JP6437870B2 - シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 - Google Patents

シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 Download PDF

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JP6437870B2
JP6437870B2 JP2015076924A JP2015076924A JP6437870B2 JP 6437870 B2 JP6437870 B2 JP 6437870B2 JP 2015076924 A JP2015076924 A JP 2015076924A JP 2015076924 A JP2015076924 A JP 2015076924A JP 6437870 B2 JP6437870 B2 JP 6437870B2
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polishing composition
acid
anionic
polishing
composition according
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JP2015201644A5 (enExample
JP2015201644A (ja
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ミシュラ アブダヤ
ミシュラ アブダヤ
ワン ルリング
ワン ルリング
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フジフイルム プラナー ソリューションズ エルエルシー
フジフイルム プラナー ソリューションズ エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2015076924A 2014-04-04 2015-04-03 シリコン酸化膜上のシリコン窒化膜を選択的に研磨するための研磨組成物及び方法 Active JP6437870B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/245,286 US9583359B2 (en) 2014-04-04 2014-04-04 Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
US14/245,286 2014-04-04

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JP2015201644A JP2015201644A (ja) 2015-11-12
JP2015201644A5 JP2015201644A5 (enExample) 2016-12-08
JP6437870B2 true JP6437870B2 (ja) 2018-12-12

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US (2) US9583359B2 (enExample)
EP (1) EP2927294B1 (enExample)
JP (1) JP6437870B2 (enExample)
KR (1) KR101899948B1 (enExample)
TW (1) TWI611009B (enExample)

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Publication number Publication date
JP2015201644A (ja) 2015-11-12
KR20150115645A (ko) 2015-10-14
US20150284593A1 (en) 2015-10-08
US9583359B2 (en) 2017-02-28
EP2927294A1 (en) 2015-10-07
EP2927294B1 (en) 2017-08-02
US20160079080A1 (en) 2016-03-17
US9558959B2 (en) 2017-01-31
KR101899948B1 (ko) 2018-09-19
TWI611009B (zh) 2018-01-11
TW201542785A (zh) 2015-11-16

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