TWI580769B - 包含氧化鈰磨料之拋光組合物 - Google Patents

包含氧化鈰磨料之拋光組合物 Download PDF

Info

Publication number
TWI580769B
TWI580769B TW105106807A TW105106807A TWI580769B TW I580769 B TWI580769 B TW I580769B TW 105106807 A TW105106807 A TW 105106807A TW 105106807 A TW105106807 A TW 105106807A TW I580769 B TWI580769 B TW I580769B
Authority
TW
Taiwan
Prior art keywords
polishing composition
ppm
polishing
abrasive particles
chemical mechanical
Prior art date
Application number
TW105106807A
Other languages
English (en)
Chinese (zh)
Other versions
TW201641661A (zh
Inventor
布萊恩 萊斯
凡 妮絲 唐娜 索特
越 林
亞歷山大 漢斯
史蒂芬 卡夫特
賈仁合
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201641661A publication Critical patent/TW201641661A/zh
Application granted granted Critical
Publication of TWI580769B publication Critical patent/TWI580769B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/04Aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105106807A 2015-03-05 2016-03-04 包含氧化鈰磨料之拋光組合物 TWI580769B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/639,564 US9505952B2 (en) 2015-03-05 2015-03-05 Polishing composition containing ceria abrasive

Publications (2)

Publication Number Publication Date
TW201641661A TW201641661A (zh) 2016-12-01
TWI580769B true TWI580769B (zh) 2017-05-01

Family

ID=56848507

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105106807A TWI580769B (zh) 2015-03-05 2016-03-04 包含氧化鈰磨料之拋光組合物

Country Status (7)

Country Link
US (2) US9505952B2 (enExample)
EP (1) EP3265534B1 (enExample)
JP (1) JP6748096B2 (enExample)
KR (1) KR102650942B1 (enExample)
CN (1) CN107427988B (enExample)
TW (1) TWI580769B (enExample)
WO (1) WO2016140968A1 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
CN113103145B (zh) 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
TWI673357B (zh) 2016-12-14 2019-10-01 Cabot Microelectronics Corporation 自化學機械平坦化基板移除殘留物之組合物及方法
CN110740974B (zh) * 2017-06-15 2022-06-21 罗地亚经营管理公司 基于铈的颗粒
KR102336865B1 (ko) * 2017-07-06 2021-12-09 오씨아이 주식회사 식각 조성물 및 이를 이용한 식각 방법
CN109251674B (zh) * 2017-07-13 2021-12-17 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
US11471999B2 (en) * 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
KR102541313B1 (ko) * 2018-01-12 2023-06-13 후지필름 가부시키가이샤 약액, 기판의 처리 방법
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
US11549034B2 (en) 2018-08-09 2023-01-10 Versum Materials Us, Llc Oxide chemical mechanical planarization (CMP) polishing compositions
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
US10937691B2 (en) * 2018-09-27 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7209583B2 (ja) * 2019-05-08 2023-01-20 花王株式会社 酸化珪素膜用研磨液組成物
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
WO2021072091A1 (en) 2019-10-09 2021-04-15 Entegris, Inc. Wet etching composition and method
CN114599752A (zh) 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于选择性化学机械抛光氧化物的组合物及方法
WO2021081171A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Self-stopping polishing composition and method
JP7557532B2 (ja) * 2019-10-24 2024-09-27 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
KR20220103785A (ko) 2019-11-26 2022-07-22 로디아 오퍼레이션스 세륨계 코어-셸 입자의 액체 분산물 및 분말, 이를 생성하기 위한 공정 및 폴리싱에서의 이의 용도
CN114929822B (zh) * 2019-12-04 2025-05-09 弗萨姆材料美国有限责任公司 高氧化物膜去除速率浅沟槽隔离(sti)化学机械平面化(cmp)抛光
JP7670722B2 (ja) 2020-01-07 2025-04-30 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘導体化ポリアミノ酸
TWI896417B (zh) * 2020-08-31 2025-09-01 南韓商秀博瑞殷股份有限公司 氧化鈰粒子、其製造方法、包含其的化學機械研磨用漿料組合物以及半導體器件的製造方法
WO2022070313A1 (ja) 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
WO2022070314A1 (ja) 2020-09-30 2022-04-07 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
CN114621682A (zh) * 2020-12-11 2022-06-14 安集微电子(上海)有限公司 一种化学机械抛光液及其使用方法
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
JP7682008B2 (ja) * 2021-04-16 2025-05-23 花王株式会社 酸化珪素膜用研磨液組成物
CN113201284B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高抛光度cmp抛光液及其制备方法
WO2022243280A1 (en) 2021-05-17 2022-11-24 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
KR102620964B1 (ko) * 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법
US20240309272A1 (en) * 2023-03-15 2024-09-19 Entegris, Inc. Composition and method for selectively etching silicon nitride
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025141810A1 (ja) * 2023-12-27 2025-07-03 株式会社レゾナック 研磨液及び研磨方法
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201307542A (zh) * 2011-08-05 2013-02-16 安集微電子(上海)有限公司 化學機械拋光液
TW201412908A (zh) * 2012-07-11 2014-04-01 卡博特微電子公司 用於氮化矽材料之選擇性拋光之組合物及方法
KR101405334B1 (ko) * 2013-09-12 2014-06-11 유비머트리얼즈주식회사 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법
TW201504415A (zh) * 2013-07-22 2015-02-01 卡博特微電子公司 用於二氧化矽、氮化矽、以及多晶矽材料之化學機械拋光之組合物及方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
KR100512134B1 (ko) * 2001-02-20 2005-09-02 히다치 가세고교 가부시끼가이샤 연마제 및 기판의 연마방법
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
EP1660606B1 (en) * 2003-07-11 2013-09-04 W.R. Grace & CO. - CONN. Abrasive particles for chemical mechanical polishing
TWI334882B (en) 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
WO2008023858A1 (en) * 2006-08-25 2008-02-28 Hanwha Chemical Corporation Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor
TW201000613A (en) 2008-04-23 2010-01-01 Hitachi Chemical Co Ltd Polishing agent and method for polishing substrate using the same
CN104845532B (zh) * 2009-06-22 2017-10-03 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
WO2011048889A1 (ja) * 2009-10-22 2011-04-28 日立化成工業株式会社 研磨剤、濃縮1液式研磨剤、2液式研磨剤及び基板の研磨方法
KR101191427B1 (ko) * 2009-11-25 2012-10-16 주식회사 엘지화학 화학적 기계적 연마용 슬러리 조성물 및 이의 제조방법
CN107617968A (zh) 2012-02-21 2018-01-23 日立化成株式会社 研磨剂、研磨剂组和基体的研磨方法
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之cmp組成物
TWI456013B (zh) 2012-04-10 2014-10-11 盟智科技股份有限公司 研磨液組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201307542A (zh) * 2011-08-05 2013-02-16 安集微電子(上海)有限公司 化學機械拋光液
TW201412908A (zh) * 2012-07-11 2014-04-01 卡博特微電子公司 用於氮化矽材料之選擇性拋光之組合物及方法
TW201504415A (zh) * 2013-07-22 2015-02-01 卡博特微電子公司 用於二氧化矽、氮化矽、以及多晶矽材料之化學機械拋光之組合物及方法
KR101405334B1 (ko) * 2013-09-12 2014-06-11 유비머트리얼즈주식회사 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Luo, Jianfeng et al., "Effects of abrasive size distribution in chemical mechanical planarization: modeling and verification", IEEE Transaction on Semiconductor Manufacturing, 2003, Vol. 16, No. 3, pp. 469-476 *

Also Published As

Publication number Publication date
US9828528B2 (en) 2017-11-28
KR102650942B1 (ko) 2024-03-26
JP2018512475A (ja) 2018-05-17
US9505952B2 (en) 2016-11-29
JP6748096B2 (ja) 2020-08-26
US20160257856A1 (en) 2016-09-08
EP3265534A1 (en) 2018-01-10
CN107427988B (zh) 2019-09-17
US20170044403A1 (en) 2017-02-16
TW201641661A (zh) 2016-12-01
EP3265534B1 (en) 2021-04-14
EP3265534A4 (en) 2018-12-05
WO2016140968A1 (en) 2016-09-09
CN107427988A (zh) 2017-12-01
KR20170125378A (ko) 2017-11-14

Similar Documents

Publication Publication Date Title
TW201641661A (zh) 包含氧化鈰磨料之拋光組合物
TWI663231B (zh) 自停止性拋光組合物及用於大塊氧化物平坦化之方法
TWI580768B (zh) 含有氧化鈰粒子之拋光組合物及使用方法
TWI605114B (zh) 用於加工介電基板之方法及組合物
TWI580770B (zh) 包含陽離子聚合物添加劑之拋光組合物
US10639766B2 (en) Methods and compositions for processing dielectric substrate
TWI650391B (zh) 包含烷基胺及環糊精之化學機械拋光(cmp)加工組合物
JP6434501B2 (ja) 酸化物および窒化物に選択的な高除去速度および低欠陥を有するcmp組成物