JP2017505532A5 - - Google Patents
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- Publication number
- JP2017505532A5 JP2017505532A5 JP2016536711A JP2016536711A JP2017505532A5 JP 2017505532 A5 JP2017505532 A5 JP 2017505532A5 JP 2016536711 A JP2016536711 A JP 2016536711A JP 2016536711 A JP2016536711 A JP 2016536711A JP 2017505532 A5 JP2017505532 A5 JP 2017505532A5
- Authority
- JP
- Japan
- Prior art keywords
- cationic polymer
- composition
- cmp composition
- cmp
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229920006317 cationic polymer Polymers 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000002245 particle Substances 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229920001519 homopolymer Polymers 0.000 claims 4
- 238000005498 polishing Methods 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- VPNMTSAIINVZTK-UHFFFAOYSA-N 1-ethenyl-3-methylimidazol-3-ium Chemical compound C[N+]=1C=CN(C=C)C=1 VPNMTSAIINVZTK-UHFFFAOYSA-N 0.000 claims 2
- DTJIKSRARSRPBU-UHFFFAOYSA-N 2-ethenyl-1-methylpyridin-1-ium Chemical compound C[N+]1=CC=CC=C1C=C DTJIKSRARSRPBU-UHFFFAOYSA-N 0.000 claims 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- 150000004820 halides Chemical class 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 150000005451 methyl sulfates Chemical class 0.000 claims 2
- 150000002823 nitrates Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000008365 aqueous carrier Substances 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/100,339 US9850402B2 (en) | 2013-12-09 | 2013-12-09 | CMP compositions and methods for selective removal of silicon nitride |
| US14/100,339 | 2013-12-09 | ||
| PCT/US2014/068524 WO2015088871A1 (en) | 2013-12-09 | 2014-12-04 | Cmp compositions and methods for selective removal of silicon nitride |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017505532A JP2017505532A (ja) | 2017-02-16 |
| JP2017505532A5 true JP2017505532A5 (enExample) | 2018-01-11 |
| JP6530401B2 JP6530401B2 (ja) | 2019-06-12 |
Family
ID=53270508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016536711A Active JP6530401B2 (ja) | 2013-12-09 | 2014-12-04 | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9850402B2 (enExample) |
| JP (1) | JP6530401B2 (enExample) |
| KR (1) | KR102307728B1 (enExample) |
| CN (1) | CN105814668B (enExample) |
| TW (1) | TWI546372B (enExample) |
| WO (1) | WO2015088871A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| KR102295988B1 (ko) | 2014-10-17 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성 |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| US9597768B1 (en) | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| CN113103145B (zh) | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| KR101827366B1 (ko) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 조성물 |
| SG11201900141UA (en) * | 2016-08-26 | 2019-03-28 | Ferro Corp | Slurry composition and method of selective silica polishing |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| JP6962247B2 (ja) * | 2018-03-14 | 2021-11-05 | Jsr株式会社 | 半導体表面処理用組成物および半導体表面処理方法 |
| WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
| US12227673B2 (en) * | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
| US12281251B2 (en) | 2019-09-30 | 2025-04-22 | Versum Materials Us, Llc | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
| TWI864116B (zh) * | 2019-09-30 | 2024-12-01 | 美商慧盛材料美國有限責任公司 | 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 |
| KR20220087492A (ko) | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법 |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| JP7778621B2 (ja) | 2021-03-31 | 2025-12-02 | 株式会社フジミインコーポレーテッド | 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法 |
| KR20220153788A (ko) * | 2021-05-12 | 2022-11-21 | 성균관대학교산학협력단 | 무기 입자를 포함하는 수분산액 |
| US20230242790A1 (en) * | 2022-02-03 | 2023-08-03 | Cmc Materials, Inc. | Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970042941A (ko) * | 1995-12-29 | 1997-07-26 | 베일리 웨인 피 | 기계적 화학적 폴리싱 공정을 위한 폴리싱 합성물 |
| US7044836B2 (en) * | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| WO2007130350A1 (en) * | 2006-05-02 | 2007-11-15 | Cabot Microelectronics Corporation | Compositions and methods for cmp of semiconductor materials |
| US20080105652A1 (en) * | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| US20090047870A1 (en) | 2007-08-16 | 2009-02-19 | Dupont Air Products Nanomaterials Llc | Reverse Shallow Trench Isolation Process |
| US8778803B2 (en) * | 2007-09-21 | 2014-07-15 | Hitachi Chemical Company, Ltd. | CPM slurry for silicon film polishing and polishing method |
| MY150487A (en) * | 2008-09-19 | 2014-01-30 | Cabot Microelectronics Corp | Barrier slurry for low-k dielectrics. |
| JP5632378B2 (ja) | 2008-09-26 | 2014-11-26 | ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ | 化学機械研磨用研磨剤組成物及びその使用法 |
| US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
| US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| EP2847785A4 (en) * | 2012-05-07 | 2016-03-16 | Basf Se | METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
-
2013
- 2013-12-09 US US14/100,339 patent/US9850402B2/en active Active
-
2014
- 2014-12-04 WO PCT/US2014/068524 patent/WO2015088871A1/en not_active Ceased
- 2014-12-04 KR KR1020167018177A patent/KR102307728B1/ko active Active
- 2014-12-04 CN CN201480067424.8A patent/CN105814668B/zh active Active
- 2014-12-04 JP JP2016536711A patent/JP6530401B2/ja active Active
- 2014-12-04 TW TW103142219A patent/TWI546372B/zh active
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