JP2018513229A5 - - Google Patents
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- Publication number
- JP2018513229A5 JP2018513229A5 JP2017546682A JP2017546682A JP2018513229A5 JP 2018513229 A5 JP2018513229 A5 JP 2018513229A5 JP 2017546682 A JP2017546682 A JP 2017546682A JP 2017546682 A JP2017546682 A JP 2017546682A JP 2018513229 A5 JP2018513229 A5 JP 2018513229A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- chemical mechanical
- mechanical polishing
- functionalized
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 51
- 239000000126 substance Substances 0.000 claims 25
- 239000002245 particle Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 11
- 125000000623 heterocyclic group Chemical group 0.000 claims 10
- 150000001735 carboxylic acids Chemical class 0.000 claims 7
- 229920006317 cationic polymer Polymers 0.000 claims 7
- 125000002091 cationic group Chemical group 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 3
- OSSNTDFYBPYIEC-UHFFFAOYSA-O 1-ethenylimidazole;hydron Chemical compound C=CN1C=C[NH+]=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-O 0.000 claims 2
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- -1 alcohol amines Chemical class 0.000 claims 2
- 239000008365 aqueous carrier Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical group OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical group 0.000 claims 1
- 150000001412 amines Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- 229920002678 cellulose Polymers 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical group C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/639,598 US9758697B2 (en) | 2015-03-05 | 2015-03-05 | Polishing composition containing cationic polymer additive |
| US14/639,598 | 2015-03-05 | ||
| PCT/US2016/020807 WO2016141259A1 (en) | 2015-03-05 | 2016-03-04 | Polishing composition containing cationic polymer additive |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018513229A JP2018513229A (ja) | 2018-05-24 |
| JP2018513229A5 true JP2018513229A5 (enExample) | 2019-03-28 |
| JP6799000B2 JP6799000B2 (ja) | 2020-12-09 |
Family
ID=56848223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017546682A Active JP6799000B2 (ja) | 2015-03-05 | 2016-03-04 | カチオン性ポリマー添加剤を含む研磨組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9758697B2 (enExample) |
| EP (1) | EP3265525B1 (enExample) |
| JP (1) | JP6799000B2 (enExample) |
| KR (3) | KR102859558B1 (enExample) |
| CN (1) | CN107429120B (enExample) |
| TW (1) | TWI580770B (enExample) |
| WO (1) | WO2016141259A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3408342B1 (en) * | 2016-01-25 | 2024-03-06 | CMC Materials LLC | Polishing composition comprising cationic polymer additive |
| CN108117839B (zh) | 2016-11-29 | 2021-09-17 | 安集微电子科技（上海）股份有限公司 | 一种具有高氮化硅选择性的化学机械抛光液 |
| CN110520493B (zh) * | 2017-04-17 | 2022-11-22 | Cmc材料股份有限公司 | 自停止性抛光组合物及用于块状氧化物平坦化的方法 |
| WO2018229005A1 (en) | 2017-06-15 | 2018-12-20 | Rhodia Operations | Cerium based particles |
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251676B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251674B (zh) * | 2017-07-13 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251673A (zh) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN107932199A (zh) * | 2017-12-11 | 2018-04-20 | 浙江三瑞铜业有限公司 | 一种金属工件的抛光方法 |
| CN108048844A (zh) * | 2017-12-11 | 2018-05-18 | 浙江三瑞铜业有限公司 | 一种金属抛光方法 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| JP7220522B2 (ja) * | 2018-05-24 | 2023-02-10 | 株式会社バイコウスキージャパン | 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法 |
| JP7330676B2 (ja) * | 2018-08-09 | 2023-08-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物 |
| KR20220083728A (ko) * | 2019-10-15 | 2022-06-20 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 연마 조성물 및 이의 사용 방법 |
| KR20220087492A (ko) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | 실리콘 산화물보다 실리콘 질화물 및 폴리실리콘에 대해 높은 선택성을 갖는 연마 조성물 및 방법 |
| TWI857165B (zh) | 2019-10-22 | 2024-10-01 | 美商Ｃｍｃ材料有限責任公司 | 用於選擇性化學機械拋光氧化物之組合物及方法 |
| CN114599754B (zh) | 2019-11-26 | 2024-09-13 | 罗地亚经营管理公司 | 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途 |
| IL308442A (en) | 2021-05-17 | 2024-01-01 | Rhodia Operations | Liquid and powder dispersion of cerium-based shell-core particles, a process for their production and their uses in polishing |
| KR20240062238A (ko) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| WO2025132262A1 (en) | 2023-12-21 | 2025-06-26 | Rhodia Operations | Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing |
| WO2025190482A1 (en) | 2024-03-13 | 2025-09-18 | Rhodia Operations | Cerium oxide particles with cotrolled microstructure |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872533A (en) | 1997-06-24 | 1999-02-16 | Cypress Semiconductor Corp. | Circuit and architecture for providing an interface between components |
| EP1369906B1 (en) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polishing compound and method for polishing substrate |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6638328B1 (en) * | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| TWI334882B (en) | 2004-03-12 | 2010-12-21 | K C Tech Co Ltd | Polishing slurry and method of producing same |
| US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| TWI437083B (zh) * | 2006-07-28 | 2014-05-11 | Showa Denko Kk | 研磨組成物 |
| JP2009094233A (ja) | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
| KR101250090B1 (ko) | 2008-04-23 | 2013-04-03 | 히타치가세이가부시끼가이샤 | 연마제 및 이 연마제를 이용한 기판의 연마방법 |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| KR101191427B1 (ko) * | 2009-11-25 | 2012-10-16 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 조성물 및 이의 제조방법 |
| JP2012146976A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| SG11201405091TA (en) | 2012-02-21 | 2014-09-26 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
-
2015
- 2015-03-05 US US14/639,598 patent/US9758697B2/en active Active
-
2016
- 2016-03-04 KR KR1020257011315A patent/KR102859558B1/ko active Active
- 2016-03-04 TW TW105106811A patent/TWI580770B/zh active
- 2016-03-04 WO PCT/US2016/020807 patent/WO2016141259A1/en not_active Ceased
- 2016-03-04 CN CN201680013850.2A patent/CN107429120B/zh active Active
- 2016-03-04 KR KR1020247011934A patent/KR102889330B1/ko active Active
- 2016-03-04 EP EP16759548.7A patent/EP3265525B1/en active Active
- 2016-03-04 KR KR1020177027605A patent/KR20170126960A/ko not_active Ceased
- 2016-03-04 JP JP2017546682A patent/JP6799000B2/ja active Active
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