TW200513525A - Chemical-mechanical planarization composition having PVNO and associated method for use - Google Patents

Chemical-mechanical planarization composition having PVNO and associated method for use

Info

Publication number
TW200513525A
TW200513525A TW093130132A TW93130132A TW200513525A TW 200513525 A TW200513525 A TW 200513525A TW 093130132 A TW093130132 A TW 093130132A TW 93130132 A TW93130132 A TW 93130132A TW 200513525 A TW200513525 A TW 200513525A
Authority
TW
Taiwan
Prior art keywords
composition
associated method
mechanical planarization
pvno
chemical
Prior art date
Application number
TW093130132A
Other languages
Chinese (zh)
Other versions
TWI247796B (en
Inventor
Junaid Ahmed Siddiqui
Bin Hu
Original Assignee
Dupont Air Prod Nanomaterials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dupont Air Prod Nanomaterials filed Critical Dupont Air Prod Nanomaterials
Publication of TW200513525A publication Critical patent/TW200513525A/en
Application granted granted Critical
Publication of TWI247796B publication Critical patent/TWI247796B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Abstract

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a polyvinylpyridine-N-oxide polymer. The composition possesses high selectivities for metal and barrier material removal in metal CMP. The composition may further comprise and oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).
TW093130132A 2003-10-10 2004-10-05 Chemical-mechanical planarization composition having PVNO and associated method for use TWI247796B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/683,231 US20050079803A1 (en) 2003-10-10 2003-10-10 Chemical-mechanical planarization composition having PVNO and associated method for use

Publications (2)

Publication Number Publication Date
TW200513525A true TW200513525A (en) 2005-04-16
TWI247796B TWI247796B (en) 2006-01-21

Family

ID=34422691

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130132A TWI247796B (en) 2003-10-10 2004-10-05 Chemical-mechanical planarization composition having PVNO and associated method for use

Country Status (3)

Country Link
US (2) US20050079803A1 (en)
JP (1) JP2005175437A (en)
TW (1) TWI247796B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456013B (en) * 2012-04-10 2014-10-11 Uwiz Technology Co Ltd Polishing slurry composition

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US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
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US20060249482A1 (en) * 2003-05-12 2006-11-09 Peter Wrschka Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
JP2008546036A (en) * 2005-06-07 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Metal and dielectric compatible sacrificial antireflective coating purification and removal composition
WO2007015551A1 (en) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited Polishing composition and polishing method
JP2007059128A (en) * 2005-08-23 2007-03-08 Canon Inc Organic electroluminescent display device and manufacturing method thereof
JP2007088379A (en) * 2005-09-26 2007-04-05 Fujifilm Corp Aqueous polishing slurry and chemical mechanical polishing method
JP2007095713A (en) * 2005-09-26 2007-04-12 Fujifilm Corp Polishing slurry for barrier layer
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
JP2007299942A (en) * 2006-04-28 2007-11-15 Fujifilm Corp Metal polishing composition, and chemical-mechanical polishing method using it
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
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US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US7915169B2 (en) * 2007-11-02 2011-03-29 Spansion Llc Processes for forming electronic devices including polishing metal-containing layers
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
CN103131330B (en) 2008-02-01 2015-09-23 福吉米株式会社 Composition for polishing and use its Ginding process
WO2009150938A1 (en) * 2008-06-11 2009-12-17 信越化学工業株式会社 Polishing agent for synthetic quartz glass substrate
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
US8506831B2 (en) 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
TWI465556B (en) * 2010-09-14 2014-12-21 Everlight Chem Ind Corp Polishing composition for primary polishing of wafer
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
US9862862B2 (en) * 2013-05-15 2018-01-09 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
US11085011B2 (en) 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
CN117659393A (en) * 2022-08-31 2024-03-08 华为技术有限公司 Leveling agent, composition and application thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456013B (en) * 2012-04-10 2014-10-11 Uwiz Technology Co Ltd Polishing slurry composition

Also Published As

Publication number Publication date
JP2005175437A (en) 2005-06-30
TWI247796B (en) 2006-01-21
US20050079803A1 (en) 2005-04-14
US20050215183A1 (en) 2005-09-29

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MM4A Annulment or lapse of patent due to non-payment of fees