JP5695367B2 - 研磨用組成物及びそれを用いた研磨方法 - Google Patents
研磨用組成物及びそれを用いた研磨方法 Download PDFInfo
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- JP5695367B2 JP5695367B2 JP2010186427A JP2010186427A JP5695367B2 JP 5695367 B2 JP5695367 B2 JP 5695367B2 JP 2010186427 A JP2010186427 A JP 2010186427A JP 2010186427 A JP2010186427 A JP 2010186427A JP 5695367 B2 JP5695367 B2 JP 5695367B2
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- JP
- Japan
- Prior art keywords
- polishing
- acid
- polishing composition
- colloidal silica
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 179
- 239000000203 mixture Substances 0.000 title claims description 109
- 238000000034 method Methods 0.000 title claims description 8
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- 239000008119 colloidal silica Substances 0.000 claims description 72
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 45
- 150000007524 organic acids Chemical class 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000003002 pH adjusting agent Substances 0.000 claims description 9
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 7
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- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 7
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
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- 229910017604 nitric acid Inorganic materials 0.000 description 2
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- AFINAILKDBCXMX-PBHICJAKSA-N (2s,3r)-2-amino-3-hydroxy-n-(4-octylphenyl)butanamide Chemical compound CCCCCCCCC1=CC=C(NC(=O)[C@@H](N)[C@@H](C)O)C=C1 AFINAILKDBCXMX-PBHICJAKSA-N 0.000 description 1
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- IWTIBPIVCKUAHK-UHFFFAOYSA-N 3-[bis(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCC(O)=O IWTIBPIVCKUAHK-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- GUUULVAMQJLDSY-UHFFFAOYSA-N 4,5-dihydro-1,2-thiazole Chemical compound C1CC=NS1 GUUULVAMQJLDSY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本実施形態の研磨用組成物は、有機酸を固定化したコロイダルシリカを水に混合して調製される。従って、研磨用組成物は、有機酸を固定化したコロイダルシリカを含有する。この研磨用組成物は、窒化ケイ素を研磨する用途、より具体的には、半導体配線基板のような研磨対象物における窒化ケイ素を含んだ表面を研磨する用途で主に使用される。
研磨用組成物中のコロイダルシリカの平均会合度は1.2以上であることが好ましく、より好ましくは1.5以上である。コロイダルシリカの平均会合度が大きくなるにつれて、研磨用組成物による窒化ケイ素の研磨速度が向上する有利がある。
・ 本実施形態の研磨用組成物は、スルホン酸やカルボン酸等の有機酸を固定化したコロイダルシリカを含有し、pHが6以下である。pH6以下のもとでは、有機酸を固定化したコロイダルシリカのゼータ電位はマイナスである。その一方、同じpH6以下のもとで窒化ケイ素のゼータ電位はプラスである。そのため、研磨用組成物のpHが6以下であれば、研磨用組成物中のコロイダルシリカが窒化ケイ素に対して電気的に反発することがない。よって、この研磨用組成物によれば、窒化ケイ素を高速度で研磨することができる。
・ 研磨用組成物中のコロイダルシリカの平均会合度が4.0以下である場合、さらに言えば3.0以下又は2.5以下である場合には、研磨用組成物を用いて研磨した後の研磨対象物の表面に欠陥が生じたり表面粗さが増大したりするのを良好に抑えることができる。
・ 前記実施形態の研磨用組成物は、有機酸を固定化したコロイダルシリカに加えて別の砥粒をさらに含有してもよい。
・ 前記実施形態の研磨用組成物は、防腐剤や防カビ剤のような公知の添加剤を必要に応じてさらに含有してもよい。防腐剤及び防カビ剤の具体例としては、例えば、2−メチル−4−イソチアゾリン−3−オンや5−クロロ−2−メチル−4−イソチアゾリン−3−オン等のイソチアゾリン系防腐剤、パラオキシ安息香酸エステル類及びフェノキシエタノールが挙げられる。
・ 前記実施形態の研磨用組成物は、研磨用組成物の原液を水などの希釈液を使って例えば10倍以上に希釈することによって調製されてもよい。
次に、本発明の実施例及び比較例を説明する。
Claims (7)
- 窒化ケイ素を研磨する用途で使用される研磨用組成物であって、有機酸を固定化したコロイダルシリカを含有し、
前記有機酸を固定化したコロイダルシリカは、チオール基を有するシランカップリング剤をコロイダルシリカにカップリングさせた後にチオール基を酸化することにより得られる、スルホン酸を固定化したコロイダルシリカであり、pHが6以下である研磨用組成物。 - 多結晶シリコンの研磨速度に対する窒化ケイ素の研磨速度の比が2以上である、請求項1に記載の研磨用組成物。
- 前記研磨用組成物のpHが4以下である、請求項1又は2に記載の研磨用組成物。
- 前記コロイダルシリカが非球形である、請求項1から3のいずれか一項に記載の研磨用組成物。
- 前記コロイダルシリカの平均会合度が1.2以上且つ4.0以下である、請求項1から4のいずれか一項に記載の研磨用組成物。
- 前記研磨用組成物は、pH調整剤として、ジカルボン酸及びトリカルボン酸から選ばれる少なくとも一種を含有する、請求項1から5のいずれか一項に記載の研磨用組成物。
- 請求項1から6のいずれか一項に記載の研磨用組成物を用いて、窒化ケイ素を研磨する研磨方法。
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US13/818,058 US20130146804A1 (en) | 2010-08-23 | 2011-08-10 | Polishing composition and polishing method using same |
KR1020187008000A KR101908265B1 (ko) | 2010-08-23 | 2011-08-10 | 연마용 조성물 및 그것을 이용한 연마 방법 |
KR1020137006921A KR101571224B1 (ko) | 2010-08-23 | 2011-08-10 | 연마용 조성물 및 그것을 이용한 연마 방법 |
EP18179047.8A EP3398716A1 (en) | 2010-08-23 | 2011-08-10 | Polishing composition |
CN201180040355.8A CN103180101B (zh) | 2010-08-23 | 2011-08-10 | 研磨用组合物及使用其的研磨方法 |
PCT/JP2011/068217 WO2012026329A1 (ja) | 2010-08-23 | 2011-08-10 | 研磨用組成物及びそれを用いた研磨方法 |
EP15003612.7A EP3059050B1 (en) | 2010-08-23 | 2011-08-10 | Method for preparing a polishing composition |
EP11819793.8A EP2610031B1 (en) | 2010-08-23 | 2011-08-10 | Method for polishing silicon nitride and polycrystalline silicon |
KR1020157008625A KR101843237B1 (ko) | 2010-08-23 | 2011-08-10 | 연마용 조성물 및 그것을 이용한 연마 방법 |
TW100129174A TWI485236B (zh) | 2010-08-23 | 2011-08-16 | 研磨用組成物及使用該研磨用組成物之研磨方法 |
TW104112342A TWI573865B (zh) | 2010-08-23 | 2011-08-16 | 研磨用組成物及使用該研磨用組成物之研磨方法 |
TW105143846A TWI620813B (zh) | 2010-08-23 | 2011-08-16 | 研磨用組成物及使用該研磨用組成物之研磨方法 |
US15/967,011 US10508222B2 (en) | 2010-08-23 | 2018-04-30 | Polishing composition and polishing method using same |
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US10508222B2 (en) | 2019-12-17 |
WO2012026329A1 (ja) | 2012-03-01 |
EP2610031B1 (en) | 2016-03-23 |
TWI573865B (zh) | 2017-03-11 |
JP2012040671A (ja) | 2012-03-01 |
US20180244957A1 (en) | 2018-08-30 |
TW201529821A (zh) | 2015-08-01 |
EP3059050B1 (en) | 2018-10-10 |
EP3059050A1 (en) | 2016-08-24 |
TW201217504A (en) | 2012-05-01 |
KR101843237B1 (ko) | 2018-03-28 |
EP2610031A4 (en) | 2014-01-22 |
KR20180032681A (ko) | 2018-03-30 |
US20130146804A1 (en) | 2013-06-13 |
KR20130101022A (ko) | 2013-09-12 |
KR101571224B1 (ko) | 2015-11-23 |
TWI485236B (zh) | 2015-05-21 |
KR101908265B1 (ko) | 2018-10-15 |
TWI620813B (zh) | 2018-04-11 |
CN103180101B (zh) | 2016-08-03 |
TW201713745A (zh) | 2017-04-16 |
CN103180101A (zh) | 2013-06-26 |
EP3398716A1 (en) | 2018-11-07 |
KR20150043543A (ko) | 2015-04-22 |
EP2610031A1 (en) | 2013-07-03 |
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