SG10201704912YA - Chemical mechanical polishing (cmp) of cobalt-containing substrate - Google Patents
Chemical mechanical polishing (cmp) of cobalt-containing substrateInfo
- Publication number
- SG10201704912YA SG10201704912YA SG10201704912YA SG10201704912YA SG10201704912YA SG 10201704912Y A SG10201704912Y A SG 10201704912YA SG 10201704912Y A SG10201704912Y A SG 10201704912YA SG 10201704912Y A SG10201704912Y A SG 10201704912YA SG 10201704912Y A SG10201704912Y A SG 10201704912YA
- Authority
- SG
- Singapore
- Prior art keywords
- cmp
- cobalt
- mechanical polishing
- chemical mechanical
- containing substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662350844P | 2016-06-16 | 2016-06-16 | |
US15/615,236 US10745589B2 (en) | 2016-06-16 | 2017-06-06 | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201704912YA true SG10201704912YA (en) | 2018-01-30 |
Family
ID=59067570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201704912YA SG10201704912YA (en) | 2016-06-16 | 2017-06-14 | Chemical mechanical polishing (cmp) of cobalt-containing substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US10745589B2 (en) |
EP (1) | EP3257910B1 (en) |
JP (1) | JP6687563B2 (en) |
KR (1) | KR101982713B1 (en) |
CN (1) | CN107523219B (en) |
IL (1) | IL252846B (en) |
SG (1) | SG10201704912YA (en) |
TW (1) | TWI648359B (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI664280B (en) * | 2016-10-11 | 2019-07-01 | Fujifilm Electronic Materials U.S.A., Inc. | Elevated temperature cmp compositions and methods for use thereof |
WO2018217628A1 (en) * | 2017-05-25 | 2018-11-29 | Fujifilm Planar Solutions, LLC | Chemical mechanical polishing slurry for cobalt applications |
JP7108042B2 (en) * | 2018-09-12 | 2022-07-27 | 富士フイルム株式会社 | Chemical solution, substrate processing method |
CN111378379B (en) * | 2018-12-29 | 2022-08-05 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution and application thereof |
JP2020188090A (en) * | 2019-05-13 | 2020-11-19 | Jsr株式会社 | Composition for semiconductor cleaning or chemical mechanical polishing for processing cobalt-containing substrate |
WO2020255602A1 (en) * | 2019-06-20 | 2020-12-24 | 富士フイルム株式会社 | Polishing solution and chemical-mechanical polishing method |
WO2020255603A1 (en) * | 2019-06-20 | 2020-12-24 | 富士フイルム株式会社 | Polishing liquid and chemical-mechanical polishing method |
EP3997193B1 (en) * | 2019-07-08 | 2023-05-03 | Basf Se | Composition, its use and a process for selectively etching silicon-germanium material |
CN110434680A (en) * | 2019-07-19 | 2019-11-12 | 大连理工大学 | A kind of chemical mechanical polishing liquid and polishing method of propeller |
US11292938B2 (en) * | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
US20210087431A1 (en) * | 2019-09-24 | 2021-03-25 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
JP7391589B2 (en) * | 2019-09-30 | 2023-12-05 | 株式会社フジミインコーポレーテッド | polishing composition |
US11732157B2 (en) * | 2019-10-15 | 2023-08-22 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
WO2021081153A1 (en) * | 2019-10-22 | 2021-04-29 | Cmc Materials, Inc. | Composition and method for dielectric cmp |
JP2023504728A (en) * | 2019-12-04 | 2023-02-06 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) Polish with High Oxide Removal Rate |
KR102367056B1 (en) * | 2020-02-27 | 2022-02-25 | 주식회사 케이씨텍 | Slurry composition for chemical mechanical polishing |
TW202138505A (en) * | 2020-03-31 | 2021-10-16 | 美商富士軟片電子材料美國股份有限公司 | Polishing compositions and methods of use thereof |
US11680186B2 (en) * | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN114477192B (en) * | 2021-12-17 | 2023-03-03 | 山东科缘新材料科技有限公司 | Silicon-zirconium composite sol, and preparation method and application thereof |
CN115011257B (en) * | 2022-06-30 | 2023-12-19 | 万华化学集团电子材料有限公司 | Tungsten polishing solution with POU service life improving function and application thereof |
CN115505932B (en) * | 2022-09-07 | 2024-02-27 | 万华化学集团电子材料有限公司 | Tungsten chemical mechanical polishing solution and application thereof |
WO2024064127A1 (en) * | 2022-09-22 | 2024-03-28 | Cmc Materials Llc | Tungsten cmp composition including a sulfur containing anionic surfactant |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US20020025762A1 (en) | 2000-02-16 | 2002-02-28 | Qiuliang Luo | Biocides for polishing slurries |
JP4202157B2 (en) | 2003-02-28 | 2008-12-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
US6971945B2 (en) | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
US20090053896A1 (en) * | 2007-08-09 | 2009-02-26 | Planar Solutions, Llc | Copper polishing slurry |
KR101481573B1 (en) * | 2008-02-12 | 2015-01-14 | 삼성전자주식회사 | Slurry composition for chemical mechanical polishing and process of chemical mechanical polishing |
JP5640977B2 (en) | 2009-07-16 | 2014-12-17 | 日立化成株式会社 | CMP polishing liquid for polishing palladium and polishing method |
CN102304327A (en) | 2011-07-05 | 2012-01-04 | 复旦大学 | Polishing solution based on metal Co for polishing process |
US20130186850A1 (en) | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
WO2014045937A1 (en) * | 2012-09-18 | 2014-03-27 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP6093846B2 (en) * | 2013-02-28 | 2017-03-08 | 株式会社フジミインコーポレーテッド | Polishing slurry for cobalt removal |
US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
US10217645B2 (en) * | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
JP2016056254A (en) | 2014-09-08 | 2016-04-21 | 株式会社フジミインコーポレーテッド | Polishing composition |
US9944828B2 (en) | 2014-10-21 | 2018-04-17 | Cabot Microelectronics Corporation | Slurry for chemical mechanical polishing of cobalt |
-
2017
- 2017-06-06 US US15/615,236 patent/US10745589B2/en active Active
- 2017-06-12 IL IL252846A patent/IL252846B/en unknown
- 2017-06-13 TW TW106119701A patent/TWI648359B/en active
- 2017-06-14 SG SG10201704912YA patent/SG10201704912YA/en unknown
- 2017-06-15 EP EP17176186.9A patent/EP3257910B1/en active Active
- 2017-06-16 JP JP2017118409A patent/JP6687563B2/en active Active
- 2017-06-16 CN CN201710459103.8A patent/CN107523219B/en active Active
- 2017-06-16 KR KR1020170076573A patent/KR101982713B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101982713B1 (en) | 2019-05-27 |
IL252846A0 (en) | 2017-08-31 |
KR20170142123A (en) | 2017-12-27 |
EP3257910A1 (en) | 2017-12-20 |
US10745589B2 (en) | 2020-08-18 |
EP3257910B1 (en) | 2019-03-27 |
CN107523219A (en) | 2017-12-29 |
CN107523219B (en) | 2020-12-29 |
JP6687563B2 (en) | 2020-04-22 |
JP2018014487A (en) | 2018-01-25 |
IL252846B (en) | 2021-08-31 |
TWI648359B (en) | 2019-01-21 |
TW201800520A (en) | 2018-01-01 |
US20170362466A1 (en) | 2017-12-21 |
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