CN102911605A - 一种化学机械抛光液 - Google Patents
一种化学机械抛光液 Download PDFInfo
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- CN102911605A CN102911605A CN2011102234556A CN201110223455A CN102911605A CN 102911605 A CN102911605 A CN 102911605A CN 2011102234556 A CN2011102234556 A CN 2011102234556A CN 201110223455 A CN201110223455 A CN 201110223455A CN 102911605 A CN102911605 A CN 102911605A
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- polishing fluid
- chemical mechanical
- polishing solution
- mechanical polishing
- cerium dioxide
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- 238000005498 polishing Methods 0.000 title claims abstract description 38
- 239000000126 substance Substances 0.000 title claims abstract description 9
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims description 22
- -1 phospho Chemical class 0.000 claims description 12
- 239000003082 abrasive agent Substances 0.000 claims description 8
- VPTUPAVOBUEXMZ-UHFFFAOYSA-N (1-hydroxy-2-phosphonoethyl)phosphonic acid Chemical compound OP(=O)(O)C(O)CP(O)(O)=O VPTUPAVOBUEXMZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 5
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 9
- 238000002955 isolation Methods 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 abstract description 2
- 229940044927 ceric oxide Drugs 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 239000005562 Glyphosate Substances 0.000 description 4
- XDDAORKBJWWYJS-UHFFFAOYSA-N glyphosate Chemical compound OC(=O)CNCP(O)(O)=O XDDAORKBJWWYJS-UHFFFAOYSA-N 0.000 description 4
- 229940097068 glyphosate Drugs 0.000 description 4
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明公开了一种用于浅槽隔离的化学机械抛光液。该抛光液至少含有含有一种二氧化铈的磨料，一种有机膦酸，一种pH调节剂，和载体水，具有较高的高密度等离子体二氧化硅和较低的氮化硅的去除速率，抛光后的表面平坦光洁，稳定性好，适用于浅槽隔离的化学机械平坦化。
Description
技术领域
本发明涉及一种抛光液，尤其涉及一种化学机械抛光液。
背景技术
COMS芯片的制造通常是在硅衬底材料上集成数以亿计的有源器件(包括NMOS和PMOS)，进而设计各种电路实现复杂的逻辑功能和模拟功能。要确保不同器件之间的电学隔离，就要采用绝缘材料将其隔离，浅槽隔离(STI)就是在有源器件之间形成隔离区的工业化方法。这种隔离方法，是在衬底上生长一层二氧化硅层，然后再淀积一层氮化硅薄膜，二者的典型厚度分别为10-20nm和50-100nm，然后进行涂胶，、曝光和显影，如图1所示。
在图1中看出5-6的步骤需要用CMP平坦化工艺，要求快速去除二氧化硅并停止在氮化硅上面，这就要求其抛光液要具有较高的HDP/SIN的选择比，通常要大于10，并且在不同密度区域的碟形凹陷不能相差200埃，表面光滑洁净，颗粒污染物和缺陷等均小于工艺要求的指标。
目前芯片厂广泛应用的是二氧化铈抛光液，该类抛光液抛光速度快，对氮化硅的选择比较高，是较为成熟的工业化产品，但该类抛光液容易产生沉淀分层，对在线的设备要求较高，另外价格昂贵，在全球芯片行业降耗增效的背景下，降低成本也是抛光液的要求之一。
发明内容
本发明的目的是提供一种能够克服上述现有技术中缺陷的化学机械抛光液。
本发明的技术方案如下：本发明公开一种适合于浅槽隔离平坦化的化学机械抛光组合物，该抛光液至少含有一种二氧化铈的磨料，一种有机膦酸，一种pH调节剂，和载体水。
其中，二氧化铈磨料粒径为20-500nm，固含量从0.1wt％到10wt％。最好在60-250nm，磨料作用是去除HDP二氧化硅。
该抛光液选用的氧化铈磨料为pH 8-11的纳米氧化铈粉的水分散体。
其中，有机膦酸为选自2-羟基膦酰基乙酸、羟基亚乙基二膦酸(HEDP)和N-(膦酰基甲基)氨基乙酸中的一种或多种，其浓度为0.05wt％-1wt％。有机膦酸的作用是抑制氮化硅的去除速率。其中N-(膦酰基甲基)氨基乙酸又名草甘膦(Glyphosate)。
其中，pH调节剂为KOH或者有机胺，抛光液的pH值为7-12。
本发明的有益效果是：
本文采用一种一定粒径分布的碱性的二氧化铈颗粒，具有较高的HDP去除速率，采用选自2-羟基膦酰基乙酸、羟基亚乙基二膦酸(HEDP)和N-(膦酰基甲基)氨基乙酸中的一种或多种的有机膦酸在合适的HDP氧化硅的抛光速率下，大幅度降低氮化硅的去除速率，以达到高的选择比，在浅槽隔离的平坦化过程中停止在氮化硅层，实现平坦化。
附图说明
图1为现有技术中形成隔离区的工业化方法示意图。
具体实施方式
下面通过具体实施方式来进一步阐述本发明。
按照表1中的配比制备抛光液，几种组分简单混合即可。
抛光条件：
下压力： 4psi
抛光垫： IC1000抛光垫
抛光条件：70/90rpm
抛光液流量：100ml/min
表1、实施例1-6配方
HPAA：2-羟基膦酰基乙酸；HEDP：羟基亚乙基二膦酸，Glyphosate：N-(膦酰基甲基)氨基乙酸。
从以上数据可以看出，与未添加有机膦酸的氧化饰磨料相比，氮化硅的去除速率有了大幅度的降低，可以根据专有添加剂的浓度来调整HDP对氮化硅的选择比，氧化硅(HDP)的去除速率随着Glyphosate添加量会有一定程度的降低，选择比仍然可调。使用氧化饰的磨料制备的STI抛光液，比硅溶胶基的抛光液氧化硅去除速率要高，选择比也有较大的调控区间。在STI的平坦化中表现出了一定的技术优势。
Claims (9)
1.一种化学机械抛光液，包括：一种二氧化铈的磨料，一种有机膦酸，一种pH调节剂，和载体水。
2.如权利要求1所述的抛光液，其特征在于，所述二氧化铈磨料为碱性氧化铈的水分散体，所述碱性氧化铈的pH为8-11。
3.如权利要求1所述的抛光液，其特征在于，所述二氧化铈磨料粒径为20-500nm。
4.如权利要求3所述的抛光液，其特征在于，所述二氧化铈磨料粒径为60-200nm。
5.如权利要求1所述的抛光液，其特征在于，所述二氧化铈磨料的固含量从0.1wt％到10wt％。
6.如权利要求1所述的抛光液，其特征在于，所述有机膦酸为选自2-羟基膦酰基乙酸、羟基亚乙基二膦酸和N-(膦酰基甲基)氨基乙酸中的一种或多种。
7.如权利要求1所述的抛光液，其特征在于，所述有机膦酸的浓度为0.05wt％-1wt％。
8.如权利要求1所述的抛光液，其特征在于，所述pH调节剂为KOH或者有机胺。
9.如权利要求1所述的抛光液，其特征在于，所述抛光液的pH值为7-12。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234556A CN102911605A (zh) | 2011-08-05 | 2011-08-05 | 一种化学机械抛光液 |
| PCT/CN2012/000764 WO2013020351A1 (zh) | 2011-08-05 | 2012-06-04 | 一种化学机械抛光液 |
| TW101120381A TW201307542A (zh) | 2011-08-05 | 2012-06-07 | 化學機械拋光液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234556A CN102911605A (zh) | 2011-08-05 | 2011-08-05 | 一种化学机械抛光液 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102911605A true CN102911605A (zh) | 2013-02-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102234556A Pending CN102911605A (zh) | 2011-08-05 | 2011-08-05 | 一种化学机械抛光液 |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102911605A (zh) |
| TW (1) | TW201307542A (zh) |
| WO (1) | WO2013020351A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745094A (zh) * | 2013-12-26 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1948418A (zh) * | 2005-10-14 | 2007-04-18 | 花王株式会社 | 半导体基板用研磨液组合物 |
| CN101451044A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101645398A (zh) * | 2008-08-08 | 2010-02-10 | 夏普株式会社 | 半导体装置的制造方法、研磨装置 |
| CN102115636A (zh) * | 2009-12-30 | 2011-07-06 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| EP1554357A1 (en) * | 2002-10-25 | 2005-07-20 | Showa Denko K.K. | Polishing slurry and polished substrate |
| CN1955239A (zh) * | 2005-10-28 | 2007-05-02 | 安集微电子（上海）有限公司 | 铜的化学机械抛光浆料 |
-
2011
- 2011-08-05 CN CN2011102234556A patent/CN102911605A/zh active Pending
-
2012
- 2012-06-04 WO PCT/CN2012/000764 patent/WO2013020351A1/zh active Application Filing
- 2012-06-07 TW TW101120381A patent/TW201307542A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1948418A (zh) * | 2005-10-14 | 2007-04-18 | 花王株式会社 | 半导体基板用研磨液组合物 |
| CN101451044A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN101645398A (zh) * | 2008-08-08 | 2010-02-10 | 夏普株式会社 | 半导体装置的制造方法、研磨装置 |
| CN102115636A (zh) * | 2009-12-30 | 2011-07-06 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104745094A (zh) * | 2013-12-26 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN104745094B (zh) * | 2013-12-26 | 2018-09-14 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013020351A1 (zh) | 2013-02-14 |
| TW201307542A (zh) | 2013-02-16 |
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