JP6687563B2 - コバルト含有基材の化学的機械的研磨(cmp) - Google Patents
コバルト含有基材の化学的機械的研磨(cmp) Download PDFInfo
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- JP6687563B2 JP6687563B2 JP2017118409A JP2017118409A JP6687563B2 JP 6687563 B2 JP6687563 B2 JP 6687563B2 JP 2017118409 A JP2017118409 A JP 2017118409A JP 2017118409 A JP2017118409 A JP 2017118409A JP 6687563 B2 JP6687563 B2 JP 6687563B2
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- Prior art keywords
- acid
- cmp
- chemical mechanical
- mechanical polishing
- alanine
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- 239000000126 substance Substances 0.000 title claims description 62
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- 239000000758 substrate Substances 0.000 title claims description 32
- 239000000203 mixture Substances 0.000 claims description 124
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N D-alpha-Ala Natural products CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 claims description 60
- -1 phosphoric acid compound Chemical class 0.000 claims description 44
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- 239000002245 particle Substances 0.000 claims description 33
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
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- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 25
- 229910019142 PO4 Inorganic materials 0.000 claims description 25
- 239000004094 surface-active agent Substances 0.000 claims description 25
- 229950010030 dl-alanine Drugs 0.000 claims description 24
- 239000007800 oxidant agent Substances 0.000 claims description 24
- 230000007797 corrosion Effects 0.000 claims description 22
- 238000005260 corrosion Methods 0.000 claims description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 22
- 239000010452 phosphate Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
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- 238000000034 method Methods 0.000 claims description 17
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- 230000004888 barrier function Effects 0.000 claims description 15
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 15
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- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 2
- 150000001295 alanines Chemical class 0.000 description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000001580 bacterial effect Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical class OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 2
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 2
- 235000019797 dipotassium phosphate Nutrition 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002538 fungal effect Effects 0.000 description 2
- YWTYJOPNNQFBPC-UHFFFAOYSA-N imidacloprid Chemical compound [O-][N+](=O)\N=C1/NCCN1CC1=CC=C(Cl)N=C1 YWTYJOPNNQFBPC-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 230000002335 preservative effect Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 2
- 229960002218 sodium chlorite Drugs 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229940116269 uric acid Drugs 0.000 description 2
- JLHMJWHSBYZWJJ-UHFFFAOYSA-N 1,2-thiazole 1-oxide Chemical class O=S1C=CC=N1 JLHMJWHSBYZWJJ-UHFFFAOYSA-N 0.000 description 1
- HNSDLXPSAYFUHK-UHFFFAOYSA-N 1,4-bis(2-ethylhexyl) sulfosuccinate Chemical compound CCCCC(CC)COC(=O)CC(S(O)(=O)=O)C(=O)OCC(CC)CCCC HNSDLXPSAYFUHK-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KKUKTXOBAWVSHC-UHFFFAOYSA-N Dimethylphosphate Chemical compound COP(O)(=O)OC KKUKTXOBAWVSHC-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RYYWUUFWQRZTIU-UHFFFAOYSA-N Thiophosphoric acid Chemical compound OP(O)(S)=O RYYWUUFWQRZTIU-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001299 aldehydes Chemical group 0.000 description 1
- 150000001408 amides Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- RYTYSMSQNNBZDP-UHFFFAOYSA-N cobalt copper Chemical compound [Co].[Cu] RYTYSMSQNNBZDP-UHFFFAOYSA-N 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000002337 glycosamines Chemical class 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052816 inorganic phosphate Inorganic materials 0.000 description 1
- QPPQHRDVPBTVEV-UHFFFAOYSA-N isopropyl dihydrogen phosphate Chemical compound CC(C)OP(O)(O)=O QPPQHRDVPBTVEV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- ONQDVAFWWYYXHM-UHFFFAOYSA-M potassium lauryl sulfate Chemical compound [K+].CCCCCCCCCCCCOS([O-])(=O)=O ONQDVAFWWYYXHM-UHFFFAOYSA-M 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003573 thiols Chemical group 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- HQUQLFOMPYWACS-UHFFFAOYSA-N tris(2-chloroethyl) phosphate Chemical compound ClCCOP(=O)(OCCCl)OCCCl HQUQLFOMPYWACS-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本特許出願は、アメリカ仮出願(第62/350,844号 出願日2016年6月16日)の利益を主張する。
このCMP研磨組成物は、以下を含有する:
研磨剤;
α‐アミノ基を含むアラニン;
H2PO4 1-、HPO4 2-、又はPO4 3-を含むリン酸化合物;
腐食防止剤;
酸化剤;
水;並びに
場合により
アミン化合物;
キレート化剤;
pH調整剤;
殺生物剤;及び
界面活性剤;
ここで、化学的機械的研磨(CMP)研磨組成物は、pHが2.0〜約12;好ましくは6.0〜10.0;そしてより好ましくは7.0〜9.0;最も好ましくは7.5〜8.5である。
a)第一の材料及び少なくとも一つの第二の材料を含む表面を有する半導体基材を提供すること;
b)ここで、第一の材料は、Coであり、そして第二の材料は、誘電体膜、低‐k及び超低‐k膜、並びにバリア膜からなる群より選択される;
c)研磨パッドを提供すること;
d)以下を含む化学的機械的研磨組成物を提供すること;
研磨剤;
α‐アミノ基を含むアラニン;
H2PO4 1-、HPO4 2-、又はPO4 3-を含むリン酸化合物;
腐食防止剤;
酸化剤;
水;並びに
場合により
アミン化合物;
キレート化剤;
pH調整剤;
殺生物剤;及び
界面活性剤;
ここで、化学的機械的研磨(CMP)研磨組成物は、pHが2.0〜約12;好ましくは6.0〜10.0;そしてより好ましくは7.0〜9.0;最も好ましくは7.5〜8.5である;
並びに
e)半導体基材の表面を研磨し、第一の材料を選択的に除去すること;
ここで、表面の少なくとも一部は、研磨パッド及び化学的機械的研磨組成物の両方と接触し;そして第一の材料の除去速度と第二の材料の除去速度との比は、1以上であって;好ましくは10よりも大きく;より好ましくは50よりも大きく、そして最も好ましくは100よりも大きい。
第一の材料及び少なくとも一つの第二の材料を含む表面を有する半導体基材であって、第一の材料は、Coであり、そして第二の材料は、誘電体膜(例えばTEOS,SixNy(式中、1.0<x<3.0、1.33<y<4.0))、低‐k及び超低‐k膜、並びにバリア膜(例えば、Ta、TaN、Ti及びTiN膜)からなる群より選択される、半導体基材;
研磨パッド;並びに
以下を含む化学的機械的研磨組成物:
研磨剤;
α‐アミノ基を含むアラニン;
PO4 3-を含むリン酸化合物;
腐食防止剤;
酸化剤;
水;並びに
場合により
アミン化合物;
キレート化剤;
pH調整剤;
殺生物剤;及び
界面活性剤;
ここで、化学的機械的研磨(CMP)研磨組成物が有するpHは、2.0〜約12;好ましくは6.0〜10.0;そしてより好ましくは7.0〜9.0;最も好ましくは7.5〜8.5である;
ここで、表面の少なくとも一部は、研磨パッド及び化学的機械的研磨組成物の両方に接触する。
[研磨パッド]
Dow Chemicals Corp.から供給された、Dow’s IC1010パッドをCMPの間に使用した。
Å:オングストローム‐長さの単位
BP:背圧、psi単位で表す
CMP:化学的機械的平坦化=化学的機械的研磨
CS:キャリア速度
DF:ダウンフォース:CMPの間に課される圧力、単位:psi
min:分
ml:ミリリットル
mV:ミリボルト
psi:ポンド毎平方インチ
PS:研磨ツールのプラテン回転速度、rpm(回転/分)で表す
SF:研磨組成物流速、ml/分
‐コバルト除去速度(Co RR)を、CMPツールのダウン圧1.5psiで計測した。
[パラメーター]
Å:オングストローム‐長さの単位
BP:背圧、psi単位で表す
CMP:化学的機械的平坦化=化学的機械的研磨
CS:キャリア速度
DF:ダウンフォース:CMPの間に課される圧力、単位psi
min:分
ml:ミリリットル
mV:ミリボルト
psi:ポンド毎平方インチ
PS:研磨ツールのプラテン回転速度、rpm(回転/分)で表す
SF:研磨組成物流速、ml/分
Musashino DL‐アラニンパウダーを、イオンクロマトグラフィー(IC)分析のために調製した。
DL‐アラニン(Musashino)のDIW希釈液を、高速液体クロマトグラフィー(HPLC)分析のために調製した。
DL‐アラニンの供給業者を利用して3種のCMP研磨組成物を調製し、そして組成物を、リン酸二カリウム(リン酸水素二カリウム)又はリン酸水素二アンモニウムを用いてドープした。ドープしていない組成物を、対照として使用した。
2種のコバルトバルクCMP研磨組成物を、アラニンをまったく有しない組成物にリン酸アンモニウム及びリン酸カリウムをドープすることによって調製した。
組成物は、約70nmのMPSを有する0.6210wt%の高純度コロイドシリカ粒子;殺生物剤としての0.0002wt%のKathon II;0.002wt%のエチレンジアミン;0.00025wt%の1,3,5‐トリス(2‐ヒドロキシエチル)イソシアヌレート;0.0946wt%の3‐アミノ‐1,2,4‐トリアゾール;1.10wt%のDL‐アラニン;pH調整剤としての水酸化カリウム;及び酸化エージェントとしての1.0wt%のH2O2;並びに表5に示すように、種々の濃度のリン酸アンモニウムを含んだ。組成物の残部は、DI水であった。組成物のpH値は、およそ8.0であった。
18種のコバルトバルクCMP組成物を、DL‐アラニン(Musashino)を用いて、そして各種濃度のリン酸水素二アンモニウムでドープすることによって、調製した。
組成物は、約70nmのMPSを有する0.6210wt.%の高純度コロイドシリカ粒子;殺生物剤としての0.0002wt%のKathon II;0.002wt%のエチレンジアミン;0.00025wt%の1,3,5‐トリス(2‐ヒドロキシエチル)イソシアヌレート;0.0946wt.%の3‐アミノ‐1,2,4‐トリアゾール;1.10wt%のDL‐アラニン;pH調整剤としての水酸化カリウム;及び酸化エージェントとしての1.0wt%のH2O2、並びに0.0010wt%(10ppm)のリン酸水素二アンモニウムを含んだ。組成物の残部は、DIWであった。組成物のpH値は、およそ8.0であった。
異なるアラニンを使用したCoスラリーを検討した。試験したアラニンは、DL‐アラニン(Musashino)、ベータアラニン(Yuki Gosei Kogyo Co.)であった。
Claims (11)
- 0.005wt%〜25wt%の研磨剤;
0.05wt%〜5wt%のα‐アラニン;
2ppm〜100ppmの、H2PO4 1-、HPO4 2-又はPO4 3-を含むリン酸化合物;
0.0005wt%〜0.25wt%の腐食防止剤;
0.005wt%〜10wt%の酸化剤;及び
水;
を含む、コバルト含有基材のための化学的機械的研磨(CMP)研磨組成物であって、2.0〜12のpHを有する化学的機械的研磨(CMP)研磨組成物。 - 0.0001wt%〜0.20wt%のアミン化合物;
0.01wt%〜10wt%のキレート化剤;
0.01wt%〜0.5wt%のpH調整剤;
0.00001wt%〜0.10wt%の殺生物剤;及び/又は
0.0005wt%〜0.15wt%の界面活性剤;
のうち少なくとも一つをさらに含む、請求項1に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物。 - 請求項1又は2に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物であって、
前記研磨剤は、ナノサイズのコロイドシリカ若しくは高純度コロイドシリカ粒子;アルミナ、チタニア、ジルコニア、セリア及びこれらの組合せからなる群から選択されるナノサイズの無機金属酸化物粒子;ナノサイズのダイアモンド粒子;ナノサイズの窒化ケイ素粒子;モノモーダル、バイモーダル、若しくはマルチモーダルコロイド研磨粒子;有機ポリマーをベースとするソフト研磨剤;表面被覆された若しくは改変された研磨剤;並びにそれらの組合せからなる群より選ばれ;並びに/若しくは、前記研磨剤の量は、0.05wt%〜5wt%であり;
前記アラニンは、D‐アラニン、L‐アラニン、DL‐アラニン、及びこれらの組合せからなる群より選ばれ;並びに/若しくは前記アラニンの量は、0.5wt%〜2wt%であり;
H2PO4 1-、HPO4 2―又はPO4 3-を含む前記リン酸化合物は、リン酸イオン、リン酸一水素イオン、リン酸二水素、リン酸三水素、及びそれらの組合せからなる群より選ばれる形態であり;並びに/若しくは前記リン酸化合物の量は、2ppm〜50ppmであり;
前記腐食防止剤は、1,2,4‐トリアゾール及びその誘導体、ベンゾトリアゾール及びその誘導体、1,2,3‐トリアゾール及びその誘導体、ピラゾール及びその誘導体、イミダゾール及びその誘導体、ベンゾイミダゾール及びその誘導体、ベンゾイミダゾール及びその誘導体、イソシアヌレート及びその誘導体、並びにそれらの組合せからなる群より選ばれ;並びに/若しくは前記腐食防止剤の量は、0.0025wt%〜0.25wt%であり;
前記酸化剤は、過ヨウ素酸、過酸化水素、ヨウ素酸カリウム、過マンガン酸カリウム、過硫酸アンモニウム、モリブデン酸アンモニウム、硝酸第二鉄、硝酸、硝酸カリウム、及びそれらの混合物からなる群より選ばれ;並びに/若しくは前記酸化剤の量は、0.25wt%〜3wt%であり;並びに/又は
6.0〜10のpHを有する、前記化学的機械的研磨(CMP)研磨組成物。 - 以下である、請求項2に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物:
前記キレート化剤は、0.1wt%〜5wt%の量で存在し、かつ/若しくは、前記キレート化剤は、グリシン、セリン、プロリン、ヒスチジン、イソロイシン、ロイシン、リジン、メチオニン、フェニルアラニン、トレオニン、トリプトファン、バリン、アルギニン、アスパラギン、アスパラギン酸、システイン、グルタミン酸、グルタミン、オルニチン、ピコリン酸、セレノシステイン、チロシン、サルコシン、ビシン、トリシン、アセグルタミド、N‐アセチルアスパラギン酸、アセチルカルニチン、アセチルシステイン、N‐アセチルグルタミン酸、アセチルロイシン、アシビシン、S‐アデノシル‐L‐ホモシステイン、アガリチン、アラノシン、アミノ馬尿酸、L‐アルギニンエチルエステル、アスパルテーム、アスパルチルグルコサミン、ベンジルメルカプツル酸、ビオシチン、ブリバニブアラニネート、カルボシステイン、N(6)‐カルボキシメチルリジン、カルグルミン酸、シラスタチン、シチオロン、コプリン、ジブロモチロシン、ジヒドロキシフェニルグリシン、エフロルニチン、フェンクロニン、4‐フルオロ‐L‐スレオニン、N‐ホルミルメチオニン、ガンマ‐L‐グルタミル‐L‐システイン、4‐(γ‐グルタミルアミノ)ブタン酸、グルタウリン、グリコシアミン、ハダシジン、ヘパプレッシン(hepapressin)、リシノプリル、リメサイクリン、N‐メチル‐D‐アスパラギン酸、N‐メチル‐L‐グルタミン酸、ミラセミド、ニトロソプロリン、ノカルジシン A、ノパリン、オクトピン、オンブラブリン、オパイン、オルタニル酸、オキサセプロール、ポリリジン、レマセミド、サリチル尿酸、シルクアミノ酸、スタムピジン(stampidine)、タブトキシン(tabtoxin)、テトラゾリルグリシン、チオルファン、チメクタシン(Thymectacin)、チオプロニン、トリプトファントリプトフィルキノン、バラシクロビル、バルガンシクロビル、及びそれらの組合せからなる群から選ばれ;
前記アミン化合物は、0.0010wt%〜0.10wt%の量で存在し、かつ/若しくは、前記アミン化合物は、エチレンジアミン、プロピレンジアミン、同一分子内に複数のアミノ基を有する有機アミン化合物、及びこれらの組合せからなる群から選ばれ;
前記pH調整剤は、0.05wt%〜0.15wt%の量で存在し、かつ/若しくは、前記pH調整剤は、硝酸、塩酸、硫酸、リン酸、水酸化ナトリウム、水酸化カリウム、水酸化アンモニウム、水酸化テトラアルキルアンモニウム、有機アミン類、及びそれらの混合物からなる群から選ばれ;
前記殺生物剤は、0.0001wt%〜0.005wt%の量で存在し、かつ/若しくは、前記殺生物剤は、メチルイソチアゾリノン;メチルクロロイソチアゾリノン;テトラメチルアンモニウムクロリド、テトラエチルアンモニウムクロリド、テトラプロピルアンモニウムクロリド、アルキルベンジルジメチルアンモニウムクロリド、及び水酸化アルキルベンジルジメチルアンモニウムからなる群より選ばれる第4級アンモニウム化合物、ここでアルキル鎖は1〜20個の炭素原子の範囲である;亜塩素酸塩及び次亜塩素酸ナトリウムからなる群より選ばれるクロロ含有化合物;ビグアニド;アルデヒド;エチレンオキシド;金属塩;イソチアゾリノン;インドホール(indophor);並びにこれらの組合せからなる群から選ばれ;並びに/又は
前記界面活性剤は、0.001wt%〜0.05wt%の量で存在し、かつ/若しくは、前記界面活性剤は、アルコールエトキシレート、アセチレンジオール界面活性剤、及びそれらの組合せからなる群より選ばれるノニオン性界面活性剤;二級アルカンスルホン酸塩、ドデシル硫酸塩、ナトリウム塩、ラウリル硫酸塩、カリウム塩、及びそれらの組合せからなる群より選ばれるアニオン性界面活性剤;第四級アンモニウム系界面活性剤からなる群より選ばれるカチオン性界面活性剤;ベタイン及びアミノ酸誘導体系界面活性剤からなる群より選ばれる双性イオン性界面活性剤;並びにそれらの組合せからなる群から選ばれる。 - 前記リン酸化合物は、リン酸の無機塩又は有機リン酸化合物である、請求項1〜4のいずれか一項に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物。
- 0.1wt%〜2.5wt%の、ナノサイズのコロイドシリカ又は高純度コロイドシリカ粒子;0.825wt%〜1.65wt%の、D‐アラニン、L‐アラニン、DL‐アラニン、及びそれらの組合せからなる群より選ばれるアラニン;5ppm〜20ppmの、一塩基性、二塩基性、又は三塩基性状態にある、リン酸アンモニウム又はリン酸カリウム;0.05wt%〜0.15wt%の、1,2,4‐トリアゾール及びその誘導体、ベンゾトリアゾール及びその誘導体、1,2,3‐トリアゾール及びその誘導体、ピラゾール及びその誘導体、イミダゾール及びその誘導体、ベンゾイミダゾール及びその誘導体、ベンゾイミダゾール及びその誘導体、イソシアヌレート及びその誘導体、並びにそれらの組合せからなる群より選ばれる腐食防止剤;0.5wt%〜1.5wt%の、過ヨウ素酸、過酸化水素、ヨウ素酸カリウム、過マンガン酸カリウム、過硫酸アンモニウム、モリブデン酸アンモニウム、硝酸第二鉄、硝酸、硝酸カリウム、又はそれらの組合せ;を含み、7.0〜9.0のpHを有する、請求項1〜5のいずれか一項に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物。
- 以下のうち、少なくとも1つをさらに含む、請求項4に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物:
0.5wt%〜2wt%の、グリシン、ピコリン酸、又はそれらの組合せ;
0.0025wt%〜0.050wt%の、エチレンジアミン、プロピレンジアミン、同一分子内に複数のアミノ基を有する有機アミン化合物、又はそれらの組合せ;
0.05wt%〜0.15wt%の、硝酸、塩酸、硫酸、リン酸、水酸化ナトリウム、水酸化カリウム、水酸化アンモニウム、水酸化テトラアルキルアンモニウム、又はそれらの混合物;
0.00015wt%〜0.0025wt%の、メチルイソチアゾリノン、メチルクロロイソチアゾリノン、ベンズイソチアゾリノン、及びそれらの組合せからなる群より選ばれる、イソチアゾリノン;並びに
0.0025wt%〜0.025wt%の前記界面活性剤。 - 高純度コロイドシリカ粒子;DL‐アラニン;一塩基性、二塩基性又は三塩基性状態のリン酸アンモニウム又はリン酸カリウム;3‐アミノ‐1,2,4‐トリアゾール、1,3,5‐トリス(2‐ヒドロキシエチル)イソシアヌレート、又は3‐アミノ‐1,2,4‐トリアゾール及び1,3,5‐トリス(2‐ヒドロキシエチル)イソシアヌレートの組合せ;過酸化水素;並びにエチレンジアミンを含む、請求項6又は7に記載のコバルト含有基材のための化学的機械的研磨(CMP)研磨組成物。
- a)第一の材料及び少なくとも1種の第二の材料を含む表面を有する半導体基材を提供すること;ここで、前記第一の材料は、Coであり、かつ、前記第二の材料は、誘電体膜、低‐k及び超低‐k膜、並びにバリア膜からなる群より選ばれる;
b)研磨パッドを提供すること;
請求項1〜8のいずれか一項に記載の化学的機械的研磨組成物を提供すること;
並びに、
c)前記半導体基材の前記表面を研磨し、前記第一の材料を選択的に除去すること;
を含む選択的化学的機械的研磨の方法であって、前記表面の少なくとも一部は、前記研磨パッド及び前記化学的機械的研磨組成物の両方と接触しており;かつ、前記第一の材料の除去速度と前記第二の材料の除去速度との比は50以上である、選択的化学的機械的研磨の方法。 - 前記第二の材料は、TEOS、SixNy(式中、1.0<x<3.0、1.33<y<4.0)、Ta、TaN、Ti,及びTiNからなる群より選ばれる、請求項9に記載の選択的な化学的機械的研磨の方法。
- 第一の材料及び少なくとも一種の第二の材料を含む表面を有する半導体基材であって、前記第一の材料は、Coであり、かつ、前記第二の材料は、場合により請求項10において定義される通りの、誘電体膜、低‐k及び超低‐k膜、並びにバリア膜からなる群より選ばれる半導体基材;
研磨パッド;
請求項1〜8のいずれか一項に記載の化学的機械的研磨組成物;
を含む化学的機械的研磨(CMP)システムであって、かつ、前記表面の少なくとも一部は、前記研磨パッド及び前記化学的機械的研磨組成物の両方と接触している、化学的機械的研磨(CMP)システム。
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EP3257910B1 (en) | 2019-03-27 |
SG10201704912YA (en) | 2018-01-30 |
IL252846A0 (en) | 2017-08-31 |
EP3257910A1 (en) | 2017-12-20 |
KR20170142123A (ko) | 2017-12-27 |
KR101982713B1 (ko) | 2019-05-27 |
IL252846B (en) | 2021-08-31 |
US20170362466A1 (en) | 2017-12-21 |
TW201800520A (zh) | 2018-01-01 |
TWI648359B (zh) | 2019-01-21 |
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JP2018014487A (ja) | 2018-01-25 |
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