JP2015201644A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015201644A5 JP2015201644A5 JP2015076924A JP2015076924A JP2015201644A5 JP 2015201644 A5 JP2015201644 A5 JP 2015201644A5 JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015201644 A5 JP2015201644 A5 JP 2015201644A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- composition according
- acid
- anionic
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/245,286 | 2014-04-04 | ||
| US14/245,286 US9583359B2 (en) | 2014-04-04 | 2014-04-04 | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015201644A JP2015201644A (ja) | 2015-11-12 |
| JP2015201644A5 true JP2015201644A5 (enExample) | 2016-12-08 |
| JP6437870B2 JP6437870B2 (ja) | 2018-12-12 |
Family
ID=53039177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015076924A Active JP6437870B2 (ja) | 2014-04-04 | 2015-04-03 | シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9583359B2 (enExample) |
| EP (1) | EP2927294B1 (enExample) |
| JP (1) | JP6437870B2 (enExample) |
| KR (1) | KR101899948B1 (enExample) |
| TW (1) | TWI611009B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6321022B2 (ja) * | 2012-11-02 | 2018-05-09 | ローレンス リバモア ナショナル セキュリティー， エルエルシー | 表面活性を失うことなく荷電コロイドの凝集を阻止する方法 |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| JP2016207973A (ja) * | 2015-04-28 | 2016-12-08 | 株式会社東芝 | 半導体装置の製造方法 |
| TWI650392B (zh) * | 2016-02-16 | 2019-02-11 | 美商卡博特微電子公司 | Iii至v族材料拋光之方法 |
| WO2017169808A1 (ja) * | 2016-03-30 | 2017-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2017223225A1 (en) * | 2016-06-22 | 2017-12-28 | Cabot Microelectronics Corporation | Polishing composition comprising an amine-containing surfactant |
| JP7041135B2 (ja) | 2016-10-17 | 2022-03-23 | シーエムシー マテリアルズ，インコーポレイティド | 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のｃｍｐ組成物 |
| CN106672892A (zh) * | 2016-12-21 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | 减小三维堆叠中牺牲层在化学机械抛光中凹陷变形的方法 |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| WO2018217628A1 (en) * | 2017-05-25 | 2018-11-29 | Fujifilm Planar Solutions, LLC | Chemical mechanical polishing slurry for cobalt applications |
| US10170335B1 (en) * | 2017-09-21 | 2019-01-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US10377921B2 (en) * | 2017-09-21 | 2019-08-13 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Chemical mechanical polishing method for cobalt |
| US10584265B2 (en) * | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| US11186748B2 (en) | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| WO2020021680A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
| KR102499989B1 (ko) * | 2018-03-23 | 2023-02-15 | 후지필름 가부시키가이샤 | 연마액 및 화학적 기계적 연마 방법 |
| JPWO2019181399A1 (ja) * | 2018-03-23 | 2021-02-04 | 富士フイルム株式会社 | 研磨液および化学的機械的研磨方法 |
| KR102759372B1 (ko) | 2019-01-08 | 2025-01-24 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
| KR20210142756A (ko) | 2019-04-17 | 2021-11-25 | 씨엠씨 머티리얼즈, 인코포레이티드 | 텅스텐 버프 적용을 위한 표면 코팅된 연마제 입자 |
| TWI853105B (zh) * | 2019-12-03 | 2024-08-21 | 日商Ｊｓｒ股份有限公司 | 化學機械研磨用組成物及化學機械研磨方法 |
| JP7409918B2 (ja) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| JP7675727B2 (ja) | 2020-08-13 | 2025-05-13 | チャンシン メモリー テクノロジーズ インコーポレイテッド | ビット線構造の製造方法、半導体構造の製造方法及び半導体構造 |
| TWI877406B (zh) | 2020-09-25 | 2025-03-21 | 日商福吉米股份有限公司 | 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法 |
| JP2024508243A (ja) * | 2021-02-04 | 2024-02-26 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | 炭窒化ケイ素研磨組成物及び方法 |
| KR20230112263A (ko) * | 2022-01-20 | 2023-07-27 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자 제조방법 |
| KR20230144386A (ko) | 2022-04-07 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| CN115926629B (zh) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | 具有改进再循环性能的化学机械抛光组合物 |
| WO2025254960A1 (en) * | 2024-06-05 | 2025-12-11 | Entegris, Inc. | Silica-based slurry for selective polishing of silicon nitride and silicon carbide |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11176773A (ja) | 1997-12-12 | 1999-07-02 | Toshiba Corp | 研磨方法 |
| JP3672493B2 (ja) | 1998-02-24 | 2005-07-20 | 昭和電工株式会社 | 半導体装置研磨用研磨材組成物及びそれを用いた半導体装置の製造方法 |
| JP3957924B2 (ja) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | Ｃｍｐ研磨方法 |
| US6783432B2 (en) * | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
| US6811470B2 (en) * | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7063597B2 (en) * | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7390748B2 (en) * | 2004-08-05 | 2008-06-24 | International Business Machines Corporation | Method of forming a polishing inhibiting layer using a slurry having an additive |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| JP4954462B2 (ja) | 2004-10-19 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法 |
| US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| WO2006133249A2 (en) * | 2005-06-06 | 2006-12-14 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| US20070048991A1 (en) | 2005-08-23 | 2007-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Copper interconnect structures and fabrication method thereof |
| US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
| US7653117B2 (en) | 2006-03-16 | 2010-01-26 | Harris Corporation | Method for decoding digital data in a frequency hopping communication system |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
| US8759216B2 (en) | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR101396853B1 (ko) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | 실리콘 질화물 연마용 슬러리 조성물, 이를 이용한 실리콘질화막의 연마 방법 및 반도체 장치의 제조 방법 |
| WO2009042072A2 (en) | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| WO2009058274A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc. | Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use |
| DE102007062572A1 (de) | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
| US8425797B2 (en) * | 2008-03-21 | 2013-04-23 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
| JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
| CN102165564B (zh) * | 2008-09-26 | 2014-10-01 | 罗地亚管理公司 | 用于化学机械抛光的磨料组合物及其使用方法 |
| JP5371416B2 (ja) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| KR20120134105A (ko) * | 2010-02-01 | 2012-12-11 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 이를 이용한 화학 기계 연마 방법 |
| JP5554121B2 (ja) * | 2010-03-31 | 2014-07-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5601922B2 (ja) * | 2010-07-29 | 2014-10-08 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US20120161320A1 (en) | 2010-12-23 | 2012-06-28 | Akolkar Rohan N | Cobalt metal barrier layers |
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| JP5957292B2 (ja) * | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
-
2014
- 2014-04-04 US US14/245,286 patent/US9583359B2/en active Active
-
2015
- 2015-03-11 EP EP15158633.6A patent/EP2927294B1/en active Active
- 2015-03-13 TW TW104108090A patent/TWI611009B/zh active
- 2015-03-31 KR KR1020150044959A patent/KR101899948B1/ko active Active
- 2015-04-03 JP JP2015076924A patent/JP6437870B2/ja active Active
- 2015-09-17 US US14/857,310 patent/US9558959B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015201644A5 (enExample) | ||
| JP6437870B2 (ja) | シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 | |
| JP6530401B2 (ja) | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 | |
| KR101571224B1 (ko) | 연마용 조성물 및 그것을 이용한 연마 방법 | |
| JP2012511251A5 (enExample) | ||
| JP5927806B2 (ja) | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 | |
| TW201139634A (en) | Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same | |
| JP2011513984A (ja) | Ｃｍｐスラリー及びこれを利用した研磨方法 | |
| JP2004266155A (ja) | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 | |
| US9725621B2 (en) | Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, CMP polishing pad and process for preparing said composition | |
| JP6050839B2 (ja) | 表面選択性研磨組成物 | |
| JP2018049992A (ja) | 表面処理組成物、ならびにこれを用いた表面処理方法および半導体基板の製造方法 | |
| JP7330668B2 (ja) | 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法 | |
| JP2013021291A (ja) | 研磨用組成物 | |
| JP2025109973A (ja) | Ｃｍｐスラリー | |
| JP6282708B2 (ja) | 研磨用組成物、それを用いた研磨方法、及びその製造方法 | |
| JP2017117917A (ja) | 研磨用組成物及びシリコン基板の研磨方法 | |
| JP2012039087A5 (enExample) | ||
| JP7557532B2 (ja) | 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物 | |
| JP2023104945A (ja) | シャロートレンチアイソレーション（ｓｔｉ）の化学機械平坦化研磨（ｃｍｐ）において酸化物／窒化物選択性を高め、酸化物トレンチのディッシングを低く均一化する方法 | |
| JP2020068378A5 (enExample) | ||
| JP2011205097A5 (enExample) | ||
| JPWO2008117593A1 (ja) | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 | |
| JP2015071660A (ja) | 研磨用組成物 | |
| JPWO2023080014A5 (enExample) |