KR101899948B1 - 연마 조성물 및 실리콘 산화물막 상의 실리콘 질화물의 선택적 연마 방법 - Google Patents

연마 조성물 및 실리콘 산화물막 상의 실리콘 질화물의 선택적 연마 방법 Download PDF

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KR101899948B1
KR101899948B1 KR1020150044959A KR20150044959A KR101899948B1 KR 101899948 B1 KR101899948 B1 KR 101899948B1 KR 1020150044959 A KR1020150044959 A KR 1020150044959A KR 20150044959 A KR20150044959 A KR 20150044959A KR 101899948 B1 KR101899948 B1 KR 101899948B1
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anionic
polishing
composition
acid
abrasive
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KR20150115645A (ko
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미쉬라 아브후다야
왕 룰링
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후지필름 플레이너 솔루션스, 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H01L21/30625—
    • H01L21/31053—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
KR1020150044959A 2014-04-04 2015-03-31 연마 조성물 및 실리콘 산화물막 상의 실리콘 질화물의 선택적 연마 방법 Active KR101899948B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/245,286 US9583359B2 (en) 2014-04-04 2014-04-04 Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
US14/245,286 2014-04-04

Publications (2)

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KR20150115645A KR20150115645A (ko) 2015-10-14
KR101899948B1 true KR101899948B1 (ko) 2018-09-19

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Country Status (5)

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US (2) US9583359B2 (enExample)
EP (1) EP2927294B1 (enExample)
JP (1) JP6437870B2 (enExample)
KR (1) KR101899948B1 (enExample)
TW (1) TWI611009B (enExample)

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KR20230112263A (ko) * 2022-01-20 2023-07-27 에스케이엔펄스 주식회사 반도체 공정용 조성물, 이의 제조 방법 및 이를 이용한 반도체 소자 제조방법
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
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US20160079080A1 (en) 2016-03-17
TWI611009B (zh) 2018-01-11
EP2927294A1 (en) 2015-10-07
US9558959B2 (en) 2017-01-31
US20150284593A1 (en) 2015-10-08
US9583359B2 (en) 2017-02-28
JP2015201644A (ja) 2015-11-12
JP6437870B2 (ja) 2018-12-12
EP2927294B1 (en) 2017-08-02
TW201542785A (zh) 2015-11-16
KR20150115645A (ko) 2015-10-14

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