JP2018512475A5 - - Google Patents

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Publication number
JP2018512475A5
JP2018512475A5 JP2017546138A JP2017546138A JP2018512475A5 JP 2018512475 A5 JP2018512475 A5 JP 2018512475A5 JP 2017546138 A JP2017546138 A JP 2017546138A JP 2017546138 A JP2017546138 A JP 2017546138A JP 2018512475 A5 JP2018512475 A5 JP 2018512475A5
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Japan
Prior art keywords
polishing composition
chemical mechanical
mechanical polishing
ppm
substrate
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JP2017546138A
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Japanese (ja)
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JP6748096B2 (ja
JP2018512475A (ja
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Priority claimed from US14/639,564 external-priority patent/US9505952B2/en
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JP2017546138A 2015-03-05 2016-03-01 セリア研磨剤を含有する研磨組成物 Active JP6748096B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/639,564 2015-03-05
US14/639,564 US9505952B2 (en) 2015-03-05 2015-03-05 Polishing composition containing ceria abrasive
PCT/US2016/020261 WO2016140968A1 (en) 2015-03-05 2016-03-01 Polishing composition containing ceria abrasive

Publications (3)

Publication Number Publication Date
JP2018512475A JP2018512475A (ja) 2018-05-17
JP2018512475A5 true JP2018512475A5 (enExample) 2019-03-22
JP6748096B2 JP6748096B2 (ja) 2020-08-26

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JP2017546138A Active JP6748096B2 (ja) 2015-03-05 2016-03-01 セリア研磨剤を含有する研磨組成物

Country Status (7)

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US (2) US9505952B2 (enExample)
EP (1) EP3265534B1 (enExample)
JP (1) JP6748096B2 (enExample)
KR (1) KR102650942B1 (enExample)
CN (1) CN107427988B (enExample)
TW (1) TWI580769B (enExample)
WO (1) WO2016140968A1 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
US10618141B2 (en) 2015-10-30 2020-04-14 Applied Materials, Inc. Apparatus for forming a polishing article that has a desired zeta potential
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
TWI673357B (zh) * 2016-12-14 2019-10-01 Cabot Microelectronics Corporation 自化學機械平坦化基板移除殘留物之組合物及方法
KR102539028B1 (ko) 2017-06-15 2023-06-02 로디아 오퍼레이션스 세륨 기반 입자
KR102336865B1 (ko) * 2017-07-06 2021-12-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
WO2019138814A1 (ja) * 2018-01-12 2019-07-18 富士フイルム株式会社 薬液、基板の処理方法
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
JP7209583B2 (ja) * 2019-05-08 2023-01-20 花王株式会社 酸化珪素膜用研磨液組成物
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
EP4041845A4 (en) 2019-10-09 2023-11-22 Entegris, Inc. WET ETCH COMPOSITION AND METHOD
JP7611246B2 (ja) * 2019-10-22 2025-01-09 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 自動停止研磨組成物及び方法
EP4048748B1 (en) 2019-10-22 2026-05-06 CMC Materials LLC Composition and method for selective oxide cmp
JP7557532B2 (ja) * 2019-10-24 2024-09-27 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
WO2021105169A1 (en) 2019-11-26 2021-06-03 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
US12091581B2 (en) 2019-12-04 2024-09-17 Versum Materials Us, Llc High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing
EP4087904B1 (en) 2020-01-07 2026-01-28 CMC Materials LLC Derivatized polyamino acids
TWI922376B (zh) * 2020-08-31 2026-04-11 南韓商秀博瑞殷股份有限公司 氧化鈰粒子、其製造方法、包含其的化學機械研磨用漿料組合物以及半導體器件的製造方法
WO2022070313A1 (ja) 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
WO2022070314A1 (ja) 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
CN114621682A (zh) * 2020-12-11 2022-06-14 安集微电子(上海)有限公司 一种化学机械抛光液及其使用方法
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7682008B2 (ja) * 2021-04-16 2025-05-23 花王株式会社 酸化珪素膜用研磨液組成物
CN113201284B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高抛光度cmp抛光液及其制备方法
TWI920315B (zh) 2021-05-17 2026-04-01 法商羅地亞經營管理公司 基於鈰的核-殼顆粒的液體分散體和粉末、其生產方法及其在拋光中之用途
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
KR102620964B1 (ko) * 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법
KR20250161006A (ko) * 2023-03-15 2025-11-14 엔테그리스, 아이엔씨. 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법
WO2025079862A1 (ko) * 2023-10-11 2025-04-17 주식회사 케이씨텍 나노 세리아를 포함하는 슬러리 조성물
CN122422452A (zh) 2023-12-21 2026-07-17 罗地亚经营管理公司 包含其上吸附有多金属氧酸盐物质的氧化铈颗粒的水性分散体,其生产方法及其在抛光中的用途
WO2025141810A1 (ja) * 2023-12-27 2025-07-03 株式会社レゾナック 研磨液及び研磨方法
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6786945B2 (en) * 2001-02-20 2004-09-07 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US20060175295A1 (en) * 2003-07-11 2006-08-10 Jia-Ni Chu Abrasive partilcle for chemical mechanical polishing
TWI334882B (en) 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
WO2008023858A1 (en) * 2006-08-25 2008-02-28 Hanwha Chemical Corporation Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor
CN107199502A (zh) 2008-04-23 2017-09-26 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
SG10201401549SA (en) * 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
WO2011048889A1 (ja) * 2009-10-22 2011-04-28 日立化成工業株式会社 研磨剤、濃縮1液式研磨剤、2液式研磨剤及び基板の研磨方法
KR101191427B1 (ko) * 2009-11-25 2012-10-16 주식회사 엘지화학 화학적 기계적 연마용 슬러리 조성물 및 이의 제조방법
CN102911605A (zh) * 2011-08-05 2013-02-06 安集微电子(上海)有限公司 一种化学机械抛光液
CN104137232A (zh) 2012-02-21 2014-11-05 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之cmp組成物
TWI456013B (zh) * 2012-04-10 2014-10-11 盟智科技股份有限公司 研磨液組成物
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
KR101405334B1 (ko) * 2013-09-12 2014-06-11 유비머트리얼즈주식회사 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법

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