohol wash backboard with 180 orders or 230 purpose sand paper.
8. the welding method of target material assembly according to claim 1 is characterized in that, described backboard is carried out preheat temperature is 200 ℃ to 250 ℃.
9. the welding method of target material assembly according to claim 1 is characterized in that, the technological parameter that the backboard of solder is added in described ultrasonic wave processing is that the power output of ultrasonic oscillator is 25Hz to 35Hz.
10. the welding method of target material assembly according to claim 1 is characterized in that, describedly chromium target blank and backboard are carried out soldering treatment process parameter is: 260 ℃ to 280 ℃ of operating temperatures, pressure 0.48 MPa to 0.52 MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910261153A CN101745714A (en) | 2009-12-28 | 2009-12-28 | Welding method of target assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910261153A CN101745714A (en) | 2009-12-28 | 2009-12-28 | Welding method of target assembly |
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| CN101745714A true CN101745714A (en) | 2010-06-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN102528307A (en) * | 2011-12-26 | 2012-07-04 | 昆山全亚冠环保科技有限公司 | Large-size Al target welding method |
| CN107511586A (en) * | 2017-10-09 | 2017-12-26 | 有研亿金新材料有限公司 | A kind of method of laser assisted welding target and backboard |
| CN113828881A (en) * | 2021-10-20 | 2021-12-24 | 宁波江丰电子材料股份有限公司 | Brazing method for polycrystalline silicon target and copper back plate |
-
2009
- 2009-12-28 CN CN200910261153A patent/CN101745714A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN102501045B (en) * | 2011-10-20 | 2014-10-08 | 宁波江丰电子材料股份有限公司 | Method and device for processing nickel target component |
| CN102528307A (en) * | 2011-12-26 | 2012-07-04 | 昆山全亚冠环保科技有限公司 | Large-size Al target welding method |
| CN107511586A (en) * | 2017-10-09 | 2017-12-26 | 有研亿金新材料有限公司 | A kind of method of laser assisted welding target and backboard |
| CN113828881A (en) * | 2021-10-20 | 2021-12-24 | 宁波江丰电子材料股份有限公司 | Brazing method for polycrystalline silicon target and copper back plate |
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Application publication date: 20100623 |