JP2015201644A5 - - Google Patents
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- JP2015201644A5 JP2015201644A5 JP2015076924A JP2015076924A JP2015201644A5 JP 2015201644 A5 JP2015201644 A5 JP 2015201644A5 JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015201644 A5 JP2015201644 A5 JP 2015201644A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- composition according
- acid
- anionic
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/245,286 | 2014-04-04 | ||
| US14/245,286 US9583359B2 (en) | 2014-04-04 | 2014-04-04 | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015201644A JP2015201644A (ja) | 2015-11-12 |
| JP2015201644A5 true JP2015201644A5 (enExample) | 2016-12-08 |
| JP6437870B2 JP6437870B2 (ja) | 2018-12-12 |
Family
ID=53039177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015076924A Active JP6437870B2 (ja) | 2014-04-04 | 2015-04-03 | シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9583359B2 (enExample) |
| EP (1) | EP2927294B1 (enExample) |
| JP (1) | JP6437870B2 (enExample) |
| KR (1) | KR101899948B1 (enExample) |
| TW (1) | TWI611009B (enExample) |
Families Citing this family (28)
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| EP2914675A4 (en) * | 2012-11-02 | 2016-10-05 | L Livermore Nat Security Llc | METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| JP2016207973A (ja) * | 2015-04-28 | 2016-12-08 | 株式会社東芝 | 半導体装置の製造方法 |
| WO2017142885A1 (en) * | 2016-02-16 | 2017-08-24 | Cabot Microelectronics Corporation | Method of polishing group iii-v materials |
| US10703936B2 (en) | 2016-03-30 | 2020-07-07 | Fujimi Incorporated | Polishing composition |
| CN109415597B (zh) * | 2016-06-22 | 2021-08-17 | 嘉柏微电子材料股份公司 | 包含含胺的表面活性剂的抛光组合物 |
| EP3526298B1 (en) | 2016-10-17 | 2024-07-10 | CMC Materials LLC | Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity |
| CN106672892A (zh) * | 2016-12-21 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | 减小三维堆叠中牺牲层在化学机械抛光中凹陷变形的方法 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| EP3631045A4 (en) * | 2017-05-25 | 2021-01-27 | Fujifilm Electronic Materials U.S.A., Inc. | CHEMICAL-MECHANICAL POLISHING SLUDGE FOR COBALT APPLICATIONS |
| US10170335B1 (en) * | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US10377921B2 (en) * | 2017-09-21 | 2019-08-13 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US11186748B2 (en) * | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10584265B2 (en) | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| US10428241B2 (en) * | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| WO2020021680A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
| KR102499989B1 (ko) * | 2018-03-23 | 2023-02-15 | 후지필름 가부시키가이샤 | 연마액 및 화학적 기계적 연마 방법 |
| KR20200100809A (ko) | 2018-03-23 | 2020-08-26 | 후지필름 가부시키가이샤 | 연마액 및 화학적 기계적 연마 방법 |
| KR102759372B1 (ko) | 2019-01-08 | 2025-01-24 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
| CN113710761B (zh) * | 2019-04-17 | 2024-04-09 | Cmc材料有限责任公司 | 用于钨擦光应用的经表面涂覆的研磨剂颗粒 |
| TWI853105B (zh) * | 2019-12-03 | 2024-08-21 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及化學機械研磨方法 |
| JP7409918B2 (ja) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| KR102710233B1 (ko) | 2020-08-13 | 2024-09-27 | 창신 메모리 테크놀로지즈 아이엔씨 | 비트 라인 구조 제조 방법, 반도체 구조 제조 방법 및 반도체 구조 |
| TWI877406B (zh) * | 2020-09-25 | 2025-03-21 | 日商福吉米股份有限公司 | 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法 |
| US20220243094A1 (en) * | 2021-02-04 | 2022-08-04 | Cmc Materials, Inc. | Silicon carbonitride polishing composition and method |
| KR20230112263A (ko) * | 2022-01-20 | 2023-07-27 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자 제조방법 |
| KR20230144386A (ko) | 2022-04-07 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| CN115926629B (zh) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | 具有改进再循环性能的化学机械抛光组合物 |
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| JPH11176773A (ja) | 1997-12-12 | 1999-07-02 | Toshiba Corp | 研磨方法 |
| ATE266071T1 (de) | 1998-02-24 | 2004-05-15 | Showa Denko Kk | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
| JP3957924B2 (ja) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | Cmp研磨方法 |
| US6783432B2 (en) * | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
| US6811470B2 (en) * | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
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| US7390748B2 (en) * | 2004-08-05 | 2008-06-24 | International Business Machines Corporation | Method of forming a polishing inhibiting layer using a slurry having an additive |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| JP4954462B2 (ja) | 2004-10-19 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法 |
| US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| WO2006133249A2 (en) * | 2005-06-06 | 2006-12-14 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| US20070048991A1 (en) | 2005-08-23 | 2007-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnect structures and fabrication method thereof |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| US7653117B2 (en) | 2006-03-16 | 2010-01-26 | Harris Corporation | Method for decoding digital data in a frequency hopping communication system |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Cmp 슬러리용 보조제 |
| US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
| US8759216B2 (en) | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR101396853B1 (ko) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | 실리콘 질화물 연마용 슬러리 조성물, 이를 이용한 실리콘질화막의 연마 방법 및 반도체 장치의 제조 방법 |
| CN101802125B (zh) | 2007-09-21 | 2013-11-06 | 卡伯特微电子公司 | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
| US20090130849A1 (en) * | 2007-10-29 | 2009-05-21 | Wai Mun Lee | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| DE102007062572A1 (de) | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
| JP5632378B2 (ja) * | 2008-09-26 | 2014-11-26 | ロディア オペレーションズRhodia Operations | 化学機械研磨用研磨剤組成物及びその使用法 |
| JP5371416B2 (ja) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| EP2533274B1 (en) | 2010-02-01 | 2014-07-30 | JSR Corporation | Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same |
| JP5554121B2 (ja) * | 2010-03-31 | 2014-07-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5601922B2 (ja) * | 2010-07-29 | 2014-10-08 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US20120161320A1 (en) | 2010-12-23 | 2012-06-28 | Akolkar Rohan N | Cobalt metal barrier layers |
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
-
2014
- 2014-04-04 US US14/245,286 patent/US9583359B2/en active Active
-
2015
- 2015-03-11 EP EP15158633.6A patent/EP2927294B1/en active Active
- 2015-03-13 TW TW104108090A patent/TWI611009B/zh active
- 2015-03-31 KR KR1020150044959A patent/KR101899948B1/ko active Active
- 2015-04-03 JP JP2015076924A patent/JP6437870B2/ja active Active
- 2015-09-17 US US14/857,310 patent/US9558959B2/en active Active
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