JP2018513229A5 - - Google Patents
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- Publication number
- JP2018513229A5 JP2018513229A5 JP2017546682A JP2017546682A JP2018513229A5 JP 2018513229 A5 JP2018513229 A5 JP 2018513229A5 JP 2017546682 A JP2017546682 A JP 2017546682A JP 2017546682 A JP2017546682 A JP 2017546682A JP 2018513229 A5 JP2018513229 A5 JP 2018513229A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- chemical mechanical
- mechanical polishing
- functionalized
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 51
- 239000000126 substance Substances 0.000 claims 25
- 239000002245 particle Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 11
- 125000000623 heterocyclic group Chemical group 0.000 claims 10
- 150000001735 carboxylic acids Chemical class 0.000 claims 7
- 229920006317 cationic polymer Polymers 0.000 claims 7
- 125000002091 cationic group Chemical group 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 3
- OSSNTDFYBPYIEC-UHFFFAOYSA-O 1-ethenylimidazole;hydron Chemical compound C=CN1C=C[NH+]=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-O 0.000 claims 2
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- -1 alcohol amines Chemical class 0.000 claims 2
- 239000008365 aqueous carrier Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical group OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical group 0.000 claims 1
- 150000001412 amines Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- 229920002678 cellulose Polymers 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical group C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/639,598 US9758697B2 (en) | 2015-03-05 | 2015-03-05 | Polishing composition containing cationic polymer additive |
| US14/639,598 | 2015-03-05 | ||
| PCT/US2016/020807 WO2016141259A1 (en) | 2015-03-05 | 2016-03-04 | Polishing composition containing cationic polymer additive |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018513229A JP2018513229A (ja) | 2018-05-24 |
| JP2018513229A5 true JP2018513229A5 (enExample) | 2019-03-28 |
| JP6799000B2 JP6799000B2 (ja) | 2020-12-09 |
Family
ID=56848223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017546682A Active JP6799000B2 (ja) | 2015-03-05 | 2016-03-04 | カチオン性ポリマー添加剤を含む研磨組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9758697B2 (enExample) |
| EP (1) | EP3265525B1 (enExample) |
| JP (1) | JP6799000B2 (enExample) |
| KR (3) | KR102859558B1 (enExample) |
| CN (1) | CN107429120B (enExample) |
| TW (1) | TWI580770B (enExample) |
| WO (1) | WO2016141259A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102728543B1 (ko) * | 2016-01-25 | 2024-11-08 | 씨엠씨 머티리얼즈 엘엘씨 | 양이온성 중합체 첨가제를 포함하는 연마용 조성물 |
| CN108117839B (zh) | 2016-11-29 | 2021-09-17 | 安集微电子科技（上海）股份有限公司 | 一种具有高氮化硅选择性的化学机械抛光液 |
| WO2018194792A1 (en) * | 2017-04-17 | 2018-10-25 | Cabot Microelectronics Corporation | Self-stopping polishing composition and method for bulk oxide planarization |
| KR102539028B1 (ko) | 2017-06-15 | 2023-06-02 | 로디아 오퍼레이션스 | 세륨 기반 입자 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251676B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251675B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251674B (zh) * | 2017-07-13 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251673A (zh) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN108048844A (zh) * | 2017-12-11 | 2018-05-18 | 浙江三瑞铜业有限公司 | 一种金属抛光方法 |
| CN107932199A (zh) * | 2017-12-11 | 2018-04-20 | 浙江三瑞铜业有限公司 | 一种金属工件的抛光方法 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| JP7220522B2 (ja) * | 2018-05-24 | 2023-02-10 | 株式会社バイコウスキージャパン | 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法 |
| JP7330676B2 (ja) * | 2018-08-09 | 2023-08-22 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物 |
| KR20220083728A (ko) * | 2019-10-15 | 2022-06-20 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 연마 조성물 및 이의 사용 방법 |
| EP4048748B1 (en) | 2019-10-22 | 2026-05-06 | CMC Materials LLC | Composition and method for selective oxide cmp |
| JP2022553347A (ja) * | 2019-10-22 | 2022-12-22 | シーエムシー マテリアルズ，インコーポレイティド | 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法 |
| WO2021105169A1 (en) | 2019-11-26 | 2021-06-03 | Rhodia Operations | Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing |
| TWI920315B (zh) | 2021-05-17 | 2026-04-01 | 法商羅地亞經營管理公司 | 基於鈰的核－殼顆粒的液體分散體和粉末、其生產方法及其在拋光中之用途 |
| KR20240062238A (ko) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| CN122422452A (zh) | 2023-12-21 | 2026-07-17 | 罗地亚经营管理公司 | 包含其上吸附有多金属氧酸盐物质的氧化铈颗粒的水性分散体，其生产方法及其在抛光中的用途 |
| WO2025190482A1 (en) | 2024-03-13 | 2025-09-18 | Rhodia Operations | Cerium oxide particles with cotrolled microstructure |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872533A (en) | 1997-06-24 | 1999-02-16 | Cypress Semiconductor Corp. | Circuit and architecture for providing an interface between components |
| US6786945B2 (en) * | 2001-02-20 | 2004-09-07 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6638328B1 (en) * | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| TWI334882B (en) | 2004-03-12 | 2010-12-21 | K C Tech Co Ltd | Polishing slurry and method of producing same |
| US7247567B2 (en) * | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| TWI437083B (zh) * | 2006-07-28 | 2014-05-11 | 昭和電工股份有限公司 | 研磨組成物 |
| JP2009094233A (ja) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
| CN107199502A (zh) | 2008-04-23 | 2017-09-26 | 日立化成株式会社 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| KR101191427B1 (ko) * | 2009-11-25 | 2012-10-16 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 조성물 및 이의 제조방법 |
| JP2012146972A (ja) * | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| CN104137232A (zh) | 2012-02-21 | 2014-11-05 | 日立化成株式会社 | 研磨剂、研磨剂组和基体的研磨方法 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
-
2015
- 2015-03-05 US US14/639,598 patent/US9758697B2/en active Active
-
2016
- 2016-03-04 TW TW105106811A patent/TWI580770B/zh active
- 2016-03-04 KR KR1020257011315A patent/KR102859558B1/ko active Active
- 2016-03-04 WO PCT/US2016/020807 patent/WO2016141259A1/en not_active Ceased
- 2016-03-04 JP JP2017546682A patent/JP6799000B2/ja active Active
- 2016-03-04 EP EP16759548.7A patent/EP3265525B1/en active Active
- 2016-03-04 CN CN201680013850.2A patent/CN107429120B/zh active Active
- 2016-03-04 KR KR1020247011934A patent/KR102889330B1/ko active Active
- 2016-03-04 KR KR1020177027605A patent/KR20170126960A/ko not_active Ceased
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