KR102859558B1 - 양이온성 중합체 첨가제를 포함하는 연마 조성물 - Google Patents

양이온성 중합체 첨가제를 포함하는 연마 조성물

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Publication number
KR102859558B1
KR102859558B1 KR1020257011315A KR20257011315A KR102859558B1 KR 102859558 B1 KR102859558 B1 KR 102859558B1 KR 1020257011315 A KR1020257011315 A KR 1020257011315A KR 20257011315 A KR20257011315 A KR 20257011315A KR 102859558 B1 KR102859558 B1 KR 102859558B1
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South Korea
Prior art keywords
polishing composition
ppm
functionalized
polishing
concentration
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KR1020257011315A
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English (en)
Korean (ko)
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KR20250053978A (ko
Inventor
브라이언 라이쓰
다나 사우터 반 네스
비에트 램
런허 지아
Original Assignee
씨엠씨 머티리얼즈 엘엘씨
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Publication of KR20250053978A publication Critical patent/KR20250053978A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020257011315A 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물 Active KR102859558B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/639,598 2015-03-05
US14/639,598 US9758697B2 (en) 2015-03-05 2015-03-05 Polishing composition containing cationic polymer additive
PCT/US2016/020807 WO2016141259A1 (en) 2015-03-05 2016-03-04 Polishing composition containing cationic polymer additive
KR1020177027605A KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177027605A Division KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Publications (2)

Publication Number Publication Date
KR20250053978A KR20250053978A (ko) 2025-04-22
KR102859558B1 true KR102859558B1 (ko) 2025-09-15

Family

ID=56848223

Family Applications (3)

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KR1020247011934A Active KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020257011315A Active KR102859558B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물
KR1020177027605A Ceased KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Family Applications Before (1)

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KR1020247011934A Active KR102889330B1 (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Family Applications After (1)

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KR1020177027605A Ceased KR20170126960A (ko) 2015-03-05 2016-03-04 양이온성 중합체 첨가제를 포함하는 연마 조성물

Country Status (7)

Country Link
US (1) US9758697B2 (enExample)
EP (1) EP3265525B1 (enExample)
JP (1) JP6799000B2 (enExample)
KR (3) KR102889330B1 (enExample)
CN (1) CN107429120B (enExample)
TW (1) TWI580770B (enExample)
WO (1) WO2016141259A1 (enExample)

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CN113637412A (zh) * 2017-04-17 2021-11-12 嘉柏微电子材料股份公司 自停止性抛光组合物及用于块状氧化物平坦化的方法
IL271182B2 (en) 2017-06-15 2023-03-01 Rhodia Operations Cerium-based particles
CN109251676B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251673A (zh) * 2017-07-13 2019-01-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251675B (zh) * 2017-07-13 2021-07-30 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN107932199A (zh) * 2017-12-11 2018-04-20 浙江三瑞铜业有限公司 一种金属工件的抛光方法
CN108048844A (zh) * 2017-12-11 2018-05-18 浙江三瑞铜业有限公司 一种金属抛光方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
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JP7330676B2 (ja) * 2018-08-09 2023-08-22 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物
CN113039039B (zh) * 2019-10-15 2024-07-26 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
TWI857165B (zh) 2019-10-22 2024-10-01 美商Ｃｍｃ材料有限責任公司 用於選擇性化學機械拋光氧化物之組合物及方法
WO2021081145A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
CN114599754B (zh) 2019-11-26 2024-09-13 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
KR20240008895A (ko) 2021-05-17 2024-01-19 로디아 오퍼레이션스 세륨계 코어-셸 입자의 액체 분산물 및 분말, 이를 생성하기 위한 공정 및 폴리싱에서의 이의 용도
KR20240062238A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

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Also Published As

Publication number Publication date
KR20250053978A (ko) 2025-04-22
US20160257853A1 (en) 2016-09-08
KR20170126960A (ko) 2017-11-20
EP3265525A1 (en) 2018-01-10
WO2016141259A1 (en) 2016-09-09
JP6799000B2 (ja) 2020-12-09
TWI580770B (zh) 2017-05-01
EP3265525A4 (en) 2018-08-29
CN107429120B (zh) 2019-10-01
KR102889330B1 (ko) 2025-11-21
TW201641662A (zh) 2016-12-01
KR20240054386A (ko) 2024-04-25
JP2018513229A (ja) 2018-05-24
US9758697B2 (en) 2017-09-12
CN107429120A (zh) 2017-12-01
EP3265525B1 (en) 2020-04-15

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