TWI456013B - 研磨液組成物 - Google Patents
研磨液組成物 Download PDFInfo
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- TWI456013B TWI456013B TW101112637A TW101112637A TWI456013B TW I456013 B TWI456013 B TW I456013B TW 101112637 A TW101112637 A TW 101112637A TW 101112637 A TW101112637 A TW 101112637A TW I456013 B TWI456013 B TW I456013B
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- slurry composition
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- 239000002002 slurry Substances 0.000 title claims 36
- 238000005498 polishing Methods 0.000 title claims 3
- 239000002245 particle Substances 0.000 claims 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 6
- 239000002736 nonionic surfactant Substances 0.000 claims 6
- 125000004432 carbon atom Chemical group C* 0.000 claims 4
- 239000002738 chelating agent Substances 0.000 claims 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- 239000008365 aqueous carrier Substances 0.000 claims 3
- 238000005260 corrosion Methods 0.000 claims 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 239000003002 pH adjusting agent Substances 0.000 claims 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims 2
- 230000007797 corrosion Effects 0.000 claims 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 235000006408 oxalic acid Nutrition 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims 1
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims 1
- PKHVUMMJMYKRNO-UHFFFAOYSA-N 2-(triazol-1-yl)ethanol Chemical compound OCCN1C=CN=N1 PKHVUMMJMYKRNO-UHFFFAOYSA-N 0.000 claims 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 claims 1
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 claims 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims 1
- KUEFXPHXHHANKS-UHFFFAOYSA-N 5-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NC=NN1 KUEFXPHXHHANKS-UHFFFAOYSA-N 0.000 claims 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims 1
- 239000004475 Arginine Substances 0.000 claims 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims 1
- 239000004471 Glycine Substances 0.000 claims 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims 1
- 240000006394 Sorghum bicolor Species 0.000 claims 1
- 235000011684 Sorghum saccharatum Nutrition 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 235000004279 alanine Nutrition 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 235000001014 amino acid Nutrition 0.000 claims 1
- 229940024606 amino acid Drugs 0.000 claims 1
- 150000001413 amino acids Chemical class 0.000 claims 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 claims 1
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims 1
- 229940009098 aspartate Drugs 0.000 claims 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical group C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- -1 benzylmethyl group Chemical group 0.000 claims 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910001919 chlorite Inorganic materials 0.000 claims 1
- 229910052619 chlorite group Inorganic materials 0.000 claims 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims 1
- 239000008367 deionised water Substances 0.000 claims 1
- 229910021641 deionized water Inorganic materials 0.000 claims 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 claims 1
- 235000013922 glutamic acid Nutrition 0.000 claims 1
- 239000004220 glutamic acid Substances 0.000 claims 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 claims 1
- 239000004310 lactic acid Substances 0.000 claims 1
- 235000014655 lactic acid Nutrition 0.000 claims 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 1
- 239000011976 maleic acid Substances 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 150000007524 organic acids Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 150000004965 peroxy acids Chemical class 0.000 claims 1
- 125000003884 phenylalkyl group Chemical group 0.000 claims 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 claims 1
- 150000003333 secondary alcohols Chemical group 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Claims (28)
- 一種研磨液組成物，包括一非離子型界面活性劑，該非離子型界面活性劑為二級醇乙氧基化物，且該非離子型界面活性劑由式(1)表示， 其中x為1至50的整數。
- 如申請專利範圍第1項所述之研磨液組成物，其中x為7至40的整數。
- 如申請專利範圍第1項所述之研磨液組成物，其中R是由具有3至50個碳原子的烷基、具有3至50個碳原子的羥基烷基、具有6至55個碳原子的苯甲基烷基及具有6至55個碳原子的苯基烷基所組成族群中所選出的一者。
- 如申請專利範圍第1項所述之研磨液組成物，其中該非離子型界面活性劑由式(2)表示， 其中m+n為2至15的整數。
- 如申請專利範圍第1項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該非離子型界面活性劑的含量介於5ppm至5000ppm之間。
- 如申請專利範圍第5項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該非離子型界面活性劑的含量介於10ppm至1000ppm之間。
- 如申請專利範圍第1項所述之研磨液組成物，更包 括一氧化劑。
- 如申請專利範圍第7項所述之研磨液組成物，其中該氧化劑為由過錳酸鹽、過氧酸、碘酸鹽、氧溴化物鹽、高鈰鹽、溴酸鹽、過氧化氫、亞氯酸鹽、次氯酸鹽所組成的族群中所選出的至少一者。
- 如申請專利範圍第7項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該氧化劑的含量介於0.5%至10%之間。
- 如申請專利範圍第1項所述之研磨液組成物，更包括研磨顆粒。
- 如申請專利範圍第10項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該些研磨顆粒的含量介於100ppm至5000ppm之間。
- 如申請專利範圍第10項所述之研磨液組成物，其中該研磨顆粒的平均粒徑介於5nm至300nm。
- 如申請專利範圍第10項所述之研磨液組成物，其中該研磨顆粒的平均粒徑介於5nm至100nm。
- 如申請專利範圍第10項所述之研磨液組成物，其中該研磨顆粒選自於由二氧化矽、氧化鋁、二氧化鈰、二氧化鋯及二氧化鈦所組成之族群中的至少一者。
- 如申請專利範圍第1項所述之研磨液組成物，其中該研磨液組成物的pH值介於5至11之間。
- 如申請專利範圍第1項所述之研磨液組成物，更包括一pH值調節劑。
- 如申請專利範圍第16項所述之研磨液組成物，其中該pH值調節劑是由氫氧化鉀、三乙醇胺、2,2,2-氮基三乙醇、硝酸、亞硫酸、草酸、檸檬酸所組成的族群中選出的至少一者。
- 如申請專利範圍第16項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該pH值調節劑的含量介於5ppm至10000ppm。
- 如申請專利範圍第1項所述之研磨液組成物，更包括一螯合劑。
- 如申請專利範圍第19項所述之研磨液組成物，其中該螯合劑包括無機酸、有機酸或胺基酸。
- 如申請專利範圍第20項所述之研磨液組成物，其中該螯合劑是由檸檬酸、二乙烯三胺五乙酸鹽、銨草酸鹽、酒石酸、草酸、馬來酸、乳酸、琥珀酸、組胺酸、丙胺酸、甘胺酸、天冬胺酸鹽、麩胺酸、絲胺酸與精胺酸所組成的族群中選出的至少一者。
- 如申請專利範圍第19項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該螯合劑的含量介於0.1%至10%之間。
- 如申請專利範圍第1項所述之研磨液組成物，更包括一防蝕劑。
- 如申請專利範圍第23項所述之研磨液組成物，其中該防蝕劑是由1-H-苯並三唑、N-醯基肌胺酸鹽、十二烷基硫酸銨、甲苯基三唑、5-胺基四唑、3-胺基-1,2,4-三唑、 4-胺基-4H-1,2,4-三唑、3-硝基-1,2,4-三唑、3-巰基-1,2,4-三唑、1H-1,2,3三唑-1-乙醇、苯並咪唑、咪唑、吡咯、二氫吡咯、噁唑、異噁唑、吲唑、吲嗪、1,2,3-三唑、1,2,4-三唑、甲基苯並三唑、2-巰基苯並噻唑、苯亞甲基二氧基四氫噻唑、噻吩亞甲基二氧基四氫噻唑與十二烷基苯磺酸所組成的族群中選出的至少一者。
- 如申請專利範圍第23項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該防蝕劑的含量介於1ppm至1000ppm之間。
- 如申請專利範圍第1項所述之研磨液組成物，更包括一水性載體。
- 如申請專利範圍第26項所述之研磨液組成物，其中以該研磨液組成物的總重量計，該水性載體的含量介於50%至99%之間。
- 如申請專利範圍第26項所述之研磨液組成物，其中該水性載體包括去離子水。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
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| TW101112637A TWI456013B (zh) | 2012-04-10 | 2012-04-10 | 研磨液組成物 |
| CN201210175726.XA CN103361028B (zh) | 2012-04-10 | 2012-05-31 | 研磨液组成物 |
| US13/568,130 US9039925B2 (en) | 2012-04-10 | 2012-08-07 | Polishing slurry composition |
| SG2012061958A SG194277A1 (en) | 2012-04-10 | 2012-08-22 | Polishing slurry composition |
| JP2013082334A JP5613283B2 (ja) | 2012-04-10 | 2013-04-10 | 研磨スラリー組成物 |
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| TW101112637A TWI456013B (zh) | 2012-04-10 | 2012-04-10 | 研磨液組成物 |
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| TW201341489A TW201341489A (zh) | 2013-10-16 |
| TWI456013B true TWI456013B (zh) | 2014-10-11 |
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| TW101112637A TWI456013B (zh) | 2012-04-10 | 2012-04-10 | 研磨液組成物 |
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| US (1) | US9039925B2 (zh) |
| JP (1) | JP5613283B2 (zh) |
| CN (1) | CN103361028B (zh) |
| SG (1) | SG194277A1 (zh) |
| TW (1) | TWI456013B (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103370445B (zh) * | 2011-11-14 | 2015-12-09 | 广州天至环保科技有限公司 | 一种增强pcb镀层抗氧化和耐腐蚀性能的水相封孔剂及其使用方法 |
| CN104745085B (zh) * | 2013-12-25 | 2018-08-21 | 安集微电子（上海）有限公司 | 一种用于钴阻挡层抛光的化学机械抛光液 |
| CN104745086A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 |
| US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
| EP3210237B1 (en) | 2014-10-21 | 2019-05-08 | Cabot Microelectronics Corporation | Cobalt dishing control agents |
| WO2016065057A1 (en) | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Corrosion inhibitors and related compositions and methods |
| US9688885B2 (en) | 2014-10-21 | 2017-06-27 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
| US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
| US9528030B1 (en) | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
| KR102122125B1 (ko) * | 2018-06-01 | 2020-06-11 | 주식회사 케이씨텍 | 연마용 슬러리 조성물 |
| CN111378366B (zh) * | 2018-12-27 | 2022-11-18 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN111378379B (zh) * | 2018-12-29 | 2022-08-05 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN110158090A (zh) * | 2019-06-26 | 2019-08-23 | 珠海横琴思国科技发展有限公司 | 一种环保的反应型抛光光亮剂组合物及其制备方法与应用 |
| CN113122143B (zh) * | 2019-12-31 | 2024-03-08 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其在铜抛光中的应用 |
| CN118271973B (zh) * | 2024-05-29 | 2024-08-20 | 广东粤港澳大湾区黄埔材料研究院 | 悬浮抛光液及其制备方法和碳化硅的抛光方法 |
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- 2012-04-10 TW TW101112637A patent/TWI456013B/zh not_active IP Right Cessation
- 2012-05-31 CN CN201210175726.XA patent/CN103361028B/zh active Active
- 2012-08-07 US US13/568,130 patent/US9039925B2/en active Active
- 2012-08-22 SG SG2012061958A patent/SG194277A1/en unknown
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103361028A (zh) | 2013-10-23 |
| US20130264515A1 (en) | 2013-10-10 |
| TW201341489A (zh) | 2013-10-16 |
| US9039925B2 (en) | 2015-05-26 |
| JP2013219361A (ja) | 2013-10-24 |
| CN103361028B (zh) | 2015-09-16 |
| JP5613283B2 (ja) | 2014-10-22 |
| SG194277A1 (en) | 2013-11-29 |
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