TWI611009B - 用於相對氧化矽薄膜選擇性拋光氮化矽薄膜的拋光組成物及方法 - Google Patents

用於相對氧化矽薄膜選擇性拋光氮化矽薄膜的拋光組成物及方法 Download PDF

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Publication number
TWI611009B
TWI611009B TW104108090A TW104108090A TWI611009B TW I611009 B TWI611009 B TW I611009B TW 104108090 A TW104108090 A TW 104108090A TW 104108090 A TW104108090 A TW 104108090A TW I611009 B TWI611009 B TW I611009B
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acid
anionic
composition
polishing composition
group
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TW104108090A
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Chinese (zh)
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TW201542785A (zh
Inventor
阿布達雅 米斯拉
璐玲 汪
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富士軟片平面解決方案有限責任公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW104108090A 2014-04-04 2015-03-13 用於相對氧化矽薄膜選擇性拋光氮化矽薄膜的拋光組成物及方法 TWI611009B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/245,286 US9583359B2 (en) 2014-04-04 2014-04-04 Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
US14/245,286 2014-04-04

Publications (2)

Publication Number Publication Date
TW201542785A TW201542785A (zh) 2015-11-16
TWI611009B true TWI611009B (zh) 2018-01-11

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Family Applications (1)

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TW104108090A TWI611009B (zh) 2014-04-04 2015-03-13 用於相對氧化矽薄膜選擇性拋光氮化矽薄膜的拋光組成物及方法

Country Status (5)

Country Link
US (2) US9583359B2 (enExample)
EP (1) EP2927294B1 (enExample)
JP (1) JP6437870B2 (enExample)
KR (1) KR101899948B1 (enExample)
TW (1) TWI611009B (enExample)

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Also Published As

Publication number Publication date
US20160079080A1 (en) 2016-03-17
KR101899948B1 (ko) 2018-09-19
EP2927294A1 (en) 2015-10-07
US9558959B2 (en) 2017-01-31
US20150284593A1 (en) 2015-10-08
US9583359B2 (en) 2017-02-28
JP2015201644A (ja) 2015-11-12
JP6437870B2 (ja) 2018-12-12
EP2927294B1 (en) 2017-08-02
TW201542785A (zh) 2015-11-16
KR20150115645A (ko) 2015-10-14

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