JP6437870B2 - シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 - Google Patents

シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 Download PDF

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JP6437870B2
JP6437870B2 JP2015076924A JP2015076924A JP6437870B2 JP 6437870 B2 JP6437870 B2 JP 6437870B2 JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015076924 A JP2015076924 A JP 2015076924A JP 6437870 B2 JP6437870 B2 JP 6437870B2
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polishing composition
acid
anionic
polishing
composition according
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JP2015201644A (ja
JP2015201644A5 (enExample
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ミシュラ アブダヤ
ミシュラ アブダヤ
ワン ルリング
ワン ルリング
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フジフイルム プラナー ソリューションズ エルエルシー
フジフイルム プラナー ソリューションズ エルエルシー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Materials Engineering (AREA)
JP2015076924A 2014-04-04 2015-04-03 シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 Active JP6437870B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/245,286 2014-04-04
US14/245,286 US9583359B2 (en) 2014-04-04 2014-04-04 Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films

Publications (3)

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JP2015201644A JP2015201644A (ja) 2015-11-12
JP2015201644A5 JP2015201644A5 (enExample) 2016-12-08
JP6437870B2 true JP6437870B2 (ja) 2018-12-12

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US (2) US9583359B2 (enExample)
EP (1) EP2927294B1 (enExample)
JP (1) JP6437870B2 (enExample)
KR (1) KR101899948B1 (enExample)
TW (1) TWI611009B (enExample)

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Also Published As

Publication number Publication date
EP2927294B1 (en) 2017-08-02
US20150284593A1 (en) 2015-10-08
KR20150115645A (ko) 2015-10-14
US20160079080A1 (en) 2016-03-17
TW201542785A (zh) 2015-11-16
JP2015201644A (ja) 2015-11-12
KR101899948B1 (ko) 2018-09-19
EP2927294A1 (en) 2015-10-07
TWI611009B (zh) 2018-01-11
US9558959B2 (en) 2017-01-31
US9583359B2 (en) 2017-02-28

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