CN103361028B - 研磨液组成物 - Google Patents
研磨液组成物 Download PDFInfo
- Publication number
- CN103361028B CN103361028B CN201210175726.XA CN201210175726A CN103361028B CN 103361028 B CN103361028 B CN 103361028B CN 201210175726 A CN201210175726 A CN 201210175726A CN 103361028 B CN103361028 B CN 103361028B
- Authority
- CN
- China
- Prior art keywords
- lapping liquid
- acid
- liquid constituent
- constituent
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title abstract description 5
- 238000005498 polishing Methods 0.000 title description 2
- 239000002002 slurry Substances 0.000 title 1
- 239000007788 liquid Substances 0.000 claims description 120
- 239000000470 constituent Substances 0.000 claims description 111
- 239000006061 abrasive grain Substances 0.000 claims description 24
- 239000003352 sequestering agent Substances 0.000 claims description 19
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 18
- 239000004094 surface-active agent Substances 0.000 claims description 16
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 15
- 239000003112 inhibitor Substances 0.000 claims description 15
- 150000003333 secondary alcohols Chemical group 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000008365 aqueous carrier Substances 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- PFNFFQXMRSDOHW-UHFFFAOYSA-N spermine Chemical compound NCCCNCCCCNCCCN PFNFFQXMRSDOHW-UHFFFAOYSA-N 0.000 claims description 9
- 241000790917 Dioxys <bee> Species 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- -1 isoxzzole Chemical compound 0.000 claims description 8
- 239000004471 Glycine Substances 0.000 claims description 7
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 7
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 7
- OGYGFUAIIOPWQD-UHFFFAOYSA-N 1,3-thiazolidine Chemical compound C1CSCN1 OGYGFUAIIOPWQD-UHFFFAOYSA-N 0.000 claims description 6
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 6
- 235000001014 amino acid Nutrition 0.000 claims description 6
- 150000001413 amino acids Chemical class 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 6
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 4
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 4
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 claims description 4
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 claims description 4
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 4
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 claims description 4
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 4
- 229910001919 chlorite Inorganic materials 0.000 claims description 4
- 229910052619 chlorite group Inorganic materials 0.000 claims description 4
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 4
- HOBCFUWDNJPFHB-UHFFFAOYSA-N indolizine Chemical compound C1=CC=CN2C=CC=C21 HOBCFUWDNJPFHB-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 150000004965 peroxy acids Chemical class 0.000 claims description 4
- 229960004418 trolamine Drugs 0.000 claims description 4
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 claims description 3
- 150000000703 Cerium Chemical class 0.000 claims description 3
- 229940063953 ammonium lauryl sulfate Drugs 0.000 claims description 3
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 3
- 150000001510 aspartic acids Chemical class 0.000 claims description 3
- 229940000635 beta-alanine Drugs 0.000 claims description 3
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 3
- HJCMMOODWZOXML-UHFFFAOYSA-N bromo hypobromite Chemical class BrOBr HJCMMOODWZOXML-UHFFFAOYSA-N 0.000 claims description 3
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 3
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 3
- 239000011707 mineral Substances 0.000 claims description 3
- LPUQAYUQRXPFSQ-DFWYDOINSA-M monosodium L-glutamate Chemical compound [Na+].[O-]C(=O)[C@@H](N)CCC(O)=O LPUQAYUQRXPFSQ-DFWYDOINSA-M 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 150000007524 organic acids Chemical class 0.000 claims description 3
- 150000003233 pyrroles Chemical class 0.000 claims description 3
- 229940063675 spermine Drugs 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 2
- PKHVUMMJMYKRNO-UHFFFAOYSA-N 2-(triazol-1-yl)ethanol Chemical compound OCCN1C=CN=N1 PKHVUMMJMYKRNO-UHFFFAOYSA-N 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- KUEFXPHXHHANKS-UHFFFAOYSA-N 5-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NC=NN1 KUEFXPHXHHANKS-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 21
- 239000002736 nonionic surfactant Substances 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 239000010949 copper Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000013543 active substance Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229940024606 amino acid Drugs 0.000 description 4
- 229960004106 citric acid Drugs 0.000 description 4
- 235000015165 citric acid Nutrition 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000003884 phenylalkyl group Chemical group 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- SXFBQAMLJMDXOD-UHFFFAOYSA-N (+)-hydrogentartrate bitartrate salt Chemical compound OC(=O)C(O)C(O)C(O)=O.OC(=O)C(O)C(O)C(O)=O SXFBQAMLJMDXOD-UHFFFAOYSA-N 0.000 description 1
- 150000000177 1,2,3-triazoles Chemical class 0.000 description 1
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 1
- LGAUGMFCKCWWQN-UHFFFAOYSA-N 1,2-dihydro-1,2,4-triazole-3-thione Chemical compound SC1=NNC=N1.SC1=NNC=N1 LGAUGMFCKCWWQN-UHFFFAOYSA-N 0.000 description 1
- WFYASTPQDOUBSW-UHFFFAOYSA-N 1h-1,2,4-triazole Chemical compound C=1N=CNN=1.C1=NN=CN1 WFYASTPQDOUBSW-UHFFFAOYSA-N 0.000 description 1
- BAVISLZXEYYZJR-UHFFFAOYSA-N 2-(triazol-1-yl)ethanol Chemical compound N1(N=NC=C1)CCO.N1(N=NC=C1)CCO BAVISLZXEYYZJR-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical group CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 1
- KVZLHPXEUGJPAH-UHFFFAOYSA-N 2-oxidanylpropanoic acid Chemical compound CC(O)C(O)=O.CC(O)C(O)=O KVZLHPXEUGJPAH-UHFFFAOYSA-N 0.000 description 1
- GEHBUYNXWNQEIU-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC=1N=NNN=1.NC=1N=NNN=1 GEHBUYNXWNQEIU-UHFFFAOYSA-N 0.000 description 1
- AUOVJYKEYXOIJD-UHFFFAOYSA-N 5-nitro-1H-1,2,4-triazole Chemical compound [N+](=O)([O-])C1=NNC=N1.[N+](=O)([O-])C1=NNC=N1 AUOVJYKEYXOIJD-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- CJUSZMLZWKCREM-UHFFFAOYSA-N C(C1=CC=CC=C1)=C1C(NC(S1)=O)=O.S1CNCC1 Chemical compound C(C1=CC=CC=C1)=C1C(NC(S1)=O)=O.S1CNCC1 CJUSZMLZWKCREM-UHFFFAOYSA-N 0.000 description 1
- MMUAXBFQFVGCOY-UHFFFAOYSA-N C1(=CC=CS1)C=C1C(NC(S1)=O)=O.S1CNCC1 Chemical compound C1(=CC=CS1)C=C1C(NC(S1)=O)=O.S1CNCC1 MMUAXBFQFVGCOY-UHFFFAOYSA-N 0.000 description 1
- 241001269524 Dura Species 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- PXPNOCRZBLSHCE-UHFFFAOYSA-N SC=1SC2=C(N1)C=CC=C2.SC=2SC1=C(N2)C=CC=C1.CC1=CC=CC=2NN=NC21.CC2=CC=CC=1NN=NC12 Chemical compound SC=1SC2=C(N1)C=CC=C2.SC=2SC1=C(N2)C=CC=C1.CC1=CC=CC=2NN=NC21.CC2=CC=CC=1NN=NC12 PXPNOCRZBLSHCE-UHFFFAOYSA-N 0.000 description 1
- 239000004141 Sodium laurylsulphate Substances 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 229940009098 aspartate Drugs 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229940071089 sarcosinate Drugs 0.000 description 1
- 125000003607 serino group Chemical group [H]N([H])[C@]([H])(C(=O)[*])C(O[H])([H])[H] 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- QHDCFDQKXQIXLF-UHFFFAOYSA-N sulfuric acid sulfurous acid Chemical compound OS(O)=O.OS(O)(=O)=O QHDCFDQKXQIXLF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
样品 | 仲醇聚氧乙烯醚(ppm) |
配方16 | 5 |
配方15 | 50 |
配方17 | 100 |
配方18 | 500 |
配方19 | 1000 |
配方20 | 5000 |
样品 | pH |
配方15 | 7.00 |
配方21 | 3.00 |
配方22 | 5.00 |
配方23 | 9.00 |
配方24 | 11.00 |
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101112637 | 2012-04-10 | ||
TW101112637A TWI456013B (zh) | 2012-04-10 | 2012-04-10 | 研磨液組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103361028A CN103361028A (zh) | 2013-10-23 |
CN103361028B true CN103361028B (zh) | 2015-09-16 |
Family
ID=49291572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210175726.XA Active CN103361028B (zh) | 2012-04-10 | 2012-05-31 | 研磨液组成物 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9039925B2 (zh) |
JP (1) | JP5613283B2 (zh) |
CN (1) | CN103361028B (zh) |
SG (1) | SG194277A1 (zh) |
TW (1) | TWI456013B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013071475A1 (zh) * | 2011-11-14 | 2013-05-23 | 广州天至环保科技有限公司 | 一种增强pcb镀层抗氧化和耐腐蚀性能的水相封孔剂及其使用方法 |
CN104745085B (zh) * | 2013-12-25 | 2018-08-21 | 安集微电子(上海)有限公司 | 一种用于钴阻挡层抛光的化学机械抛光液 |
CN104745086A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种用于阻挡层平坦化的化学机械抛光液及其使用方法 |
CN116288366A (zh) | 2014-10-21 | 2023-06-23 | Cmc材料股份有限公司 | 腐蚀抑制剂以及相关的组合物及方法 |
EP3210238B1 (en) | 2014-10-21 | 2019-06-26 | Cabot Microelectronics Corporation | Cobalt polishing accelerators |
US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
WO2016065067A1 (en) | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Cobalt dishing control agents |
US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
US9528030B1 (en) | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
KR102122125B1 (ko) * | 2018-06-01 | 2020-06-11 | 주식회사 케이씨텍 | 연마용 슬러리 조성물 |
CN111378366B (zh) * | 2018-12-27 | 2022-11-18 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其应用 |
CN110158090A (zh) * | 2019-06-26 | 2019-08-23 | 珠海横琴思国科技发展有限公司 | 一种环保的反应型抛光光亮剂组合物及其制备方法与应用 |
CN113122143B (zh) * | 2019-12-31 | 2024-03-08 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其在铜抛光中的应用 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW584658B (en) * | 2001-04-12 | 2004-04-21 | Rodel Inc | Polishing composition having a surfactant |
CN1599951A (zh) * | 2001-12-05 | 2005-03-23 | 卡伯特微电子公司 | 使用聚合物络合剂对铜cmp的方法 |
KR100516886B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
CN101117548A (zh) * | 2006-08-02 | 2008-02-06 | 福吉米股份有限公司 | 抛光用组合物以及抛光方法 |
CN101191036A (zh) * | 2006-11-27 | 2008-06-04 | 第一毛织株式会社 | 一种用于化学机械抛光的淤浆组合物及其前体组合物 |
TW201002804A (en) * | 2008-03-25 | 2010-01-16 | Fujifilm Corp | Metal polishing composition and chemical mechanical polishing method |
CN101821354A (zh) * | 2007-10-10 | 2010-09-01 | 第一毛织株式会社 | 用于金属的化学机械抛光的浆料组合物以及使用其的抛光方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
JP2003289054A (ja) * | 2002-03-28 | 2003-10-10 | Asahi Kasei Corp | 金属用研磨組成物の製造方法 |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
TW200407420A (en) * | 2002-11-05 | 2004-05-16 | Eternal Chemical Co Ltd | Aqueous cleaning composition for post chemical mechanical planarization |
US7153335B2 (en) * | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
US20060278614A1 (en) | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
CN101049681A (zh) * | 2007-05-11 | 2007-10-10 | 江苏海迅实业有限公司 | 硅片研磨表面划伤的控制方法 |
JP5371207B2 (ja) * | 2007-06-08 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
US8383003B2 (en) * | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
-
2012
- 2012-04-10 TW TW101112637A patent/TWI456013B/zh active
- 2012-05-31 CN CN201210175726.XA patent/CN103361028B/zh active Active
- 2012-08-07 US US13/568,130 patent/US9039925B2/en active Active
- 2012-08-22 SG SG2012061958A patent/SG194277A1/en unknown
-
2013
- 2013-04-10 JP JP2013082334A patent/JP5613283B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW584658B (en) * | 2001-04-12 | 2004-04-21 | Rodel Inc | Polishing composition having a surfactant |
CN1599951A (zh) * | 2001-12-05 | 2005-03-23 | 卡伯特微电子公司 | 使用聚合物络合剂对铜cmp的方法 |
KR100516886B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
CN101117548A (zh) * | 2006-08-02 | 2008-02-06 | 福吉米股份有限公司 | 抛光用组合物以及抛光方法 |
CN101191036A (zh) * | 2006-11-27 | 2008-06-04 | 第一毛织株式会社 | 一种用于化学机械抛光的淤浆组合物及其前体组合物 |
CN101821354A (zh) * | 2007-10-10 | 2010-09-01 | 第一毛织株式会社 | 用于金属的化学机械抛光的浆料组合物以及使用其的抛光方法 |
TW201002804A (en) * | 2008-03-25 | 2010-01-16 | Fujifilm Corp | Metal polishing composition and chemical mechanical polishing method |
Also Published As
Publication number | Publication date |
---|---|
US20130264515A1 (en) | 2013-10-10 |
JP2013219361A (ja) | 2013-10-24 |
SG194277A1 (en) | 2013-11-29 |
CN103361028A (zh) | 2013-10-23 |
US9039925B2 (en) | 2015-05-26 |
TW201341489A (zh) | 2013-10-16 |
JP5613283B2 (ja) | 2014-10-22 |
TWI456013B (zh) | 2014-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103361028B (zh) | 研磨液组成物 | |
KR102422713B1 (ko) | 세리아-코팅된 실리카 연마재를 사용하는 배리어 화학 기계적 평탄화 슬러리 | |
CN1696235B (zh) | 阻挡层抛光溶液 | |
US20170088748A1 (en) | Stop-on silicon containing layer additive | |
US9978609B2 (en) | Low dishing copper chemical mechanical planarization | |
TW526249B (en) | Polishing composition | |
EP1182242B1 (en) | Polishing composition and polishing method employing it | |
CN102585704B (zh) | 化学机械抛光浆料组合物及使用其制造半导体器件的方法 | |
JP2013138053A (ja) | 研磨用組成物 | |
JP2010512657A (ja) | ゼオライトを含有する銅化学機械的研磨組成物 | |
TWI664280B (zh) | 高溫cmp組成物及用於使用其之方法 | |
CN101665664A (zh) | 季铵盐型阳离子表面活性剂和一种化学机械抛光液的应用 | |
KR20130074492A (ko) | 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법 | |
WO2021067151A1 (en) | Low dishing copper chemical mechanical planarization | |
KR101809778B1 (ko) | 실리콘 웨이퍼 가공액 및 실리콘 웨이퍼 가공 방법 | |
US9593260B2 (en) | CMP slurry composition for polishing copper, and polishing method using same | |
KR102640744B1 (ko) | 텅스텐 막 연마 슬러리 조성물 | |
CN101724347A (zh) | 一种化学机械抛光液 | |
CN103965788A (zh) | 一种碱性抛光液及抛光方法 | |
KR101296256B1 (ko) | 저 부식성 화학 기계적 평탄화 조성물 및 방법 | |
CN101418191B (zh) | 一种金属铜的抛光液 | |
CN115746711A (zh) | 一种铝合金镜面抛光液以及抛光方法 | |
KR101134588B1 (ko) | 금속 배선용 화학 기계적 연마 조성물 | |
KR20090001221A (ko) | 반도체 구리 웨이퍼 연마용 씨엠피 슬러리 제조방법과 이에의해 제조한 씨엠피 슬러리 | |
CN103773244A (zh) | 一种碱性化学机械抛光液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200115 Address after: Room 250, 6060 parkland Avenue, Mayfield heights, Ohio, USA Patentee after: American Business Flow Address before: 3 / F 6, 408 Ruiguang Road, Neihu district, Taipei, Taiwan, China Patentee before: Taiwan ferro Trading Co.,Ltd. Effective date of registration: 20200115 Address after: 3 / F 6, 408 Ruiguang Road, Neihu district, Taipei, Taiwan, China Patentee after: Taiwan ferro Trading Co.,Ltd. Address before: 33 Dongyuan Road, Zhongli, Taoyuan County, Taiwan, China Patentee before: UWIZ Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |