CN108672720A - A kind of method for turning of high-purity tantalum target - Google Patents
A kind of method for turning of high-purity tantalum target Download PDFInfo
- Publication number
- CN108672720A CN108672720A CN201810851251.9A CN201810851251A CN108672720A CN 108672720 A CN108672720 A CN 108672720A CN 201810851251 A CN201810851251 A CN 201810851251A CN 108672720 A CN108672720 A CN 108672720A
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- Prior art keywords
- turning
- tantalum target
- purity tantalum
- blade
- purity
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B1/00—Methods for turning or working essentially requiring the use of turning-machines; Use of auxiliary equipment in connection with such methods
Abstract
A kind of method for turning of high-purity tantalum target, is related to sputtering target material field, and blade is used, towards the processing method of high-purity tantalum target being centrally fed, and to carry out stringent restriction to turning speed along the diametric(al) of high-purity tantalum target.The method for turning it is easy to operate, it is not high to equipment requirement.Find that, for tantalum target, when turning speed is limited to 250~300m/min, the high-purity tantalum target surface quality after processing is preferable, can preferably avoid the appearance of the surface defects such as protrusion, pit and turning extruded layer by inventor's creative work.In addition, under above-mentioned turning speed, it is smaller for the loss of blade, while saving blade, the time of more allowing blade replacement is also ad save, is more favorable for reducing production cost.
Description
Technical field
The present invention relates to sputtering target material fields, in particular to a kind of method for turning of high-purity tantalum target.
Background technology
Sputtering target material is mainly used in electronics and information industry, such as integrated circuit, information storage, liquid crystal display, laser
Memory, electronic control device etc.；It is equally applicable for coating film on glass field；Can also be applied to wear-resistant material, high temperature is anti-corrosion, high
The industries such as shelves adornment.It is the indispensable consumable material of PVD (physical vapour deposition (PVD)) technique.
Tantalum (Ta), metallic element are primarily present in tantalite, with niobium symbiosis.The hardness of tantalum is moderate, rich in ductility,
Filament formula thin foil can be pulled into.Its coefficient of thermal expansion very little often increases one degree Celsius of only expansion 6/1000000ths. six.Except this
Except, its toughness is very strong, also more excellent than copper.Tantalum has very outstanding chemical property, can stablize in Surface Creation
Tantalum pentoxide (Ta2O5) protective film, to have high corrosion resistance, either under conditions of cold and hot, to hydrochloric acid,
Concentrated nitric acid and " chloroazotic acid " do not react.Evaporator boat etc. is may be utilized in fabricating, the electrode, rectifier, electrolysis electricity of electron tube can be also done
Hold.Medically it is used for laminating or filament, the tissue of destruction sews and mend.Based on above-mentioned property, it is excellent that tantalum is that a kind of property has, and answers
With extensive target material.But be currently used in the technology of processing tantalum target, turning extruded layer can be generated in target material surface,
Influence the uniformity of sputtering process.And turning extruded layer is removed, reach sputtering use demand, then needs through follow-up 40min
The grinding of left and right, expends a large amount of cost of labor and time cost.
Invention content
It is easy to operate the purpose of the present invention is to provide a kind of method for turning of high-purity tantalum target, equipment is wanted
Ask not high.Target material surface better quality after processing can preferably meet the needs of sputtering uses；Meanwhile for blade
Loss it is smaller, be conducive to reduce production cost.
What the embodiment of the present invention was realized in：
A kind of method for turning of high-purity tantalum target comprising：
Turning is carried out to high-purity tantalum target；In turning process, blade along high-purity tantalum target diametric(al) towards high-purity included a tantalum target
Material is centrally fed, and turning speed is 250~300m/min.
The advantageous effect of the embodiment of the present invention is：
An embodiment of the present invention provides a kind of method for turning of high-purity tantalum target, use blade along high-purity tantalum target
Diametric(al) towards the processing method of high-purity tantalum target being centrally fed, and stringent restriction has been carried out to turning speed.The vehicle
The easy to operate of processing method is cut, it is not high to equipment requirement.It is found by inventor's creative work, for tantalum target, works as vehicle
When cutting speed and being limited to 250~300m/min, the high-purity tantalum target surface quality after processing is preferable, can preferably avoid protrusion,
The appearance of the surface defects such as pit and turning extruded layer.In addition, under above-mentioned turning speed, it is smaller for the loss of blade,
While saving blade, the time of more allowing blade replacement is also ad save, is more favorable for reducing production cost.
Specific implementation mode
It in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be in the embodiment of the present invention
Technical solution be clearly and completely described.The person that is not specified actual conditions in embodiment, builds according to normal condition or manufacturer
The condition of view carries out.Reagents or instruments used without specified manufacturer is the conventional production that can be obtained by commercially available purchase
Product.
A kind of method for turning of high-purity tantalum target of the embodiment of the present invention is specifically described below.
An embodiment of the present invention provides a kind of method for turning of high-purity tantalum target comprising：
Turning is carried out to high-purity tantalum target；In turning process, blade along high-purity tantalum target diametric(al) towards high-purity included a tantalum target
Material is centrally fed, and turning speed is 250~300m/min.
Sputtering target material is mainly used in electronics and information industry, such as integrated circuit, information storage, liquid crystal display, laser
Memory, electronic control device etc.；It is equally applicable for coating film on glass field；Can also be applied to wear-resistant material, high temperature is anti-corrosion, high
The industries such as shelves adornment.It is the indispensable consumable material of PVD process.The process of PVD process is under vacuum, to use
Low-voltage, the arc-discharge technique of high current make target evaporate and make to be evaporated substance and gas all to occur using gas discharge
Ionization, using the acceleration of electric field, makes to be evaporated substance and its reaction product is deposited on workpiece.Therefore, for target
Surface property it is more demanding.
Common target is cylinder, and 200~1000mm of diameter range is differed.The embodiment of the present invention is for high-purity tantalum target
Turnery processing be to be rotated along its axis using by high-purity tantalum target, blade along high-purity tantalum target diametric(al) towards high-purity included a tantalum target
The mode of material being centrally fed is cut.Inventor is by the discovery of a large amount of creative works, turning speed namely blade and height
When the linear velocity in pure tantalum target contact site is 250~300m/min, the surface quality of high-purity tantalum target is preferable.Linear velocity is excessive
Or it is too small, all high-purity tantalum target can be caused the surface defects such as salient point, pit occur.
Further, include rough turning and finish turning to the turning process of high-purity tantalum target, wherein the bite of rough turning
Bite for 0.13~0.17mm, finish turning is 0.03~0.07mm.Bite is that the surface before high-purity tantalum target processing is arrived
The distance of rear surface is processed, for example, thickness is the high-purity tantalum target of 10mm, in the case that bite is 0.15mm, after turning
Thickness becomes 9.85mm.Suitable bite can eliminate the surface defect of former high-purity tantalum target, by inventor's creativeness labor
Dynamic to find, in rough turning, control bite is 0.13~0.17mm, and in finish turning, control bite is preferably to cut
Except the surface defect of former high-purity tantalum target, preferable surface quality is obtained.When bite is too small, surface defect is eliminated endless
Entirely, when bite is excessive, it will cause the excessive loss of high-purity tantalum target.
Further, in embodiments of the present invention, the material of blade is hard alloy, it is preferable that the model of blade
CCGX120404H10。
Preferably, the feed speed of blade is 0.1~0.3mm/min.The feed speed of blade is blade along high-purity included a tantalum target
The speed of the diametric(al) operation of material, feed speed is excessive to be easy to cause high-purity tantalum target poor surface quality, meanwhile, to blade
Abrasion it is even more serious.It is found by inventor's creative work, the feed speed of blade is controlled in 0.1~0.3mm/min, vehicle
The effect cut is preferable, and blade is saved while obtaining preferable surface quality.
To in the turning process of high-purity tantalum target, being rinsed cooling using a concentration of 5%~10% cutting fluid, preferably
Ground, cutting fluid are to add 3380 cutting fluid of moral scholar.Cutting fluid can play the role of cooling and lubricate, and reduce surface in turning process
The appearance of defect reduces the loss of blade.Preferably, it smears high-purity tantalum target using lard to be lubricated, it is preferable that lard
Smearing thickness is 0.03~0.08mm.Lard can further increase lubricant effect, reduce blade abrasion.
The embodiment of the present invention is in the turning process to high-purity tantalum target, rotating speed≤650r/min of turning lathe.It is cutting
In the case of cutting speed (linear velocity) centainly, blade is closer to the center of high-purity tantalum target, and required rotating speed (angular speed) is more
It is high.For theoretically, when blade reaches the central point of high-purity tantalum target, rotating speed reaches infinite height.But in fact, due to equipment
Limitation, the rotating speed of infinite height cannot achieve.Inventor has found by creative work, in order to ensure that equipment has the stabilization of blade
The clamping of effect, rotating speed≤650r/min of turning lathe.
Further, since there is the limitations of rotating speed≤650r/min, when turning proceeds to blade away from high-purity tantalum target
When 70~80mm of center, cutting speed starts to reduce, and is detached from the velocity interval required by the application, at this point, the surface of processing
Quality starts to deteriorate, and further decreasing with cutting speed, and this deterioration also has the trend aggravated.For this
Situation, inventor are gradually reduced bite, make high-purity since turning proceeds to blade away from 70~80mm of high-purity tantalum target center
The surface of tantalum target forms a cone, it is preferable that the center thickness of cone is 0.04~0.06mm.After the completion of turning,
Cone is removed by polishing.By the setting of cone, in the position closer to tantalum target center, more than more processing
Amount, to cope with the surface quality deteriorated further so that the overall surface quality of high-purity tantalum target is ensured after processing.
The surface roughness Ra that the high-purity tantalum target after turnery processing is carried out by the above method is 0.3~0.7mm, and existing
There is technology to increase significantly compared to tool, and problem the defects of surface is without salient point, pit.Meanwhile the method for turning for
The loss of blade is smaller, and the prior art needs the processing capacity that 4 blades are completed, and only 1 blade is needed to can be completed, blade is saved
75%, eliminate the time cost and material, human cost for frequently replacing blade strip.
The feature and performance of the present invention are described in further detail with reference to embodiments.
Embodiment 1
The present embodiment provides a kind of method for turning of high-purity tantalum target comprising：
Using the high-purity tantalum target of diameter 500mm, rough turning and finish turning are carried out to it；In turning process, high-purity included a tantalum target
Material is rotatable around its axis, diametric(al) being centrally fed towards high-purity tantalum target of the blade along high-purity tantalum target.When turning, use
5% cutting fluid is rinsed cooling.And the lard for smearing 0.03~0.08mm thickness is lubricated.
When turning proceeds to blade away from the high-purity tantalum target center 75mm, it is gradually reduced bite, is made high-purity
The surface of tantalum target forms a cone, and the center thickness of cone is 0.05mm.After turning, circular cone is removed by polishing
Body.
Wherein, specific Cutting parameters setting is as follows：
Blade model：CCGX120404H10
Turning speed：275m/min；
The bite of rough turning：0.15mm；
The bite of finish turning：0.05mm；
The feed speed of blade：0.1mm/min；
Lathe maximum speed：650r/min；
After testing, the high-purity tantalum target after the method for turning processing provided through this embodiment, surface roughness
Ra reaches 0.46mm.Whole process is once completed, midway not more allowing blade replacement.
Embodiment 2
The present embodiment provides a kind of method for turning of high-purity tantalum target comprising：
Using the high-purity tantalum target of diameter 300mm, rough turning and finish turning are carried out to it；In turning process, high-purity included a tantalum target
Material is rotatable around its axis, diametric(al) being centrally fed towards high-purity tantalum target of the blade along high-purity tantalum target.When turning, use
5% cutting fluid is rinsed cooling.And the lard for smearing 0.03~0.08mm thickness is lubricated.
When turning proceeds to blade away from the high-purity tantalum target center 70mm, it is gradually reduced bite, is made high-purity
The surface of tantalum target forms a cone, and the center thickness of cone is 0.06mm.After turning, circular cone is removed by polishing
Body.
Wherein, specific Cutting parameters setting is as follows：
Blade model：CCGX120404H10
Turning speed：250m/min；
The bite of rough turning：0.17mm；
The bite of finish turning：0.03mm；
The feed speed of blade：0.3mm/min；
Lathe maximum speed：600r/min；
After testing, the high-purity tantalum target after the method for turning processing provided through this embodiment, surface roughness
Ra reaches 0.37mm.Whole process is once completed, midway not more allowing blade replacement.
Embodiment 3
The present embodiment provides a kind of method for turning of high-purity tantalum target comprising：
Using the high-purity tantalum target of diameter 1000mm, rough turning and finish turning are carried out to it；In turning process, high-purity included a tantalum target
Material is rotatable around its axis, diametric(al) being centrally fed towards high-purity tantalum target of the blade along high-purity tantalum target.When turning, use
5% cutting fluid is rinsed cooling.And the lard for smearing 0.03~0.08mm thickness is lubricated.
When turning proceeds to blade away from the high-purity tantalum target center 80mm, it is gradually reduced bite, is made high-purity
The surface of tantalum target forms a cone, and the center thickness of cone is 0.04mm.After turning, circular cone is removed by polishing
Body.
Wherein, specific Cutting parameters setting is as follows：
Blade model：CCGX120404H10
Turning speed：300m/min；
The bite of rough turning：0.13mm；
The bite of finish turning：0.07mm；
The feed speed of blade：0.2mm/min；
Lathe maximum speed：630r/min；
After testing, the high-purity tantalum target after the method for turning processing provided through this embodiment, surface roughness
Ra reaches 0.58mm.Whole process is once completed, midway not more allowing blade replacement.
Embodiment 4
The present embodiment provides a kind of method for turning of high-purity tantalum target comprising：
Using the high-purity tantalum target of diameter 600mm, rough turning and finish turning are carried out to it；In turning process, high-purity included a tantalum target
Material is rotatable around its axis, diametric(al) being centrally fed towards high-purity tantalum target of the blade along high-purity tantalum target.When turning, use
10% cutting fluid is rinsed cooling.And the lard for smearing 0.03~0.08mm thickness is lubricated.
When turning proceeds to blade away from the high-purity tantalum target center 70mm, it is gradually reduced bite, is made high-purity
The surface of tantalum target forms a cone, and the center thickness of cone is 0.055mm.After turning, pass through removal circle of polishing
Cone.
Wherein, specific Cutting parameters setting is as follows：
Blade model：CCGX120404H10
Turning speed：280m/min；
The bite of rough turning：0.15mm；
The bite of finish turning：0.06mm；
The feed speed of blade：0.3mm/min；
Lathe maximum speed：600r/min；
After testing, the high-purity tantalum target after the method for turning processing provided through this embodiment, surface roughness
Ra reaches 0.61mm.Whole process is once completed, midway not more allowing blade replacement.
In conclusion an embodiment of the present invention provides a kind of method for turning of high-purity tantalum target, blade edge is used
The diametric(al) of high-purity tantalum target and has carried out turning speed stringent towards the processing method of high-purity tantalum target being centrally fed
It limits.The method for turning it is easy to operate, it is not high to equipment requirement.It is found by inventor's creative work, for tantalum
Target, when turning speed is limited to 250~300m/min, the high-purity tantalum target surface quality after processing is preferable, can be preferable
Avoid the appearance of the surface defects such as protrusion, pit and turning extruded layer.In addition, under above-mentioned turning speed, for blade
Loss is smaller, while saving blade, also as save the time of more allowing blade replacement, is more favorable for reducing production cost.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of method for turning of high-purity tantalum target, which is characterized in that including：
Turning is carried out to the high-purity tantalum target；In turning process, blade along the high-purity tantalum target diametric(al) towards described
High-purity tantalum target is centrally fed, and turning speed is 250~300m/min.
2. method for turning according to claim 1, which is characterized in that the turning process packet of the high-purity tantalum target
Including rough turning and finish turning, wherein the bite of rough turning is 0.13~0.17mm, the bite of finish turning is 0.03~
0.07mm。
3. method for turning according to claim 1, which is characterized in that the feed speed of blade is 0.1~0.3mm/
min。
4. method for turning according to claim 1, which is characterized in that the turning process of the high-purity tantalum target
In, cooling is rinsed using a concentration of 5%~10% cutting fluid, it is preferable that the cutting fluid is plus moral scholar 3380 cuts
Liquid.
5. method for turning according to claim 4, which is characterized in that the turning process of the high-purity tantalum target
In, the high-purity tantalum target is smeared using lard and is lubricated, it is preferable that the smearing thickness of lard is 0.03~0.08mm.
6. method for turning according to claim 1, which is characterized in that the turning process of the high-purity tantalum target
In, rotating speed≤650r/min of turning lathe.
7. method for turning according to claim 6, which is characterized in that when turning proceeds to the blade away from the height
When pure 70~80mm of tantalum target center, it is gradually reduced bite, the surface of the high-purity tantalum target is made to form a cone,
Preferably, the center thickness of the cone is 0.04~0.06mm.
8. method for turning according to claim 7, which is characterized in that after the completion of turning, by polishing described in removing
Cone.
9. method for turning according to claim 1, which is characterized in that the material of the blade is hard alloy, excellent
Selection of land, the model CCGX120404H10 of the blade.
10. method for turning according to claim 1, which is characterized in that the high-purity tantalum target after turnery processing
Surface roughness Ra be 0.3~0.7mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810851251.9A CN108672720A (en) | 2018-07-27 | 2018-07-27 | A kind of method for turning of high-purity tantalum target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810851251.9A CN108672720A (en) | 2018-07-27 | 2018-07-27 | A kind of method for turning of high-purity tantalum target |
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| Publication Number | Publication Date |
|---|---|
| CN108672720A true CN108672720A (en) | 2018-10-19 |
Family
ID=63816174
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810851251.9A Pending CN108672720A (en) | 2018-07-27 | 2018-07-27 | A kind of method for turning of high-purity tantalum target |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411333A (en) * | 2020-05-11 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Method for improving coating uniformity of target material |
| CN112828541A (en) * | 2021-01-04 | 2021-05-25 | 宁波江丰电子材料股份有限公司 | Tantalum target material and processing method of sputtering surface thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591768A (en) * | 2009-07-07 | 2009-12-02 | 宁波江丰电子材料有限公司 | The making method of target |
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN104668883A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Processing method of target module sputtering surface |
| CN106270555A (en) * | 2015-05-25 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The processing method of screw thread, the manufacture method of target material assembly and target material assembly |
-
2018
- 2018-07-27 CN CN201810851251.9A patent/CN108672720A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591768A (en) * | 2009-07-07 | 2009-12-02 | 宁波江丰电子材料有限公司 | The making method of target |
| CN102501045A (en) * | 2011-10-20 | 2012-06-20 | 宁波江丰电子材料有限公司 | Method and device for processing nickel target component |
| CN104668883A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Processing method of target module sputtering surface |
| CN106270555A (en) * | 2015-05-25 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | The processing method of screw thread, the manufacture method of target material assembly and target material assembly |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111411333A (en) * | 2020-05-11 | 2020-07-14 | 宁波江丰电子材料股份有限公司 | Method for improving coating uniformity of target material |
| CN112828541A (en) * | 2021-01-04 | 2021-05-25 | 宁波江丰电子材料股份有限公司 | Tantalum target material and processing method of sputtering surface thereof |
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