SG10201701239TA - Polishing apparatus - Google Patents
Polishing apparatusInfo
- Publication number
- SG10201701239TA SG10201701239TA SG10201701239TA SG10201701239TA SG10201701239TA SG 10201701239T A SG10201701239T A SG 10201701239TA SG 10201701239T A SG10201701239T A SG 10201701239TA SG 10201701239T A SG10201701239T A SG 10201701239TA SG 10201701239T A SG10201701239T A SG 10201701239TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing apparatus
- polishing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016031970A JP6779633B2 (en) | 2016-02-23 | 2016-02-23 | Polishing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201701239TA true SG10201701239TA (en) | 2017-09-28 |
Family
ID=59739271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201701239TA SG10201701239TA (en) | 2016-02-23 | 2017-02-16 | Polishing apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US10933507B2 (en) |
JP (1) | JP6779633B2 (en) |
KR (1) | KR102624343B1 (en) |
SG (1) | SG10201701239TA (en) |
TW (1) | TWI773660B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MA49978A (en) | 2017-08-07 | 2020-06-17 | Sumitomo Electric Industries | CONCENTRATOR PHOTOVOLTAIC MODULE, CONCENTRATOR PHOTOVOLTAIC PANEL, CONCENTRATOR PHOTOVOLTAIC DEVICE, AND PROCESS FOR MANUFACTURING CONCENTRATOR PHOTOVOLTAIC MODULE |
US11759912B2 (en) * | 2017-12-26 | 2023-09-19 | Ebara Corporation | Magnetic element and eddy current sensor using the same |
JP7244250B2 (en) * | 2017-12-26 | 2023-03-22 | 株式会社荏原製作所 | Magnetic element and eddy current sensor using it |
JP7083279B2 (en) * | 2018-06-22 | 2022-06-10 | 株式会社荏原製作所 | How to identify the trajectory of the eddy current sensor, how to calculate the progress of polishing the substrate, how to stop the operation of the substrate polishing device and how to equalize the progress of polishing the substrate, to execute these methods. The program and the non-transient recording medium on which the program is recorded |
JP7291558B2 (en) * | 2019-07-03 | 2023-06-15 | 株式会社荏原製作所 | Eddy current sensor |
JP2022083705A (en) * | 2020-11-25 | 2022-06-06 | 株式会社荏原製作所 | Eddy current sensor |
CN114619360B (en) * | 2021-12-16 | 2023-01-03 | 清华大学 | Chemical mechanical polishing method for metal film layer |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135449A (en) * | 1982-02-04 | 1983-08-12 | Nippon Steel Corp | Eddy current flaw detecting probe |
JPH01151002A (en) * | 1987-12-09 | 1989-06-13 | Hitachi Maxell Ltd | Electromagnetic coil for magneto-optical recording |
US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
US7374477B2 (en) * | 2002-02-06 | 2008-05-20 | Applied Materials, Inc. | Polishing pads useful for endpoint detection in chemical mechanical polishing |
KR100827871B1 (en) | 2000-05-19 | 2008-05-07 | 어플라이드 머티어리얼스, 인코포레이티드 | In-situ endpoint detection and process monitoring method and apparatus for chemical mechanical polishing |
US6924641B1 (en) * | 2000-05-19 | 2005-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring a metal layer during chemical mechanical polishing |
US8485862B2 (en) * | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
US6878038B2 (en) * | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
US6602724B2 (en) * | 2000-07-27 | 2003-08-05 | Applied Materials, Inc. | Chemical mechanical polishing of a metal layer with polishing rate monitoring |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
JP2005517290A (en) * | 2002-02-06 | 2005-06-09 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for chemical mechanical polishing with eddy current monitoring system |
US7309618B2 (en) * | 2002-06-28 | 2007-12-18 | Lam Research Corporation | Method and apparatus for real time metal film thickness measurement |
US7112960B2 (en) * | 2003-07-31 | 2006-09-26 | Applied Materials, Inc. | Eddy current system for in-situ profile measurement |
US7074109B1 (en) * | 2003-08-18 | 2006-07-11 | Applied Materials | Chemical mechanical polishing control system and method |
US20050173259A1 (en) * | 2004-02-06 | 2005-08-11 | Applied Materials, Inc. | Endpoint system for electro-chemical mechanical polishing |
KR101152747B1 (en) * | 2003-10-31 | 2012-06-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Polishing endpoint detection system and method using friction sensor |
US7354334B1 (en) * | 2004-05-07 | 2008-04-08 | Applied Materials, Inc. | Reducing polishing pad deformation |
DE102007015502A1 (en) * | 2007-03-30 | 2008-10-02 | Advanced Micro Devices, Inc., Sunnyvale | CMP system with an eddy current sensor of lower height |
JP5224752B2 (en) * | 2007-09-03 | 2013-07-03 | 株式会社東京精密 | Method and apparatus for predicting completion of polishing |
JP2009076922A (en) * | 2007-09-24 | 2009-04-09 | Applied Materials Inc | Characterization of wafer edge by seamless radius measurement |
US8337278B2 (en) * | 2007-09-24 | 2012-12-25 | Applied Materials, Inc. | Wafer edge characterization by successive radius measurements |
JP5495493B2 (en) * | 2008-02-07 | 2014-05-21 | 株式会社東京精密 | Film thickness measuring apparatus and film thickness measuring method |
JP2009186433A (en) * | 2008-02-08 | 2009-08-20 | Chiba Univ | Eddy-current type sample measuring method, eddy-current sensor and eddy-current type sample measurement system |
US8454407B2 (en) * | 2008-08-05 | 2013-06-04 | Ebara Corporation | Polishing method and apparatus |
TWI408759B (en) * | 2008-11-14 | 2013-09-11 | Applied Materials Inc | Eddy current sensor with enhanced edge resolution |
JP5730747B2 (en) | 2010-12-10 | 2015-06-10 | 株式会社荏原製作所 | Eddy current sensor and polishing method and apparatus |
US20110124269A1 (en) * | 2009-07-16 | 2011-05-26 | Mitsuo Tada | Eddy current sensor and polishing method and apparatus |
CN102575998B (en) * | 2009-09-22 | 2016-03-30 | Adem有限公司 | For measuring the impedance sensing system and method for solid and liquid object formation |
US20110189856A1 (en) * | 2010-01-29 | 2011-08-04 | Kun Xu | High Sensitivity Real Time Profile Control Eddy Current Monitoring System |
US8700199B2 (en) * | 2011-03-21 | 2014-04-15 | International Business Machines Corporation | Passive resonator, a system incorporating the passive resonator for real-time intra-process monitoring and control and an associated method |
US9528814B2 (en) | 2011-05-19 | 2016-12-27 | NeoVision, LLC | Apparatus and method of using impedance resonance sensor for thickness measurement |
JP5894833B2 (en) * | 2012-03-30 | 2016-03-30 | 株式会社荏原製作所 | Eddy current sensor and polishing method and apparatus |
US9205527B2 (en) * | 2012-11-08 | 2015-12-08 | Applied Materials, Inc. | In-situ monitoring system with monitoring of elongated region |
US9281253B2 (en) * | 2013-10-29 | 2016-03-08 | Applied Materials, Inc. | Determination of gain for eddy current sensor |
JP6101621B2 (en) * | 2013-11-28 | 2017-03-22 | 株式会社荏原製作所 | Polishing equipment |
KR102326730B1 (en) * | 2014-03-12 | 2021-11-17 | 가부시키가이샤 에바라 세이사꾸쇼 | Correction method of film thickness measurement value, film thickness corrector and eddy current sensor |
JP2016087780A (en) * | 2014-10-31 | 2016-05-23 | 株式会社荏原製作所 | Polishing device and polishing method |
KR20230093548A (en) * | 2016-10-21 | 2023-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Core configuration for in-situ electromagnetic induction monitoring system |
-
2016
- 2016-02-23 JP JP2016031970A patent/JP6779633B2/en active Active
-
2017
- 2017-02-13 TW TW106104600A patent/TWI773660B/en active
- 2017-02-16 SG SG10201701239TA patent/SG10201701239TA/en unknown
- 2017-02-20 KR KR1020170022099A patent/KR102624343B1/en active IP Right Grant
- 2017-02-21 US US15/438,505 patent/US10933507B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017152471A (en) | 2017-08-31 |
JP6779633B2 (en) | 2020-11-04 |
US20170259394A1 (en) | 2017-09-14 |
TW201729943A (en) | 2017-09-01 |
KR102624343B1 (en) | 2024-01-15 |
TWI773660B (en) | 2022-08-11 |
KR20170099372A (en) | 2017-08-31 |
US10933507B2 (en) | 2021-03-02 |
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