CN103180101B - 研磨用组合物及使用其的研磨方法 - Google Patents
研磨用组合物及使用其的研磨方法 Download PDFInfo
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- CN103180101B CN103180101B CN201180040355.8A CN201180040355A CN103180101B CN 103180101 B CN103180101 B CN 103180101B CN 201180040355 A CN201180040355 A CN 201180040355A CN 103180101 B CN103180101 B CN 103180101B
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- Prior art keywords
- polishing
- composition
- acid
- silica sol
- silicon nitride
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
本发明的研磨用组合物,其特征在于,其为在研磨氮化硅的用途中使用的研磨用组合物,其含有固定化有磺酸、羧酸这样的有机酸的胶体二氧化硅,研磨用组合物的pH为6以下。
Description
技术领域
本发明涉及例如半导体器件制造工艺中使用的研磨用组合物及使用该组合物的研磨方法。
背景技术
在半导体器件制造工艺中,存在高速地研磨缺少化学反应性的氮化硅这样的要求。为了研磨氮化硅一直以来所使用的大多数研磨用组合物含有磨粒和酸。例如,专利文献1中公开有,含有磷酸或磷酸衍生物的研磨用组合物;专利文献2中公开有,含有胶体二氧化硅和具有磺酸基或膦酸基的有机酸的、pH为2.5~5的研磨用组合物。然而,这些以往的研磨用组合物并不能充分满足用户对氮化硅的研磨速度的要求。
现有技术文献
专利文献
专利文献1:日本特开平06-124932号公报
专利文献2:日本特开2010-41037号公报
发明内容
发明要解决的问题
因此,本发明的目的在于提供能够更高速地研磨氮化硅的研磨用组合物及使用该组合物的研磨方法。
用于解决问题的方案
为了达成上述目的,本发明的一个方案是提供一种研磨用组合物,其为在研磨氮化硅的用途中使用的研磨用组合物,其含有固定化有有机酸的胶体二氧化硅,研磨用组合物的pH为6以下。
另外,本发明的另一方案是提供一种研磨方法,其使用前述的研磨用组合物,研磨氮化硅。
发明的效果
根据本发明,可提供能够高速地研磨氮化硅的研磨用组合物及使用该组合物的研磨方法。
具体实施方式
以下,说明本发明的一个实施方式。
本实施方式的研磨用组合物是将固定化有有机酸的胶体二氧化硅与水进行混合而制备的。因而,研磨用组合物含有固定化有有机酸的胶体二氧化硅。该研磨用组合物主要用于研磨氮化硅的用途,更具体而言,主要用于对在半导体布线基板这样的研磨对象物中含有氮化硅的表面进行研磨的用途。
在研磨用组合物中所含的胶体二氧化硅的表面上的有机酸的固定化是通过使有机酸的官能团与胶体二氧化硅的表面化学键合而进行的。仅使胶体二氧化硅与有机酸共存不能达到向胶体二氧化硅固定化有机酸的效果。如果使作为一种有机酸的磺酸固定化到胶体二氧化硅,例如可利用“Sulfonicacid-functionalizedsilicathroughquantitativeoxidationofthiolgroups”,Chem.Commun.246-247(2003)所记载的方法来进行。具体而言,使3-巯丙基三甲氧基硅烷等具有巯基的硅烷偶联剂与胶体二氧化硅偶联后用过氧化氢将巯基进行氧化,由此可得到磺酸在表面被固定化了的胶体二氧化硅。或者,如果使羧酸固定化到胶体二氧化硅,例如可利用“NovelSilaneCouplingAgentsContainingaPhotolabile2-NitrobenzylEsterforIntroductionofaCarboxyGroupontheSurfaceofSilicaGel”,ChemistryLetters,3,228-229(2000)所记载的方法来进行。具体而言,使含有光反应性2-硝基苄酯的硅烷偶联剂与胶体二氧化硅偶联后进行光照射,由此可得到羧酸在表面被固定化了的胶体二氧化硅。
研磨用组合物中的胶体二氧化硅的平均一次粒径优选为5nm以上,更优选为7nm以上,进一步优选为10nm以上。随着胶体二氧化硅的平均一次粒径增大,有利于提高研磨用组合物对氮化硅的研磨速度。
另外,研磨用组合物中的胶体二氧化硅的平均一次粒径优选为100nm以下,更优选为90nm以下,进一步优选为80nm以下。随着胶体二氧化硅的平均一次粒径变小,有利于抑制使用研磨用组合物研磨后研磨对象物的表面产生划痕。需要说明的是,胶体二氧化硅的平均一次粒径的值基于例如BET法测定的胶体二氧化硅的比表面积而计算。
研磨用组合物中的胶体二氧化硅的平均二次粒径优选为10nm以上,更优选为20nm以上,进一步优选为30nm以上。随着胶体二氧化硅的平均二次粒径增大,有利于提高研磨用组合物对氮化硅的研磨速度。
另外,研磨用组合物中的胶体二氧化硅的平均二次粒径优选为150nm以下,更优选为120nm以下,进一步优选为100nm以下。随着胶体二氧化硅的平均二次粒径变小,有利于抑制使用研磨用组合物研磨后研磨对象物的表面产生划痕。需要说明的是,胶体二氧化硅的平均二次粒径的值可利用例如使用了激光的光散射法来测定。
研磨用组合物中的胶体二氧化硅的形状优选为非球形。非球形状的胶体二氧化硅可以为两个以上初级颗粒缔合而成的缔合物。
研磨用组合物中的胶体二氧化硅的平均缔合度优选为1.2以上,更优选为1.5以上。随着胶体二氧化硅的平均缔合度增大,有利于提高研磨用组合物对氮化硅的研磨速度。
另外,研磨用组合物中的胶体二氧化硅的平均缔合度优选为4.0以下,更优选为3.0以下,进一步优选为2.5以下。随着胶体二氧化硅的平均缔合度变小,有利于抑制使用研磨用组合物研磨后的研磨对象物的表面产生缺陷、或表面粗糙度增大。
研磨用组合物中的胶体二氧化硅的含量优选为0.05质量%以上,更优选为0.1质量%以上,进一步优选为1质量%以上。随着胶体二氧化硅的含量增多,有利于提高研磨用组合物对氮化硅的研磨速度。
另外,研磨用组合物中的胶体二氧化硅的含量优选为20质量%以下,更优选为15质量%以下,进一步优选为10质量%以下。随着胶体二氧化硅的含量变少,不但可抑制研磨用组合物的材料成本,并且还有利于能够抑制发生胶体二氧化硅的聚集。
研磨用组合物的pH的值需要为6以下。在pH超过6时,难以使用研磨用组合物高速地研磨氮化硅。从进一步提高研磨用组合物对氮化硅的研磨速度的观点来看,研磨用组合物的pH的值优选为5以下,更优选为4.5以下,进一步优选为4以下。
另外,研磨用组合物的pH的值优选为1以上,更优选为1.5以上,进一步优选为2以上,特别优选为2.5以上。随着研磨用组合物的pH变高,有利于研磨用组合物的氮化硅的研磨速度相对于多晶硅的研磨速度的比增高,即有利于相对于多晶硅可更优先地研磨氮化硅。
为了将研磨用组合物的pH调整到所期望的值,也可以使用pH调整剂。所使用的pH调整剂可以是无机酸或有机酸,或者可以是螯合剂。
作为可用作pH调整剂的无机酸的具体例,例如可列举出:盐酸、硫酸、硝酸、氢氟酸、硼酸、碳酸、次磷酸、亚磷酸和磷酸。其中优选盐酸、硫酸、硝酸和磷酸。
作为可用作pH调整剂的有机酸的具体例,例如可列举出:甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、正己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、正庚酸、2-甲基己酸、正辛酸、2-乙基己酸、安息香酸、乙醇酸、水杨酸、甘油酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、马来酸、苯二甲酸、苹果酸、酒石酸、柠檬酸、乳酸、二乙醇酸、2-呋喃羧酸、2,5-呋喃二羧酸、3-呋喃羧酸、2-四氢呋喃羧酸、甲氧基乙酸、甲氧基苯基乙酸和苯氧基乙酸。也可使用甲磺酸、乙磺酸和羟乙磺酸等有机硫酸。其中优选丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、马来酸、苯二甲酸、苹果酸和酒石酸这样的二羧酸、以及柠檬酸这样的三羧酸。
代替无机酸或有机酸、或者与无机酸或有机酸组合,也可使用无机酸或有机酸的铵盐、碱金属盐等盐作为pH调整剂。在弱酸和强碱、强酸和弱碱、或弱酸和弱碱的组合时,可期待pH的缓冲作用。
作为可用作pH调整剂的螯合剂的具体例,例如可列举出:羟乙基亚氨基二乙酸、亚氨基二乙酸、乙酰氨基亚氨基二乙酸、次氮基三丙酸、次氮基三甲基膦酸、次氮基三乙酸、二乙三胺五乙酸和乙二胺四乙酸。
研磨用组合物也可以能够高速地研磨氮化硅,另一方面不会高速地研磨多晶硅。在研磨不只包含氮化硅而且包含多晶硅的研磨对象物的表面的用途中使用研磨用组合物时,有时要求前述那样的性能。在该情况下,氮化硅的研磨速度相对于多晶硅的研磨速度的比优选为2以上,更优选为4以上,进一步优选为6以上,特别优选为8以上。
根据本实施方式可得到以下优点。
·本实施方式的研磨用组合物含有固定化有磺酸、羧酸等有机酸的胶体二氧化硅,研磨用组合物的pH为6以下。在pH6以下的条件下,固定化有有机酸的胶体二氧化硅的ζ电位为负。另一方面,在相同的pH6以下的条件下,氮化硅的ζ电位为正。因此,只要研磨用组合物的pH为6以下,研磨用组合物中的胶体二氧化硅相对于氮化硅不会有电排斥。因而,根据该研磨用组合物,能够高速地研磨氮化硅。
·研磨用组合物中的胶体二氧化硅的平均一次粒径为5nm以上时,进一步而言为7nm以上或10nm以上时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物中的胶体二氧化硅的平均一次粒径为100nm以下时,进一步而言为90nm以下或80nm以下时,能够良好地抑制在使用研磨用组合物研磨后研磨对象物的表面产生划痕。
·研磨用组合物中的胶体二氧化硅的平均二次粒径为10nm以上时,进一步而言为20nm以上或30nm以上时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物中的胶体二氧化硅的平均二次粒径为150nm以下时,进一步而言为120nm以下或100nm以下时,能够良好地抑制在使用研磨用组合物研磨后研磨对象物的表面产生划痕。
·研磨用组合物中的胶体二氧化硅的平均缔合度为1.2以上时,进一步而言为1.5以上时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物中的胶体二氧化硅的形状为非球形时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物中的胶体二氧化硅的平均缔合度为4.0以下时,进一步而言为3.0以下或2.5以下时,能够良好地抑制在使用研磨用组合物研磨后研磨对象物的表面产生缺陷、或表面粗糙度增大。
·研磨用组合物中的胶体二氧化硅的含量为0.05质量%以上时,进一步而言为0.1质量%以上或1质量%以上时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物中的胶体二氧化硅的含量为20质量%以下时,进一步而言为15质量%以下或10质量%以下时,不但能够抑制研磨用组合物的材料成本,而且能够抑制发生胶体二氧化硅的聚集。
·研磨用组合物的pH的值为5以下时,进一步而言为4.5以下或4以下时,能够进一步提高研磨用组合物对氮化硅的研磨速度。
·研磨用组合物的pH的值为1以上时,进一步而言为1.5以上、2以上或2.5以上时,能够提高研磨用组合物对氮化硅的研磨速度相对于多晶硅的研磨速度的比。
·研磨用组合物的氮化硅的研磨速度相对于多晶硅的研磨速度的比为2以上时,进一步而言为4以上、6以上或8以上时,在研磨包含氮化硅和多晶硅的研磨对象物的表面的用途中使用研磨用组合物时,相对于多晶硅可更优先地研磨氮化硅。
前述实施方式也可如下进行变更。
·前述实施方式的研磨用组合物除了含有固定化有有机酸的胶体二氧化硅之外还可含有别的磨粒。
·前述实施方式的研磨用组合物还可含有水溶性高分子。水溶性高分子吸附于胶体二氧化硅的表面或研磨对象物的表面,能够控制研磨用组合物对研磨对象物的研磨速度,并且也起到使研磨中产生的不溶性成分在研磨用组合物中稳定化的作用。作为可使用的水溶性高分子的例子,例举具有聚氧化亚烷基链的化合物,更具体而言,可列举出聚乙二醇、聚丙二醇、聚氧亚乙基烷基醚、聚氧亚乙基月桂基醚硫酸盐、聚氧亚乙基月桂基醚醋酸盐、聚氧亚乙基烷基磷酸、和具有聚氧化亚烷基链的硅油。其中优选聚乙二醇和聚丙二醇。
·在前述实施方式的研磨用组合物含有水溶性高分子的情况下,研磨用组合物中的水溶性高分子的含量优选为0.001g/L以上,更优选为0.005g/L以上,进一步优选为0.01g/L以上。随着水溶性高分子的含量增多,研磨用组合物对氮化硅的研磨速度相对于多晶硅的研磨速度的比增高,即有利于相对于多晶硅可更优先地研磨氮化硅。
·在前述实施方式的研磨用组合物含有水溶性高分子的情况下,研磨用组合物中的水溶性高分子的含量优选为10g/L以下,更优选为5g/L以下,进一步优选为1g/L以下。随着水溶性高分子的含量变少,有利于提高研磨用组合物对多晶硅的研磨速度。
·前述实施方式的研磨用组合物也可进一步含有过氧化氢等氧化剂。
·前述实施方式的研磨用组合物也可根据需要进一步含有防腐剂、防霉剂这样公知的添加剂。作为防腐剂和防霉剂的具体例,例如可列举出2-甲基-4-异噻唑啉-3-酮、5-氯-2-甲基-4-异噻唑啉-3-酮等异噻唑啉系防腐剂,对-羟基苯甲酸酯类和苯氧乙醇。
·前述实施方式的研磨用组合物可以为单剂型,也可以为以双剂型为首的多剂型的组合物。
·前述实施方式的研磨用组合物可通过使用水等稀释液将研磨用组合物的原液稀释为例如10倍以上而制备。
·前述实施方式的研磨用组合物也可在除了研磨氮化硅以外的用途中使用。
接着,说明本发明的实施例和比较例。
实施例1~14和比较例1~4中,通过将胶体二氧化硅与水进行混合,适当加入pH调整剂,从而制备了研磨用组合物。比较例5中,将使用pH调整剂调整pH为2的水作为研磨用组合物而制备。各例的研磨用组合物中的胶体二氧化硅和pH调整剂的具体内容以及各研磨用组合物的pH的测定结果示出在表1中。
需要说明的是,表1的“胶体二氧化硅”栏中,“A”表示固定化有磺酸的胶体二氧化硅,“B”表示未使有机酸固定化的通常的胶体二氧化硅。任何一例中使用的胶体二氧化硅的平均缔合度均为2。
使用各例的研磨用组合物,在表2所述的研磨条件下,将直径200mm的氮化硅膜空白晶圆和多晶硅膜空白晶圆的表面研磨60秒,将此时的研磨速度示出在表1的“研磨速度”栏中。研磨速度的值是使用DainipponScreenMfg.Co.,Ltd.的光干涉式膜厚测定装置“LambdaAceVM-2030”测定的研磨前后晶圆的厚度差除以研磨时间来求得的。另外,将这样求得的各例的研磨用组合物对氮化硅的研磨速度除以相同的研磨用组合物对多晶硅的研磨速度而得到的值示出在表1的“氮化硅的研磨速度/多晶硅的研磨速度”栏中。
[表1]
[表2]
如表1所示,在使用了实施例1~14的研磨用组合物的情况下,均能够以超过30nm/分钟的研磨速度来研磨氮化硅。与此相对,在未含有固定化有有机酸的胶体二氧化硅的比较例1~3的研磨用组合物的情况下、以及虽然含有固定化有磺酸的胶体二氧化硅但pH超过6的比较例4的研磨用组合物的情况下,关于氮化硅的研磨速度,所得到的值低。另外,在未含有胶体二氧化硅的比较例5的研磨用组合物的情况下,完全不能够研磨氮化硅。
Claims (8)
1.一种研磨用组合物在研磨氮化硅中的用途,所述研磨用组合物含有固定化有磺酸的胶体二氧化硅,研磨用组合物的pH为6以下,且在pH为6以下的条件下,所述固定化有磺酸的胶体二氧化硅的ζ电位为负,氮化硅的ζ电位为正。
2.根据权利要求1所述的研磨用组合物的用途,其中,氮化硅的研磨速度相对于多晶硅的研磨速度的比为2以上。
3.根据权利要求1或2所述的研磨用组合物的用途,其中,所述固定化有磺酸的胶体二氧化硅是通过使具有巯基的硅烷偶联剂与胶体二氧化硅偶联后将巯基进行氧化而得到的。
4.根据权利要求1或2所述的研磨用组合物的用途,其中,所述研磨用组合物的pH为4以下。
5.根据权利要求1或2所述的研磨用组合物的用途,其中,所述胶体二氧化硅的形状为非球状。
6.根据权利要求1或2所述的研磨用组合物的用途,其中,所述胶体二氧化硅的平均缔合度为1.2以上且4.0以下。
7.根据权利要求1或2所述的研磨用组合物的用途,其中,其进一步含有二羧酸或三羧酸作为pH调整剂。
8.根据权利要求1或2所述的研磨用组合物的用途,其在研磨包含氮化硅和多晶硅的研磨对象物的用途中使用。
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KR101908265B1 (ko) | 2018-10-15 |
EP3059050B1 (en) | 2018-10-10 |
US20130146804A1 (en) | 2013-06-13 |
CN103180101A (zh) | 2013-06-26 |
US20180244957A1 (en) | 2018-08-30 |
EP2610031A4 (en) | 2014-01-22 |
KR20150043543A (ko) | 2015-04-22 |
KR101571224B1 (ko) | 2015-11-23 |
EP2610031A1 (en) | 2013-07-03 |
KR101843237B1 (ko) | 2018-03-28 |
WO2012026329A1 (ja) | 2012-03-01 |
TW201217504A (en) | 2012-05-01 |
US10508222B2 (en) | 2019-12-17 |
JP2012040671A (ja) | 2012-03-01 |
TW201713745A (zh) | 2017-04-16 |
TWI573865B (zh) | 2017-03-11 |
EP3059050A1 (en) | 2016-08-24 |
EP2610031B1 (en) | 2016-03-23 |
TW201529821A (zh) | 2015-08-01 |
EP3398716A1 (en) | 2018-11-07 |
KR20180032681A (ko) | 2018-03-30 |
JP5695367B2 (ja) | 2015-04-01 |
TWI485236B (zh) | 2015-05-21 |
TWI620813B (zh) | 2018-04-11 |
KR20130101022A (ko) | 2013-09-12 |
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