TWI316272B - Method for controlling polysilicon removal - Google Patents

Method for controlling polysilicon removal

Info

Publication number
TWI316272B
TWI316272B TW095136031A TW95136031A TWI316272B TW I316272 B TWI316272 B TW I316272B TW 095136031 A TW095136031 A TW 095136031A TW 95136031 A TW95136031 A TW 95136031A TW I316272 B TWI316272 B TW I316272B
Authority
TW
Taiwan
Prior art keywords
polysilicon removal
controlling polysilicon
controlling
removal
polysilicon
Prior art date
Application number
TW095136031A
Other languages
Chinese (zh)
Other versions
TW200731383A (en
Inventor
Jeffrey Dysard
Timothy Johns
Paul Feeney
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200731383A publication Critical patent/TW200731383A/en
Application granted granted Critical
Publication of TWI316272B publication Critical patent/TWI316272B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095136031A 2005-10-04 2006-09-28 Method for controlling polysilicon removal TWI316272B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/243,140 US20070077865A1 (en) 2005-10-04 2005-10-04 Method for controlling polysilicon removal

Publications (2)

Publication Number Publication Date
TW200731383A TW200731383A (en) 2007-08-16
TWI316272B true TWI316272B (en) 2009-10-21

Family

ID=37499658

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136031A TWI316272B (en) 2005-10-04 2006-09-28 Method for controlling polysilicon removal

Country Status (6)

Country Link
US (1) US20070077865A1 (en)
JP (1) JP5689581B2 (en)
KR (1) KR101165875B1 (en)
CN (1) CN101322227B (en)
TW (1) TWI316272B (en)
WO (1) WO2007041203A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
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US9337103B2 (en) * 2012-12-07 2016-05-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for removing hard mask oxide and making gate structure of semiconductor devices
CN103865400A (en) * 2012-12-10 2014-06-18 安集微电子（上海）有限公司 Application of organic phosphate surfactant in self-stopping polishing
JP6209845B2 (en) * 2013-04-11 2017-10-11 日立化成株式会社 Polishing liquid, polishing liquid set, and substrate polishing method
US9567492B2 (en) * 2014-08-28 2017-02-14 Sinmat, Inc. Polishing of hard substrates with soft-core composite particles
US10836856B2 (en) 2015-01-05 2020-11-17 Rhodia Operations Amine-imino dialcohol neutralizing agents for low volatile compound aqueous organic coating compositions and methods for using same
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KR102694174B1 (en) * 2018-10-01 2024-08-13 솔브레인 주식회사 Chemical-mechanical polishing slurry composition for polishing low temperature polysilicon hillock and low temperature polysilicon hillock polishing method using the same
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US10626298B1 (en) * 2019-03-20 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
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IT201900006740A1 (en) 2019-05-10 2020-11-10 Applied Materials Inc SUBSTRATE STRUCTURING PROCEDURES
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
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Publication number Priority date Publication date Assignee Title
TWI583755B (en) * 2010-12-10 2017-05-21 巴斯夫歐洲公司 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

Also Published As

Publication number Publication date
KR101165875B1 (en) 2012-07-13
WO2007041203A1 (en) 2007-04-12
CN101322227A (en) 2008-12-10
JP2009510797A (en) 2009-03-12
TW200731383A (en) 2007-08-16
CN101322227B (en) 2010-12-01
JP5689581B2 (en) 2015-03-25
US20070077865A1 (en) 2007-04-05
KR20080064823A (en) 2008-07-09

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