JP2017505532A5 - - Google Patents
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- Publication number
- JP2017505532A5 JP2017505532A5 JP2016536711A JP2016536711A JP2017505532A5 JP 2017505532 A5 JP2017505532 A5 JP 2017505532A5 JP 2016536711 A JP2016536711 A JP 2016536711A JP 2016536711 A JP2016536711 A JP 2016536711A JP 2017505532 A5 JP2017505532 A5 JP 2017505532A5
- Authority
- JP
- Japan
- Prior art keywords
- cationic polymer
- composition
- cmp composition
- cmp
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920006317 cationic polymer Polymers 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000002245 particle Substances 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229920001519 homopolymer Polymers 0.000 claims 4
- 238000005498 polishing Methods 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- VPNMTSAIINVZTK-UHFFFAOYSA-N 1-ethenyl-3-methylimidazol-3-ium Chemical compound C[N+]=1C=CN(C=C)C=1 VPNMTSAIINVZTK-UHFFFAOYSA-N 0.000 claims 2
- DTJIKSRARSRPBU-UHFFFAOYSA-N 2-ethenyl-1-methylpyridin-1-ium Chemical compound C[N+]1=CC=CC=C1C=C DTJIKSRARSRPBU-UHFFFAOYSA-N 0.000 claims 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- 150000004820 halides Chemical class 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 150000005451 methyl sulfates Chemical class 0.000 claims 2
- 150000002823 nitrates Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000008365 aqueous carrier Substances 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/100,339 | 2013-12-09 | ||
| US14/100,339 US9850402B2 (en) | 2013-12-09 | 2013-12-09 | CMP compositions and methods for selective removal of silicon nitride |
| PCT/US2014/068524 WO2015088871A1 (en) | 2013-12-09 | 2014-12-04 | Cmp compositions and methods for selective removal of silicon nitride |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017505532A JP2017505532A (ja) | 2017-02-16 |
| JP2017505532A5 true JP2017505532A5 (enExample) | 2018-01-11 |
| JP6530401B2 JP6530401B2 (ja) | 2019-06-12 |
Family
ID=53270508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016536711A Active JP6530401B2 (ja) | 2013-12-09 | 2014-12-04 | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9850402B2 (enExample) |
| JP (1) | JP6530401B2 (enExample) |
| KR (1) | KR102307728B1 (enExample) |
| CN (1) | CN105814668B (enExample) |
| TW (1) | TWI546372B (enExample) |
| WO (1) | WO2015088871A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| KR102295988B1 (ko) | 2014-10-17 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성 |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US9597768B1 (en) | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| KR102609439B1 (ko) | 2015-10-30 | 2023-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
| KR102226055B1 (ko) * | 2016-08-26 | 2021-03-10 | 페로 코포레이션 | 슬러리 조성물 및 선택적인 실리카 연마 방법 |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| US10584266B2 (en) | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| JP6962247B2 (ja) * | 2018-03-14 | 2021-11-05 | Jsr株式会社 | 半導体表面処理用組成物および半導体表面処理方法 |
| WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
| US12227673B2 (en) * | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
| US12281251B2 (en) | 2019-09-30 | 2025-04-22 | Versum Materials Us, Llc | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
| WO2021067150A1 (en) * | 2019-09-30 | 2021-04-08 | Versum Materials Us, Llc | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
| JP2022553347A (ja) | 2019-10-22 | 2022-12-22 | シーエムシー マテリアルズ，インコーポレイティド | 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法 |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| JP7778621B2 (ja) | 2021-03-31 | 2025-12-02 | 株式会社フジミインコーポレーテッド | 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法 |
| KR20220153788A (ko) * | 2021-05-12 | 2022-11-21 | 성균관대학교산학협력단 | 무기 입자를 포함하는 수분산액 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970042941A (ko) * | 1995-12-29 | 1997-07-26 | 베일리 웨인 피 | 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물 |
| US7044836B2 (en) * | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| KR101395542B1 (ko) * | 2006-05-02 | 2014-05-14 | 캐보트 마이크로일렉트로닉스 코포레이션 | 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법 |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| US20090047870A1 (en) | 2007-08-16 | 2009-02-19 | Dupont Air Products Nanomaterials Llc | Reverse Shallow Trench Isolation Process |
| JP5333222B2 (ja) * | 2007-09-21 | 2013-11-06 | 日立化成株式会社 | シリコン膜研磨用ｃｍｐスラリー及び研磨方法 |
| WO2010033156A2 (en) * | 2008-09-19 | 2010-03-25 | Cabot Microelectronics Corporation | Barrier slurry for low-k dielectrics |
| KR101678114B1 (ko) * | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법 |
| US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
| US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| SG11201407168PA (en) * | 2012-05-07 | 2014-11-27 | Basf Se | Process for manufacture of semiconductor devices |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
-
2013
- 2013-12-09 US US14/100,339 patent/US9850402B2/en active Active
-
2014
- 2014-12-04 KR KR1020167018177A patent/KR102307728B1/ko active Active
- 2014-12-04 JP JP2016536711A patent/JP6530401B2/ja active Active
- 2014-12-04 WO PCT/US2014/068524 patent/WO2015088871A1/en not_active Ceased
- 2014-12-04 CN CN201480067424.8A patent/CN105814668B/zh active Active
- 2014-12-04 TW TW103142219A patent/TWI546372B/zh active
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