JP6799000B2 - カチオン性ポリマー添加剤を含む研磨組成物 - Google Patents

カチオン性ポリマー添加剤を含む研磨組成物 Download PDF

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JP6799000B2
JP6799000B2 JP2017546682A JP2017546682A JP6799000B2 JP 6799000 B2 JP6799000 B2 JP 6799000B2 JP 2017546682 A JP2017546682 A JP 2017546682A JP 2017546682 A JP2017546682 A JP 2017546682A JP 6799000 B2 JP6799000 B2 JP 6799000B2
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polishing
polishing composition
ppm
weight
particles
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JP2018513229A5 (enExample
JP2018513229A (ja
Inventor
ライス ブライアン
ライス ブライアン
ソーター バン ネス ダーナ
ソーター バン ネス ダーナ
ベト ラム
ベト ラム
レンホー ジア
レンホー ジア
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シーエムシー マテリアルズ，インコーポレイティド
シーエムシー マテリアルズ，インコーポレイティド
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017546682A 2015-03-05 2016-03-04 カチオン性ポリマー添加剤を含む研磨組成物 Active JP6799000B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/639,598 2015-03-05
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive
PCT/US2016/020807 WO2016141259A1 (en) 2015-03-05 2016-03-04 Polishing composition containing cationic polymer additive

Publications (3)

Publication Number Publication Date
JP2018513229A JP2018513229A (ja) 2018-05-24
JP2018513229A5 JP2018513229A5 (enExample) 2019-03-28
JP6799000B2 true JP6799000B2 (ja) 2020-12-09

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JP2017546682A Active JP6799000B2 (ja) 2015-03-05 2016-03-04 カチオン性ポリマー添加剤を含む研磨組成物

Country Status (7)

Country Link
US (1) US9758697B2 (enExample)
EP (1) EP3265525B1 (enExample)
JP (1) JP6799000B2 (enExample)
KR (3) KR102859558B1 (enExample)
CN (1) CN107429120B (enExample)
TW (1) TWI580770B (enExample)
WO (1) WO2016141259A1 (enExample)

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CN108117839B (zh) 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
JP7132942B2 (ja) * 2017-04-17 2022-09-07 シーエムシー マテリアルズ，インコーポレイティド バルク酸化物の平坦化のための自己停止研磨組成物および方法
JP7326166B2 (ja) 2017-06-15 2023-08-15 ローディア オペレーションズ セリウム系粒子
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
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CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
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Also Published As

Publication number Publication date
TW201641662A (zh) 2016-12-01
EP3265525B1 (en) 2020-04-15
KR102889330B1 (ko) 2025-11-21
CN107429120B (zh) 2019-10-01
KR20170126960A (ko) 2017-11-20
JP2018513229A (ja) 2018-05-24
KR102859558B1 (ko) 2025-09-15
EP3265525A4 (en) 2018-08-29
EP3265525A1 (en) 2018-01-10
TWI580770B (zh) 2017-05-01
KR20250053978A (ko) 2025-04-22
CN107429120A (zh) 2017-12-01
WO2016141259A1 (en) 2016-09-09
US9758697B2 (en) 2017-09-12
KR20240054386A (ko) 2024-04-25
US20160257853A1 (en) 2016-09-08

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